Source module, radiation source and lithographic apparatus
    64.
    发明授权
    Source module, radiation source and lithographic apparatus 有权
    源模块,辐射源和光刻设备

    公开(公告)号:US08405055B2

    公开(公告)日:2013-03-26

    申请号:US12566060

    申请日:2009-09-24

    IPC分类号: H05H1/42

    CPC分类号: H05G2/001 H05G2/003

    摘要: A radiation source is configured to generate extreme ultraviolet radiation. The radiation source includes a fuel supply configured to supply a fuel to a plasma formation site; a laser configured to emit a beam of radiation to the plasma formation site so that a plasma that emits extreme ultraviolet radiation is generated when the beam of radiation impacts the fuel; a fuel particulate interceptor constructed and arranged to shield at least part of the radiation source from fuel particulates that are emitted by the plasma, the fuel particulate interceptor comprising a first portion and a second portion, the second portion being positioned closer to the plasma formation site than the first portion, and the first portion being rotatable; and a fuel particulate remover constructed and arranged to remove fuel particulates from a surface of the fuel particulate interceptor and to direct the fuel particulates towards a collection location.

    摘要翻译: 辐射源被配置成产生极紫外辐射。 辐射源包括构造成将燃料供应到等离子体形成位置的燃料供应; 激光器被配置为向等离子体形成位置发射辐射束,使得当辐射束影响燃料时产生发射极紫外辐射的等离子体; 燃料颗粒拦截器,其被构造和布置成将辐射源的至少一部分屏蔽在由等离子体发射的燃料颗粒中,所述燃料颗粒拦截器包括第一部分和第二部分,所述第二部分位于更靠近等离子体形成位置 并且所述第一部分可旋转; 以及构造和布置成从燃料颗粒拦截器的表面去除燃料颗粒并将燃料颗粒引导到收集位置的燃料颗粒去除器。

    RADIATION SOURCE, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
    66.
    发明申请
    RADIATION SOURCE, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 失效
    辐射源,光刻设备和器件制造方法

    公开(公告)号:US20100157267A1

    公开(公告)日:2010-06-24

    申请号:US12540542

    申请日:2009-08-13

    IPC分类号: G03B27/54 B01J19/12

    摘要: A radiation source for generation of extreme ultraviolet radiation or use in high resolution lithography includes a plasma formation site where fuel is contacted by a radiation beam to form a plasma generating EUV radiation. A mirrored collector collects and reflects the EUV radiation generated at a first focus towards a second focus. A contamination barrier is positioned such the periphery of the contamination barrier does not occlude more than 50% of the solid angle subtended by the mirror at the second focus, such that EUV radiation reflected by the collector mirror is not excessively attenuated by passing through the contamination barrier. The contamination barrier serves to trap fuel material such as ions, atoms, molecules or nanodroplets from the plasma to prevent their deposition onto the collector mirror where they reduce the mirror's effective lifetime.

    摘要翻译: 用于产生极紫外辐射或用于高分辨率光刻的辐射源包括等离子体形成位置,其中燃料通过辐射束接触以形成等离子体产生的EUV辐射。 镜像收集器收集并反射在第一焦点处产生的EUV辐射朝向第二焦点。 定位污染屏障,污染屏障的周边不会堵塞在第二焦点处由反射镜对着的立体角的50%以上,使得由集光镜反射的EUV辐射不会通过污染物过度衰减 屏障。 污染屏障用于从等离子体中捕获诸如离子,原子,分子或纳米液体的燃料,以防止它们沉积到收集器反射镜上,从而减少镜的有效寿命。

    Object inspection systems and methods
    67.
    发明授权
    Object inspection systems and methods 有权
    物体检查系统和方法

    公开(公告)号:US09122178B2

    公开(公告)日:2015-09-01

    申请号:US13388267

    申请日:2010-07-02

    摘要: Methods and systems for inspection of an object include the use of spectroscopic techniques for the detection of unwanted particles on an object's surface, based on the different responses of the unwanted particles as compared with the object to be inspected due to their different materials. Time resolved spectroscopy and/or energy resolved spectroscopy of secondary photon emission from the surface of the object can be used to obtain Raman and photoluminescence spectra. The objects to be inspected can for example be a patterning device as used in a lithographic process, for example a reticle, in which case the presence of metal, metal oxide or organic particles can be detected, for example. The methods and apparatus are highly sensitive, for example, being able to detect small particles (sub 100 nm, particularly sub 50 nm) on the patterned side of an EUV reticle.

