公开(公告)号：US09911856B2

公开(公告)日：2018-03-06

申请号：US12900145

申请日：2010-10-07

申请人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Junichiro Sakata

IPC分类号： H01L29/786 ,  H01L29/423

CPC分类号： H01L29/7869 ,  H01L29/42384 ,  H01L29/78606 ,  H01L29/78696

摘要： One of objects is to provide a semiconductor device with stable electric characteristics, in which an oxide semiconductor is used. The semiconductor device includes a thin film transistor including an oxide semiconductor layer, and a silicon oxide layer over the thin film transistor. The thin film transistor includes a gate electrode layer, a gate insulating layer whose thickness is equal to or larger than 100 nm and equal to or smaller than 350 nm, the oxide semiconductor layer, a source electrode layer and a drain electrode layer. In the thin film transistor, the difference of the threshold voltage value is 1 V or less between before and after performance of a measurement in which the voltage of 30 V or −30 V is applied to the gate electrode layer at a temperature of 85° C. for 12 hours.

公开(公告)号：US09753637B2

公开(公告)日：2017-09-05

申请号：US12971347

申请日：2010-12-17

申请人： Yusuke Miyazawa ,  Fuminori Homma ,  Junichiro Sakata ,  Tatsushi Nashida

发明人： Yusuke Miyazawa ,  Fuminori Homma ,  Junichiro Sakata ,  Tatsushi Nashida

IPC分类号： G06F3/041 ,  G06F3/0488

CPC分类号： G06F3/0488 ,  G06F2203/04108

摘要： An information processing apparatus includes a detection section configured to detect an operating body in proximity to a display screen, an identification section configured to identify whether the operating body detected by the detection section is in proximity to a selection item included in the display screen, and a display control section configured to temporarily superimpose and display a region including selection item content of the selection item over a previously displayed display region when the identification section identifies the operating body as being in proximity to the selection item and configured to end a display of the region including the selection item content of the selection item when the detection section no longer detects the operating body as being in proximity to the display screen.

公开(公告)号：US09627198B2

公开(公告)日：2017-04-18

申请号：US12894791

申请日：2010-09-30

申请人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Junichiro Sakata

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/02 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L21/02554 ,  G02F1/1368 ,  G02F1/167 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02266 ,  H01L21/02422 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. The impurity concentration in the oxide semiconductor layer is reduced in the following manner: a silicon oxide layer including many defects typified by dangling bonds is formed in contact with the oxide semiconductor layer, and an impurity such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O) included in the oxide semiconductor layer is diffused into the silicon oxide layer. Further, a mixed region is provided between the oxide semiconductor layer and the silicon oxide layer. The mixed region includes oxygen, silicon, and at least one kind of metal element that is included in the oxide semiconductor.

公开(公告)号：US09606765B2

公开(公告)日：2017-03-28

申请号：US12724678

申请日：2010-03-16

申请人： Junichiro Sakata

发明人： Junichiro Sakata

IPC分类号： G06F17/00 ,  G06F3/16 ,  H04N21/482 ,  G06F17/30 ,  G06F3/0481 ,  H04N21/431 ,  G10H1/00 ,  G11B27/034 ,  G11B27/10 ,  G11B27/34 ,  G11B20/10

CPC分类号： G06F3/16 ,  G06F3/0481 ,  G06F17/30772 ,  G10H1/0041 ,  G11B27/034 ,  G11B27/105 ,  G11B27/34 ,  G11B2020/10546 ,  G11B2220/213 ,  G11B2220/2545 ,  H04N21/4312 ,  H04N21/4825

摘要： Audio data are played back by a personal computer a relationship with a playback process recognized easily. Displays showing the contents of play lists are arranged and displayed so that the contents become continuous in sequence in a playback sequence from content that is currently being played back from a display of an operation element that causes an image of a playback process to appear or from a display showing the content which is currently being played back. When the playback of one piece of content of one play list from among a plurality of play lists is terminated and one piece of content of an other play list is played back, at least the content that is currently being played back and content to be subsequently played back are displayed so that the contents can be distinguished.

公开(公告)号：US09530968B2

公开(公告)日：2016-12-27

申请号：US11351713

申请日：2006-02-10

申请人： Junichiro Sakata ,  Takahiro Kawakami ,  Hisao Ikeda

发明人： Junichiro Sakata ,  Takahiro Kawakami ,  Hisao Ikeda

IPC分类号： H01L29/08 ,  H01L51/00 ,  H01L51/50 ,  H01L27/32

CPC分类号： H01L51/006 ,  H01L27/3244 ,  H01L51/0059 ,  H01L51/5012 ,  H01L2251/5315 ,  H01L2251/5323

摘要： The present invention provides a light emitting element whose driving voltage is low, and a light emitting element having longer lifetime. Moreover, the invention provides a light emitting element with high manufacturing yield. A light emitting element has a layer containing an organic material and an inorganic material, wherein activation energy of electrical conductivity of the layer containing the organic material and the inorganic material, is 0.01 eV or more and less than 0.30 eV. Preferably, the activation energy of electrical conductivity of the layer containing the organic material and the inorganic material, is 0.01 eV or more and less than 0.26 eV. More preferably, the activation energy of the electrical conductivity of the layer containing the organic material and the inorganic material, is 0.01 eV or more and less than 0.20 eV.

