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公开(公告)号：US08306085B2
公开(公告)日：2012-11-06
申请号：US13234326
申请日：2011-09-16
IPC分类号： H01S5/10
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/78 , H01L33/0095 , H01S5/0202 , H01S5/22 , H01S5/2201 , Y10S148/028
摘要： The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure 40 supported by an upper face of the substrate. First, a wafer 1 to be split into individual substrates is provided. A plurality of semiconductor layers composing the multilayer structure 40 are grown on the wafer 1. By cleaving the wafer 1 and the semiconductor layers, a cleavage plane in the multilayer structure 40 is formed. In the present invention, a plurality of voids are arranged at positions in the multilayer structure at which a cleavage plane is to be formed. Thus, cleavage can be performed with a good yield.
摘要翻译： 本发明涉及一种氮化物化合物半导体元件的制造方法，所述氮化物化合物半导体元件包括由所述基板的上表面支撑的基板和多层结构体40。 首先，设置分割成各个基板的晶片1。 构成多层结构40的多个半导体层在晶片1上生长。通过切割晶片1和半导体层，形成多层结构40中的解理面。 在本发明中，在形成有解理面的多层结构体的位置配置多个空隙。 因此，可以以良好的产率进行裂解。
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公开(公告)号：US20080116479A1
公开(公告)日：2008-05-22
申请号：US11972844
申请日：2008-01-11
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/2201 , H01S5/2206 , H01S5/2216 , H01S5/2231 , H01S5/305 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semiconductor over the entire surface of the first Group III-V compound semiconductor except a portion covered with the masking layer, thereby forming a current confining layer that has a striped opening defined by the masking layer, (C) selectively removing the masking layer, and (D) growing a third Group III-V compound semiconductor to cover the surface of the first Group III-V compound semiconductor, which is exposed through the striped opening, and the surface of the current confining layer.
摘要翻译： 根据本发明的制造半导体发光元件的方法包括以下步骤：（A）在第一III-V族化合物半导体上提供条纹掩模层，（B）选择性地生长第二III-V族化合物半导体 在除了被掩模层覆盖的部分之外的第一III-V族化合物半导体的整个表面上，由此形成具有由掩模层限定的条纹开口的电流限制层，（C）选择性地去除掩模层，和 D）生长第三组III-V族化合物半导体以覆盖通过条纹开口暴露的第一III-V族化合物半导体的表面和电流限制层的表面。
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公开(公告)号：US08039283B2
公开(公告)日：2011-10-18
申请号：US12159232
申请日：2006-12-20
IPC分类号： H01L21/301 , H01S5/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/78 , H01L33/0095 , H01S5/0202 , H01S5/22 , H01S5/2201 , Y10S148/028
摘要： The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure 40 supported by an upper face of the substrate. First, a wafer 1 to be split into individual substrates is provided. A plurality of semiconductor layers composing the multilayer structure 40 are grown on the wafer 1. By cleaving the wafer 1 and the semiconductor layers, a cleavage plane in the multilayer structure 40 is formed. In the present invention, a plurality of voids are arranged at positions in the multilayer structure at which a cleavage plane is to be formed. Thus, cleavage can be performed with a good yield.
摘要翻译： 本发明涉及一种氮化物化合物半导体元件的制造方法，所述氮化物化合物半导体元件包括由所述基板的上表面支撑的基板和多层结构体40。 首先，设置分割成各个基板的晶片1。 构成多层结构40的多个半导体层在晶片1上生长。通过切割晶片1和半导体层，形成多层结构40中的解理面。 在本发明中，在形成有解理面的多层结构体的位置配置多个空隙。 因此，可以以良好的产率进行裂解。
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公开(公告)号：US20100226401A1
公开(公告)日：2010-09-09
申请号：US12159232
申请日：2006-12-20
IPC分类号： H01S5/02 , H01L21/301 , H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/78 , H01L33/0095 , H01S5/0202 , H01S5/22 , H01S5/2201 , Y10S148/028
摘要： The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure 40 supported by an upper face of the substrate. First, a wafer 1 to be split into individual substrates is provided. A plurality of semiconductor layers composing the multilayer structure 40 are grown on the wafer 1. By cleaving the wafer 1 and the semiconductor layers, a cleavage plane in the multilayer structure 40 is formed. In the present invention, a plurality of voids are arranged at positions in the multilayer structure at which a cleavage plane is to be formed. Thus, cleavage can be performed with a good yield.
摘要翻译： 本发明涉及一种氮化物化合物半导体元件的制造方法，所述氮化物化合物半导体元件包括由所述基板的上表面支撑的基板和多层结构体40。 首先，设置分割成各个基板的晶片1。 构成多层结构40的多个半导体层在晶片1上生长。通过切割晶片1和半导体层，形成多层结构40中的解理面。 在本发明中，在形成有解理面的多层结构体的位置配置多个空隙。 因此，可以以良好的产率进行裂解。
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公开(公告)号：US07396697B2
公开(公告)日：2008-07-08
申请号：US10537868
申请日：2004-04-06
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/2201 , H01S5/2206 , H01S5/2216 , H01S5/2231 , H01S5/305 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semiconductor over the entire surface of the first Group III-V compound semiconductor except a portion covered with the masking layer, thereby forming a current confining layer that has a striped opening defined by the masking layer, (C) selectively removing the masking layer, and (D) growing a third Group III-V compound semiconductor to cover the surface of the first Group III-V compound semiconductor, which is exposed through the striped opening, and the surface of the current confining layer.
