公开(公告)号：US20190035692A1

公开(公告)日：2019-01-31

申请号：US15658524

申请日：2017-07-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Lars W. Liebmann ,  Bipul C. Paul ,  Daniel Chanemougame ,  Nigel G. Cave

IPC: H01L21/8234 ,  H01L27/088

Abstract: A method includes forming a first gate structure above a first region of a semiconducting substrate. A first sidewall spacer is formed adjacent the first gate structure. The first gate structure and the first sidewall spacer are recessed to define a first gate contact cavity. A second sidewall spacer is formed in the first gate contact cavity. A first conductive gate contact is formed in the first gate contact cavity. The second sidewall spacer is removed to define a first spacer cavity. A conductive material is formed in the first spacer cavity to form a first conductive spacer contacting the first conductive gate contact.

公开(公告)号：US20190027580A1

公开(公告)日：2019-01-24

申请号：US15655547

申请日：2017-07-20

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES Inc. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Su Chen Fan ,  Andrew M. Greene ,  Sean Lian ,  Balasubramanian Pranatharthiharan ,  Mark V. Raymond ,  Ruilong Xie

IPC: H01L29/66 ,  H01L21/033 ,  H01L21/768 ,  H01L21/285

Abstract: Techniques for forming self-aligned contacts by forming gate sidewall spacers and gates before forming the contacts are provided. In one aspect, a method of forming self-aligned contacts includes the steps of: forming multiple gate sidewall spacers on a substrate; burying the gate sidewall spacers in a dielectric; forming gate trenches by selectively removing the dielectric from regions between the gate sidewall spacers in which gates will be formed; forming the gates in the gate trenches; forming contact trenches by selectively removing the dielectric from regions between the gate sidewall spacers in which the self-aligned contacts will be formed; and forming the self-aligned contacts in the contact trenches. A device structure having self-aligned contacts is also provided.

公开(公告)号：US20190013268A1

公开(公告)日：2019-01-10

申请号：US16127645

申请日：2018-09-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GlobalFoundries, Inc.

Inventor： Andrew M. Greene ,  Injo Ok ,  Balasubramanian Pranatharthiharan ,  Charan V.V.S. Surisetty ,  Ruilong Xie

IPC: H01L23/528 ,  H01L21/768 ,  H01L29/49 ,  H01L21/283 ,  H01L21/3205 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/306 ,  H01L27/088 ,  H01L29/417 ,  H01L21/8234 ,  H01L29/78

Abstract: A self-aligned interconnect structure includes a fin structure patterned in a substrate; an epitaxial contact disposed over the fin structure; a first metal gate and a second metal gate disposed over and substantially perpendicular to the epitaxial contact, the first metal gate and the second metal gate being substantially parallel to one another; and a metal contact on and in contact with the substrate in a region between the first and second metal gates.

公开(公告)号：US10177237B2

公开(公告)日：2019-01-08

申请号：US15782380

申请日：2017-10-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES INC.

Inventor： Kangguo Cheng ,  Ruilong Xie ,  Tenko Yamashita

IPC: H01L21/8234 ,  H01L29/49 ,  H01L29/66 ,  H01L21/311 ,  H01L21/31 ,  H01L21/283 ,  H01L21/768 ,  H01L23/522 ,  H01L21/764 ,  H01L21/28 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/40 ,  H01L21/8238 ,  H01L29/51

Abstract: A semiconductor device that includes a gate structure on a channel region of a semiconductor device. Source and drain regions may be present on opposing sides of the channel region. The semiconductor device may further include a composite gate sidewall spacer present on a sidewall of the gate structure. The composite gate sidewall spacer may include a first composition portion having an air gap encapsulated therein, and a second composition portion that is entirely solid and present atop the first composition portion.

公开(公告)号：US20190006232A1

公开(公告)日：2019-01-03

申请号：US16103372

申请日：2018-08-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Lars Liebmann ,  Daniel Chanemougame ,  Geng Han

IPC: H01L21/768 ,  H01L29/40 ,  H01L23/528 ,  H01L23/522 ,  H01L21/02

Abstract: An integrated circuit product includes a first layer of insulating material including a first insulating material. The first layer of insulating material is positioned above a device layer of a semiconductor substrate. The device layer includes transistors. A metallization blocking structure is positioned in an opening in the first layer of insulating material. The metallization blocking structure includes a second insulating material that is different from the first insulating material. A metallization trench is defined in the first layer of insulating material on opposite sides of the metallization blocking structure. A conductive metallization line includes first and second portions positioned in the metallization trench on opposite sides of the metallization blocking structure. The conductive metallization line has a long axis extending along the first and second portions.

