摘要:
A composition of a metallic compound represented by the formula MT, and G is provided by sputtering an M.sub.x G.sub.100-x target. M is a metal selected from the group of titanium, hafnium, zirconium, and mixtures thereof. T is selected from the group of N, C, and mixtures thereof. G is a metal selected from the group of gold, platinum, and palladium. X is an integer from about 65 to about 95. Also provided are substrates coated with the composition and process for depositing the composition on substrates.
摘要:
Plasma enhancement is achieved in a plasma glow system by increasing the number of photoelectric electrons in the plasma glow by producing photoelectrons from the surface of a target in the system by the use of a radiation source. This is more particularly accomplished by flooding the surface of the target with a UV laser beam during the plasma process where emitted photoelectrons are injected into the plasma to increase the plasma density.The plasma enhancement is used in a sputter etching/deposition system which includes a chamber containing a cathode, a target, a substrate platform containing substrate and a pump. An ultraviolet light source such as a UV laser and focussing optics for focussing the UV radiation onto the target through a UV transmission window are also provided. A plasma region in the chamber is enhanced by photons from the laser striking the target and producing photoelectrons which are injected into the plasma to increase its density.
摘要:
A technique for providing an ion beam of variable focussing (concentration) is described using a flexible grid for extracting and accelerating ions from an ion plasma. The grid is electrically conducting and will bow depending on a voltage difference between it and the ion plasma. This bowing of the grid from its initial planar configuration provides focussing of the ion beam. The amount of focussing depends upon the amount the grid is bowed, which in turn depends upon the voltage difference between it and the ion plasma. The same ion source/flexible grid combination can be used for different operations as for example, providing a collimated, low energy ion beam over a large area and then for providing a focussed ion beam of high energy onto a small area.
摘要:
This ion beam system provides an ion beam pattern which is produced without the need for a mask. A programmable grid is used in combination with an ion beam source, where the apertures of the programmable grid can have electrical potentials associated therewith which either extract ions or impede the movement of ions through the apertures. Depending upon the electrical biasing provided to each of the apertures of the grid, different patterns of ions can be extracted through the grid. By changing the electrical bias at different locations on the programmable grid, these different patterns are produced. The patterns can be used for many applications, including patterned deposition, patterned etching, and patterned treatment of surfaces.
摘要:
A compact ion source plug connected to a socket is provided. The source uses a magnetic pole piece which includes a center pole piece and a surrounding circumferential pole piece to form an arcuate fringe field. Cathode elements and anode elements are located within the fringe field for producing a plasma. A source body terminates at one end with at least one grid and forms a plasma chamber with a base member. All of the electrical connections to the plasma generator and the gas connection are through a plug formed on the opposite side of the base member.
摘要:
An electrostatic clutch operable by the Johnsen-Rahbek effect, which may be used to operate, e.g., a print hammer device, is described, said clutch comprising a rotatable drum and a band engagable therewith, wherein the engagable surface of the drum is a semiconductive surface prepared by sputtering or vapor depositing a layer of substantially pure silicon carbide onto a conductive substrate.
摘要:
A method and system for deflecting a broad ion plasma beam which includes an ion source for forming an ion plasma, an extraction means for extracting a broad ion plasma beam from the ion plasma, and deflection means including a non-grounded surface located in the path of the ion plasam beam and at an angle to the path for deflecting the ion plasma beam to a target material. A grounded, screen grid is located in front of the deflecting means in the path of the ion plasma. The screen grid has openings which permit passage of the ions in the ion plasma, but block passage of the electrons. The plasma beam is deflected by the deflection means and the grounded, screen grid onto the target material for sputter cleaning, deposition and ion milling applications.
摘要:
The practice of this disclosure obtains a relatively high efficiency operation for a crystalline semiconductor solar cell containing various defects of the linear and planar types. Linear defects include screw dislocations as well as full and partial dislocations. Planar defects include twins, stacking faults, grain boundaries and surfaces. Such defects normally contain recombination centers at which electrons and holes generated in the semiconductor region recombine with loss to the external current of the charge carried thereby. Through application of the principles of this invention, especial dopant concentrations and conductivity regions are established in a finite region around the linear and planar defects so that electrons and holes which are generated in the semiconductor region by incident radiation are substantially collected for external current as consequence thereof.