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149 条记录 (耗时 0.029 秒)

    Magnetoresistive element
    61.
    发明授权
    Magnetoresistive element 失效
    磁阻元件

    公开(公告)号：US5962905A

    公开(公告)日：1999-10-05

    申请号：US931419

    申请日：1997-09-16

    申请人： Yuzo Kamiguchi ,  Masashi Sahashi

    发明人： Yuzo Kamiguchi ,  Masashi Sahashi

    IPC分类号： H01L29/66 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10 ,  H01L43/00

    CPC分类号： H01L29/66984 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetoresistive element comprises an n-type emitter layer, a p-type base layer, and an n-type collector layer, the three layers being so arranged as to form a pn-junction with each other, an emitter ferromagnetic layer formed in contact with the n-type emitter layer, a base ferromagnetic layer formed in contact with the p-type base layer, a power source for applying, by way of the emitter ferromagnetic layer, a forward bias voltage between the n-type emitter layer and the p-type base layer, a power source for applying a backward bias voltage to the n-type collector layer and the p-type base layer and a power source for applying, by way of the base ferromagnetic layer, a bias voltage so as to inject minority carriers into the p-type base layer.

    摘要翻译： 磁阻元件包括n型发射极层，p型基极层和n型集电极层，所述三个层被布置为彼此形成pn结，发射铁磁层形成为接触 与n型发射极层，形成为与p型基极层接触的基极铁磁层，用于通过发射极铁磁层施加在n型发射极层和 p型基极层，用于向n型集电极层和p型基极层施加反向偏置电压的电源以及通过基极铁磁层施加偏置电压的电源，以便 将少数载流子注入p型基底层。

    Super-magnetostrictive alloy
    63.
    发明授权
    Super-magnetostrictive alloy 失效
    超磁致伸缩合金

    公开(公告)号：US5223046A

    公开(公告)日：1993-06-29

    申请号：US845827

    申请日：1992-03-06

    申请人： Tadahiko Kobayashi ,  Yoichi Tokai ,  Masashi Sahashi

    发明人： Tadahiko Kobayashi ,  Yoichi Tokai ,  Masashi Sahashi

    IPC分类号： H01L41/20

    CPC分类号： H01L41/20

    摘要： A super-magnetostrictive alloy has a high coefficient of magnetostriction and satisfactory toughness. The first type of the super-magnetostrictive alloy has a composition whose atomic ratio is expressed by (Tb.sub.x Dy.sub.1-x (Fe.sub.1-y Mn.sub.y).sub.z, where 0.35.ltoreq.x.ltoreq.0.9, 0.001.ltoreq.y.ltoreq.0.6, and 1.4.ltoreq.z.ltoreq.2.1. The second type of the super-magnetostrictive alloy has a composition whose atomic ratio is expressed by (Tb.sub.x Dy.sub.1-x (Fe.sub.1-y-w Mn.sub.y T.sub.w).sub.z, where 0.2.ltoreq.x.ltoreq.0.9, 0.05.ltoreq.y.ltoreq.0.4, 0.05.ltoreq.w.ltoreq.0.1, and 1.4.ltoreq.z.ltoreq.2.1, and where T is at least one of Co and Ni. The super-magnetostrictive alloys of both types have a Laves-type intermetallic compound phase as a main phase, and a rare earth metal phase is located between the portions having the main phase.

    摘要翻译： 超磁致伸缩合金的磁致伸缩系数高，韧性好。 第一种类型的超磁致伸缩合金具有其原子比由（TbxDy1-x（Fe1-yMny）z）表示的组成，其中0.35

    Super-magnetostrictive alloy
    65.
    发明授权
    Super-magnetostrictive alloy 失效
    超磁性合金

