摘要:
The present disclosure relates to a semiconductor memory device and a method of operation the semiconductor memory device, which sets an encoding value by sequentially defining ranges used for recognizing distribution of memory cells based on a middle range and then performing a read operation in an order from the middle ranges to an outermost range, thereby capable of using infinite ranges for recognizing the distribution of the memory cells without addition of a circuit to an inside of the semiconductor memory device.
摘要:
A method and apparatus to control a position in which data is to be recorded on a holographic data recording medium by using interference between a reference light and a signal light, the method including: irradiating the reference light and the signal light on the holographic data recording medium; generating a focus error signal that indicates a distance difference between a first focus corresponding to a focus of the reference light on the holographic data recording medium and a second focus corresponding to a focus of the signal light on the holographic data recording medium, based on information about a reflective signal light generated when the irradiated signal light is reflected from a reflective transmission layer of the holographic data recording medium; and moving the second focus to a position of the first focus, based on the focus error signal.
摘要:
Disclosed are electrophoretic particles, a method of preparing the same, and an electrophoretic display using the same. The electrophoretic particle includes a coating layer, which includes a co-polymer of styrene and heterocyclic compound, and a pigment surrounded by the coating layer. The method includes polymerizing styrene on a surface of the electrophoretic particle and polymerizing styrene and a heterocyclic compound. The electrophoretic display includes the electrophoretic particles.
摘要:
A method of operating a non-volatile memory device reduces a time for discharging a precharged voltage when a program operation or a read operation is performed, thereby decreasing a total operation time of the non-volatile memory device. The non-volatile memory device discharges a bit line and a word line using only a control signal without reading an algorithm block when a precharged voltage is discharged. The method of operating a non-volatile memory device includes detecting an operation command; generating algorithm blocks for generating an operation voltage, for precharging a bit line and a word line, and for performing a specific operation in accordance with the operation command; outputting a discharge enable control signal for the bit line and the word line; and reading an algorithm of turning off and discharging a voltage generating means for generating the operation voltage.
摘要:
A torque converter for a vehicle includes a front cover integrally formed with a boss to which a crank shaft of an engine side is connected, an impeller connected to the front cover to rotate together with the front cover, a turbine disposed facing the impeller, a stator disposed between the impeller and the turbine to convert flow of oil directed from the turbine, a lockup clutch mechanism for directly connecting the engine to the turbine. A blade of the impeller and/or the turbine is provided with inner and outer projections coupled to shell and core of the impeller and/or the turbine. Each of the inner and outer and inner projections includes a base located on a slit formed on the shell/core and an extending section extending from the base, the extending section being bent after penetrating the slit.
摘要:
A semiconductor memory device includes a normal data storage block configured to store a normal data, a setup data storage block for storing a setup data including at least two duplicate data, an access unit configured to access the normal data of the normal data storage block or the setup data of the setup data storage block, a first transfer unit configured to transfer the setup data accessed by the access unit, a data decision unit configured to determine a correct data based on the setup data transferred by the first transfer unit, a second transfer unit configured to transfer the normal data accessed by the access unit, and a data output unit configured to output the setup data transferred by the first transfer unit or the normal data transferred by the second transfer unit to the outside of the semiconductor memory device in response to a control signal.
摘要:
A nonvolatile memory device is operated by receiving a dual plane read command for simultaneously reading first and second planes, each comprising memory cells, receiving an MSB read address for reading data stored in the memory cells, checking whether an MSB program operation has been performed on each of the first and second planes, and performing the read operation on the first and second planes according to a result of the check and outputting the read data.
摘要:
A nonvolatile memory device is operated by, inter alia, performing a program operation on memory cells belonging to a page selected from among a plurality of pages, performing a verification operation on the programmed memory cells, loading a start loop value of a fail bit count set to the selected page, from among start loop values of fail bit counts set to the respective pages, and if a loop value of the program operation is greater than or equal to the start loop value, counting a number of fail bits included in data of the programmed memory cells detected in the verification operation.
摘要:
A programming method for a nonvolatile memory device includes inputting least significant bit (LSB) data and most significant bit (MSB) data to each of different latches of a page buffer and in the state in which the LSB data and the MSB data have been inputted to the page buffer, performing a programming operation until threshold voltages of selected memory cells reach a target voltage on the basis of the LSB data and the MSB data.
摘要:
A recording method, a recording apparatus, and an optical recording medium that can improve quality of a signal reproduced from a high multi-speed recording medium. The recording method includes generating a box type recording pattern including a first pulse, which has a duration determined according to a length of a recording mark and which has a first power level, and a second pulse which has a second power level different from that of the first power level, and recording data according to the box type recording pattern.