Photoelectric enhanced plasma glow discharge system and method including
radiation means
    62.
    发明授权
    Photoelectric enhanced plasma glow discharge system and method including radiation means 失效
    光电增强型等离子体辉光放电系统及方法,包括辐射装置

    公开(公告)号:US4664769A

    公开(公告)日:1987-05-12

    申请号:US791666

    申请日:1985-10-28

    CPC分类号: G21B1/23 H01J37/32321

    摘要: Plasma enhancement is achieved in a plasma glow system by increasing the number of photoelectric electrons in the plasma glow by producing photoelectrons from the surface of a target in the system by the use of a radiation source. This is more particularly accomplished by flooding the surface of the target with a UV laser beam during the plasma process where emitted photoelectrons are injected into the plasma to increase the plasma density.The plasma enhancement is used in a sputter etching/deposition system which includes a chamber containing a cathode, a target, a substrate platform containing substrate and a pump. An ultraviolet light source such as a UV laser and focussing optics for focussing the UV radiation onto the target through a UV transmission window are also provided. A plasma region in the chamber is enhanced by photons from the laser striking the target and producing photoelectrons which are injected into the plasma to increase its density.

    摘要翻译: 通过使用辐射源从系统中的靶的表面产生光电子,通过增加等离子体辉光中的光电子数量,在等离子体发光系统中实现等离子体增强。 这通过在发射的光电子被注入到等离子体中的等离子体工艺期间用UV激光束淹没靶的表面来提高等离子体密度更特别地实现。 等离子体增强用于溅射蚀刻/沉积系统,其包括含有阴极,靶,含基底平台的基底和泵的腔室。 还提供了诸如UV激光和聚焦光学器件的紫外光源,用于通过UV透射窗将UV辐射聚焦到靶上。 腔中的等离子体区域被来自激光撞击靶的光子增强,并产生注入到等离子体中以增加其密度的光电子。

    Single grid focussed ion beam source
    63.
    发明授权
    Single grid focussed ion beam source 失效
    单网格聚焦离子束源

    公开(公告)号:US4538067A

    公开(公告)日:1985-08-27

    申请号:US448122

    申请日:1982-12-09

    摘要: A technique for providing an ion beam of variable focussing (concentration) is described using a flexible grid for extracting and accelerating ions from an ion plasma. The grid is electrically conducting and will bow depending on a voltage difference between it and the ion plasma. This bowing of the grid from its initial planar configuration provides focussing of the ion beam. The amount of focussing depends upon the amount the grid is bowed, which in turn depends upon the voltage difference between it and the ion plasma. The same ion source/flexible grid combination can be used for different operations as for example, providing a collimated, low energy ion beam over a large area and then for providing a focussed ion beam of high energy onto a small area.

    摘要翻译: 使用用于从离子等离子体提取和加速离子的柔性栅格来描述用于提供可变聚焦(浓度)的离子束的技术。 电网是导电的,并且将根据其与离子等离子体之间的电压差而弯曲。 从其初始平面配置的栅格弯曲可以提供离子束的聚焦。 聚焦的量取决于栅格弯曲的量,其又取决于其与离子等离子体之间的电压差。 相同的离子源/柔性网格组合可以用于不同的操作,例如,在大面积上提供准直的低能量离子束,然后将高能量的聚焦离子束提供到小区域上。

    Programmable ion beam patterning system
    64.
    发明授权
    Programmable ion beam patterning system 失效
    可编程离子束图案化系统

    公开(公告)号:US4523971A

    公开(公告)日:1985-06-18

    申请号:US626097

    申请日:1984-06-28

    摘要: This ion beam system provides an ion beam pattern which is produced without the need for a mask. A programmable grid is used in combination with an ion beam source, where the apertures of the programmable grid can have electrical potentials associated therewith which either extract ions or impede the movement of ions through the apertures. Depending upon the electrical biasing provided to each of the apertures of the grid, different patterns of ions can be extracted through the grid. By changing the electrical bias at different locations on the programmable grid, these different patterns are produced. The patterns can be used for many applications, including patterned deposition, patterned etching, and patterned treatment of surfaces.

    摘要翻译: 该离子束系统提供在不需要掩模的情况下产生的离子束图案。 可编程栅格与离子束源组合使用,其中可编程栅格的孔可以具有与其相关联的电势,其提取离子或阻止离子通过孔的移动。 取决于提供给栅格的每个孔的电偏压,可以通过栅格提取不同的离子图案。 通过改变可编程网格上不同位置的电气偏压,产生这些不同的图案。 这些图案可以用于许多应用,包括图案化沉积,图案化蚀刻和表面图案化处理。

    Compact plug connectable ion source
    65.
    发明授权
    Compact plug connectable ion source 失效
    紧凑型插头可连接离子源

    公开(公告)号:US4446403A

    公开(公告)日:1984-05-01

    申请号:US382266

    申请日:1982-05-26

    摘要: A compact ion source plug connected to a socket is provided. The source uses a magnetic pole piece which includes a center pole piece and a surrounding circumferential pole piece to form an arcuate fringe field. Cathode elements and anode elements are located within the fringe field for producing a plasma. A source body terminates at one end with at least one grid and forms a plasma chamber with a base member. All of the electrical connections to the plasma generator and the gas connection are through a plug formed on the opposite side of the base member.

