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公开(公告)号：US08111087B2
公开(公告)日：2012-02-07
申请号：US12408953
申请日：2009-03-23
IPC分类号： H03K19/094
CPC分类号： G11C14/0081 , G11C11/161 , G11C11/1675 , G11C11/1693 , G11C13/0004 , G11C13/0007 , G11C13/02 , G11C2213/31 , G11C2213/32 , H03K19/0944 , H03K19/18
摘要： A semiconductor integrated circuit includes an n-channel spin FET including one of a magnetic tunnel junction and a magneto-semiconductor junction, the n-channel spin FET including a gate terminal to receive an input signal, a source terminal to receive a first power supply potential, and a drain terminal connected to an output terminal, a p-channel FET including a gate terminal to receive a clock signal, a source terminal to receive a second power supply potential, and a drain terminal connected to the output terminal, a subsequent circuit connected to the output terminal, and a control circuit which turns on the p-channel FET to start charging the output terminal, then turns off the p-channel FET to end the charging, and supplies the input signal to the gate terminal of the n-channel spin FET.
摘要翻译： 半导体集成电路包括包括磁性隧道结和磁半导体结之一的n沟道自旋FET，所述n沟道自旋FET包括用于接收输入信号的栅极端子，用于接收第一电源的源极端子 电位和连接到输出端的漏极端子，包括用于接收时钟信号的栅极端子的p沟道FET，用于接收第二电源电位的源极端子和连接到输出端子的漏极端子，后续 连接到输出端子的电路，以及控制电路，其导通p沟道FET以开始对输出端子充电，然后关闭p沟道FET以结束充电，并将输入信号提供给 n沟道自旋FET。
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公开(公告)号：US20110228596A1
公开(公告)日：2011-09-22
申请号：US12885833
申请日：2010-09-20
申请人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Hisanori Aikawa , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
发明人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Hisanori Aikawa , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
CPC分类号： H01L29/66984 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/1677 , G11C11/1697 , H01L27/224 , H01L43/08
摘要： Certain embodiments provide a spin memory including a memory cell including a ferromagnetic stacked film that has a stacked structure in which a first ferromagnetic layer, a first nonmagnetic layer, a second ferromagnetic layer, a second nonmagnetic layer, and a third ferromagnetic layer are stacked in this order or reverse order, the third ferromagnetic layer and the second ferromagnetic layer being antiferromagnetically exchange-coupled via the second nonmagnetic layer. The ferromagnetic stacked film includes a current path in which a first and second write currents flow from the first ferromagnetic layer to the third ferromagnetic layer to write a first and second magnetization states into the first ferromagnetic layer respectively, and the second write current is higher than the first write current.
摘要翻译： 某些实施例提供一种自旋存储器，其包括一个存储单元，该存储单元包括一个具有层叠结构的铁磁层叠膜，其中第一铁磁层，第一非磁性层，第二铁磁层，第二非磁性层和第三铁磁层堆叠在其中 该顺序或反向顺序，第三铁磁层和第二铁磁层经由第二非磁性层反铁磁交换耦合。 铁磁层叠膜包括电流路径，其中第一和第二写入电流从第一铁磁层流向第三铁磁层，以将第一和第二磁化状态分别写入第一铁磁层，并且第二写入电流高于 第一次写入电流。
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公开(公告)号：US07977719B2
公开(公告)日：2011-07-12
申请号：US12637009
申请日：2009-12-14
IPC分类号： H01L29/76
CPC分类号： H01F10/3231 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01L43/08 , H01L43/10
摘要： It is possible to reduce a current required for spin injection writing. A magneto-resistance effect element includes: a first magnetization pinned layer; a magnetization free layer; a tunnel barrier layer; a second magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and; a non-magnetic layer. When the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au; when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.
摘要翻译： 可以减少自旋注入写入所需的电流。 磁阻效应元件包括：第一磁化固定层; 无磁化层; 隧道势垒层; 第二磁化固定层，其磁化方向固定为与第一磁化固定层的磁化方向基本上反平行; 非磁性层。 当第二磁化固定层由包括Co的铁磁材料制成时，非磁性层的材料是包括选自Zr，Hf，Rh，Ag和Au中的至少一种元素的金属; 当第二磁化被钉扎层由包括Fe的铁磁材料制成时，用于非磁性层的材料是包括选自Rh，Pt，Ir，Al，Ag和Au中的至少一种元素的金属; 并且当第二磁化被钉扎层由包括Ni的铁磁材料制成时，用于非磁性层的材料是包括选自Zr，Hf，Au和Ag中的至少一种元素的金属。
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公开(公告)号：US20100200899A1
公开(公告)日：2010-08-12
申请号：US12700767
申请日：2010-02-05
IPC分类号： H01L29/82 , H01L21/336
CPC分类号： H01L29/66984 , B82Y25/00 , B82Y40/00 , H01F1/405 , H01F10/1936 , H01F10/3254 , H01F41/307 , H01L29/1608 , H01L29/20 , H01L29/22 , H01L29/47
摘要： A spin transistor includes a source electrode, a drain electrode, and a gate electrode on a semiconductor substrate. At least one of the source electrode and the drain electrode includes a semiconductor region and a magnetic layer. The semiconductor region is formed in the semiconductor substrate. The magnetic layer is formed on the semiconductor region, and contains a crystalline Heusler alloy containing at least one of cobalt (Co) and iron (Fe). The semiconductor region and the magnetic layer contain the same impurity element.
