公开(公告)号：US20070183697A1

公开(公告)日：2007-08-09

申请号：US10597957

申请日：2005-02-14

Applicant: Heon Lee

Inventor： Heon Lee

IPC: F16C32/06

CPC classification number: F16C17/024 ,  F16C27/02

Abstract: The present invention provides a radial foil bearing for supporting a high-speed rotating shaft. The radial foil bearing comprises a top foil (1): a key (2) welded to a cut portion of the top foil; an inner bump coil (3) disposed outwards of the top foil, the inner bump being formed of a wider and higher bump and a narrower and lower bump alternately arranged; an outer bump foil (4) disposed outwards of the inner coil, the outer bump having a height lower the that of the narrower and lower bump of the inner bump foil; a bump sheet (5) for fixing the inner bump and the outer bump; and a bearing housing (6) disposed outwards of the bump sheet and having a key groove (7).

Abstract translation: 本发明提供一种用于支撑高速旋转轴的径向箔片轴承。 径向箔片轴承包括顶部箔片（1）：焊接到顶部箔片的切割部分的键（2） 设置在所述顶部箔的外侧的内部凸起线圈（3），所述内部凸起由更宽和更高的凸块形成，并且交替地布置有较小和较小的凸块; 设置在所述内部线圈的外侧的外部凸起箔（4），所述外部凸起的高度低于所述内部凸块箔的较窄和下部凸起的高度; 用于固定所述内凸块和所述外凸块的凸块（5）; 以及设置在凸块的外侧并具有键槽（7）的轴承壳体（6）。

公开(公告)号：US20070047253A1

公开(公告)日：2007-03-01

申请号：US11511628

申请日：2006-08-29

Applicant: Heon Lee ,  Eung Kim ,  Myung Lee ,  Bong Lee ,  Min Kwak ,  Seon Son

Inventor： Heon Lee ,  Eung Kim ,  Myung Lee ,  Bong Lee ,  Min Kwak ,  Seon Son

IPC: A47F3/00

CPC classification number: G02B5/08 ,  G02B1/04 ,  G02B6/0031 ,  G02B6/0085 ,  G02F1/133605 ,  G02F2001/133628 ,  Y10T428/10

Abstract: The present invention relates to a reflection plate for a backlight unit in a liquid crystal display device, and more particularly, to a reflection plate for a backlight unit in a liquid crystal display device, which is made of a thermoplastic thermal conductive resin composition having a thermal conductivity of at least 0.35 W/mK, thereby effectively solving the thermal problem of the backlight unit, and having excellent properties such as shock resistance, heat resistance, mechanical strength, and the like, as well as having excellent reflectivity, thereby improving the durability of the liquid crystal display device. Furthermore, the present invention relates to a backlight unit of a liquid crystal display device, comprising a reflection plate positioned at a lower portion of a lamp of the backlight unit for reflecting the light coming out of the lamp, a supporting rod for the lamp, and a lower plate functioning as a heat sink, wherein the reflection plate and the lower plate are made of the same material, thereby effectively solving the thermal problem of the backlight unit, and simplifying the manufacturing process.

Abstract translation: 本发明涉及一种液晶显示装置中的背光单元用反射板，更具体地，涉及一种液晶显示装置中的背光单元用反射板，该反射板由热塑性导热性树脂组合物 热导率至少为0.35W / mK，从而有效地解决了背光单元的热问题，并且具有优异的耐冲击性，耐热性，机械强度等特性，并且具有优异的反射率，从而改善了 液晶显示装置的耐久性。 此外，本发明涉及一种液晶显示装置的背光单元，包括位于背光单元的灯的下部的反射板，用于反射从灯出来的光，用于灯的支撑杆， 以及用作散热器的下板，其中反射板和下板由相同的材料制成，从而有效地解决了背光单元的热问题，并简化了制造工艺。

公开(公告)号：US07153781B2

公开(公告)日：2006-12-26

申请号：US10638673

申请日：2003-08-11

Applicant: Heon Lee ,  Young-Jin Park

Inventor： Heon Lee ,  Young-Jin Park

IPC: H01L21/302

CPC classification number: H01L21/32137 ,  H01L21/28123 ,  H01L21/31629 ,  H01L21/823481

