公开(公告)号：US06729614B2

公开(公告)日：2004-05-04

申请号：US10225380

申请日：2002-08-21

申请人： Shigeru Okazaki ,  Daisuke Ueda ,  Kenji Kato

发明人： Shigeru Okazaki ,  Daisuke Ueda ,  Kenji Kato

IPC分类号： B65H314

CPC分类号： B65H3/48 ,  B65H1/18 ,  B65H3/06 ,  B65H3/54

摘要： A sheet feeding apparatus includes a sheet feeding roller that comes in contact with stacked sheets and feeds sheets one by one from the top, wherein an air outlet is provided so that air can be blown onto the upper part of the stacked sheets from the lateral side in the sheet feeding direction, and a floatation suppression member for suppressing floatation of the sheets is provided between the air outlet and the sheet feeding roller and spaced apart from the uppermost surface of the stacked sheets.

摘要翻译： 片材进给装置包括与堆叠的片材接触并从顶部一个接一张地供给片材的片材进给辊，其中设置空气出口，使得空气可以从侧面吹送到堆叠片材的上部 在片材供给方向上设置有用于抑制片材漂浮的浮起抑制部件，该排出抑制部件设置在排出口与供纸辊之间，并且与堆叠片材的最上表面间隔开。

公开(公告)号：US06376898B1

公开(公告)日：2002-04-23

申请号：US09631104

申请日：2000-08-01

申请人： Tomoya Uda ,  Daisuke Ueda ,  Tsuyoshi Tanaka ,  Manabu Yanagihara

发明人： Tomoya Uda ,  Daisuke Ueda ,  Tsuyoshi Tanaka ,  Manabu Yanagihara

IPC分类号： H01L2973

CPC分类号： H01L29/0692 ,  H01L27/0207 ,  H01L27/082 ,  H01L29/737

摘要： An inventive semiconductor integrated circuit device includes multiple transistor banks over a substrate. The banks are arranged to be substantially parallel to each other in a planar layout of the device. Each said bank includes a plurality of unit transistors, each including a base, an emitter and a collector. In the planar layout of the device, a position of a first one of the transistors is shifted from a position of a second one of the transistors in a direction in which the banks extend. The first and second transistors belong to first and second ones of the banks, respectively, which are adjacent to each other. The second transistor is closer to the first transistor than any other transistor in the second bank.

摘要翻译： 本发明的半导体集成电路器件包括在衬底上的多个晶体管组。 这些堤被布置成在设备的平面布局中彼此基本平行。 每个所述存储体包括多个单元晶体管，每个单元晶体管包括基极，发射极和集电极。 在器件的平面布局中，晶体管中的第一个晶体管的位置沿着两个晶体管延伸的方向从第二晶体管的位置移位。 第一和第二晶体管分别属于彼此相邻的第一和第二晶体管。 第二晶体管比第二组中的任何其它晶体管更靠近第一晶体管。

公开(公告)号：US06365513B1

公开(公告)日：2002-04-02

申请号：US09162232

申请日：1998-09-29

申请人： Hidetoshi Furukawa ,  Atsushi Noma ,  Tsuyoshi Tanaka ,  Hidetoshi Ishida ,  Daisuke Ueda

发明人： Hidetoshi Furukawa ,  Atsushi Noma ,  Tsuyoshi Tanaka ,  Hidetoshi Ishida ,  Daisuke Ueda

IPC分类号： H01L2166

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A via hole having a bottom is formed in a substrate and then a conductor layer is formed at least over a sidewall of the via hole. Thereafter, the substrate is thinned by removing a portion of the substrate opposite to another portion of the substrate in which the via hole is formed such that the conductor layer is exposed.

摘要翻译： 在衬底中形成具有底部的通孔，然后在通孔的至少一个侧壁上形成导体层。 此后，通过去除衬底的与形成通孔的衬底的另一部分相对的部分使得导体层暴露而使衬底变薄。

公开(公告)号：US08872227B2

公开(公告)日：2014-10-28

申请号：US13402631

申请日：2012-02-22

申请人： Hidekazu Umeda ,  Yoshiharu Anda ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Hidekazu Umeda ,  Yoshiharu Anda ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/417 ,  H01L29/20

CPC分类号： H01L29/2003 ,  H01L29/1066 ,  H01L29/4175 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/861

摘要： A nitride semiconductor device includes a semiconductor substrate, and a nitride semiconductor layer formed on the semiconductor substrate. The semiconductor substrate includes a normal region and an interface current block region surrounding the normal region. The nitride semiconductor layer includes an element region and an isolation region surrounding the element region. The element region is formed over the normal region. The interface current block region contains impurities, and forms a potential barrier against carriers generated at an interface between the nitride semiconductor layer and the semiconductor substrate.

