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    METHOD AND APPARATUS FOR CONNECTING WIRELESS NETWORK IN A DIGITAL DEVICE
    61.
    发明申请
    METHOD AND APPARATUS FOR CONNECTING WIRELESS NETWORK IN A DIGITAL DEVICE 有权
    用于在无线网络中连接数字设备的方法和装置

    公开(公告)号：US20120033568A1

    公开(公告)日：2012-02-09

    申请号：US13198501

    申请日：2011-08-04

    Applicant: Woo-Jin Park ,  Seong-Il Hahm ,  Jin-Wook Lee

    Inventor： Woo-Jin Park ,  Seong-Il Hahm ,  Jin-Wook Lee

    IPC: H04W24/00

    CPC classification number: H04W76/023 ,  H04W8/26 ,  H04W76/14 ,  H04W84/18

    Abstract: A method and apparatus for connecting a wireless network in a digital device are provided. The method of connecting the wireless network of the digital device includes receiving a signal from a peer digital device, comparing Receive Signal Strength (RSS) of the received signal with a specified threshold to determine whether the peer digital device is located nearby, if it is determined that the peer digital device is located nearby, establishing a Wireless Local Area Network (WLAN) connection to the peer digital device, and automatically executing an application program that uses the WLAN connection.

    Abstract translation: 提供了一种用于连接数字设备中的无线网络的方法和装置。 连接数字设备的无线网络的方法包括从对等数字设备接收信号，将接收到的信号的接收信号强度（RSS）与指定的阈值进行比较，以确定对等数字设备是否位于附近，如果是 确定对等数字设备位于附近，建立到对等数字设备的无线局域网（WLAN）连接，并自动执行使用WLAN连接的应用程序。

    Flash memory device capable of reduced programming time
    63.
    发明授权
    Flash memory device capable of reduced programming time 失效
    闪存设备能够减少编程时间

    公开(公告)号：US07974128B2

    公开(公告)日：2011-07-05

    申请号：US12620758

    申请日：2009-11-18

    Applicant: Min-Gun Park ,  Jin-Wook Lee ,  Sang-Won Hwang

    Inventor： Min-Gun Park ,  Jin-Wook Lee ,  Sang-Won Hwang

    IPC: G11C11/34 ,  G11C16/04

    CPC classification number: G11C16/3404

    Abstract: A flash memory device including a high voltage generator circuit that is adapted to supply a program voltage having a target voltage to a selected word line is provided. The flash memory device is adapted to terminate the program interval in accordance with when the program voltage has been restored to the target voltage after dropping below the target voltage. A method for operating the flash memory device is also provided.

    Abstract translation: 提供了一种包括适于向所选字线提供具有目标电压的编程电压的高压发生器电路的闪速存储器件。 闪存器件适于根据在降低到目标电压之后的程序电压恢复到目标电压时终止编程间隔。 还提供了一种用于操作闪速存储器件的方法。

    SYSTEM AND METHOD FOR PROVIDING DEVICE MANAGEMENT SERVICE TO ELECTRONIC DEVICE HAVING NO BROADBAND COMMUNICATION MODULE
    64.
    发明申请
    SYSTEM AND METHOD FOR PROVIDING DEVICE MANAGEMENT SERVICE TO ELECTRONIC DEVICE HAVING NO BROADBAND COMMUNICATION MODULE 审中-公开
    向没有宽带通信模块的电子设备提供设备管理服务的系统和方法

    公开(公告)号：US20100199333A1

    公开(公告)日：2010-08-05

    申请号：US12669756

    申请日：2008-07-18

    Applicant: Ji-Eun Keum ,  Hae-Young Jun ,  Jin-Wook Lee ,  Wuk Kim ,  Hun Lim

    Inventor： Ji-Eun Keum ,  Hae-Young Jun ,  Jin-Wook Lee ,  Wuk Kim ,  Hun Lim

    IPC: G06F15/173 ,  G06F21/00

    CPC classification number: H04L41/00 ,  H04L41/046

    Abstract: Disclosed is a system for providing an electronic device with a DM service, including: a DM server for providing the electronic device with the DM service; and a wireless terminal capable of being directly connected to the DM server for establishing a DM session while cooperating with the electronic device, generating an MO used for managing the electronic device with reference to a DDF of the electronic device if the wireless terminal receives the DDF of the electronic device from the electronic device through the DM session, and transmitting the generated MO to the DM server.

    Abstract translation: 公开了一种用于向电子设备提供DM服务的系统，包括：DM服务器，用于向电子设备提供DM服务; 以及能够直接连接到DM服务器的无线终端，用于与电子设备协作建立DM会话，如果无线终端接收到DDF，则参照电子设备的DDF生成用于管理电子设备的MO 通过DM会话从电子设备发送电子设备，并将生成的MO发送到DM服务器。

    INKJET PRINTHEAD AND METHOD OF MANUFACTURING THE SAME
    65.
    发明申请
    INKJET PRINTHEAD AND METHOD OF MANUFACTURING THE SAME 有权
    喷墨打印机及其制造方法

    公开(公告)号：US20100060695A1

    公开(公告)日：2010-03-11

    申请号：US12468884

    申请日：2009-05-20

    Applicant: Myong-Jong Kwon ,  Sung-Joon Park ,  Jin-Wook Lee

    Inventor： Myong-Jong Kwon ,  Sung-Joon Park ,  Jin-Wook Lee

    IPC: B41J2/16 ,  G03F7/20

    CPC classification number: B41J2/1603 ,  B41J2/1631 ,  B41J2/1639

    Abstract: An inkjet printhead includes: a substrate in which an ink feed hole is formed; a chamber layer which is formed on the substrate by performing a photolithography process and which includes a first photosensitive resin; and a nozzle layer which is formed on the chamber layer by performing a photolithography process and which includes a second photosensitive resin. The first photosensitive resin and the second photosensitive resin are materials which are developed by different developing solutions, respectively. Additional layers and components may be incorporated into the inkjet printhead and may be formed on an upper surface of the substrate. The additional layers and components may include an insulating layer, one or more heaters, one or more electrodes, a passivation layer, a glue layer, and an anti-cavitation layer.

