利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

87 条记录 (耗时 0.054 秒)

    Method of manufacturing solar cell
    61.
    发明授权
    Method of manufacturing solar cell 失效
    制造太阳能电池的方法

    公开(公告)号：US08440489B2

    公开(公告)日：2013-05-14

    申请号：US12828701

    申请日：2010-07-01

    申请人： Dong-Kyun Kim ,  Yun-Gi Kim ,  Jin-Wook Lee ,  Hwa-Young Ko

    发明人： Dong-Kyun Kim ,  Yun-Gi Kim ,  Jin-Wook Lee ,  Hwa-Young Ko

    IPC分类号： H01L21/00

    CPC分类号： H01L31/02168 ,  H01L31/022425 ,  H01L31/056 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of manufacturing a solar cell includes providing a semiconductor substrate; disposing a reflection layer on one side of the semiconductor substrate, wherein the disposing the reflection layer comprises implanting gas into a surface of the one side of the semiconductor substrate and heating the gas; disposing an n+ region and a p+ region separated from each other on the other opposite facing side of the semiconductor substrate; disposing a first electrode connected to the n+ region; and disposing a second electrode connected to the p+ region.

    摘要翻译： 一种制造太阳能电池的方法包括提供半导体衬底; 在半导体衬底的一侧上设置反射层，其中设置反射层包括将气体注入到半导体衬底的一侧的表面中并加热气体; 在所述半导体衬底的另一个相对的面上设置彼此分离的n +区域和p +区域; 设置连接到n +区的第一电极; 以及设置连接到p +区域的第二电极。

    Inkjet printhead and method of manufacturing the same
    65.
    发明授权
    Inkjet printhead and method of manufacturing the same 有权
    喷墨打印头及其制造方法

    公开(公告)号：US08162440B2

    公开(公告)日：2012-04-24

    申请号：US12575087

    申请日：2009-10-07

    申请人： Sung-Joon Park ,  Myong-Jong Kwon ,  Jin-Wook Lee ,  Young-Ung Ha

    发明人： Sung-Joon Park ,  Myong-Jong Kwon ,  Jin-Wook Lee ,  Young-Ung Ha

    IPC分类号： B41J2/14

    CPC分类号： B41J2/14129 ,  B41J2/1603 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1639 ,  B41J2/1645 ,  B41J2/1646 ,  Y10T29/49401

    摘要： Provided are an inkjet printhead and a method of manufacturing the same. The inkjet printhead includes: a substrate including an ink feed hole; a chamber layer formed on the substrate and including a plurality of ink chambers in which ink supplied from the ink feed hole may be filled; and a nozzle layer formed on the chamber layer and including a plurality of nozzles through which ink may be ejected, wherein the chamber layer and the nozzle layer are respectively formed of cured products of a first negative photoresist composition and a second negative photoresist composition, wherein the first negative photoresist composition and the second negative photoresist composition include a bisphenol-A novolac epoxy resin represented by Formula 1; at least one epoxy resin selected from a first epoxy resin represented by Formula 2, and a second epoxy resin represented by Formula 3; a cationic photoinitiator; and a solvent.

    摘要翻译： 提供一种喷墨打印头及其制造方法。 喷墨打印头包括：包括供墨孔的基板; 形成在所述基板上并且包括可以填充从所述供墨孔供应的墨的多个墨室的腔室层; 以及喷嘴层，其形成在所述室层上并且包括可以喷射墨的多个喷嘴，其中所述室层和所述喷嘴层分别由第一负性光致抗蚀剂组合物和第二负性光致抗蚀剂组合物的固化产物形成，其中 第一负性光致抗蚀剂组合物和第二负性光致抗蚀剂组合物包含由式1表示的双酚A酚醛清漆环氧树脂; 至少一种选自由式2表示的第一环氧树脂的环氧树脂和由式3表示的第二环氧树脂; 阳离子光引发剂; 和溶剂。

    Flash memory device capable of reduced programming time
    67.
    发明授权
    Flash memory device capable of reduced programming time 失效
    闪存设备能够减少编程时间

    公开(公告)号：US07974128B2

    公开(公告)日：2011-07-05

    申请号：US12620758

    申请日：2009-11-18

    申请人： Min-Gun Park ,  Jin-Wook Lee ,  Sang-Won Hwang

    发明人： Min-Gun Park ,  Jin-Wook Lee ,  Sang-Won Hwang

    IPC分类号： G11C11/34 ,  G11C16/04

    CPC分类号： G11C16/3404

    摘要： A flash memory device including a high voltage generator circuit that is adapted to supply a program voltage having a target voltage to a selected word line is provided. The flash memory device is adapted to terminate the program interval in accordance with when the program voltage has been restored to the target voltage after dropping below the target voltage. A method for operating the flash memory device is also provided.

    摘要翻译： 提供了一种包括适于向所选字线提供具有目标电压的编程电压的高压发生器电路的闪速存储器件。 闪存器件适于根据在降低到目标电压之后的程序电压恢复到目标电压时终止编程间隔。 还提供了一种用于操作闪速存储器件的方法。

    INKJET PRINTHEAD AND METHOD OF MANUFACTURING THE SAME
    68.
    发明申请
    INKJET PRINTHEAD AND METHOD OF MANUFACTURING THE SAME 有权
    喷墨打印机及其制造方法

    公开(公告)号：US20100060695A1

    公开(公告)日：2010-03-11

    申请号：US12468884

    申请日：2009-05-20

    申请人： Myong-Jong Kwon ,  Sung-Joon Park ,  Jin-Wook Lee

    发明人： Myong-Jong Kwon ,  Sung-Joon Park ,  Jin-Wook Lee

    IPC分类号： B41J2/16 ,  G03F7/20

    CPC分类号： B41J2/1603 ,  B41J2/1631 ,  B41J2/1639

    摘要： An inkjet printhead includes: a substrate in which an ink feed hole is formed; a chamber layer which is formed on the substrate by performing a photolithography process and which includes a first photosensitive resin; and a nozzle layer which is formed on the chamber layer by performing a photolithography process and which includes a second photosensitive resin. The first photosensitive resin and the second photosensitive resin are materials which are developed by different developing solutions, respectively. Additional layers and components may be incorporated into the inkjet printhead and may be formed on an upper surface of the substrate. The additional layers and components may include an insulating layer, one or more heaters, one or more electrodes, a passivation layer, a glue layer, and an anti-cavitation layer.

