SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME
    1.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME 有权
    半导体存储器件及其操作方法

    公开(公告)号:US20140010008A1

    公开(公告)日:2014-01-09

    申请号:US13615951

    申请日:2012-09-14

    申请人: Byoung In JOO

    发明人: Byoung In JOO

    IPC分类号: G11C16/06

    摘要: The present disclosure relates to a semiconductor memory device and a method of operation the semiconductor memory device, which sets an encoding value by sequentially defining ranges used for recognizing distribution of memory cells based on a middle range and then performing a read operation in an order from the middle ranges to an outermost range, thereby capable of using infinite ranges for recognizing the distribution of the memory cells without addition of a circuit to an inside of the semiconductor memory device.

    摘要翻译: 半导体存储器件和半导体存储器件的操作方法技术领域本公开涉及一种半导体存储器件和半导体存储器件的操作方法,该半导体存储器件通过依次定义用于识别基于中间范围的存储器单元分布的范围来设置编码值,然后以从 中间范围到最外面的范围,从而能够使用无限范围来识别存储器单元的分布,而不向半导体存储器件的内部添加电路。

    Method and apparatus for controlling position in which data is to be recorded
    2.
    发明授权
    Method and apparatus for controlling position in which data is to be recorded 失效
    用于控制要记录数据的位置的方法和装置

    公开(公告)号:US08363532B2

    公开(公告)日:2013-01-29

    申请号:US12571752

    申请日:2009-10-01

    IPC分类号: G11B7/00

    CPC分类号: G11B7/0065

    摘要: A method and apparatus to control a position in which data is to be recorded on a holographic data recording medium by using interference between a reference light and a signal light, the method including: irradiating the reference light and the signal light on the holographic data recording medium; generating a focus error signal that indicates a distance difference between a first focus corresponding to a focus of the reference light on the holographic data recording medium and a second focus corresponding to a focus of the signal light on the holographic data recording medium, based on information about a reflective signal light generated when the irradiated signal light is reflected from a reflective transmission layer of the holographic data recording medium; and moving the second focus to a position of the first focus, based on the focus error signal.

    摘要翻译: 一种通过使用参考光和信号光之间的干涉来控制要在全息数据记录介质上记录数据的位置的方法和装置,所述方法包括:将参考光和信号光照射在全息数据记录上 中; 基于信息产生指示对应于全息数据记录介质上的参考光的焦点的第一焦点与对应于全息数据记录介质上的信号光的焦点的第二焦点之间的距离差的聚焦误差信号 关于当照射的信号光从全息数据记录介质的反射透射层反射时产生的反射信号光; 并且基于聚焦误差信号将第二焦点移动到第一焦点的位置。

    Method of operating a non-volatile memory device
    4.
    发明授权
    Method of operating a non-volatile memory device 失效
    操作非易失性存储器件的方法

    公开(公告)号:US07668030B2

    公开(公告)日:2010-02-23

    申请号:US12117703

    申请日:2008-05-08

    申请人: Byoung In Joo

    发明人: Byoung In Joo

    IPC分类号: G11C7/00

    CPC分类号: G11C8/08 G11C7/12

    摘要: A method of operating a non-volatile memory device reduces a time for discharging a precharged voltage when a program operation or a read operation is performed, thereby decreasing a total operation time of the non-volatile memory device. The non-volatile memory device discharges a bit line and a word line using only a control signal without reading an algorithm block when a precharged voltage is discharged. The method of operating a non-volatile memory device includes detecting an operation command; generating algorithm blocks for generating an operation voltage, for precharging a bit line and a word line, and for performing a specific operation in accordance with the operation command; outputting a discharge enable control signal for the bit line and the word line; and reading an algorithm of turning off and discharging a voltage generating means for generating the operation voltage.

    摘要翻译: 操作非易失性存储器件的方法在执行程序操作或读取操作时减少了放电预充电电压的时间,从而减少了非易失性存储器件的总操作时间。 当预充电电压放电时,非易失性存储器件仅使用控制信号放电位线和字线而不读取算法块。 操作非易失性存储装置的方法包括检测操作命令; 产生用于产生操作电压的算法块,用于对位线和字线进行预充电,并且用于根据操作命令执行特定操作; 输出位线和字线的放电使能控制信号; 以及读取关闭和放电用于产生操作电压的电压产生装置的算法。

    Torque converter for vehicle
    5.
    发明申请
    Torque converter for vehicle 失效
    车辆转矩转换器

    公开(公告)号:US20060065502A1

    公开(公告)日:2006-03-30

    申请号:US11056225

    申请日:2005-02-14

    IPC分类号: F16H45/02

    摘要: A torque converter for a vehicle includes a front cover integrally formed with a boss to which a crank shaft of an engine side is connected, an impeller connected to the front cover to rotate together with the front cover, a turbine disposed facing the impeller, a stator disposed between the impeller and the turbine to convert flow of oil directed from the turbine, a lockup clutch mechanism for directly connecting the engine to the turbine. A blade of the impeller and/or the turbine is provided with inner and outer projections coupled to shell and core of the impeller and/or the turbine. Each of the inner and outer and inner projections includes a base located on a slit formed on the shell/core and an extending section extending from the base, the extending section being bent after penetrating the slit.