摘要翻译： 自旋晶体管包括在半导体衬底上的源电极，漏电极和栅电极。 源电极和漏电极中的至少一个包括半导体区域和磁性层。 半导体区域形成在半导体衬底中。 磁性层形成在半导体区域上，并含有包含钴（Co）和铁（Fe）中的至少一种的结晶Heusler合金。 半导体区域和磁性层含有相同的杂质元素。
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65.发明申请Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy 有权旋转MOS场效应晶体管和隧道磁阻效应元件使用具有Heusler合金的堆叠公开(公告)号：US20100187585A1
公开(公告)日：2010-07-29
申请号：US12662100
申请日：2010-03-31
IPC分类号： H01L29/82
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3929 , G11C11/161 , G11C11/1659 , H01L27/228 , H01L29/66984 , H01L43/08
摘要： A spin MOS field effect transistor includes a source electrode and a drain electrode each having a structure obtained by stacking an impurity diffusion layer, a (001)-oriented MgO layer and a Heusler alloy. The impurity diffusion layer is formed in a surface region of a semiconductor layer. The (001)-oriented MgO layer is formed on the impurity diffusion layer. The Heusler alloy is formed on the MgO layer.
摘要翻译： 自旋MOS场效应晶体管包括源电极和漏电极，每个源极和漏极具有通过层叠杂质扩散层，（001）取向的MgO层和Heusler合金而获得的结构。 杂质扩散层形成在半导体层的表面区域中。 （001）取向的MgO层形成在杂质扩散层上。 Heusler合金形成在MgO层上。
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公开(公告)号：US20100091556A1
公开(公告)日：2010-04-15
申请号：US12637009
申请日：2009-12-14
CPC分类号： H01F10/3231 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01L43/08 , H01L43/10
摘要： It is possible to reduce a current required for spin injection writing. A magneto-resistance effect element includes: a first magnetization pinned layer; a magnetization free layer; a tunnel barrier layer; a second magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and; a non-magnetic layer. When the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au; when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.
摘要翻译： 可以减少自旋注入写入所需的电流。 磁阻效应元件包括：第一磁化固定层; 无磁化层; 隧道势垒层; 第二磁化固定层，其磁化方向固定为与第一磁化固定层的磁化方向基本上反平行; 非磁性层。 当第二磁化固定层由包括Co的铁磁材料制成时，非磁性层的材料是包括选自Zr，Hf，Rh，Ag和Au中的至少一种元素的金属; 当第二磁化被钉扎层由包括Fe的铁磁材料制成时，用于非磁性层的材料是包括选自Rh，Pt，Ir，Al，Ag和Au中的至少一种元素的金属; 并且当第二磁化被钉扎层由包括Ni的铁磁材料制成时，用于非磁性层的材料是包括选自Zr，Hf，Au和Ag中的至少一种元素的金属。
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公开(公告)号：US07663171B2
公开(公告)日：2010-02-16
申请号：US11228326
申请日：2005-09-19
IPC分类号： H01L29/76
CPC分类号： H01F10/3231 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01L43/08 , H01L43/10
摘要： It is possible to reduce a current required for spin injection writing. A magneto-resistance effect element includes: a first magnetization pinned layer; a magnetization free layer; a tunnel barrier layer; a second magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and; a non-magnetic layer. When the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au; when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.
