摘要:
The present invention relates to a semiconductor laser apparatus having a structure for preventing the corrosion of a refrigerant flow path in a heat sink and for cooling a semiconductor laser array stably over a long period of time. The semiconductor laser apparatus comprises a semiconductor laser stack in which a plurality of semiconductor laser units are stacked, a refrigerant supplier, a piping for connecting these components, and a refrigerant flowing through these components. The refrigerant supplier supplies the refrigerant to the semiconductor laser stack. The refrigerant is comprised of fluorocarbon. Each of the semiconductor laser units is constituted by a pair of a semiconductor laser array and a heat sink. The heat sink has a refrigerant flow path.
摘要:
A fuel cell comprises a proton conductive membrane, an anode catalyst layer provided on one surface of the proton conductive membrane, and a cathode catalyst layer provided partly on another surface of the proton conductive membrane, wherein water generated in the cathode catalyst layer is supplied to the anode catalyst layer through the proton conductive membrane, and the fuel cell further comprises a water-diffusing portion which is provided on the another surface of the proton conductive membrane and is in contact with the cathode catalyst layer.
摘要:
In this laser beam machine 1, while a pressing portion 9 of an optical guide member 6 presses a lid 13 against a body 12 of a container, the optical guide member 6 annularly guides a laser beam propagated through an optical fiber 4 and outputs it from the pressing portion 9. Thereby, an annular processing region of the body 12 and the lid 13 is entirely irradiated with the laser beam at one time and the lid 13 can be joined to the body 12, whereby improving the working efficiency. Such improvement in working efficiency shortens the processing time and improves the production yield. Furthermore, this laser beam machine 1 does not need to be separately provided with a rotating mechanism for laser beam scanning and a pressurizing mechanism for the body 12 and the lid 13, so that construction of the machine can be significantly simplified.
摘要:
An optical condenser device has light sources (10, 20) and an optical combiner (30). Each light source (10, 20) includes a semiconductor laser array (12, 22), a collimator lens (16, 26) and a beam converter (18, 28). The optical combiner (30) combines the beams from the light sources (10, 20). The spread of the beams in planes perpendicular to the direction of alignment of the active layers (14, 24) is restrained by the refraction of the collimator lenses (16, 26). The transverse sections of the respective beams are rotated by substantially 90° by the beam converters (18, 28). The spread of the beams in the direction of alignment of the active layers is thus restrained and crossing of adjacent beams becomes unlikely to occur.
摘要:
In the polycrystal diamond thin film in accordance with the present invention, the average particle size is at least 1.5 μm and, in a Raman spectrum obtained by Raman spectroscopy, a peak intensity near a wave number of 1580 cm−1 has a ratio of 0.2 or less with respect to a peak intensity near a wave number of 1335 cm−1. The photocathode and electron tube in accordance with the present invention comprise the polycrystal diamond thin film as a light-absorbing layer.
摘要:
A light emitting device (10) comprises a β-FeSi2 film (2) provided on a front surface of a Si substrate (1), first electrode (3) provided on a rear-surface side of the Si substrate (1), second electrodes 4 provided on a front-surface side of the β-FeSi2 film (2). The β-FeSi2 film (2) has the conductivity different from that of Si substrate (1). Between the Si substrate (1) and β-FeSi2 film (2), a pn junction is formed. The β-FeSi2 film (2) functions as a luminescent layer. Its luminescence properties are not influenced very much by the type and purity of the substrate.
摘要:
Guard electrodes 2 which are electrically connected with a conductive portion of a cooling water passage 23 through connection lines 3 are respectively provided in the middle of a water inlet pipe 1 connected with a water inlet master pipe 10 and a water outlet pipe 6 connected with a water outlet master pipe 13 in M pieces of semiconductor laser units 4. At this time, since the guard electrode 2 has a potential equal to the conductive portion of the cooling water passage 23, the electric current hardly flows between the guard electrode 2 and the conductive portion of the cooling water passage 23. As a result, rusting is inhibited in the M pieces of semiconductor laser units 4, and a clogged piping is prevented in the cooling water passage 23.
摘要:
A laser device 1 is provided with: a solid sate laser medium made of GdVO4 or YVO4 to which Nd3+ is added, having first and second surfaces 10A, 10B facing each other; a high reflection film 12 formed on the first surface of the laser medium for reflecting light having a wavelength in a first wavelength range 880±5 nm and in a second wavelength range from 910 nm to 916 nm; a reflecting means 20 placed in a manner where an optical resonator of which the resonance Q-value for light having a wavelength in the second wavelength range is greater than the resonance Q-value for light of every wavelength in a third wavelength range from 1060 nm to 1065 nm is formed together with the high reflection film and the laser medium is positioned within the resonator; and an excitation light source 22 that outputs light having a wavelength in the first wavelength range for exciting the laser medium. Laser device 1 is formed so that light from the excitation light source is guided into the resonator in a direction different from the optical axis direction of the resonator, and enters into the laser medium. As a result, a solid state laser device having a high light-emission efficiency can be implemented.
摘要:
Ultraviolet light incident from the side of a surface layer 5 passes through the surface layer 5 to reach an optical absorption layer 4. Light which reaches the optical absorption layer 4 is absorbed within the optical absorption layer 4, and photoelectrons are generated within the optical absorption layer 4. Photoelectrons diffuse within the optical absorption layer 4, and reach the interface between the optical absorption layer 4 and the surface layer 5. Because the energy band is curved in the vicinity of the interface between the optical absorption layer 4 and surface layer 5, the energy of the photoelectrons is larger than the electron affinity in the surface layer 5, and so photoelectrons are easily ejected to the outside. Here, the optical absorption layer 4 is formed from an Al0.3Ga0.7N layer with an Mg content concentration of not less than 2×1019 cm−3 but not more than 1×1020 cm−3, so that a solar-blind type semiconductor photocathode 1 with high quantum efficiency is obtained.
摘要翻译:从表面层5侧入射的紫外光通过表层5到达光吸收层4.到达光吸收层4的光被吸收在光吸收层4内,并且在光吸收中产生光电子 光电子在光吸收层4内扩散,并到达光吸收层4和表面层5之间的界面。因为能带在光吸收层4和表面层5之间的界面附近弯曲 ,光电子的能量大于表面层5中的电子亲和力,因此光电子容易被排出到外部。 这里,光吸收层4由Mg含量浓度不小于2×10 19 cm -3但不大于1×10 20 cm -3的Al 0.3 Ga 0.7 N层形成,因此 得到具有高量子效率的太阳能型半导体光电阴极1。
摘要:
A semiconductor laser stack apparatus 1 comprises three semiconductor lasers 2a to 2c, two copper plates 3a and 3b, two lead plates 4a and 4b, a supply tube 5, a discharge tube 6, four insulating members 7a to 7d, and three heat sinks 10a to 10c. Here, the heat sink 10a to 10c is formed by a lower planar member 12 having an upper face formed with a supply water path groove portion 22, an intermediate planar member 14 formed with a plurality of water guiding holes 38, and an upper planar member 16 having a lower face formed with a discharge water path groove portion 30 which are successively stacked one upon another, whereas their contact surfaces are joined together.