    摘要翻译: 一种用于车辆的变矩器,包括:前盖,其整体地形成有与发动机侧的曲轴连接的凸台;连接到前盖的叶轮与前盖一起旋转,与所述叶轮相对设置的涡轮机; 定子布置在叶轮和涡轮之间以转换从涡轮机引导的油流,用于将发动机直接连接到涡轮机的锁止离合器机构。 叶轮和/或涡轮机的叶片设置有联接到叶轮和/或涡轮机的壳和芯的内部和外部突出部。 内外凸部分别具有形成在壳/芯上的狭缝上的基部和从基部延伸的延伸部,该延伸部在穿透狭缝后弯曲。

    SEMICONDUCTOR MEMORY DEVICE AND TEST METHOD OF THE SAME
    6.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND TEST METHOD OF THE SAME 有权
    半导体存储器件及其测试方法

    公开(公告)号:US20130166959A1

    公开(公告)日:2013-06-27

    申请号:US13494492

    申请日:2012-06-12

    IPC分类号: G06F12/00 G06F11/28

    CPC分类号: G11C29/24 G11C15/00 G11C16/20

    摘要: A semiconductor memory device includes a normal data storage block configured to store a normal data, a setup data storage block for storing a setup data including at least two duplicate data, an access unit configured to access the normal data of the normal data storage block or the setup data of the setup data storage block, a first transfer unit configured to transfer the setup data accessed by the access unit, a data decision unit configured to determine a correct data based on the setup data transferred by the first transfer unit, a second transfer unit configured to transfer the normal data accessed by the access unit, and a data output unit configured to output the setup data transferred by the first transfer unit or the normal data transferred by the second transfer unit to the outside of the semiconductor memory device in response to a control signal.

    摘要翻译: 一种半导体存储装置,包括被配置为存储正常数据的正常数据存储块,用于存储包括至少两个重复数据的建立数据的建立数据存储块,被配置为访问正常数据存储块的正常数据的访问单元, 设置数据存储块的设置数据,被配置为传送由访问单元访问的设置数据的第一传送单元,被配置为基于由第一传送单元传送的设置数据来确定正确数据的数据判定单元,第二传送单元 传送单元,被配置为传送由访问单元访问的正常数据;以及数据输出单元,被配置为将由第一传送单元传送的设置数据或由第二传送单元传送的正常数据输出到半导体存储设备的外部 对控制信号的响应。

    Method of operating nonvolatile memory device capable of reading two planes
    7.
    发明授权
    Method of operating nonvolatile memory device capable of reading two planes 有权
    操作能够读取两个平面的非易失性存储器件的方法

    公开(公告)号:US08270219B2

    公开(公告)日:2012-09-18

    申请号:US12826936

    申请日:2010-06-30

    申请人: Byoung In Joo

    发明人: Byoung In Joo

    IPC分类号: G11C16/04

    CPC分类号: G11C11/5642

    摘要: A nonvolatile memory device is operated by receiving a dual plane read command for simultaneously reading first and second planes, each comprising memory cells, receiving an MSB read address for reading data stored in the memory cells, checking whether an MSB program operation has been performed on each of the first and second planes, and performing the read operation on the first and second planes according to a result of the check and outputting the read data.

    摘要翻译: 通过接收双平面读取命令来操作非易失性存储器件,用于同时读取第一和第二平面,每个平面包括存储器单元,接收用于读取存储在存储器单元中的数据的MSB读取地址,检查是否执行了MSB编程操作 每个第一和第二平面,并且根据检查的结果对第一和第二平面执行读取操作并输出读取的数据。

    Method of operating nonvolatile memory device
    8.
    发明授权
    Method of operating nonvolatile memory device 失效
    操作非易失性存储器件的方法

    公开(公告)号:US08228740B2

    公开(公告)日:2012-07-24

    申请号:US12814451

    申请日:2010-06-12

    申请人: Byoung In Joo

    发明人: Byoung In Joo

    IPC分类号: G11C11/34 G11C16/06

    摘要: A nonvolatile memory device is operated by, inter alia, performing a program operation on memory cells belonging to a page selected from among a plurality of pages, performing a verification operation on the programmed memory cells, loading a start loop value of a fail bit count set to the selected page, from among start loop values of fail bit counts set to the respective pages, and if a loop value of the program operation is greater than or equal to the start loop value, counting a number of fail bits included in data of the programmed memory cells detected in the verification operation.

    摘要翻译: 非易失性存储器件通过尤其对属于从多个页面中选择的页面的存储器单元执行编程操作来操作,对所编程的存储器单元执行验证操作,加载故障位计数的启动循环值 设置到所选择的页面,从设置到各个页面的故障位计数的起始循环值中,并且如果程序操作的循环值大于或等于起始循环值,则对包含在数据中的故障位数进行计数 在验证操作中检测到​​的编程存储器单元。

    PROGRAMMING METHOD FOR NONVOLATILE MEMORY DEVICE
    9.
    发明申请
    PROGRAMMING METHOD FOR NONVOLATILE MEMORY DEVICE 审中-公开
    非易失性存储器件的编程方法

    公开(公告)号:US20110158001A1

    公开(公告)日:2011-06-30

    申请号:US12982794

    申请日:2010-12-30

    申请人: Byoung In JOO

    发明人: Byoung In JOO

    IPC分类号: G11C16/10

    CPC分类号: G11C11/5628 G11C16/10

    摘要: A programming method for a nonvolatile memory device includes inputting least significant bit (LSB) data and most significant bit (MSB) data to each of different latches of a page buffer and in the state in which the LSB data and the MSB data have been inputted to the page buffer, performing a programming operation until threshold voltages of selected memory cells reach a target voltage on the basis of the LSB data and the MSB data.

    摘要翻译: 用于非易失性存储器件的编程方法包括向页缓冲器的每个不同锁存器输入最低有效位(LSB)数据和最高有效位(MSB))数据,并且在LSB数据和MSB数据已被输入的状态 到页缓冲器,执行编程操作,直到所选存储单元的阈值电压基于LSB数据和MSB数据达到目标电压。