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61.发明申请公开(公告)号：US20110156048A1
公开(公告)日：2011-06-30
申请号：US12679347
申请日：2009-06-04
申请人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
发明人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
IPC分类号： H01L29/207 , H01L21/20 , H01L21/283
CPC分类号： H01L33/32 , H01L29/2003 , H01L33/0095 , H01L33/16 , H01L33/30 , H01L33/40 , H01L33/44 , H01L2224/14 , H01L2224/16225 , H01L2924/181 , H01L2924/00012
摘要： A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32, which contacts with the surface of a p-type semiconductor region in the semiconductor multilayer structure 20.
摘要翻译： 氮化物系半导体发光器件100包括其主表面是m面12的GaN衬底10，已经形成在GaN基衬底10的m面12上的半导体多层结构20 以及布置在半导体多层结构体20上的电极30.电极30包括与半导体多层结构体20中的p型半导体区域的表面接触的Mg层32。
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公开(公告)号：US20110101372A1
公开(公告)日：2011-05-05
申请号：US12993305
申请日：2010-03-16
CPC分类号： H01L33/40 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/16 , H01L33/32 , H01L2933/0016
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and a metal layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译： 氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体层叠结构体20上的电极30.电极30包括Zn层32和设置在Zn层32上的金属层34.Zn层32与p型半导体区域的表面接触 半导体多层结构20。
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公开(公告)号：US20080116479A1
公开(公告)日：2008-05-22
申请号：US11972844
申请日：2008-01-11
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/2201 , H01S5/2206 , H01S5/2216 , H01S5/2231 , H01S5/305 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semiconductor over the entire surface of the first Group III-V compound semiconductor except a portion covered with the masking layer, thereby forming a current confining layer that has a striped opening defined by the masking layer, (C) selectively removing the masking layer, and (D) growing a third Group III-V compound semiconductor to cover the surface of the first Group III-V compound semiconductor, which is exposed through the striped opening, and the surface of the current confining layer.
摘要翻译： 根据本发明的制造半导体发光元件的方法包括以下步骤：（A）在第一III-V族化合物半导体上提供条纹掩模层，（B）选择性地生长第二III-V族化合物半导体 在除了被掩模层覆盖的部分之外的第一III-V族化合物半导体的整个表面上，由此形成具有由掩模层限定的条纹开口的电流限制层，（C）选择性地去除掩模层，和 D）生长第三组III-V族化合物半导体以覆盖通过条纹开口暴露的第一III-V族化合物半导体的表面和电流限制层的表面。
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公开(公告)号：US09252330B2
公开(公告)日：2016-02-02
申请号：US13813792
申请日：2011-08-05
申请人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
发明人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.
摘要翻译： 根据本发明的半导体发光元件包括：n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型氮化物半导体层和p型氮化物半导体层之间的有源层区域22; 与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50，其被设置用于发光面，并且具有大致平行于m面氮化物半导体层的a轴方向延伸的多个突起。
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65.发明授权公开(公告)号：US08748899B2
公开(公告)日：2014-06-10
申请号：US13447368
申请日：2012-04-16
申请人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
发明人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
IPC分类号： H01L29/778 , H01L33/32 , H01L29/78
CPC分类号： H01L33/32 , H01L33/16 , H01L33/40 , H01L2224/14 , H01L2224/16225 , H01L2924/181 , Y10T436/112499 , H01L2924/00012
摘要： A nitride-based semiconductor device according to the present disclosure includes a nitride-based semiconductor multilayer structure 20 with a p-type semiconductor region, of which the surface 12 defines a tilt angle of one to five degrees with respect to an m plane, and an electrode 30, which is arranged on the p-type semiconductor region. The p-type semiconductor region is made of an AlxInyGazN (where x+y+z=1, x≧0, y≧0 and z≧0) semiconductor layer 26. The electrode 30 includes an Mg layer 32, which is in contact with the surface 12 of the p-type semiconductor region, and a metal layer 34 formed on the Mg layer 32. The metal layer 34 is formed from at least one metallic element that is selected from the group consisting of Pt, Mo and Pd.
