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    AIRGAP-CONTAINING INTERCONNECT STRUCTURE WITH PATTERNABLE LOW-K MATERIAL AND METHOD OF FABRICATING
    61.
    发明申请
    AIRGAP-CONTAINING INTERCONNECT STRUCTURE WITH PATTERNABLE LOW-K MATERIAL AND METHOD OF FABRICATING 有权
    含有可降解低K材料的空气包含互连结构及其制备方法

    公开(公告)号：US20130207272A1

    公开(公告)日：2013-08-15

    申请号：US13791502

    申请日：2013-03-08

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Qinghuang Lin

    IPC: H01L23/532

    CPC classification number: H01L23/532 ,  H01L21/76808 ,  H01L21/7682 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    Abstract: An interconnect structure is provided that includes at least one patterned and cured low-k dielectric material located on a surface of a patterned inorganic antireflective coating that is located atop a substrate. The inorganic antireflective coating comprises atoms of M, C and H wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La. The at least one cured and patterned low-k dielectric material and the patterned inorganic antireflective coating have conductively filled regions embedded therein and the at least one cured and patterned low-k dielectric material has at least one airgap located adjacent, but not directly in contact with the conductively filled regions.

    Abstract translation: 提供了一种互连结构，其包括位于图案化无机抗反射涂层的位于衬底顶部的表面上的至少一个图案化和固化的低k电介质材料。 无机抗反射涂层包含M，C和H的原子，其中M是Si，Ge，B，Sn，Fe，Ta，Ti，Ni，Hf和La中的至少一种。至少一种固化和图案化的低k电介质 材料和图案化的无机抗反射涂层具有嵌入其中的导电填充区域，并且所述至少一个固化和图案化的低k电介质材料具有邻近但不直接与导电填充区域接触的至少一个气隙。

    NEUROSTIMULATION THERAPY
    62.
    发明申请
    NEUROSTIMULATION THERAPY 有权

    公开(公告)号：US20220319661A1

    公开(公告)日：2022-10-06

    申请号：US17218744

    申请日：2021-03-31

    Applicant: International Business Machines Corporation

    Inventor： Qinghuang Lin ,  Pritish Ranjan Parida ,  Mohamed Ghalwash ,  Daby Mousse Sow

    IPC: G16H20/30 ,  G16H50/50 ,  G16H50/70 ,  G16H40/40 ,  A61N1/36 ,  A61N1/02

    Abstract: Techniques regarding neuromodulation are provided. For example, one or more embodiments described herein can comprise a system, which can comprise a memory that can store computer executable components. The system can also comprise a processor, operably coupled to the memory, and that can execute the computer executable components stored in the memory. The computer executable components can include a mapping component that can generate a stimulus map by mapping a stimulus parameter to a response from an entity to application of a neuromodulating stimulus, with the first neuromodulating stimulus being applied to the entity based on the first stimulus parameter, to therapeutically cause or prevent a sensation.

    Magnetic random access memory with permanent photo-patternable low-K dielectric
    68.
    发明授权
    Magnetic random access memory with permanent photo-patternable low-K dielectric 有权

    公开(公告)号：US10665636B2

    公开(公告)日：2020-05-26

    申请号：US16671976

    申请日：2019-11-01

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Qinghuang Lin

    IPC: H01L27/22 ,  H01L43/12 ,  G11C11/16 ,  H01L43/02 ,  H01L21/768 ,  H01L43/08

    Abstract: A method of forming a device that includes encapsulating a magnetic resistive access memory (MRAM) stack with a first patternable low-k dielectric material that is patterned by an exposure to produce a via pattern that extends to circuitry to logic devices. The via pattern is developed forming a via opening. The method further includes forming a second patternable low-k dielectric material over first patternable low-k dielectric material and filling the via opening. The second patternable low-k dielectric material is patterned by a light exposure to produce a first line pattern to the MRAM stack and a second line pattern to the via opening. The first line pattern and the second line pattern are developed to form trench openings. Thereafter, electrically conductive material is formed in the trench openings and the via opening.

    MAGNETIC RANDOM ACCESS MEMORY WITH PERMANENT PHOTO-PATTERNABLE LOW-K DIELECTRIC
    70.
    发明申请
    MAGNETIC RANDOM ACCESS MEMORY WITH PERMANENT PHOTO-PATTERNABLE LOW-K DIELECTRIC 审中-公开

    公开(公告)号：US20200066793A1

    公开(公告)日：2020-02-27

    申请号：US16671990

    申请日：2019-11-01

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Qinghuang Lin

    IPC: H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L21/768 ,  G11C11/16 ,  H01L43/12

    Abstract: A method of forming a device that includes encapsulating a magnetic resistive access memory (MRAM) stack with a first patternable low-k dielectric material that is patterned by an exposure to produce a via pattern that extends to circuitry to logic devices. The via pattern is developed forming a via opening. The method further includes forming a second patternable low-k dielectric material over first patternable low-k dielectric material and filling the via opening. The second patternable low-k dielectric material is patterned by a light exposure to produce a first line pattern to the MRAM stack and a second line pattern to the via opening. The first line pattern and the second line pattern are developed to form trench openings. Thereafter, electrically conductive material is formed in the trench openings and the via opening.

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