Abstract: In a process for etching poly Si gate stacks with raised STI structure where the thickness of poly Si gates at the AA and STI are different, the improvement comprising: a) etching a gate silicide layer+a poly Si 2 layer; b) forming a continuous poly Si passivation layer on sidewalls of the silicide and poly Si 2 layers and at the interface of the poly Si 2 layer and a poly Si 1 layer and affecting thermal oxidation to form an underlying thin Si oxide gate layer; c) affecting a Si oxide breakthrough etch to clear the passivation layer at interface of the poly Si 2 and the poly Si 1 layers while leaving intact the passivation layer on the sidewalls of the silicide and the poly Si 2 layers; and d) etching the poly Si 1 layer with an oxide selective process to preserve the underlying thin gate oxide and thin passivation layer at the sidewall to obtain vertical profiles of poly Si gate stacks both at the AA and the STI oxide.

Abstract translation: 在用于蚀刻具有凸起的STI结构的多晶硅栅极堆叠的过程中，其中AA和STI处的多晶硅栅极的厚度不同，其改进包括：a）蚀刻栅极硅化物层+多晶硅层; b）在硅化物和多晶硅层的侧壁上以及在多晶硅层和多晶硅层的界面处形成连续的多晶硅钝化层，并影响热氧化以形成下薄的氧化硅栅极层; c）影响Si氧化物穿透蚀刻以在多晶硅2和多晶硅层的界面处清除钝化层，同时在硅化物和多晶硅层的侧壁上完整地保留钝化层; 和d）用氧化物选择性工艺蚀刻多晶Si层，以在侧壁处保留下面的薄栅极氧化物和薄的钝化层，以在AA和STI氧化物上获得多晶硅栅极叠层的垂直分布。

公开(公告)号：US06984530B2

公开(公告)日：2006-01-10

申请号：US10811553

申请日：2004-03-29

Applicant: Heon Lee ,  Thomas C. Anthony ,  Manish Sharma

Inventor： Heon Lee ,  Thomas C. Anthony ,  Manish Sharma

IPC: H01L21/00

CPC classification number: H01L27/222 ,  H01L43/12

Abstract: A method of fabricating a magnetic random access memory (MRAM) device is disclosed. The method reduces the number of mask steps and processing steps required to fabricate the MRAM device. A first conductive layer and a sense layer are patterned in a first mask step. A subsequent etching step forms a bottom electrode and a sense layer that are continuous with each other in a first direction. A second conductive layer and a plurality of layers of material required to form a magnetic tunnel junction stack are patterned in a second mask step. A subsequent etching step forms a top electrode and a plurality of layers of material that are continuous with each other in a second direction, and a plurality of discrete sense layers. The discrete sense layers and the plurality of layers of material define a plurality of magnetic tunnel junction devices.

Abstract translation: 公开了制造磁随机存取存储器（MRAM）装置的方法。 该方法减少了制造MRAM设备所需的掩模步骤和处理步骤的数量。 第一导电层和感测层在第一掩模步骤中被图案化。 随后的蚀刻步骤形成在第一方向上彼此连续的底部电极和感测层。 在第二掩模步骤中图案化形成磁性隧道结叠层所需的第二导电层和多层材料。 随后的蚀刻步骤形成在第二方向上彼此连续的顶部电极和多个材料层，以及多个离散感测层。 离散感测层和多层材料限定了多个磁性隧道结装置。

公开(公告)号：US20050254292A1

公开(公告)日：2005-11-17

申请号：US10843787

申请日：2004-05-11

Applicant: Thomas Anthony ,  Frederick Perner ,  Heon Lee ,  Robert Walmsley

Inventor： Thomas Anthony ,  Frederick Perner ,  Heon Lee ,  Robert Walmsley

IPC: G11C11/14 ,  G11C11/16

CPC classification number: G11C11/16 ,  G11C11/1675

Abstract: The present invention provides a magnetic memory device that includes a magnetic memory cell switchable between two states by the application of a magnetic field wherein the magnetic field for such switching is dependent in part on a memory cell temperature. The device further includes at least one heater element proximate to the magnetic memory cell and series connected with the magnetic memory cell for heating of the magnetic memory cell. The device also includes a circuit for selectively applying the electrical current through the at least one heater element so as to heat the cell and facilitate cell state-switching.

