公开(公告)号：US20100093585A1

公开(公告)日：2010-04-15

申请号：US12638607

申请日：2009-12-15

申请人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： C11D1/74

CPC分类号： H01L21/02074 ,  C11D1/22 ,  C11D3/30 ,  C11D3/3765 ,  C11D11/0047

摘要： A post CMP treating liquid is provided, which includes water, resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, a first surfactant having carboxylic group, a second surfactant having sulfonyl group, and tetramethyl ammonium hydroxide. The resin particles are incorporated at a concentration ranging from 0.01 to 1 wt %. The treating liquid has a pH ranging from 4 to 9, and exhibits a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.

摘要翻译： 提供后CMP处理液，其包括水，其表面上具有羧基和磺酰基，一次粒径为10至60nm的树脂颗粒，具有羧基的第一表面活性剂，具有磺酰基的第二表面活性剂 基团和四甲基氢氧化铵。 树脂颗粒以0.01至1重量％的浓度掺入。 处理液的pH为4〜9，并且以10nm / min以下的速度显示绝缘膜和导电膜的抛光速度。

公开(公告)号：US20090068841A1

公开(公告)日：2009-03-12

申请号：US12289326

申请日：2008-10-24

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

IPC分类号： H01L21/304

CPC分类号： H01L21/76808 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L27/10867

摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.

摘要翻译： 公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光 所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒 官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm和具有亲水部分的表面活性剂。

公开(公告)号：US07465668B2

公开(公告)日：2008-12-16

申请号：US11296483

申请日：2005-12-08

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： H01L21/302

CPC分类号： B24B37/042 ,  H01L21/3212 ,  H01L21/7684

摘要： A method for manufacturing a semiconductor device is provided, which includes depositing a conductive film above an insulating film formed above a semiconductor substrate and having a recess, thereby forming a treating film, polishing the treating film while feeding a first chemical solution containing abrasive particles and a second chemical solution containing an oxidizing agent over a polishing pad, the treating film being contacted with the polishing pad at a first load, and subsequent to the polishing, subjecting a surface of the treating film to a chemical-polishing by continuing the feeding of the first chemical solution over the polishing pad while suspending the feeding of the second chemical solution, the treating film being contacted with the polishing pad at a second load which is smaller than the first load.

摘要翻译： 提供了一种制造半导体器件的方法，其包括在半导体衬底上形成的绝缘膜上方形成导电膜并具有凹陷，从而形成处理膜，同时在加入含有磨料颗粒的第一化学溶液的同时抛光处理膜， 在抛光垫上含有氧化剂的第二化学溶液，所述处理膜在第一次负载下与抛光垫接触，并且在抛光之后，通过继续进行抛光来对处理膜的表面进行化学抛光 在悬浮第二化学溶液的进料的同时在抛光垫上方的第一化学溶液，处理膜以小于第一载荷的第二载荷与抛光垫接触。

公开(公告)号：US07416942B2

公开(公告)日：2008-08-26

申请号：US11708532

申请日：2007-02-21

申请人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L21/461

CPC分类号： H01L27/11543 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684 ,  H01L27/11526

摘要： A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括通过栅极绝缘膜在半导体衬底上连续地形成第一硅膜和掩模膜，在第一硅膜和掩模膜中形成多个沟槽到达半导体衬底的深度，填充多个 的沟槽，去除掩模膜以暴露存在于氧化硅膜之间的第一硅膜，选择性地生长第一硅膜上的第二硅膜，使用表现出pH为 13以下，含有磨粒和阳离子性表面活性剂，从而得到包含第一和第二硅膜的浮栅电极膜，在整个表面上形成电极间绝缘膜，并在电极间绝缘膜上形成控制栅极电极膜。

公开(公告)号：US07332104B2

公开(公告)日：2008-02-19

申请号：US11407945

申请日：2006-04-21

申请人： Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

IPC分类号： C09K13/00

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d1, the first colloidal particle being incorporated in an amount of w1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d2, the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w2 by weight, wherein d1, d2, w1 and w2 are selected to concurrently meet following conditions (A) and (B) excluding situations where d1, d2, w1 and w2 concurrently meet following conditions (C) and (D): 3≦d2/d1≦8  (A) 0.7≦w1/(w1+w2)≦0.97  (B) 3≦d2/d1≦5  (C) 0.7≦w1/(w1+w2)≦0.9.  (D)