摘要翻译： 根据本公开的氮化物基半导体器件包括具有p型半导体区域的氮化物基半导体多层结构20，其表面12相对于m平面限定1至5度的倾斜角，以及 布置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z≥0）半导体层26制成。电极30包括Mg层32，其接触 与p型半导体区域的表面12以及形成在Mg层32上的金属层34.金属层34由选自Pt，Mo和Pd中的至少一种金属元素形成。
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公开(公告)号：US20130126901A1
公开(公告)日：2013-05-23
申请号：US13813777
申请日：2011-08-05
申请人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
发明人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m-plane nitride semiconductor layer and which is interposed between the n- and p-type nitride semiconductor layers; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run in a direction that defines either an angle of 5 degrees to 80 degrees or an angle of −80 degrees to −5 degrees with respect to the a-axis direction of the m-plane nitride semiconductor layer.
摘要翻译： 根据本发明的半导体发光元件包括：n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型和p型氮化物半导体层之间的有源层区22。 与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50，其被设置用于发光面，并且具有多个突起，该多个突起在限定5度至80度的角度或-80度至-5度的角度的方向上延伸，相对于 相对于m面氮化物半导体层的a轴方向。
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67.发明授权Method for fabricating nitride-based semiconductor device having electrode on m-plane 有权一种在m面上具有电极的氮化物基半导体器件的制造方法公开(公告)号：US08318594B2
公开(公告)日：2012-11-27
申请号：US12937756
申请日：2010-03-17
IPC分类号： H01L21/3205
CPC分类号： H01L33/40 , H01L33/32 , H01S5/0425 , H01S5/3202 , H01S5/32341
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译： 氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体层叠结构体20上的电极30.电极30包括设置在Mg层32上的Mg层32和Ag层34.Mg层32与p型半导体区域的表面接触 半导体多层结构20。
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公开(公告)号：US08299490B2
公开(公告)日：2012-10-30
申请号：US13167026
申请日：2011-06-23
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01S5/0425 , H01S5/3202 , H01S5/32341
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译： 氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体层叠结构体20上的电极30.电极30包括设置在Mg层32上的Mg层32和Ag层34.Mg层32与p型半导体区域的表面接触 半导体多层结构20。
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公开(公告)号：US07622749B2
公开(公告)日：2009-11-24
申请号：US11972844
申请日：2008-01-11
IPC分类号： H01L29/207
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/2201 , H01S5/2206 , H01S5/2216 , H01S5/2231 , H01S5/305 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semiconductor over the entire surface of the first Group III-V compound semiconductor except a portion covered with the masking layer, thereby forming a current confining layer that has a striped opening defined by the masking layer, (C) selectively removing the masking layer, and (D) growing a third Group III-V compound semiconductor to cover the surface of the first Group III-V compound semiconductor, which is exposed through the striped opening, and the surface of the current confining layer.
摘要翻译： 根据本发明的制造半导体发光元件的方法包括以下步骤：（A）在第一III-V族化合物半导体上提供条纹掩模层，（B）选择性地生长第二III-V族化合物半导体 在除了被掩模层覆盖的部分之外的第一III-V族化合物半导体的整个表面上，由此形成具有由掩模层限定的条纹开口的电流限制层，（C）选择性地去除掩模层，和 D）生长第三组III-V族化合物半导体以覆盖通过条纹开口暴露的第一III-V族化合物半导体的表面和电流限制层的表面。
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70.发明申请NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 有权基于氮化物的半导体发光器件及其制造方法公开(公告)号：US20100244063A1
公开(公告)日：2010-09-30
申请号：US12739972
申请日：2009-09-07
申请人： Toshiya Yokogawa , Ryou Kato
发明人： Toshiya Yokogawa , Ryou Kato
CPC分类号： H01L33/007 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L33/025 , H01L33/12 , H01L33/16
摘要： A nitride-based semiconductor light-emitting device according to the present invention has a nitride-based semiconductor multilayer structure 50. The nitride-based semiconductor multilayer structure 50 includes: an active layer 32 including an AlaInbGacN crystal layer (where a+b+c=1, a≧0, b≧0 and c≧0); an AldGaeN overflow suppressing layer 36 (where d+e=1, d>0, and e≧0); and an AlfGagN layer 38 (where f+g=1, f≧0, g≧0 and f
摘要翻译： 根据本发明的氮化物基半导体发光器件具有氮化物基半导体多层结构50.氮化物基半导体多层结构50包括：包含AlaInbGacN晶体层（其中a + b + c = 1，a≥0，b≥0，c≥0）。 AldGaeN溢出抑制层36（其中d + e = 1，d> 0和e≥0）; 和AlfGagN层38（其中f + g = 1，f≥0，g≥0和f
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