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    Methods for preparing a bonding surface of a semiconductor wafer
    62.
    发明申请
    Methods for preparing a bonding surface of a semiconductor wafer 有权
    制备半导体晶片的接合表面的方法

    公开(公告)号：US20060273068A1

    公开(公告)日：2006-12-07

    申请号：US11472665

    申请日：2006-06-21

    申请人： Corinne Maunand Tussot ,  Christophe Maleville ,  Hubert Moriceau ,  Alain Soubie

    发明人： Corinne Maunand Tussot ,  Christophe Maleville ,  Hubert Moriceau ,  Alain Soubie

    IPC分类号： B44C1/22

    CPC分类号： H01L21/76254

    摘要： A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface with a solution of NH4OH/H2O2 at treatment parameters sufficient to etch about 10 Å to about 120 Å from the wafer surface, followed by treating the etched surface with hydrochloric acid species at a temperature below about 50° C. for a duration of less than about 10 minutes to remove isolated particles from the oxidized surface. This method cleans the wafer surface without increasing roughness or creating rough patches thereon, and thus provides a cleaned surface capable of providing an increased bonding energy between the first and second wafers when those surfaces are bonded together. This cleaning process is advantageously used in a thin layer removal process to fabricate a semiconductor on insulator structure.

    摘要翻译： 一种用于制备用于与第二晶片接合的第一晶片的氧化表面的方法。 该方法包括在处理参数下处理含有NH 4 OH / H 2 O 2 O 2的溶液的氧化表面，所述处理参数足以蚀刻至约 约120埃，然后在低于约50℃的温度下用盐酸物质处理蚀刻表面，持续时间小于约10分钟以从氧化表面除去分离的颗粒。 该方法清洁晶片表面而不会增加粗糙度或在其上产生粗糙的贴片，从而提供了当这些表面粘接在一起时能够在第一和第二晶片之间提供增加的结合能的清洁表面。 该清洁方法有利地用于薄层去除工艺以制造绝缘体上半导体结构。

    Method for producing a stacked structure
    65.
    发明申请
    Method for producing a stacked structure 有权
    叠层结构体的制造方法

    公开(公告)号：US20050101095A1

    公开(公告)日：2005-05-12

    申请号：US10450528

    申请日：2001-12-27

    申请人： Franck Fournel ,  Hubert Moriceau ,  Marc Zussy ,  Noel Magnea

    发明人： Franck Fournel ,  Hubert Moriceau ,  Marc Zussy ,  Noel Magnea

    IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/18 ,  H01L21/762 ,  H01L21/336

    CPC分类号： H01L21/187 ,  H01L21/76251

    摘要： Method for producing a stacked structure by obtaining at least two crystalline parts by detaching them from a same initial structure, each crystalline part having one face created by the detachment having a tilt angle with a reference crystalline plane of the initial structure. Structures are formed from the crystalline parts, each structure having a face to be assembled that has a controlled tilt angle in relation to the tilt angle of the created face of the corresponding crystalline part. The structures are assembled while controlling their relative positions, rotating in an interface plane, in relation to relative positions of respective crystalline parts within the initial structure, to obtain a controlled resulting tilt angle at the interface between the structures. The method may find application particularly in microelectronics, optics, and optoelectronics.

    摘要翻译： 通过从相同的初始结构中分离出至少两个结晶部分来制造层叠结构的方法，每个结晶部分具有通过与初始结构的参考晶面具有倾斜角度的分离产生的一个面。 结构由结晶部分形成，每个结构具有相对于相应结晶部分的产生面的倾斜角具有受控倾斜角的待组装面。 结构被组装，同时控制它们在界面平面中相对于初始结构内的各结晶部分的相对位置旋转的相对位置，以在结构之间的界面处获得受控的所得到的倾斜角。 该方法可以特别在微电子学，光学和光电子学中得到应用。

    Method for transferring a thin film comprising a step of generating inclusions
    68.
    发明授权
    Method for transferring a thin film comprising a step of generating inclusions 有权
    用于转印薄膜的方法，包括产生夹杂物的步骤

    公开(公告)号：US06756286B1

    公开(公告)日：2004-06-29

    申请号：US09380322

    申请日：1999-11-22

    申请人： Hubert Moriceau ,  Michel Bruel ,  Bernard Aspar ,  Christophe Maleville

    发明人： Hubert Moriceau ,  Michel Bruel ,  Bernard Aspar ,  Christophe Maleville

    IPC分类号： H01L21265

    CPC分类号： H01L21/76254 ,  H01L21/26506 ,  Y10S438/977

    摘要： A process for transfer of at least one thin film of solid material delimited in an initial substrate. The process includes a step in which a layer of inclusions is formed in the initial substrate at a depth corresponding to the required thickness of the thin film. These inclusions are designed to form traps for gaseous compounds which subsequently are implanted. In a subsequent step gaseous compounds are implanted in a manner to convey the gaseous compounds into the layer of inclusions. The dose of implanted gaseous compounds is made sufficient to cause the formation of micro-cavities to form a fracture plane along which the thin film can be separated from the remainder of the substrate.

    摘要翻译： 用于转移在初始底物中限定的至少一种固体材料薄膜的方法。 该方法包括一个步骤，其中在初始衬底中形成一层夹杂物，其深度对应于薄膜的所需厚度。 这些夹杂物被设计成形成随后被植入的气态化合物的阱。 在随后的步骤中，以将气态化合物输送到夹杂层中的方式注入气态化合物。 植入的气态化合物的剂量足以引起微孔的形成以形成断裂平面，沿着该断裂面，薄膜可以与基底的其余部分分离。