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公开(公告)号：US07435635B2
公开(公告)日：2008-10-14
申请号：US11105404
申请日：2005-04-14
IPC分类号： H01L21/336
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/02675 , H01L21/02686 , H01L21/2026 , H01L31/208 , Y02E10/50 , Y02P70/521 , Y10T29/41
摘要： A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atoms·cm−3 or lower, preferably 1×1019 atoms·cm−3 or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.
摘要翻译： 一种半导体材料及其形成方法，所述半导体材料通过以下方法制备，所述方法包括以5×10 19原子的浓度熔化含有碳，氮和氧的非晶半导体膜。 通过照射等效于激光束的激光束或高强度光，可以通过照射激光束或低强度光 激光束到所述非晶半导体膜，然后使这样熔融的非晶硅膜重结晶。 本发明提供具有优异的再现性的高迁移率的薄膜半导体，所述半导体材料可用于制造薄膜晶体管，例如改善器件特性的薄膜晶体管。
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62.发明授权公开(公告)号：US06881615B2
公开(公告)日：2005-04-19
申请号：US09978696
申请日：2001-10-18
IPC分类号： H01L21/20 , H01L31/20 , H01L21/336
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/02675 , H01L21/02686 , H01L21/2026 , H01L31/208 , Y02E10/50 , Y02P70/521 , Y10T29/41
摘要： A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atoms·cm−3 or lower, preferably 1×1019 atoms·cm−3 or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.
摘要翻译： 一种半导体材料及其形成方法，所述半导体材料通过以下方法制备，所述方法包括以5×10 19原子的浓度熔化含有碳，氮和氧的非晶半导体膜。 通过照射等效于激光束的激光束或高强度光，可以通过照射激光束或低强度光 激光束到所述非晶半导体膜，然后使这样熔融的非晶硅膜重结晶。 本发明提供具有优异的再现性的高迁移率的薄膜半导体，所述半导体材料可用于制造薄膜晶体管，例如改善器件特性的薄膜晶体管。
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公开(公告)号：US06358784B1
公开(公告)日：2002-03-19
申请号：US09145543
申请日：1998-09-02
IPC分类号： H01L21331
CPC分类号： H01L29/66757 , B60R25/066 , H01L21/223 , H01L27/14692 , Y10T29/41
摘要： A process for laser processing an article, which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof, said article being made from a material selected from a semiconductor, a metal, an insulator, and a combination thereof; and irradiating a laser beam to the article in a reactive gas atmosphere containing said impurity, thereby allowing the impurity to physically or chemically diffuse into, combine with, or intrude into said article. The present invention also provides an apparatus for use in a laser processing process, characterized by that it is provided with an internal sample holder and a device which functions as a heating means of the sample, a window made of a material sufficiently transparent to transmit a laser beam, a chamber comprising a vacuum evacuation device and a device for introducing a reactive gas containing an impurity element, a laser apparatus operating in a pulsed mode to irradiate a laser beam to said chamber, and a means to move said chamber synchronously with the laser irradiation.