    摘要翻译: 用于检查物体的方法和系统包括使用光谱技术来检测物体表面上的不需要的颗粒,这是由于不同的物质与不同的物质相比,由于不同的物质而与被检查物体的不同响应。 可以使用来自物体表面的二次光子发射的时间分辨光谱和/或能量分辨光谱来获得拉曼和光致发光光谱。 待检查的物体可以是例如在光刻工艺中使用的图案形成装置,例如掩模版,在这种情况下,例如可以检测到金属,金属氧化物或有机颗粒的存在。 所述方法和装置是高度敏感的,例如能够检测EUV掩模版图案侧的小颗粒(小于100nm,特别是低于50nm)。

    Inspection method and apparatus
    68.
    发明授权
    Inspection method and apparatus 有权
    检验方法和装置

    公开(公告)号:US08830455B2

    公开(公告)日:2014-09-09

    申请号:US12805808

    申请日:2010-08-19

    IPC分类号: G01N21/00

    CPC分类号: G01N21/95623

    摘要: In an aspect, an inspection method for detecting the presence or absence of a defect on an object, the object comprising a recess having a physical depth, is disclosed. The method includes directing radiation at the object, the radiation having a wavelength that is substantially equal to twice an optical depth of the recess, detecting radiation that is re-directed by the object or a defect on the object, and determining the presence or absence of a defect from the re-directed radiation.

    摘要翻译: 在一方面,公开了一种用于检测物体上缺陷的存在或不存在的检查方法,该物体包括具有物理深度的凹部。 该方法包括在物体上引导辐射,辐射具有基本上等于凹部的光学深度的两倍的波长,检测由对象重新引导的辐射或物体上的缺陷,以及确定存在或不存在 来自重新导向的辐射的缺陷。

    Methods and Apparatus for Inspection of Articles, EUV Lithography Reticles, Lithography Apparatus and Method of Manufacturing Devices
    69.
    发明申请
    Methods and Apparatus for Inspection of Articles, EUV Lithography Reticles, Lithography Apparatus and Method of Manufacturing Devices 有权
    用于检查文章的方法和装置,EUV平版印刷线条,平版印刷装置和制造装置的方法

    公开(公告)号:US20140146297A1

    公开(公告)日:2014-05-29

    申请号:US13883083

    申请日:2011-10-06

    IPC分类号: G03F7/20 G01N21/956

    摘要: An EUV lithography reticle is inspected to detect contaminant particles. The inspection apparatus comprises illumination optics with primary radiation. An imaging optical system with plural branches is arranged to form and detect a plurality of images, each branch having an image sensor and forming its image with a different portion of radiation received from the illuminated article. A processor combines information from the detected images to report on the presence and location of contaminant particles. In one or more branches the primary radiation is filtered out, so that the detected image is formed using only secondary radiation emitted by contaminant material in response to the primary radiation. In a dark field imaging branch using the scattered primary radiation, a spatial filter blocks spatial frequency components associated with periodic features of the article under inspection, to allow detection of particles which cannot be detected by secondary radiation.

    摘要翻译: 检查EUV光刻掩模版以检测污染物颗粒。 检查装置包括具有初级辐射的照明光学器件。 布置具有多个分支的成像光学系统以形成和检测多个图像,每个分支具有图像传感器并且形成具有从照明物品接收的辐射的不同部分的图像。 处理器结合来自检测图像的信息,报告污染物颗粒的存在和位置。 在一个或多个分支中,主辐射被滤出,使得仅使用由污染物材料响应于初级辐射发射的二次辐射形成检测到的图像。 在使用散射的初级辐射的暗场成像分支中,空间滤波器阻挡与被检查物品的周期特征相关联的空间频率分量,以允许检测不能被二次辐射检测的粒子。

    Object Inspection Systems and Methods
    70.
    发明申请
    Object Inspection Systems and Methods 有权
    对象检查系统和方法

    公开(公告)号:US20120127467A1

    公开(公告)日:2012-05-24

    申请号:US13388267

    申请日:2010-07-02

    IPC分类号: G01J3/28

    摘要: Methods and systems for inspection of an object include the use of spectroscopic techniques for the detection of unwanted particles on an object's surface, based on the different responses of the unwanted particles as compared with the object to be inspected due to their different materials. Time resolved spectroscopy and/or energy resolved spectroscopy of secondary photon emission from the surface of the object can be used to obtain Raman and photoluminescence spectra. The objects to be inspected can for example be a patterning device as used in a lithographic process, for example a reticle, in which case the presence of metal, metal oxide or organic particles can be detected, for example. The methods and apparatus are highly sensitive, for example, being able to detect small particles (sub 100 nm, particularly sub 50 nm) on the patterned side of an EUV reticle.

    摘要翻译: 用于检查物体的方法和系统包括使用光谱技术来检测物体表面上的不需要的颗粒,这是由于不同的物质与不同的物质相比,由于不同的物质而与被检查物体的不同响应。 可以使用来自物体表面的二次光子发射的时间分辨光谱和/或能量分辨光谱来获得拉曼和光致发光光谱。 待检查的物体可以是例如在光刻工艺中使用的图案形成装置,例如掩模版,在这种情况下,例如可以检测到金属,金属氧化物或有机颗粒的存在。 所述方法和装置是高度敏感的,例如能够检测EUV掩模版图案侧的小颗粒(小于100nm,特别是低于50nm)。