公开(公告)号：US20060096744A1

公开(公告)日：2006-05-11

申请号：US11269265

申请日：2005-11-08

申请人： Fumiaki Nakamura ,  Yoshiaki Takano ,  Shun Kurata ,  Takahisa Suzuki ,  Takashi Ono ,  Hiroki Naganawa ,  Kinji Ochiai ,  Hiroki Ohara

发明人： Fumiaki Nakamura ,  Yoshiaki Takano ,  Shun Kurata ,  Takahisa Suzuki ,  Takashi Ono ,  Hiroki Naganawa ,  Kinji Ochiai ,  Hiroki Ohara

IPC分类号： F28D7/10

CPC分类号： B23P17/02 ,  F16L7/00 ,  F16L9/18 ,  F25B40/00 ,  F28D7/106 ,  F28F1/06 ,  F28F1/42 ,  F28F1/426 ,  F28F2210/06 ,  Y10T29/49361 ,  Y10T29/49428 ,  Y10T29/49826

摘要： A double-wall pipe includes an outer pipe, and an inner pipe disposed inside the outer pipe. An outer wall of the inner pipe has thereon a ridge portion, which defines a groove portion extending in a longitudinal direction of the inner pipe. The outer pipe and the inner pipe are bent to have a straight portion extending straightly, and a bend portion bent from the straight portion. In the straight portion, the outer pipe has an inside diameter that is larger than an outside diameter of an imaginary cylinder defined by an outer surface of the ridge portion of the inner pipe. Furthermore, the ridge portion of the inner pipe contacts an inside surface of the outer pipe to be readially squeezed and held by the outer pipe, in the bend portion. The double-wall pipe can be suitably used for a refrigerant cycle device.

摘要翻译： 双壁管包括外管和设置在外管内的内管。 内管的外壁具有脊部，该脊部限定在内管的纵向方向上延伸的槽部。 外管和内管弯曲成具有直线延伸的直线部分和从直线部分弯曲的弯曲部分。 在直线部分中，外管的内径大于由内管的脊部的外表面限定的假想气缸的外径。 此外，内管的脊部与外管的内表面接触，以被外管自由地挤压并保持在弯曲部。 双壁管可以适用于制冷剂循环装置。

公开(公告)号：US09669499B2

公开(公告)日：2017-06-06

申请号：US12927924

申请日：2010-11-30

申请人： Fumiaki Nakamura ,  Yoshiaki Takano ,  Shun Kurata ,  Takahisa Suzuki ,  Takashi Ono ,  Hiroki Naganawa ,  Kinji Ochiai ,  Hiroki Ohara

发明人： Fumiaki Nakamura ,  Yoshiaki Takano ,  Shun Kurata ,  Takahisa Suzuki ,  Takashi Ono ,  Hiroki Naganawa ,  Kinji Ochiai ,  Hiroki Ohara

IPC分类号： F28D7/14 ,  B23P17/02 ,  F16L7/00 ,  F16L9/18 ,  F25B40/00 ,  F28D7/10 ,  F28F1/06 ,  F28F1/42

CPC分类号： B23P17/02 ,  F16L7/00 ,  F16L9/18 ,  F25B40/00 ,  F28D7/106 ,  F28F1/06 ,  F28F1/42 ,  F28F1/426 ,  F28F2210/06 ,  Y10T29/49361 ,  Y10T29/49428 ,  Y10T29/49826

摘要： A double-wall pipe includes an outer pipe, and an inner pipe disposed inside the outer pipe. An outer wall of the inner pipe has thereon a ridge portion, which defines a groove portion extending in a longitudinal direction of the inner pipe. The outer pipe and the inner pipe are bent to have a straight portion extending straightly, and a bend portion bent from the straight portion. In the straight portion, the outer pipe has an inside diameter that is larger than an outside diameter of an imaginary cylinder defined by an outer surface of the ridge portion of the inner pipe. Furthermore, the ridge portion of the inner pipe contacts an inside surface of the outer pipe to be radially squeezed and held by the outer pipe, in the bend portion. The double-wall pipe can be suitably used for a refrigerant cycle device.

公开(公告)号：US08993386B2

公开(公告)日：2015-03-31

申请号：US12720089

申请日：2010-03-09

申请人： Hiroki Ohara ,  Toshinari Sasaki

发明人： Hiroki Ohara ,  Toshinari Sasaki

IPC分类号： H01L21/84 ,  C01G51/00 ,  H01L29/786 ,  C01G45/00 ,  H01L27/12 ,  H01L29/66 ,  C01G15/00 ,  C01G53/00 ,  C01G49/00 ,  H01L21/02

CPC分类号： H01L29/66969 ,  C01G15/006 ,  C01G45/006 ,  C01G49/009 ,  C01G51/006 ,  C01G53/006 ,  C01P2002/52 ,  C01P2006/40 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/441 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/7869

摘要： An object is to provide a semiconductor device including a semiconductor element which has favorable characteristics. A manufacturing method of the present invention includes the steps of: forming a first conductive layer which functions as a gate electrode over a substrate; forming a first insulating layer to cover the first conductive layer; forming a semiconductor layer over the first insulating layer so that part of the semiconductor layer overlaps with the first conductive layer; forming a second conductive layer to be electrically connected to the semiconductor layer; forming a second insulating layer to cover the semiconductor layer and the second conductive layer; forming a third conductive layer to be electrically connected to the second conductive layer; performing first heat treatment after forming the semiconductor layer and before forming the second insulating layer; and performing second heat treatment after forming the second insulating layer.