    Abstract translation: 喷墨打印头包括：形成有供墨孔的基板; 通过进行光刻工艺在基板上形成的包括第一感光性树脂的室层; 以及通过进行光刻工艺在腔室层上形成并包括第二感光树脂的喷嘴层。 第一感光性树脂和第二感光性树脂是分别通过不同的显影液显影的材料。 另外的层和组件可以结合到喷墨打印头中，并且可以形成在基板的上表面上。 附加层和部件可以包括绝缘层，一个或多个加热器，一个或多个电极，钝化层，胶层和抗空穴层。

    Flash memory device capable of improving reliability
    66.
    发明授权
    Flash memory device capable of improving reliability 有权
    能够提高可靠性的闪存装置

    公开(公告)号：US07558114B2

    公开(公告)日：2009-07-07

    申请号：US11454481

    申请日：2006-06-16

    Applicant: Jin-Wook Lee ,  Jin-Yub Lee

    Inventor： Jin-Wook Lee ,  Jin-Yub Lee

    IPC: G11C16/26 ,  G11C16/08 ,  G11C16/06

    CPC classification number: G11C16/3418 ,  G11C16/26 ,  G11C16/3427

    Abstract: A flash memory device includes a memory cell array having a first region and a second region that include memory cells arranged in a plurality of rows and columns; an address storage circuit adapted to store address information for defining the second region; a row decoder circuit adapted to select one of the first and second regions in response to an external address; a voltage generating circuit adapted to generate a read voltage to be provided to a row of the selected region by the row decoder circuit during a read operation; a detecting circuit adapted to detect whether the selected region is included in the second region on the basis of address information and external address information that are stored in the address storage circuit; and a control logic adapted to control the voltage generating circuit in response to an output of the detecting circuit during the read operation. The control logic controls the voltage generating circuit so that a read voltage provided to the row of the second region is lower than a read voltage provided to a row of the first region.

    Abstract translation: 闪速存储器件包括具有第一区域和第二区域的存储单元阵列，所述第二区域包括排列成多行和列的存储单元; 地址存储电路，适于存储用于定义第二区域的地址信息; 行解码器电路，其适于响应于外部地址来选择所述第一和第二区域中的一个; 电压发生电路，其适于在读取操作期间由行解码器电路产生要提供给所选区域的行的读取电压; 检测电路，其适于基于存储在所述地址存储电路中的地址信息和外部地址信息来检测所述选择区域是否包括在所述第二区域中; 以及控制逻辑，适于在读取操作期间响应于检测电路的输出来控制电压产生电路。 控制逻辑控制电压产生电路，使得提供给第二区域的行的读取电压低于提供给第一区域的行的读取电压。

    Semiconductor structures including accumulations of silicon boronide and related methods
    67.
    发明申请
    Semiconductor structures including accumulations of silicon boronide and related methods 审中-公开
    半导体结构包括硅化硼的积累和相关方法

    公开(公告)号：US20070215959A1

    公开(公告)日：2007-09-20

    申请号：US11713877

    申请日：2007-03-05

    Applicant: Jin-Wook Lee ,  Chang-Woo Ryoo ,  Tai-Su Park ,  U-In Chung ,  Yu-Gyun Shin

    Inventor： Jin-Wook Lee ,  Chang-Woo Ryoo ,  Tai-Su Park ,  U-In Chung ,  Yu-Gyun Shin

    IPC: H01L29/94

    CPC classification number: H01L29/4941 ,  H01L21/28061

    Abstract: A semiconductor device may include a semiconductor substrate, first and second source/drain regions on a surface of the semiconductor substrate, and a channel region on the surface of the semiconductor substrate with the channel region between the first and second source/drain regions. An insulating layer pattern may be on the channel region, a first conductive layer pattern may be on the insulating layer, and a second conductive layer pattern may be on the first conductive layer pattern. The insulating layer pattern may be between the first conductive layer pattern and the channel region, and the first conductive layer pattern may include boron doped polysilicon with a surface portion having an accumulation of silicon boronide. The first conductive layer pattern may be between the second conductive layer pattern and the insulating layer pattern, and the second conductive layer pattern may include tungsten. Related methods are also discussed.

    Abstract translation: 半导体器件可以包括半导体衬底，半导体衬底的表面上的第一和第二源极/漏极区域以及在第一和第二源极/漏极区域之间具有沟道区域的半导体衬底的表面上的沟道区域。 绝缘层图案可以在沟道区上，第一导电层图案可以在绝缘层上，并且第二导电层图案可以在第一导电层图案上。 绝缘层图案可以在第一导电层图案和沟道区之间，并且第一导电层图案可以包括硼掺杂多晶硅，表面部分具有硅化硼的积累。 第一导电层图案可以在第二导电层图案和绝缘层图案之间，并且第二导电层图案可以包括钨。 还讨论了相关方法。

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