摘要翻译： 可以减少自旋注入写入所需的电流。 磁阻效应元件包括：第一磁化固定层; 无磁化层; 隧道势垒层; 第二磁化固定层，其磁化方向固定为与第一磁化固定层的磁化方向基本上反平行; 非磁性层。 当第二磁化固定层由包括Co的铁磁材料制成时，非磁性层的材料是包括选自Zr，Hf，Rh，Ag和Au中的至少一种元素的金属; 当第二磁化被钉扎层由包括Fe的铁磁材料制成时，用于非磁性层的材料是包括选自Rh，Pt，Ir，Al，Ag和Au中的至少一种元素的金属; 并且当第二磁化被钉扎层由包括Ni的铁磁材料制成时，用于非磁性层的材料是包括选自Zr，Hf，Au和Ag中的至少一种元素的金属。
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公开(公告)号：US07652913B2
公开(公告)日：2010-01-26
申请号：US11608969
申请日：2006-12-11
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , Y10S977/933 , Y10S977/935
摘要： It is made possible to cause spin inversion at a low current density which does not cause element destruction and to conduct writing with a small current. A magnetoresistance effect element includes: a magnetization pinned layer in which magnetization direction is pinned; a magnetic recording layer in which magnetization direction is changeable, the magnetization direction in the magnetization pinned layer forming an angle which is greater than 0 degree and less than 180 degrees with a magnetization direction in the magnetic recording layer, and the magnetization direction in the magnetic recording layer being inverted by injecting spin-polarized electrons into the magnetic recording layer; and a non-magnetic metal layer provided between the magnetization pinned layer and the magnetic recording layer.
摘要翻译： 可以在不会导致元件破坏并以小电流进行写入的低电流密度下引起自旋反转。 磁阻效应元件包括：磁化固定层，其中磁化方向被钉扎; 磁化方向可变化的磁记录层，磁化钉扎层中的磁化方向形成大于0度且小于180度的磁化记录层中的磁化方向的磁化方向和磁记录层中的磁化方向 记录层通过将自旋极化电子注入磁记录层而被反转; 以及设置在磁化被钉扎层和磁记录层之间的非磁性金属层。
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公开(公告)号：US07602636B2
公开(公告)日：2009-10-13
申请号：US11771295
申请日：2007-06-29
IPC分类号： G11C11/00
CPC分类号： H01L29/66984 , B82Y25/00 , H01F10/1936 , H01F10/3254 , H01F10/3272
摘要： A spin MOSFET includes: a semiconductor substrate; a first magnetic film formed on the semiconductor substrate and including a first ferromagnetic layer, a magnetization direction of the first ferromagnetic layer being pinned; a second magnetic film formed on the semiconductor substrate to separate from the first magnetic film and including a magnetization free layer, a first nonmagnetic layer being a tunnel insulator and provided on the magnetization free layer, and a magnetization pinned layer provided on the first nonmagnetic layer, a magnetization direction of the magnetization free layer being changeable and a magnetization direction of the magnetization pinned layer being fixed; a gate insulating film provided at least on the semiconductor substrate between the first magnetic film and the second magnetic film; and a gate electrode formed on the gate insulating film.
摘要翻译： 自旋MOSFET包括：半导体衬底; 形成在所述半导体衬底上并包括第一铁磁层的第一磁性膜，所述第一铁磁层的磁化方向被钉扎; 形成在所述半导体基板上以与所述第一磁性膜分离并且包括无磁化层的第二磁性膜，作为隧道绝缘体的第一非磁性层并且设置在所述磁化自由层上，以及设置在所述第一非磁性层上的磁化固定层 磁化自由层的磁化方向是可变的，并且磁化固定层的磁化方向是固定的; 在所述第一磁性膜和所述第二磁性膜之间至少设置在所述半导体基板上的栅极绝缘膜; 以及形成在栅极绝缘膜上的栅电极。
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公开(公告)号：US07511991B2
公开(公告)日：2009-03-31
申请号：US11750856
申请日：2007-05-18
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16 , H01L43/08
摘要： A spin-injection magnetic random access memory according to an embodiment of the invention includes a magnetoresistive element having a magnetic fixed layer whose magnetization direction is fixed, a magnetic recording layer whose magnetization direction can be changed by injecting spin-polarized electrons, and a tunnel barrier layer provided between the magnetic fixed layer and the magnetic recording layer, a bit line which passes spin-injection current through the magnetoresistive element, the spin-injection current being used for generation of the spin-polarized electrons, a writing word line through which assist current is passed, the assist current being used for the generation of an assist magnetic field in a magnetization easy-axis direction of the magnetoresistive element, and a driver/sinker which determines a direction of the spin-injection current and a direction of the assist current.
摘要翻译： 根据本发明实施例的自旋注入磁随机存取存储器包括具有磁化方向固定的磁固定层的磁阻元件，其磁化方向可以通过注入自旋极化电子而改变的磁记录层，以及隧道 设置在磁性固定层和磁记录层之间的阻挡层，使自旋注入电流通过磁阻元件的位线，用于产生自旋极化电子的自旋注入电流，写入字线， 辅助电流通过，辅助电流用于在磁阻元件的易磁化易磁化方向上产生辅助磁场，以及确定自旋注入电流的方向和驱动器/ 协助电流
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