摘要翻译： 目的是提供一种具有有利特性的半导体元件的半导体器件。 本发明的制造方法包括以下步骤：在衬底上形成用作栅电极的第一导电层; 形成第一绝缘层以覆盖所述第一导电层; 在所述第一绝缘层上形成半导体层，使得所述半导体层的一部分与所述第一导电层重叠; 形成与半导体层电连接的第二导电层; 形成覆盖半导体层和第二导电层的第二绝缘层; 形成与第二导电层电连接的第三导电层; 在形成半导体层之后并在形成第二绝缘层之前进行第一热处理; 以及在形成所述第二绝缘层之后进行第二热处理。

公开(公告)号：US08798859B2

公开(公告)日：2014-08-05

申请号：US13996120

申请日：2012-01-31

申请人： Toru Uchino ,  Ryusuke Hirao ,  Yohei Katayama ,  Hiroyuki Yabe ,  Hiroki Ohara

发明人： Toru Uchino ,  Ryusuke Hirao ,  Yohei Katayama ,  Hiroyuki Yabe ,  Hiroki Ohara

IPC分类号： G06F19/00

CPC分类号： B60G17/017 ,  B60G17/018 ,  B60G17/06 ,  B60G17/08 ,  B60G2500/10 ,  F16F9/465

摘要： [Object]The present invention provides a suspension control apparatus that allows miniaturization of a solenoid valve.[Solution]When a controller is started up by a power source controller (a power source unit), the controller switches a control current from 0 ampere to a maximum current value I6 at the same time as the startup. After that, the control shifts to normal control. As a result, even if a hysteresis of a damping force characteristic is large relative to the control current, it is possible to promptly move a solenoid valve to a position to be used in the normal control.

摘要翻译： 本发明提供一种能够使电磁阀小型化的悬架控制装置。 [解决方案]当控制器由电源控制器（电源单元）启动时，控制器在启动的同时将控制电流从0安培切换到最大电流值I6。 之后，控制转移到正常的控制。 结果，即使阻尼力特性的滞后相对于控制电流大，也可以迅速地将电磁阀移动到正常控制中使用的位置。

公开(公告)号：US08669556B2

公开(公告)日：2014-03-11

申请号：US13307398

申请日：2011-11-30

申请人： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Hiroki Ohara ,  Tatsuya Honda ,  Takatsugu Omata ,  Yusuke Nonaka ,  Masahiro Takahashi ,  Akiharu Miyanaga

发明人： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Hiroki Ohara ,  Tatsuya Honda ,  Takatsugu Omata ,  Yusuke Nonaka ,  Masahiro Takahashi ,  Akiharu Miyanaga

IPC分类号： H01L29/04

CPC分类号： H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.

摘要翻译： 提供了具有更稳定的导电性的氧化物半导体膜。 此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。 氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。 通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

公开(公告)号：US20130275003A1

公开(公告)日：2013-10-17

申请号：US13996120

申请日：2012-01-31

申请人： Toru Uchino ,  Ryusuke Hirao ,  Yohei Katayama ,  Hiroyuki Yabe ,  Hiroki Ohara

发明人： Toru Uchino ,  Ryusuke Hirao ,  Yohei Katayama ,  Hiroyuki Yabe ,  Hiroki Ohara

IPC分类号： B60G17/06

CPC分类号： B60G17/017 ,  B60G17/018 ,  B60G17/06 ,  B60G17/08 ,  B60G2500/10 ,  F16F9/465

摘要： [Object]The present invention provides a suspension control apparatus that allows miniaturization of a solenoid valve.[Solution]When a controller is started up by a power source controller (a power source unit), the controller switches a control current from 0 ampere to a maximum current value I6 at the same time as the startup. After that, the control shifts to normal control. As a result, even if a hysteresis of a damping force characteristic is large relative to the control current, it is possible to promptly move a solenoid valve to a position to be used in the normal control.

摘要翻译： 本发明提供一种能够使电磁阀小型化的悬架控制装置。 [解决方案]当控制器由电源控制器（电源单元）启动时，控制器在启动的同时将控制电流从0安培切换到最大电流值I6。 之后，控制转移到正常的控制。 结果，即使阻尼力特性的滞后相对于控制电流大，也可以迅速地将电磁阀移动到正常控制中使用的位置。

公开(公告)号：US08546180B2

公开(公告)日：2013-10-01

申请号：US12846534

申请日：2010-07-29

申请人： Shunpei Yamazaki ,  Hiroki Ohara ,  Toshinari Sasaki ,  Kosei Noda ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Hiroki Ohara ,  Toshinari Sasaki ,  Kosei Noda ,  Hideaki Kuwabara

IPC分类号： H01L21/00

CPC分类号： H01L27/1225 ,  G02F1/133345 ,  G02F1/1337 ,  G02F1/134309 ,  G02F1/136227 ,  G02F1/136277 ,  G02F1/1368 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/24 ,  H01L29/517 ,  H01L29/78609 ,  H01L29/7869

摘要： An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.

摘要翻译： 目的在于提供一种半导体器件，其具有可以充分降低布线之间的寄生电容的结构。 用作沟道保护层的氧化物绝缘层形成在与栅电极层重叠的氧化物半导体层的一部分上。 在与氧化物绝缘层的形成相同的步骤中，形成覆盖氧化物半导体层的周边部分的氧化物绝缘层。 设置覆盖氧化物半导体层的周边部分的氧化物绝缘层以增加栅极电极层与形成在栅电极层的上方或周围的布线层之间的距离，从而降低寄生电容。