摘要翻译： 公开了一种CMP浆料，其包含一次粒径为5nm〜30nm，平均粒径为d1的第一胶体粒子，第一胶体粒子的重量为w1，第二胶体粒子具有 一次粒径大于第一胶体粒子的粒径，平均粒径为d2，第二胶体粒子由与第一胶体粒子相同的材料形成，w 2的重量比为d 2，d2 选择w1和w2同时满足以下条件（A）和（B），不包括d1，d2，w1和w2同时符合以下条件（C）和（D）的情况：<？在线公式描述=“ 在线公式“end =”lead“？> 3 <= d2 / d1 <= 8（A）<？in-line-formula description =”In-line Formulas“end =”tail“？> line-formula description =“In-line Formulas”end =“lead”？> 0.7 <= w1 /（w1 + w2）<= 0.97（B）<？in-line-formula description =“I 3线=公式“end =”tail“？> <？in-line-formula description =”In-line Formulas“end =”lead“？> 3 <= d2 / d1 <= 5（C） line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.7 <= w1 /（w1 + w2） <= 0.9。 （D）<？in-line-formula description =“In-line Formulas”end =“tail”？>

公开(公告)号：US20080038504A1

公开(公告)日：2008-02-14

申请号：US11630915

申请日：2005-06-28

申请人： Sadanao Manabe ,  Hiroyuki Hanao ,  Takeshi Furodoi ,  Akinori Fukae ,  Toshikazu Maeda ,  Hiroyuki Yano ,  Taira Kubo ,  Yoshiharu Miyashita ,  Tomotsugu Matsui

发明人： Sadanao Manabe ,  Hiroyuki Hanao ,  Takeshi Furodoi ,  Akinori Fukae ,  Toshikazu Maeda ,  Hiroyuki Yano ,  Taira Kubo ,  Yoshiharu Miyashita ,  Tomotsugu Matsui

IPC分类号： A61F13/49 ,  A61F13/15 ,  A61F13/53 ,  A61F13/472

CPC分类号： A61F13/537 ,  Y10T156/1343 ,  Y10T156/1798 ,  Y10T428/233

摘要： [Problem to be Solved] A shuffling hand feeling and unwanted non-uniform absorption characteristics in the case of using a tow (fiber bundle) are prevented. [Solution] An absorbent body includes a fiber aggregate 21 formed by opening the tow, a super absorbent polymer 54, and a sheet covering these components; and includes the super absorbent polymer 54 bonded to the sheet 58 with an adhesive that is applied in a continuous plane to the entire surface or the substantially entire surface of at least the portion to be provided with the super absorbent polymer 54 in this sheet 58.

摘要翻译： [待解决的问题]防止在使用丝束（纤维束）的情况下的洗牌手感和不希望的不均匀的吸收特性。 [解决方案]吸收体包括通过打开丝束形成的纤维聚集体21，高吸收性聚合物54和覆盖这些组分的片材; 并且包括用在该片材58中至少要设置有超吸收性聚合物54的部分的整个表面或基本上整个表面连续施加的粘合剂粘合到片材58上的高吸水性聚合物54。

公开(公告)号：US07307023B2

公开(公告)日：2007-12-11

申请号：US11540707

申请日：2006-10-02

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Susumu Yamamoto

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Susumu Yamamoto

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  B24B37/015 ,  B24B49/16 ,  B24B57/02 ,  C09G1/02

摘要： A method for polishing a Cu film comprises contacting a Cu film formed above a semiconductor substrate with a polishing pad attached to a turntable, and supplying a first chemical liquid which promotes the polishing of the Cu film and a second chemical liquid which contains a surfactant, to the polishing pad while the turntable being rotated, thereby polishing the Cu film, while monitoring at least one of a table current of the turntable and a surface temperature of the polishing pad to detect a change in at least one of the table current of the turntable and the surface temperature of the polishing pad. The supply of the second chemical liquid is controlled in conformity with the change.

公开(公告)号：US20070129502A1

公开(公告)日：2007-06-07

申请号：US10586642

申请日：2005-01-26

申请人： Masanao Kawabe ,  Hiroyuki Yano ,  Yasuji Shichijo ,  Kouhei Tomari ,  Isamu Akiba

发明人： Masanao Kawabe ,  Hiroyuki Yano ,  Yasuji Shichijo ,  Kouhei Tomari ,  Isamu Akiba

IPC分类号： C08L71/12 ,  C08K3/34

CPC分类号： C08L51/003 ,  B32B15/08 ,  B32B17/04 ,  B32B27/18 ,  B32B27/26 ,  B32B27/28 ,  B32B27/285 ,  B32B27/302 ,  B32B2307/306 ,  B32B2307/3065 ,  B32B2457/08 ,  C08F257/02 ,  C08F283/06 ,  C08F290/06 ,  C08F290/062 ,  C08K3/013 ,  C08K5/0066 ,  C08K5/14 ,  C08K5/34924 ,  C08L53/00 ,  C08L71/12 ,  C09D153/00 ,  H05K1/0353 ,  H05K3/4626 ,  Y10T428/12569 ,  C08L2666/02 ,  C08L2666/14 ,  C08L2666/04

摘要： Provided is curable resin composition which gives a cured article excellent in chemical resistance, dielectric properties, low water-absorption, heat resistance, flame retardance, and mechanical properties and which is usable in applications such as dielectric materials, insulating materials, heat-resistant materials, and structural materials. The curable resin composition includes a component (A) which is a polyphenylene ether oligomer having a number-average molecular weight of 700 to 4,000 and having a vinyl group at both end and a component (B) which is a solvent-soluble polyfunctional vinylaromatic copolymer which has structural units derived from monomers including a divinylaromatic compound (a) and an ethylvinylaromatic compound (b) and in which the content of repeating units derived from the divinylaromatic compound (a) is 20 mol % or higher, the ratio of the amount (wt. %) of the component (A) to that (wt. %) of the component (B) being (20 to 98):(2 to 80). The composition can further contain a layered silicate, a halogenated flame retardant, etc.

