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    STRUCTURED BOTTOM ELECTRODE FOR MTJ CONTAINING DEVICES
    61.
    发明申请
    STRUCTURED BOTTOM ELECTRODE FOR MTJ CONTAINING DEVICES 有权

    公开(公告)号：US20210119121A1

    公开(公告)日：2021-04-22

    申请号：US17138323

    申请日：2020-12-30

    Applicant: International Business Machines Corporation

    Inventor： Nathan P. Marchack ,  Bruce B. Doris ,  Pouya Hashemi

    IPC: H01L43/12 ,  H01L43/02 ,  H01L27/22

    Abstract: A bottom electrode structure for a magnetic tunnel junction (MTJ) containing device is provided. The bottom electrode structure includes a mesa portion that is laterally surrounded by a recessed region. The recessed region of the bottom electrode structure is laterally adjacent to a dielectric material, and a MTJ pillar is located on the mesa portion of the bottom electrode structure. Such a configuration shields the recessed region from impinging ions thus preventing deposition of resputtered conductive metal particles from the bottom electrode onto the MTJ pillar.

    Magnetic random access memory (MRAM) structure with small bottom electrode
    62.
    发明授权
    Magnetic random access memory (MRAM) structure with small bottom electrode 有权

    公开(公告)号：US10957738B2

    公开(公告)日：2021-03-23

    申请号：US16374120

    申请日：2019-04-03

    Applicant: International Business Machines Corporation

    Inventor： Pouya Hashemi ,  Bruce B. Doris ,  Chandrasekharan Kothandaraman ,  Nathan P. Marchack

    IPC: H01L23/528 ,  H01L27/22 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08

    Abstract: A semiconductor structure and fabrication method of forming a semiconductor structure. The structure is a MRAM element having a first conductive electrode embedded in a first interconnect dielectric material layer upon which a multi-layered magnetic tunnel junction (MTJ) memory element is formed in a magnetoresistive random access memory (MRAM) device area. The first conductive electrode includes a first end having a top surface of a first surface area and a second end having a bottom surface of a second surface area, the first surface area being smaller than the second surface area. The second end of the bottom electrode includes a barrier liner material including a metal fill material, and the first end of the bottom electrode is a pillar structure formed as a result of an etchback process in which the metal barrier liner is recessed relative to the metal fill material.

    Diamond-Like Carbon Hardmask for MRAM
    67.
    发明申请
    Diamond-Like Carbon Hardmask for MRAM 审中-公开

    公开(公告)号：US20200091418A1

    公开(公告)日：2020-03-19

    申请号：US16131989

    申请日：2018-09-14

    Applicant: International Business Machines Corporation

    Inventor： Anthony Annunziata ,  Nathan P. Marchack ,  Eugene O'Sullivan ,  Chandrasekharan Kothandaraman

    IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L21/02 ,  H01L21/033

    Abstract: Techniques for MRAM patterning using a diamond-like carbon hardmask are provided. In one aspect, a method of forming an MRAM device includes: forming an MRAM stack on a substrate; depositing a metal hardmask layer on the MRAM stack; depositing a diamond-like carbon layer on the metal hardmask layer; forming a patterned resist on the diamond-like carbon layer; patterning the diamond-like carbon layer using the patterned resist to form a diamond-like carbon pillar; patterning the metal hardmask layer using the diamond-like carbon pillar to form a patterned metal hardmask; and patterning the MRAM stack into an MRAM pillar using the patterned metal hardmask to form the MRAM device. An MRAM device is also provided.

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