摘要翻译： 一种激光加工制品的方法，包括：将待掺杂杂质的预期制品加热到不高于其熔点的温度，所述制品由选自半导体，金属，绝缘体， 及其组合; 并在包含所述杂质的反应性气体气氛中向所述制品照射激光束，从而使所述杂质物理或化学扩散到所述制品中，与之结合或侵入所述制品。 本发明还提供了一种在激光加工工艺中使用的装置，其特征在于，其具有内部样品保持器和用作样品加热装置的装置，由足够透明的材料制成的窗口， 激光束，包括真空抽出装置的腔室和用于引入含有杂质元素的反应性气体的装置，以脉冲模式操作以将激光束照射到所述腔室的激光装置，以及与所述腔室同步地移动所述腔室的装置 激光照射。
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公开(公告)号：US5879969A
公开(公告)日：1999-03-09
申请号：US841638
申请日：1997-04-30
IPC分类号： G02F1/1362 , H01L21/336 , H01L21/60 , H01L21/77 , H01L27/12 , H01L29/49 , H01L29/786 , H01L21/00
CPC分类号： H01L29/66757 , H01L21/76897 , H01L27/124 , H01L29/4908 , H01L29/78651 , H01L29/78666 , H01L29/78675 , G02F1/13454 , G02F2001/136245
摘要： In a thin-film insulated gate type field effect transistor having a metal gate in which the surface of the gate electrode is subjected to anodic oxidation, a silicon nitride film is provided so as to be interposed between the gate electrode and the gate insulating film to prevent invasion of movable ions into a channel, and also to prevent the breakdown of the gate insulating film due to a potential difference between the gate electrode and the channel region. By coating a specific portion of the gate electrode with metal material such as chrome or the like for the anodic oxidation, and then removing only the metal material such as chrome or the like together with the anodic oxide of the metal material such as chrome or the like, an exposed portion of metal gate (e.g. aluminum) is formed, and an upper wiring is connected to the exposed portion. Further, an aluminum oxide or silicon nitride is formed as an etching stopper between the gate electrode and the gate insulating film or between the substrate and the layer on the substrate, so that the over-etching can be prevented and the flatness of the element can be improved. In addition, a contact is formed in no consideration of the concept "contact hole".
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65.发明授权Process for fabricating semiconductor and process for fabricating semiconductor device 失效用于制造半导体的工艺和用于制造半导体器件的工艺
公开(公告)号：US5843225A
公开(公告)日：1998-12-01
申请号：US479720
申请日：1995-06-07
IPC分类号： H01L21/20 , H01L21/336 , H01L27/12 , H01L29/786 , C30B1/10
CPC分类号： H01L21/2022 , H01L21/2026 , H01L27/12 , H01L29/66757 , H01L29/78654 , H01L29/78675
摘要： A process for fabricating a semiconductor at a lower crystallization temperature and yet at a shorter period of time, which comprises forming an insulator coating on a substrate; exposing said insulator coating to a plasma; forming an amorphous silicon film on said insulator coating after its exposure to said plasma; and heat treating said silicon film in the temperature range of from 400.degree. to 650.degree. C. or at a temperature not higher than the glass transition temperature of the substrate. The nucleation sites are controlled by selectively exposing the amorphous silicon film to a plasma or by selectively applying a substance containing elements having a catalytic effect thereto. A process for fabricating a thin film transistor using the same is also disclosed.
摘要翻译： 一种制造半导体的方法，该半导体在较低的结晶温度下并且在较短的时间内，其包括在基片上形成绝缘体涂层; 将所述绝缘体涂层暴露于等离子体; 在暴露于所述等离子体之后，在所述绝缘体涂层上形成非晶硅膜; 在400〜650℃的温度或不高于基板的玻璃化转变温度的温度下对所述硅膜进行热处理。 通过选择性地将非晶硅膜暴露于等离子体或通过选择性地施加含有其催化作用的元素的物质来控制成核位点。 还公开了使用其制造薄膜晶体管的工艺。
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公开(公告)号：US5773327A
公开(公告)日：1998-06-30
申请号：US728506
申请日：1996-10-09
IPC分类号： H01L29/78 , H01L21/00 , H01L21/20 , H01L21/324 , H01L21/336 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： H01L21/84 , H01L27/12 , H01L29/66757 , H01L29/78654 , H01L29/78675 , H01L21/2022
摘要： A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island amorphous silicon film, injecting an impurity using the gate electrode as a mask, forming a coating film containing at least one of nickel, iron, cobalt, platinum and palladium so that it adheres to parts of the impurity regions, and annealing it at a temperature lower than the crystallization temperature of pure amorphous silicon to advance the crystallization starting therefrom and to crystallize the impurity regions and channel forming region.