Abstract translation: 本发明提供了一种磁存储器件，其包括通过施加磁场在两个状态之间切换的磁存储器单元，其中用于这种切换的磁场部分地取决于存储单元温度。 该装置还包括靠近磁存储器单元的至少一个加热器元件，并且与磁存储单元连接的用于加热磁存储单元的串联。 该装置还包括用于选择性地施加电流通过至少一个加热器元件以便加热电池并促进电池状态切换的电路。

公开(公告)号：US20050241901A1

公开(公告)日：2005-11-03

申请号：US11056252

申请日：2005-02-14

Applicant: In Joo ,  Jae Jang ,  Dong Kim ,  Wan Choi ,  Jin Lee ,  Eun Park ,  Heon Lee

Inventor： In Joo ,  Jae Jang ,  Dong Kim ,  Wan Choi ,  Jin Lee ,  Eun Park ,  Heon Lee

IPC: F16H41/26 ,  F16H45/02

CPC classification number: F16H45/02 ,  F16H41/26 ,  F16H2041/285 ,  F16H2045/0294

Abstract: A torque converter for a vehicle includes a front cover integrally formed with a boss to which a crank shaft of an engine side is connected, an impeller connected to the front cover to rotate together with the front cover, a turbine disposed facing the impeller, a stator disposed between the impeller and the turbine to convert flow of oil directed from the turbine, and a lockup clutch mechanism for directly connecting the engine to the turbine. The impeller, turbine, stator define a torque fluid actuating portion. An actuating chamber C has a ratio (D2/D1) of an inner diameter D2 to an outer diameter D1 is in a range of about 0.55-0.61.

Abstract translation: 一种用于车辆的变矩器，包括：前盖，其整体地形成有与发动机侧的曲轴连接的凸台;连接到前盖的叶轮与前盖一起旋转，与所述叶轮相对设置的涡轮机; 定子设置在叶轮和涡轮之间以转换从涡轮机引导的油流，以及用于将发动机直接连接到涡轮机的锁止离合器机构。 叶轮，涡轮机，定子限定了扭矩流体致动部分。 致动室C的内径D 2与外径D 1的比（D 2 / D 1）在约0.55-0.61的范围内。

公开(公告)号：US20050170533A1

公开(公告)日：2005-08-04

申请号：US10769107

申请日：2004-01-30

Applicant: Heon Lee ,  Manish Sharma

Inventor： Heon Lee ,  Manish Sharma

IPC: G11B5/127 ,  H01L21/00 ,  H01L21/8242 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L43/08

Abstract: A magnetic tunnel junction device with a compositionally modulated electrode and a method of fabricating a magnetic tunnel junction device with a compositionally modulated electrode are disclosed. An electrode in electrical communication with a data layer of the magnetic tunnel junction device includes a high resistivity region that has a higher resistivity than the electrode. As a result, a current flowing through the electrode generates joule heating in the high resistivity region and that joule heating increases a temperature of the data layer and reduces a coercivity of the data layer. Consequently, a magnitude of a switching field required to rotate an alterable orientation of magnetization of the data layer is reduced. The high resistivity region can be fabricated using a plasma oxidation, a plasma nitridation, a plasma carburization, or an alloying process.

Abstract translation: 公开了一种具有组成调制电极的磁性隧道结器件和一种制造具有组成调制电极的磁性隧道结器件的方法。 与磁性隧道结装置的数据层电连通的电极包括具有比电极更高的电阻率的高电阻率区域。 结果，流过电极的电流在高电阻率区域产生焦耳加热，并且焦耳加热增加数据层的温度并降低数据层的矫顽力。 因此，减小了旋转数据层的磁化方向的可变方向所需的切换场的大小。 高电阻率区域可以使用等离子体氧化，等离子体氮化，等离子体渗碳或合金化工艺来制造。

公开(公告)号：US20050156215A1

公开(公告)日：2005-07-21

申请号：US11080092

申请日：2005-03-14

Applicant: Heon Lee

Inventor： Heon Lee

IPC: H01L21/336 ,  H01L27/22 ,  H01L31/113 ,  H01L43/12

CPC classification number: H01L27/222 ,  H01L43/12

Abstract: A method of making a magnetic tunnel junction device is disclosed. The magnetic tunnel junction device includes a magnetic tunnel junction stack and an electrically non-conductive spacer in contact with a portion of the magnetic tunnel junction stack. The spacer electrically insulates a portion of the magnetic tunnel junction stack from an electrically conductive material used for a via that is in contact with the magnetic tunnel junction stack and a top conductor. The spacer can also prevent an electrical short between a bottom conductor and the top conductor. The spacer can prevent electrical shorts when the magnetic tunnel junction stack and a self-aligned via are not aligned with each other.

