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102 条记录 (耗时 0.047 秒)

    Method of fabricating a metal gate semiconductor device
    61.
    发明授权
    Method of fabricating a metal gate semiconductor device 有权
    制造金属栅极半导体器件的方法

    公开(公告)号：US09209089B2

    公开(公告)日：2015-12-08

    申请号：US13434344

    申请日：2012-03-29

    申请人： Sheng-Chen Chung ,  Ming Zhu ,  Jyun-Ming Lin ,  Bao-Ru Young ,  Hak-Lay Chuang

    发明人： Sheng-Chen Chung ,  Ming Zhu ,  Jyun-Ming Lin ,  Bao-Ru Young ,  Hak-Lay Chuang

    IPC分类号： H01L21/3205 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51

    CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/28202 ,  H01L21/82385 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/517

    摘要： A method of semiconductor device fabrication including providing a substrate having a gate dielectric layer such as a high-k dielectric disposed thereon. A tri-layer element is formed on the gate dielectric layer. The tri-layer element includes a first capping layer, a second capping layer, and a metal gate layer interposing the first and second capping layer. One of an nFET and a pFET gate structure are formed using the tri-layer element, for example, the second capping layer and the metal gate layer may form a work function layer for one of an nFET and a pFET device. The first capping layer may be a sacrificial layer used to pattern the metal gate layer.

    摘要翻译： 一种半导体器件制造方法，包括提供具有栅极电介质层的衬底，例如设置在其上的高k电介质。 在栅介质层上形成三层元件。 三层元件包括第一覆盖层，第二覆盖层和插入第一和第二覆盖层的金属栅极层。 使用三层元件形成nFET和pFET栅极结构之一，例如，第二覆盖层和金属栅极层可以形成nFET和pFET器件中的一个的功函数层。 第一覆盖层可以是用于图案化金属栅极层的牺牲层。

    Device with a vertical gate structure
    62.
    发明授权
    Device with a vertical gate structure 有权
    具有垂直栅极结构的器件

    公开(公告)号：US08742492B2

    公开(公告)日：2014-06-03

    申请号：US13568997

    申请日：2012-08-07

    申请人： Hak-Lay Chuang ,  Ming Zhu ,  Yi-Ren Chen

    发明人： Hak-Lay Chuang ,  Ming Zhu ,  Yi-Ren Chen

    IPC分类号： H01L29/66

    CPC分类号： H01L29/66795 ,  H01L21/28114 ,  H01L21/76885 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823885 ,  H01L29/42376

    摘要： A device includes a wafer substrate, a conical frustum structure formed in the wafer substrate, and a gate all-around (GAA) structure circumscribing the middle portion of the conical frustum structure. The conical frustum structure includes a drain formed at a bottom portion of the conical frustum, a source formed at a top portion of the vertical conical frustum, and a channel formed at a middle portion of the conical frustum connecting the source and the drain. The GAA structure overlaps with the source at one side of the GAA structure, crosses over the channel, and overlaps with the drain at another side of the GAA structure.

    摘要翻译： 一种器件包括晶片衬底，形成在晶片衬底中的锥形截头锥体结构，以及围绕锥形截头锥体结构的中间部分的栅极全能（GAA）结构。 锥形截头锥体结构包括形成在锥形截头锥体的底部处的排水口，形成在垂直锥形截头锥体的顶部处的源和形成在连接源极和漏极的锥形截头锥体的中间部分处的通道。 GAA结构与GAA结构一侧的源重叠，与沟道交叉，并与GAA结构另一侧的漏极重叠。

    ENHANCED GATE REPLACEMENT PROCESS FOR HIGH-K METAL GATE TECHNOLOGY
    65.
    发明申请
    ENHANCED GATE REPLACEMENT PROCESS FOR HIGH-K METAL GATE TECHNOLOGY 有权
    用于高K金属门技术的增强门更换过程

    公开(公告)号：US20130154021A1

    公开(公告)日：2013-06-20

    申请号：US13328382

    申请日：2011-12-16

    申请人： Hak-Lay Chuang ,  Ming Zhu

    发明人： Hak-Lay Chuang ,  Ming Zhu

    IPC分类号： H01L27/092 ,  H01L21/28

    CPC分类号： H01L29/66545 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/3212 ,  H01L21/823842 ,  H01L21/823857

    摘要： The present disclosure provides a method of fabricating a semiconductor device. A high-k dielectric layer is formed over a substrate. A first capping layer is formed over a portion of the high-k dielectric layer. A second capping layer is formed over the first capping layer and the high-k dielectric layer. A dummy gate electrode layer is formed over the second capping layer. The dummy gate electrode layer, the second capping layer, the first capping layer, and the high-k dielectric layer are patterned to form an NMOS gate and a PMOS gate. The NMOS gate includes the first capping layer, and the PMOS gate is free of the first capping layer. The dummy gate electrode layer of the PMOS gate is removed, thereby exposing the second capping layer of the PMOS gate. The second capping layer of the PMOS gate is transformed into a third capping layer.