    摘要翻译: 提供连接到插座的紧凑型离子源插头。 源使用包括中心极片和周围圆周极片的磁极片,以形成弧形条纹场。 阴极元件和阳极元件位于边缘场内用于产生等离子体。 源体在一端终止于至少一个栅格,并形成具有基底构件的等离子体室。 与等离子体发生器和气体连接的所有电连接通过形成在基体的相对侧上的塞子。

    Electrostatic clutch
    66.
    发明授权
    Electrostatic clutch 失效
    静电离合器

    公开(公告)号:US4393967A

    公开(公告)日:1983-07-19

    申请号:US313717

    申请日:1981-10-21

    CPC分类号: H02N13/00 B41J9/40

    摘要: An electrostatic clutch operable by the Johnsen-Rahbek effect, which may be used to operate, e.g., a print hammer device, is described, said clutch comprising a rotatable drum and a band engagable therewith, wherein the engagable surface of the drum is a semiconductive surface prepared by sputtering or vapor depositing a layer of substantially pure silicon carbide onto a conductive substrate.

    摘要翻译: 描述了可由Johnsen-Rahbek效应操作的静电离合器,其可用于操作例如打印锤装置,所述离合器包括可旋转滚筒和与其可接合的带,其中滚筒的可接合表面是半导体 通过溅射或气相沉积基本上纯的碳化硅层到导电基底上制备的表面。

    System and method for deflecting and focusing a broad ion beam
    67.
    发明授权
    System and method for deflecting and focusing a broad ion beam 失效
    用于偏转和聚焦宽离子束的系统和方法

    公开(公告)号:US4381453A

    公开(公告)日:1983-04-26

    申请号:US221661

    申请日:1980-12-31

    CPC分类号: H01J37/3053

    摘要: A method and system for deflecting a broad ion plasma beam which includes an ion source for forming an ion plasma, an extraction means for extracting a broad ion plasma beam from the ion plasma, and deflection means including a non-grounded surface located in the path of the ion plasam beam and at an angle to the path for deflecting the ion plasma beam to a target material. A grounded, screen grid is located in front of the deflecting means in the path of the ion plasma. The screen grid has openings which permit passage of the ions in the ion plasma, but block passage of the electrons. The plasma beam is deflected by the deflection means and the grounded, screen grid onto the target material for sputter cleaning, deposition and ion milling applications.

    摘要翻译: 一种用于偏转宽离子等离子体束的方法和系统,其包括用于形成离子等离子体的离子源,用于从离子等离子体提取宽离子等离子体束的提取装置,以及包括位于路径中的非接地表面的偏转装置 的离子等离子束并且与用于将离子等离子体束偏转到目标材料的路径成一定角度。 接地的屏栅位于离子等离子体路径中的偏转装置的前面。 筛栅具有允许离子在离子等离子体中通过但阻挡电子通过的开口。 等离子体束被偏转装置和接地的筛网偏转到目标材料上用于溅射清洗,沉积和离子铣削应用。

    Process of making a radiation responsive device
    68.
    发明授权
    Process of making a radiation responsive device 失效
    制造辐射响应装置的过程

    公开(公告)号:US4155785A

    公开(公告)日:1979-05-22

    申请号:US856941

    申请日:1977-12-02

    摘要: The practice of this disclosure obtains a relatively high efficiency operation for a crystalline semiconductor solar cell containing various defects of the linear and planar types. Linear defects include screw dislocations as well as full and partial dislocations. Planar defects include twins, stacking faults, grain boundaries and surfaces. Such defects normally contain recombination centers at which electrons and holes generated in the semiconductor region recombine with loss to the external current of the charge carried thereby. Through application of the principles of this invention, especial dopant concentrations and conductivity regions are established in a finite region around the linear and planar defects so that electrons and holes which are generated in the semiconductor region by incident radiation are substantially collected for external current as consequence thereof.

    摘要翻译: 本公开的实践获得了包含线性和平面类型的各种缺陷的晶体半导体太阳能电池的相对高效率的操作。 线性缺陷包括螺旋位错以及全部和部分位错。 平面缺陷包括双胞胎,堆垛层错,晶界和表面。 这样的缺陷通常包含复合中心,在半导体区域中产生的电子和空穴与由此携带的电荷的外部电流的损耗重新组合。 通过应用本发明的原理,在围绕线性和平面缺陷的有限区域内建立了特殊的掺杂剂浓度和导电性区域,使得通过入射辐射在半导体区域中产生的电子和空穴基本上被收集用于外部电流 其中。