公开(公告)号：US10170616B2

公开(公告)日：2019-01-01

申请号：US15268796

申请日：2016-09-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Steven J. Bentley ,  Jody A. Fronheiser

IPC: H01L21/337 ,  H01L29/78 ,  H01L21/306 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423 ,  H01L29/40

Abstract: One illustrative method disclosed herein includes, among other things, defining a cavity in a plurality of layers of material positioned above a bottom source/drain (S/D) layer of semiconductor material, wherein a portion of the bottom source/drain (S/D) layer of semiconductor material is exposed at the bottom of the cavity, and performing at least one epi deposition process to form a vertically oriented channel semiconductor structure on the bottom source/drain (S/D) layer of semiconductor material and in the cavity and a top source/drain (S/D) layer of semiconductor material above the vertically oriented channel semiconductor structure. In this example, the method further includes removing at least one of the plurality of layers of material to thereby expose an outer perimeter surface of the vertically oriented channel semiconductor structure and forming a gate structure around the vertically oriented channel semiconductor structure.

公开(公告)号：US10170591B2

公开(公告)日：2019-01-01

申请号：US15178871

申请日：2016-06-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GlobalFoundries, Inc.

Inventor： Cheng Chi ,  Fee Li Lie ,  Chi-Chun Liu ,  Ruilong Xie

IPC: H01L27/088 ,  H01L29/66 ,  H01L21/3105 ,  H01L21/033 ,  H01L29/06 ,  H01L29/78 ,  H01L21/8234

Abstract: A method for fabricating a semiconductor device comprises forming a first hardmask, a planarizing layer, and a second hardmask on a substrate. Removing portions of the second hardmask and forming alternating blocks of a first material and a second material over the second hardmask. The blocks of the second material are removed to expose portions of the planarizing layer. Exposed portions of the planarizing layer and the first hardmask are removed to expose portions of the first hardmask. Portions of the first hardmask and portions of the substrate are removed to form a first fin and a second fin. Portions of the substrate are removed to further increase the height of the first fin and substantially remove the second fin. A gate stack is formed over a channel region of the first fin.

公开(公告)号：US10170585B2

公开(公告)日：2019-01-01

申请号：US15437840

申请日：2017-02-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES Inc.

Inventor： Cheng Chi ,  Ruilong Xie

IPC: H01L21/285 ,  H01L29/66 ,  H01L27/092 ,  H01L29/06 ,  H01L21/8238 ,  H01L21/3105

Abstract: A method is presented for forming equal thickness gate spacers for a CMOS (complementary metal oxide semiconductor) device, the method includes forming a PFET (p-type field effect transistor) device and an NFET (n-type field effect transistor) device each including gate masks formed over dummy gates, forming PFET epi growth regions between the dummy gates of the PFET device, forming NFET epi growth regions between the dummy gates of the NFET device, depositing a nitride liner and an oxide over the PFET and NFET epi growth regions, the nitride liner and oxide extending up to the gate masks, and removing the dummy gates and the gate masks to form HKMGs (high-k metal gates) between the PFET and NFET epi growth regions.

公开(公告)号：US10157827B2

公开(公告)日：2018-12-18

申请号：US15196371

申请日：2016-06-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GlobalFoundries, Inc.

Inventor： Cheng Chi ,  Ruilong Xie

IPC: H01L23/522 ,  H01L29/417 ,  H01L23/528 ,  H01L23/485 ,  H01L21/8238 ,  H01L21/311 ,  H01L27/12 ,  H01L29/66

Abstract: A method for forming a semiconductor device comprises forming a gate stack on a channel region of a semiconductor, forming a source/drain region adjacent to the channel region, depositing a first insulator layer over the source/drain region, and removing a portion of the first insulator layer to form a first cavity that exposes a portion of the source/drain region. A first conductive material is deposited in the first cavity, and a conductive extension is formed from the first conductive material over the first insulator layer. A protective layer is deposited over the extension and a second insulator layer is deposited over the protective layer. A portion of the second insulator layer is removed to form a second cavity that exposes the protective layer, and an exposed portion of the protective layer is removed to expose a portion of the extension. A second conductive material is deposited in the second cavity.

公开(公告)号：US20180342427A1

公开(公告)日：2018-11-29

申请号：US15602225

申请日：2017-05-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ruilong Xie ,  Chanro Park ,  Min Gyu Sung ,  Hoon Kim ,  Hui Zang ,  Guowei Xu

IPC: H01L21/8238 ,  H01L21/3213 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/823878 ,  B82Y10/00 ,  H01L21/02603 ,  H01L21/823828 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/401 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/785 ,  H01L29/78696

Abstract: This disclosure relates to a method of replacement metal gate patterning for nanosheet devices including: forming a first and a second nanosheet stack on a substrate, the first and the second nanosheet stacks being adjacent to each other and each including vertically adjacent nanosheets separated by a distance; depositing a first metal surrounding the first nanosheet stack and a second portion of the first metal surrounding the second nanosheet stack; forming an isolation region between the first nanosheet stack and the second nanosheet stack; removing the second portion of the first metal surrounding the second nanosheet stack with an etching process, the isolation region preventing the etching process from reaching the first portion of the first metal and thereby preventing removal of the first portion of the first metal; and depositing a second metal surrounding each of the nanosheets of the second nanosheet stack.