    摘要翻译： 喷墨打印头包括：形成有供墨孔的基板; 通过进行光刻工艺在基板上形成的包括第一感光性树脂的室层; 以及通过进行光刻工艺在腔室层上形成并包括第二感光树脂的喷嘴层。 第一感光性树脂和第二感光性树脂是分别通过不同的显影液显影的材料。 另外的层和组件可以结合到喷墨打印头中，并且可以形成在基板的上表面上。 附加层和部件可以包括绝缘层，一个或多个加热器，一个或多个电极，钝化层，胶层和抗空穴层。

    Flash memory device capable of improving reliability
    69.
    发明授权
    Flash memory device capable of improving reliability 有权
    能够提高可靠性的闪存装置

    公开(公告)号：US07558114B2

    公开(公告)日：2009-07-07

    申请号：US11454481

    申请日：2006-06-16

    申请人： Jin-Wook Lee ,  Jin-Yub Lee

    发明人： Jin-Wook Lee ,  Jin-Yub Lee

    IPC分类号： G11C16/26 ,  G11C16/08 ,  G11C16/06

    CPC分类号： G11C16/3418 ,  G11C16/26 ,  G11C16/3427

    摘要： A flash memory device includes a memory cell array having a first region and a second region that include memory cells arranged in a plurality of rows and columns; an address storage circuit adapted to store address information for defining the second region; a row decoder circuit adapted to select one of the first and second regions in response to an external address; a voltage generating circuit adapted to generate a read voltage to be provided to a row of the selected region by the row decoder circuit during a read operation; a detecting circuit adapted to detect whether the selected region is included in the second region on the basis of address information and external address information that are stored in the address storage circuit; and a control logic adapted to control the voltage generating circuit in response to an output of the detecting circuit during the read operation. The control logic controls the voltage generating circuit so that a read voltage provided to the row of the second region is lower than a read voltage provided to a row of the first region.

    摘要翻译： 闪速存储器件包括具有第一区域和第二区域的存储单元阵列，所述第二区域包括排列成多行和列的存储单元; 地址存储电路，适于存储用于定义第二区域的地址信息; 行解码器电路，其适于响应于外部地址来选择所述第一和第二区域中的一个; 电压发生电路，其适于在读取操作期间由行解码器电路产生要提供给所选区域的行的读取电压; 检测电路，其适于基于存储在所述地址存储电路中的地址信息和外部地址信息来检测所述选择区域是否包括在所述第二区域中; 以及控制逻辑，适于在读取操作期间响应于检测电路的输出来控制电压产生电路。 控制逻辑控制电压产生电路，使得提供给第二区域的行的读取电压低于提供给第一区域的行的读取电压。

    Semiconductor structures including accumulations of silicon boronide and related methods
    70.
    发明申请
    Semiconductor structures including accumulations of silicon boronide and related methods 审中-公开
    半导体结构包括硅化硼的积累和相关方法

    公开(公告)号：US20070215959A1

    公开(公告)日：2007-09-20

    申请号：US11713877

    申请日：2007-03-05

    申请人： Jin-Wook Lee ,  Chang-Woo Ryoo ,  Tai-Su Park ,  U-In Chung ,  Yu-Gyun Shin

    发明人： Jin-Wook Lee ,  Chang-Woo Ryoo ,  Tai-Su Park ,  U-In Chung ,  Yu-Gyun Shin

    IPC分类号： H01L29/94

    CPC分类号： H01L29/4941 ,  H01L21/28061

    摘要： A semiconductor device may include a semiconductor substrate, first and second source/drain regions on a surface of the semiconductor substrate, and a channel region on the surface of the semiconductor substrate with the channel region between the first and second source/drain regions. An insulating layer pattern may be on the channel region, a first conductive layer pattern may be on the insulating layer, and a second conductive layer pattern may be on the first conductive layer pattern. The insulating layer pattern may be between the first conductive layer pattern and the channel region, and the first conductive layer pattern may include boron doped polysilicon with a surface portion having an accumulation of silicon boronide. The first conductive layer pattern may be between the second conductive layer pattern and the insulating layer pattern, and the second conductive layer pattern may include tungsten. Related methods are also discussed.

    摘要翻译： 半导体器件可以包括半导体衬底，半导体衬底的表面上的第一和第二源极/漏极区域以及在第一和第二源极/漏极区域之间具有沟道区域的半导体衬底的表面上的沟道区域。 绝缘层图案可以在沟道区上，第一导电层图案可以在绝缘层上，并且第二导电层图案可以在第一导电层图案上。 绝缘层图案可以在第一导电层图案和沟道区之间，并且第一导电层图案可以包括硼掺杂多晶硅，表面部分具有硅化硼的积累。 第一导电层图案可以在第二导电层图案和绝缘层图案之间，并且第二导电层图案可以包括钨。 还讨论了相关方法。