摘要翻译： 根据本发明的制造半导体发光元件的方法包括以下步骤：（A）在第一III-V族化合物半导体上提供条纹掩模层，（B）选择性地生长第二III-V族化合物半导体 在除了被掩模层覆盖的部分之外的第一III-V族化合物半导体的整个表面上，由此形成具有由掩模层限定的条纹开口的电流限制层，（C）选择性地去除掩模层，和 D）生长第三组III-V族化合物半导体以覆盖通过条纹开口暴露的第一III-V族化合物半导体的表面和电流限制层的表面。
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公开(公告)号：US20060049433A1
公开(公告)日：2006-03-09
申请号：US10537868
申请日：2004-04-06
IPC分类号： H01L31/112
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/2201 , H01S5/2206 , H01S5/2216 , H01S5/2231 , H01S5/305 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semiconductor over the entire surface of the first Group III-V compound semiconductor except a portion covered with the masking layer, thereby forming a current confining layer that has a striped opening defined by the masking layer, (C) selectively removing the masking layer, and (D) growing a third Group III-V compound semiconductor to cover the surface of the first Group III-V compound semiconductor, which is exposed through the striped opening, and the surface of the current confining layer.
摘要翻译： 根据本发明的制造半导体发光元件的方法包括以下步骤：（A）在第一III-V族化合物半导体上提供条纹掩模层，（B）选择性地生长第二III-V族化合物半导体 在除了被掩模层覆盖的部分之外的第一III-V族化合物半导体的整个表面上，由此形成具有由掩模层限定的条纹开口的电流限制层，（C）选择性地去除掩模层，和 D）生长第三组III-V族化合物半导体以覆盖通过条纹开口暴露的第一III-V族化合物半导体的表面和电流限制层的表面。
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公开(公告)号：US07622749B2
公开(公告)日：2009-11-24
申请号：US11972844
申请日：2008-01-11
IPC分类号： H01L29/207
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/2201 , H01S5/2206 , H01S5/2216 , H01S5/2231 , H01S5/305 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semiconductor over the entire surface of the first Group III-V compound semiconductor except a portion covered with the masking layer, thereby forming a current confining layer that has a striped opening defined by the masking layer, (C) selectively removing the masking layer, and (D) growing a third Group III-V compound semiconductor to cover the surface of the first Group III-V compound semiconductor, which is exposed through the striped opening, and the surface of the current confining layer.
摘要翻译： 根据本发明的制造半导体发光元件的方法包括以下步骤：（A）在第一III-V族化合物半导体上提供条纹掩模层，（B）选择性地生长第二III-V族化合物半导体 在除了被掩模层覆盖的部分之外的第一III-V族化合物半导体的整个表面上，由此形成具有由掩模层限定的条纹开口的电流限制层，（C）选择性地去除掩模层，和 D）生长第三组III-V族化合物半导体以覆盖通过条纹开口暴露的第一III-V族化合物半导体的表面和电流限制层的表面。
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8.发明授权Nitride semiconductor element having m-plane angled semiconductor region and electrode including Mg and Ag 有权具有m面成角度半导体区域的氮化物半导体元件和包含Mg和Ag的电极公开(公告)号：US08933543B2
公开(公告)日：2015-01-13
申请号：US13503972
申请日：2011-03-15
IPC分类号： H01L33/16 , H01L21/02 , H01L33/40 , H01L23/532 , H01L33/00 , H01L33/32 , H01S5/042 , H01S5/32 , H01S5/323
CPC分类号： H01L21/02579 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L23/53247 , H01L33/0075 , H01L33/16 , H01L33/32 , H01L33/40 , H01L2224/13 , H01L2924/12032 , H01L2933/0016 , H01S5/0425 , H01S5/3202 , H01S5/32341 , H01L2924/00
摘要： A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5°; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x≧0, y≧0, and z≧0) layer 26. The electrode 30 includes a Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译： 本发明的氮化物系半导体器件包括：氮化物系半导体多层结构体20，其具有p型半导体区域，表面12从m面倾斜不小于1°的角度， 超过5°; 以及设置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z≥0）层26形成。电极30包括Mg层32和Ag层34 设置在Mg层32上.Mg层32与半导体多层结构体20的p型半导体区域的表面12接触。
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公开(公告)号：US08729587B2
公开(公告)日：2014-05-20
申请号：US13596849
申请日：2012-08-28
申请人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
发明人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
CPC分类号： H01L33/40 , B82Y20/00 , H01L29/045 , H01L33/0075 , H01L33/0079 , H01L33/16 , H01L33/32 , H01L2933/0016 , H01S5/0425 , H01S5/32341
摘要： An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure 20 which has a p-type GaN-based semiconductor region whose surface 12 is inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is arranged on the p-type GaN-based semiconductor region. The electrode 30 includes a Mg alloy layer 32 which is formed from Mg and metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with the surface 12 of the p-type GaN-based semiconductor region of the semiconductor multilayer structure 20.
摘要翻译： 示例性的基于氮化物的半导体器件包括：氮化物基半导体多层结构20，其具有p型GaN基半导体区域，其表面12从m面倾斜不小于1°的角度，而不是更多 超过5°或主表面具有多个m平面步骤; 以及布置在p型GaN基半导体区域上的电极30。 电极30包括由Mg和选自Pt，Mo和Pd的金属形成的Mg合金层32。 Mg合金层32与半导体多层结构体20的p型GaN类半导体区域的表面12接触。
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10.发明授权Method for fabricating nitride-based semiconductor device having electrode on m-plane 有权一种在m面上具有电极的氮化物基半导体器件的制造方法公开(公告)号：US08334199B2
公开(公告)日：2012-12-18
申请号：US12937758
申请日：2010-03-17
IPC分类号： H01L21/3205
CPC分类号： H01L21/28575 , H01L33/16 , H01L33/32 , H01L33/40
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译： 氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体多层结构体20上的电极30.电极30包括Zn层32和设置在Zn层32上的Ag层34.Zn层32与p型半导体区域的表面接触 半导体多层结构20。
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