摘要翻译： 氮化物半导体器件包括半导体衬底和形成在半导体衬底上的氮化物半导体层。 半导体衬底包括正常区域和围绕法线区域的界面电流阻挡区域。 氮化物半导体层包括元件区域和围绕元件区域的隔离区域。 元件区域形成在正常区域上。 界面电流阻挡区域含有杂质，并且在氮化物半导体层和半导体衬底之间的界面处产生的载流子形成势垒。

公开(公告)号：US08742467B2

公开(公告)日：2014-06-03

申请号：US13613724

申请日：2012-09-13

申请人： Tatsuo Morita ,  Daisuke Ueda ,  Yasuhiro Uemoto ,  Tetsuzo Ueda

发明人： Tatsuo Morita ,  Daisuke Ueda ,  Yasuhiro Uemoto ,  Tetsuzo Ueda

IPC分类号： H01L29/772 ,  H01L29/778

CPC分类号： H01L29/7787 ,  H01L27/0605 ,  H01L29/1066 ,  H01L29/2003

摘要： A bidirectional switching device includes a semiconductor multilayer structure made of a nitride semiconductor, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor multilayer structure, and a first gate electrode and a second gate electrode. The first gate electrode is covered with a first shield electrode having a potential substantially equal to that of the first ohmic electrode. The second gate electrode is covered with the second shield electrode having a potential substantially equal to that of the second ohmic electrode. An end of the first shield electrode is positioned between the first gate electrode and the second gate electrode, and an end of the second shield electrode is positioned between the second gate electrode and the first gate electrode.

摘要翻译： 双向开关器件包括由半导体多层结构上形成的由氮化物半导体，第一欧姆电极和第二欧姆电极构成的半导体多层结构以及第一栅电极和第二栅电极。 第一栅电极被第一屏蔽电极覆盖，该第一屏蔽电极的电位基本上等于第一欧姆电极的电位。 第二栅电极被第二屏蔽电极覆盖，其电位基本上等于第二欧姆电极的电位。 第一屏蔽电极的端部位于第一栅极电极和第二栅极电极之间，第二屏蔽电极的端部位于第二栅极电极和第一栅极电极之间。

公开(公告)号：US08439348B2

公开(公告)日：2013-05-14

申请号：US13248442

申请日：2011-09-29

申请人： Tomoo Suzuki ,  Akira Kosugi ,  Daisuke Ueda

发明人： Tomoo Suzuki ,  Akira Kosugi ,  Daisuke Ueda

IPC分类号： B65H3/12

CPC分类号： B65H3/128 ,  B65H9/002 ,  B65H9/006 ,  B65H2301/331 ,  B65H2404/2693 ,  B65H2406/12 ,  B65H2511/216 ,  B65H2511/242 ,  B65H2801/06 ,  B65H2220/02 ,  B65H2220/11 ,  B65H2220/01

摘要： A sheet feeding apparatus which includes: a sheet loading tray for stacking sheets; a suction and conveyance section placed above stacked sheets on the sheet loading tray and sucks and conveys a sheet in the sheet conveying direction; an air blowing section which blows air at the stacked sheets on the sheet loading tray and causes the sheet to float up; a skew correction section which is provided with a pair of conveyance rollers, and corrects a skew of the sheet being conveyed by the suction and conveyance section; and a control section which controls a force of sucking the sheet, wherein the control section changes the force of sucking the sheet from a first level to a second level that is lower than the first level, before a leading edge of the sheet butts against a pair of conveyance rollers of the skew correction section.

摘要翻译： 一种送纸装置，包括：用于堆叠纸张的纸张装载托盘; 吸入和传送部分，放置在片材装载盘上的堆叠片材之上，并在片材传送方向上吸收和传送片材; 空气吹送部，其将堆叠的片材上的空气吹送在片材装载盘上，并使片材浮起; 偏斜校正部，设置有一对传送辊，并且校正由吸引传送部输送的片材的歪斜; 以及控制部，其控制吸引纸张的力，其中，所述控制部在所述纸张的前端抵靠在所述纸张的前端之前将从所述第一水平将所述纸张吸入的力改变为低于所述第一水平的第二水平 歪斜校正部分的输送辊对。

公开(公告)号：US08344423B2

公开(公告)日：2013-01-01

申请号：US13360275

申请日：2012-01-27

申请人： Yasuhiro Uemoto ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Yasuhiro Uemoto ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/66

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7783

摘要： A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.