    公开(公告)号：US5110376A

    公开(公告)日：1992-05-05

    申请号：US671074

    申请日：1991-03-18

    申请人： Tadahiko Kobayashi ,  Yoichi Tokai ,  Masashi Sahashi

    发明人： Tadahiko Kobayashi ,  Yoichi Tokai ,  Masashi Sahashi

    IPC分类号： H01L41/20

    CPC分类号： H01L41/20

    摘要： A super-magnetostrictive alloy has a high coefficient of magnetostriction and satisfactory toughness. The first type of the super-magnetostrictive alloy has a composition whose atomic ratio is expressed by (Tb.sub.x Dy.sub.1-x (Fe.sub.1-y Mn.sub.y).sub.z, where 0.35.ltoreq.x.ltoreq.0.9, 0.001.ltoreq.y.ltoreq.0.6, and 1.4.ltoreq.z.ltoreq.2.1. The second type of the supermagnetostrictive alloy has a composition whose atomic ratio is expressed by (Tb.sub.x Dy.sub.1-x (Fe.sub.1-y-w Mn.sub.y T.sub.w).sub.z, where 0.2.ltoreq.x.ltoreq.0.9, 0.05.ltoreq.y.ltoreq.0.4, 0.05.ltoreq.w.ltoreq.0.1, and 1.4.ltoreq.z.ltoreq.2.1, and where T is at least one of Co and Ni. The super-magnetostrictive alloys of both types have a Laves-type intermetallic compound phase as a main phase, and a rare earth metal phase is located between the portions having the main phase.

    Planar inductor
    66.
    发明授权
    Planar inductor 失效
    平面电感

    公开(公告)号：US4959631A

    公开(公告)日：1990-09-25

    申请号：US250401

    申请日：1988-09-28

    申请人： Michio Hasegawa ,  Masashi Sahashi

    发明人： Michio Hasegawa ,  Masashi Sahashi

    IPC分类号： H01F17/00

    CPC分类号： H01F17/0006

    摘要： Disclosed is a planar inductor which has spiral conductor coil means sandwiched between ferromagnetic layers with insulating layers interposed therebetween. The spiral conductor coil means is formed of two spiral conductor coils of the same shape arranged flush with and close to each other. Moreover, the two spiral conductor coils are connected electrically to each other so that currents of different directions flow individually through the conductor coils. Furthermore, the spiral conductor coil means is sandwiched between the two ferromagnetic layers with the insulating layers therebetween, each of the ferromagnetic layers having an area greater than the combined area of the two conductor coils. In the planar inductor according to the present invention, inductance is prevented from lowering while its components are being bonded together, so that the inductance value per unit volume is increased.

    Magnetoresistance effect element having resistance adjusting layer and thin-film insertion layer
    67.
    发明授权
    Magnetoresistance effect element having resistance adjusting layer and thin-film insertion layer 有权
    具有电阻调节层和薄膜插入层的磁阻效应元件

    公开(公告)号：US08085511B2

    公开(公告)日：2011-12-27

    申请号：US12236331

    申请日：2008-09-23

    申请人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

    发明人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

    IPC分类号： G11B5/39 ,  H01L29/82

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3227 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetoresistance effect element includes a magnetoresistance effect film including a magnetically pinned layer having a magnetic material film whose direction of magnetization is pinned substantially in one direction, a magnetically free layer having a magnetic material film whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic metal intermediate layer located between said pinned layer and said free layer. The element also includes a pair of electrodes electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. At least one of the pinned layer and the free layer may include a thin-film insertion layer. The nonmagnetic metal intermediate layer includes a resistance adjusting layer including at least one of oxides, nitrides and fluorides, and the thin-film insertion layer includes at least one element selected from the group consisting of iron (Fe), cobalt (Co) and nickel (Ni).

    摘要翻译： 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括具有磁性材料膜的磁性被钉扎层，该磁性材料膜的磁化方向基本上被固定在一个方向上;磁性层，具有响应于外部磁性的磁化方向变化的磁性材料膜 以及位于所述被钉扎层和所述自由层之间的非磁性金属中间层。 元件还包括电连接到磁阻效应膜的一对电极，以提供垂直于磁阻效应膜的膜平面的感测电流。 被钉扎层和自由层中的至少一个可以包括薄膜插入层。 非磁性金属中间层包括电阻调节层，其包含氧化物，氮化物和氟化物中的至少一种，薄膜插入层包括选自铁（Fe），钴（Co）和镍中的至少一种元素 （Ni）。

    Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
    69.
    发明授权
    Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory 有权
    磁阻效应元件，磁头，磁再现装置和磁存储器

    公开(公告)号：US07593195B2

    公开(公告)日：2009-09-22

    申请号：US11609557

    申请日：2006-12-12

    申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

    发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

    IPC分类号： G11B5/33

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3281 ,  H01F41/303 ,  H01F41/325 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1121

    摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.

    摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。