摘要翻译： 本发明提供了耐化学性，介电性，低吸水性，耐热性，阻燃性和机械性能优异的固化物的固化性树脂组合物，其可用于介电材料，绝缘材料，耐热材料 ，和结构材料。 作为固化性树脂组合物，可列举数均分子量为700〜4000的聚苯醚低聚物和两末端具有乙烯基的成分（A）和作为溶剂可溶性多官能乙烯基芳香族共聚物的成分（B） 其具有衍生自包括二乙烯基芳族化合物（a）和乙烯基乙烯基芳族化合物（b）的单体的结构单元，并且其中衍生自二乙烯基芳族化合物（a）的重复单元的含量为20摩尔％以上， （A）成分（B）的重量％（重量％）为（20〜98）：（2〜80）。 组合物还可以含有层状硅酸盐，卤化阻燃剂等

公开(公告)号：US20070125890A1

公开(公告)日：2007-06-07

申请号：US11700185

申请日：2007-01-31

申请人： Yusho Nakamoto ,  Toshihiko Tsunoda ,  Keiko Ono ,  Hiroyuki Yano ,  Yoshikazu Yazaki ,  Huijian Jiang ,  Frank Lawson ,  Peter Uhlherr

发明人： Yusho Nakamoto ,  Toshihiko Tsunoda ,  Keiko Ono ,  Hiroyuki Yano ,  Yoshikazu Yazaki ,  Huijian Jiang ,  Frank Lawson ,  Peter Uhlherr

IPC分类号： B02C23/00

CPC分类号： C08H8/00 ,  B07B9/00 ,  C08H99/00 ,  C08L61/00 ,  C08L61/06 ,  C08L97/00 ,  C08L97/02 ,  C08L2205/02 ,  C08L2205/03 ,  C08L2666/02 ,  C09J161/00 ,  C09J161/06 ,  C09J197/00 ,  C09J197/02 ,  C09J199/00 ,  C08L2666/26

摘要： A method of producing powder with a high tannin content includes pulverizing a tannin-containing plant such as bark of radiata pine (Pinus radiata) and classifying the pulverized material into fine particles having a desired particle size, for example, fine particles having a particle diameter of 100 to 1,000 μm or less. A powder with a high tannin content is produced by such a method. The thus obtained powder with a high tannin content exhibits excellent characteristics when used as an adhesive, a binder, etc. for wood materials.

摘要翻译： 具有高单宁含量的粉末的方法包括粉碎含有单宁的松树（松散松）的单宁植物，并将粉碎物质分级为具有所需粒度的细颗粒，例如具有粒径的细颗粒 为100〜1,000μm以下。 通过这种方法生产具有高单宁含量的粉末。 如此获得的具有高单宁含量的粉末当用作木材的粘合剂，粘合剂等时表现出优异的特性。

公开(公告)号：US20070111433A1

公开(公告)日：2007-05-17

申请号：US11594726

申请日：2006-11-09

申请人： Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Yukiteru Matsui ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Yukiteru Matsui ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/8242

CPC分类号： H01L27/105 ,  H01L27/11526 ,  H01L27/11543 ,  H01L29/40114 ,  H01L29/66825

摘要： A method for manufacturing a semiconductor device comprises forming a first silicon layer above a semiconductor substrate; forming a stopper layer on said first silicon layer; partially removing said stopper layer and said first silicon layer above said semiconductor substrate to form a plurality of trenches; forming an insulating layer on said stopper layer with inside of said trenches; partially removing said insulating layer to expose said stopper layer; after partially removing said insulating layer, removing said stopper layer to expose said first silicon layer; selectively growing second silicon layer on said exposed first silicon layer; nonselectively growing a third silicon layer on said second silicon layer; and polishing at least a surface of said third silicon layer by performing chemical mechanical polishing.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成第一硅层; 在所述第一硅层上形成阻挡层; 部分地去除所述半导体衬底之上的所述阻挡层和所述第一硅层以形成多个沟槽; 在所述沟槽的内部在所述阻挡层上形成绝缘层; 部分地去除所述绝缘层以暴露所述阻挡层; 在部分地去除所述绝缘层之后，去除所述阻挡层以露出所述第一硅层; 在所述暴露的第一硅层上选择性地生长第二硅层; 在所述第二硅层上非选择地生长第三硅层; 以及通过进行化学机械抛光来抛光所述第三硅层的至少一个表面。