摘要翻译： 氮化物半导体器件包括：第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在所述第二氮化物半导体层上的第三氮化物半导体层。 位于栅电极下方的第三氮化物半导体层的区域形成有具有p型导电性的控制区域，以及位于栅电极与源电极和漏极之间的第三氮化物半导体层的区域 形成有具有比控制区域更高的电阻的高电阻区域。

公开(公告)号：US20120138448A1

公开(公告)日：2012-06-07

申请号：US13372098

申请日：2012-02-13

申请人： Norihisa MINO ,  Daisuke Ueda

发明人： Norihisa MINO ,  Daisuke Ueda

IPC分类号： C02F1/04 ,  C02F1/14 ,  C02F103/08

CPC分类号： C02F1/043 ,  C02F1/14 ,  C02F2103/08 ,  Y02A20/128 ,  Y02A20/129 ,  Y02A20/142

摘要： An object of the present invention is to provide a method for desalinating saltwater with a desalination device.The desalination device comprises inside a vessel, a breathable sheet, a water-repellent particle layer and a tank layer. The tank layer is positioned at the lower portion inside the vessel and the breathable sheet is interposed between the water-repellent particle layer and the tank layer. The breathable sheet comprises a through-hole, the water-repellent particle layer is composed of a plurality of water-repellent particles, and the surface of the respective water-repellent particles comprises a water-repellent film.The saltwater is desalted by a step of pouring saltwater into the vessel to dispose the saltwater on the surface of the water-repellent particle layer, a step of heating the saltwater to evaporate the saltwater into vapor; and a step of liquefying the vapor to obtain fresh water in the tank layer.

摘要翻译： 本发明的目的是提供一种用海水淡化装置对盐水进行海水淡化的方法。 脱盐装置包括容器内的透气片，防水颗粒层和罐层。 罐层位于容器内部的下部，透气片介于防水颗粒层和罐层之间。 透气片包括通孔，防水性颗粒层由多个防水颗粒构成，各防水颗粒的表面包括防水膜。 盐水通过将盐水倒入容器中以将盐水处理在防水颗粒层的表面上的步骤脱盐，加热盐水以将盐水蒸发成蒸气的步骤; 以及液化液体以在罐层中获得淡水的步骤。

公开(公告)号：US08165005B2

公开(公告)日：2012-04-24

申请号：US12410769

申请日：2009-03-25

申请人： Daisuke Ueda ,  Takashi Iwamura

发明人： Daisuke Ueda ,  Takashi Iwamura

IPC分类号： G11B7/00

CPC分类号： G11B7/00451 ,  G11B7/127 ,  G11B2007/0009

摘要： Disclosed is an optical recording method. The optical recording method includes irradiating an area where a recording mark is formed in a medium with a pulse train of laser light, and irradiating the area where the recording mark is formed with continuous-wave laser light that is continuously output.

摘要翻译： 公开了一种光学记录方法。 光记录方法包括：在具有激光脉冲串的介质中照射形成记录标记的区域，并且用连续输出的连续波激光照射形成记录标记的区域。

公开(公告)号：US20110254147A1

公开(公告)日：2011-10-20

申请号：US13173647

申请日：2011-06-30

申请人： Nobuyuki OTSUKA ,  Manabu Yanagihara ,  Shuichi Nagai ,  Daisuke Ueda

发明人： Nobuyuki OTSUKA ,  Manabu Yanagihara ,  Shuichi Nagai ,  Daisuke Ueda

IPC分类号： H01L23/44 ,  H01L21/54

CPC分类号： H01L23/427 ,  H01L21/50 ,  H01L21/54 ,  H01L23/045 ,  H01L23/10 ,  H01L2224/45124 ,  H01L2224/48 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： To provide a semiconductor equipment having high heat-transfer effect and breakdown voltage, and a method of manufacturing the same. The semiconductor equipment includes: a sealed container; a stem connected to the sealed container via a stem peripheral portion; and a semiconductor chip mounted on a top surface of the stem, inside the sealed container. The semiconductor chip is electrically connected to a lead provided to the stem, the stem peripheral portion, which is of a material that is different from the material of stem and the same as the material of the sealed container, is bonded along a periphery of the stem, and the sealed container is filled with a working fluid including at least one of ethanol, a perfluorocarbon, and a fluoroether.

摘要翻译： 提供具有高传热效应和击穿电压的半导体设备及其制造方法。 半导体设备包括：密封容器; 通过杆周边部连接到密封容器的杆; 以及安装在所述杆的顶表面上的所述密封容器内的半导体芯片。 半导体芯片电连接到设置在杆上的引线，与外壳材料不同的材料的茎周边部分沿密封容器的材料粘结， 并且密封容器中填充有包括乙醇，全氟化碳和氟醚中的至少一种的工作流体。