公开(公告)号：US09136390B2

公开(公告)日：2015-09-15

申请号：US13104546

申请日：2011-05-10

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Jun Koyama

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Jun Koyama

IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

摘要： A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

摘要翻译： 提供一种包括具有氧化物半导体层和优异的电特性的薄膜晶体管的半导体器件。 此外，提供了一种用于制造半导体器件的方法，其中在一个衬底上形成了多种不同结构的薄膜晶体管，以形成多种电路，并且其中步骤数目没有大大增加。 在绝缘表面上形成金属薄膜之后，在其上形成氧化物半导体层。 然后，进行氧化处理如热处理以部分或全部氧化金属薄膜。 此外，在诸如逻辑电路和矩阵电路之类的重点放在诸如操作速度的电路之间，薄膜晶体管的结构是不同的。

公开(公告)号：US09006729B2

公开(公告)日：2015-04-14

申请号：US12943558

申请日：2010-11-10

申请人： Kengo Akimoto ,  Junichiro Sakata ,  Yoshiaki Oikawa ,  Shunpei Yamazaki

发明人： Kengo Akimoto ,  Junichiro Sakata ,  Yoshiaki Oikawa ,  Shunpei Yamazaki

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/45

CPC分类号： H01L29/7869 ,  H01L29/45

摘要： It is an object to provide a method for manufacturing a highly reliable semiconductor device having a thin film transistor formed using an oxide semiconductor and having stable electric characteristics. The semiconductor device includes an oxide semiconductor film overlapping with a gate electrode with a gate insulating film interposed therebetween; and a source electrode and a drain electrode which are in contact with the oxide semiconductor film. The source electrode and the drain electrode include a mixture, metal compound, or alloy containing one or more of a metal with a low electronegativity such as titanium, magnesium, yttrium, aluminum, tungsten, and molybdenum. The concentration of hydrogen in the source electrode and the drain electrode is 1.2 times, preferably 5 times or more as high as that of hydrogen in the oxide semiconductor film.

摘要翻译： 本发明的目的是提供一种用于制造具有使用氧化物半导体形成并且具有稳定的电特性的薄膜晶体管的高度可靠的半导体器件的方法。 半导体器件包括与栅电极重叠的氧化物半导体膜，其间插入有栅极绝缘膜; 以及与氧化物半导体膜接触的源电极和漏电极。 源电极和漏极包括含有一种或多种具有低电负性的金属如钛，镁，钇，铝，钨和钼的混合物，金属化合物或合金。 源电极和漏电极中的氢浓度是氧化物半导体膜中的氢的浓度的1.2倍，优选为5倍以上。

公开(公告)号：US08957414B2

公开(公告)日：2015-02-17

申请号：US13399375

申请日：2012-02-17

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara

IPC分类号： H01L29/12 ,  H01L21/324 ,  H01L21/28 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L21/465 ,  H01L21/02565 ,  H01L21/28176 ,  H01L21/324 ,  H01L21/477 ,  H01L29/04 ,  H01L29/045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

摘要翻译： 一种用于大功率应用的半导体器件，其中提供了具有高质量生产率的新型半导体材料。 形成氧化物半导体膜，然后对暴露的氧化物半导体膜进行第一热处理，以便减少氧化物半导体膜中的杂质如水分或氢。 接下来，为了进一步减少氧化物半导体膜中的杂质，例如水分或氢气，通过离子注入法，离子掺杂法等将氧添加到氧化物半导体膜中，之后，第二热处理为 在暴露的氧化物半导体膜上进行。

公开(公告)号：US08900916B2

公开(公告)日：2014-12-02

申请号：US12832329

申请日：2010-07-08

申请人： Shunpei Yamazaki ,  Miyuki Hosoba ,  Kosei Noda ,  Hiroki Ohara ,  Toshinari Sasaki ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Miyuki Hosoba ,  Kosei Noda ,  Hiroki Ohara ,  Toshinari Sasaki ,  Junichiro Sakata

IPC分类号： H01L21/00

CPC分类号： H01L29/66969 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/7869

摘要： A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.

摘要翻译： 一种高度可靠的半导体器件及其制造方法，其包括具有稳定电特性的薄膜晶体管。 在包括具有沟道形成区域的半导体层是氧化物半导体层的薄膜晶体管的半导体器件的制造方法中，减少诸如水分的杂质的热处理以提高氧化物半导体层的纯度并氧化氧化物 进行半导体层（脱水或脱氢的热处理）。 氧化物半导体层中的水分等杂质，以及存在于栅极绝缘层中的杂质都会降低，氧化物半导体层和氧化物半导体层之间的界面中存在的水分等杂质与氧化物半导体层 减少了

公开(公告)号：US08841662B2

公开(公告)日：2014-09-23

申请号：US12917548

申请日：2010-11-02

申请人： Shunpei Yamazaki ,  Suzunosuke Hiraishi ,  Kengo Akimoto ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Suzunosuke Hiraishi ,  Kengo Akimoto ,  Junichiro Sakata

IPC分类号： H01L29/786 ,  H01L27/12

CPC分类号： H01L29/66969 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869

摘要： An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers in which a layer in contact with the oxide semiconductor layer is formed using a metal whose work function is lower than the work function of the oxide semiconductor layer or an alloy containing such a metal. Layers other than the layer in contact with the oxide semiconductor layer of the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like.

摘要翻译： 在包括氧化物半导体层的薄膜晶体管中，目的是减少氧化物半导体层与与氧化物半导体层电连接的源电极层和漏电极层之间的接触电阻。 源极和漏极电极层具有两层或多层的层叠结构，其中使用功函数低于氧化物半导体层的功函数或合金的金属形成与氧化物半导体层接触的层 含有这样的金属。 使用选自Al，Cr，Cu，Ta，Ti，Mo或W的元素形成与源极和漏极电极层的氧化物半导体层接触的层以外的层，包含任何这些元素作为 组分，包含任何这些元素组合的合金等。