    摘要翻译： 本公开提供了制造半导体器件的方法。 在衬底上形成高k电介质层。 在高k电介质层的一部分上形成第一覆盖层。 在第一覆盖层和高k电介质层上形成第二覆盖层。 在第二盖层上形成虚拟栅电极层。 对虚拟栅极电极层，第二覆盖层，第一覆盖层和高k电介质层进行构图以形成NMOS栅极和PMOS栅极。 NMOS栅极包括第一覆盖层，PMOS栅极不含第一覆盖层。 去除PMOS栅极的伪栅极电极层，从而暴露PMOS栅极的第二覆盖层。 PMOS栅极的第二覆盖层被转换成第三覆盖层。

    Hybrid transistor
    67.
    发明授权
    Hybrid transistor 有权
    混合晶体管

    公开(公告)号：US08288800B2

    公开(公告)日：2012-10-16

    申请号：US12651487

    申请日：2010-01-04

    申请人： Ming Zhu ,  Chun Shan Yin ,  Elgin Quek ,  Shyue Seng Tan

    发明人： Ming Zhu ,  Chun Shan Yin ,  Elgin Quek ,  Shyue Seng Tan

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7885 ,  H01L21/28273 ,  H01L29/66795 ,  H01L29/66825 ,  H01L29/785

    摘要： A method of forming a device is disclosed. The method includes providing a substrate having an active area. A gate is formed on the substrate. First and second current paths through the gate are formed. The first current path serves a first purpose and the second current path serves a second purpose. The gate controls selection of the current paths.

    摘要翻译： 公开了一种形成装置的方法。 该方法包括提供具有活性区域的基底。 在基板上形成栅极。 形成通过栅极的第一和第二电流路径。 第一电流通路用于第一目的，第二电流通路用于第二目的。 门控制当前路径的选择。

    Compositions and methods for protecting cells during cancer chemotherapy and radiotherapy
    69.
    发明授权
    Compositions and methods for protecting cells during cancer chemotherapy and radiotherapy 失效
    癌症化疗和放疗期间保护细胞的组合物和方法

    公开(公告)号：US07531562B2

    公开(公告)日：2009-05-12

    申请号：US10881028

    申请日：2004-06-30

    申请人： William E. Fahl ,  Nalini Raghavachari ,  Ming Zhu ,  John A. Kink

    发明人： William E. Fahl ,  Nalini Raghavachari ,  Ming Zhu ,  John A. Kink

    IPC分类号： A61K31/425

    CPC分类号： A61K31/497 ,  A61K9/127 ,  A61K9/1272 ,  A61K35/36

    摘要： Compositions, pharmaceutical preparations and methods are disclosed for protecting non-neoplastic cells from damage caused by cancer chemotherapeutic agents or radiation therapy, during the course of cancer therapy or bone marrow transplant. These are based on the use of chemoprotective inducing agents that induce or increase production of cellular detoxification enzymes in target cell populations. The compositions and methods are useful to reduce or prevent hair loss, gastrointestinal distress and lesions of the skin and oral mucosa that commonly occur in patients undergoing cancer therapy. Also disclosed is a novel assay system for identifying new chemoprotective inducing agents.

    摘要翻译： 公开了用于在癌症治疗或骨髓移植过程中保护非肿瘤细胞免受由癌症化学治疗剂或放射治疗引起的损伤的组合物，药物制剂和方法。 这些是基于在靶细胞群体中诱导或增加细胞解毒酶的产生的化学保护诱导剂的用途。 组合物和方法可用于减少或预防通常在经历癌症治疗的患者中发生的脱发，胃肠道窘迫和皮肤和口腔粘膜损伤。 还公开了用于鉴定新的化学保护诱导剂的新型测定系统。