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公开(公告)号：US5753542A
公开(公告)日：1998-05-19
申请号：US396780
申请日：1995-03-01
IPC分类号： H01L21/20 , H01L31/20 , H01L21/268
CPC分类号： H01L21/2026 , H01L31/208 , Y02E10/50 , Y02P70/521 , Y10T29/41
摘要： A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5.times.10.sup.19 atoms.cm.sup.-3 or lower, preferably 1.times.10.sup.19 atoms.cm.sup.-3 or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.
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公开(公告)号：US5583369A
公开(公告)日：1996-12-10
申请号：US614849
申请日：1996-03-12
IPC分类号： G02F1/13 , G02F1/136 , G09F9/35 , H01L21/02 , H01L21/20 , H01L21/28 , H01L21/324 , H01L21/336 , H01L21/36 , H01L21/70 , H01L21/77 , H01L21/84 , H01L27/00 , H01L27/12 , H01L27/15 , H01L29/78 , H01L29/786 , H01L23/58
CPC分类号： H01L21/2026 , H01L27/1218 , H01L27/1222 , H01L27/1251 , H01L27/1274 , H01L27/1281 , H01L29/66757 , H01L29/78603 , H01L29/78636 , H01L29/42384 , H01L29/78675 , H01L2924/0002
摘要： Thin-film semiconductor devices such as TFTs (thin-film transistors) and methods of fabricating the same. TFTs are formed on an insulating substrate. First, a substantially amorphous semiconductor coating is formed on the substrate. A protective coating transparent to laser radiation is formed on the semiconductor coating. The laminate is irradiated with laser radiation to improve the crystallinity of the semiconductor coating. Then, the protective coating is removed to expose the surface of the semiconductor coating. A coating for forming a gate-insulating film is formed. Subsequently, gate electrodes are formed. Another method relates to fabrication of semiconductor devices such as TFTs on an insulating substrate. After forming a first coating consisting mainly of aluminum nitride, a second coating consisting principally of silicon oxide is formed. Semiconductor devices such as TFTs or semiconductor circuits are built on the second coating serving as a base layer.
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69.发明授权公开(公告)号：US07456427B2
公开(公告)日：2008-11-25
申请号：US10939969
申请日：2004-09-14
IPC分类号： H01L29/04
CPC分类号： H01L27/127 , G02F1/13454 , G02F2001/136245 , H01L21/76897 , H01L27/1214 , H01L29/04 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78651 , H01L29/78666 , H01L29/78675
摘要： An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween.
摘要翻译： 制造LDD结构以具有期望的高度与栅电极的宽度的纵横比。 首先将栅电极沉积在半导体衬底上，随后以栅电极作为掩模进行离子注入，以形成一对杂质区。 然后对栅电极进行阳极氧化，形成包围电极的氧化膜。 以氧化物膜为掩模，通过离子注入形成高度掺杂的区域，以便在高掺杂区域和位于它们之间的沟道区域之间限定轻掺杂区域。
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70.发明申请公开(公告)号：US20050098782A1
公开(公告)日：2005-05-12
申请号：US10939969
申请日：2004-09-14
IPC分类号： H01L29/78 , G02F1/1362 , H01L21/265 , H01L21/336 , H01L21/60 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/49 , H01L29/786 , H01L29/10 , H01L31/036 , H01L31/0376
CPC分类号： H01L27/127 , G02F1/13454 , G02F2001/136245 , H01L21/76897 , H01L27/1214 , H01L29/04 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78651 , H01L29/78666 , H01L29/78675
摘要： An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween.
摘要翻译： 制造LDD结构以具有期望的高度与栅电极的宽度的纵横比。 首先将栅电极沉积在半导体衬底上，随后以栅电极作为掩模进行离子注入，以形成一对杂质区。 然后对栅电极进行阳极氧化，形成包围电极的氧化膜。 以氧化物膜为掩模，通过离子注入形成高度掺杂的区域，以便在高掺杂区域和位于它们之间的沟道区域之间限定轻掺杂区域。
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