Abstract translation: 公开了制造磁性隧道结装置的方法。 磁性隧道结装置包括磁性隧道结叠层和与磁性隧道结叠层的一部分接触的非导电间隔物。 间隔件将磁性隧道结堆叠的一部分与用于与磁性隧道结叠层和顶部导体接触的通路的导电材料电绝缘。 隔离器还可以防止底部导体和顶部导体之间的电短路。 当磁性隧道结堆叠和自对准通孔彼此不对齐时，间隔件可以防止电气短路。

公开(公告)号：US20050150404A1

公开(公告)日：2005-07-14

申请号：US11065171

申请日：2005-02-23

Applicant: Heon Lee ,  Gun-Young Jung

Inventor： Heon Lee ,  Gun-Young Jung

IPC: B82B3/00 ,  B81C1/00 ,  G03F7/00 ,  H01L21/027 ,  B41K1/42

CPC classification number: B82Y10/00 ,  B81C99/009 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0017 ,  Y10T428/24355

Abstract: A hardened nano-imprinting stamp and a method of forming a hardened nano-imprinting stamp are disclosed. The hardened nano-imprinting stamp includes a plurality of silicon-based nano-sized features that have an hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The hardened shell is made harder than the underlying silicon by a plasma carburization and/or a plasma nitridation process. During the plasma process atoms of carbon and/or nitrogen bombard and penetrate a plurality of exposed surfaces of the nano-sized features and chemically react with the silicon to form the hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The lifetime, durability, economy, and accuracy of the resulting hardened nano-imprinting stamp are improved.

Abstract translation: 公开了一种硬化的纳米压印印模和形成硬化的纳米压印印模的方法。 硬化的纳米压印印模包括多个硅基纳米尺寸特征，其具有碳化硅，氮化硅或碳化硅氮化物的硬化壳。 通过等离子体渗碳和/或等离子体氮化处理使硬化的壳比下面的硅更硬。 在等离子体工艺期间，碳和/或氮原子轰击并穿透纳米尺寸特征的多个暴露表面并与硅发生化学反应以形成碳化硅，氮化硅或碳化硅氮化物的硬化壳。 提高了所得到的硬化纳米压印印模的寿命，耐久性，经济性和精度。

公开(公告)号：US20050102720A1

公开(公告)日：2005-05-12

申请号：US10692774

申请日：2003-10-24

Applicant: Heon Lee

Inventor： Heon Lee

IPC: H01L21/00 ,  H01L27/22 ,  H01L43/12

CPC classification number: H01L43/12 ,  H01L27/222

Abstract: A method of making a magnetic tunnel junction device is disclosed. The method includes forming an etch stop layer on a magnetic tunnel junction stack. In subsequent etching steps, the etch stop layer protects one or more layers of magnetic material in the magnetic tunnel junction stack from chemical erosion caused by an etch material, such as an etch material that includes the chemical fluorine (F), for example. The etch stop layer is made from an electrically conductive material. The method also reduces the number of process steps by forming a self-aligned via in a dielectric layer. A deposition of a second electrically conductive material completely fills the self-aligned via and covers the dielectric layer to form a dual-damascene conductor in one processing step. The dual-damascene conductor includes a via positioned in the self-aligned via and a top conductor in contact with the dielectric layer.

Abstract translation: 公开了制造磁性隧道结装置的方法。 该方法包括在磁性隧道结叠层上形成蚀刻停止层。 在随后的蚀刻步骤中，蚀刻停止层保护磁性隧道结叠层中的一层或多层磁性材料免受例如由蚀刻材料（例如包括化学氟（F））的蚀刻材料引起的化学侵蚀。 蚀刻停止层由导电材料制成。 该方法还通过在电介质层中形成自对准通孔来减少工艺步骤的数量。 第二导电材料的沉积在一个处理步骤中完全填充自对准通孔并覆盖电介质层以形成双镶嵌导体。 双镶嵌导体包括位于自对准通孔中的通孔和与电介质层接触的顶部导体。