Abstract:
Methods and systems for generating a high resolution image for a specimen from one or more low resolution images of the specimen are provided. One system includes one or more computer subsystems configured for acquiring one or more low resolution images of a specimen. The system also includes one or more components executed by the one or more computer subsystems. The one or more components include a model that includes one or more first layers configured for generating a representation of the one or more low resolution images. The model also includes one or more second layers configured for generating a high resolution image of the specimen from the representation of the one or more low resolution images.
Abstract:
Methods and systems for detecting defects on a wafer are provided. One system includes one or more computer subsystems configured for generating a rendered image based on information for a design printed on the wafer. The rendered image is a simulation of an image generated by the optical inspection subsystem for the design printed on the wafer. The computer subsystem(s) are also configured for comparing the rendered image to an optical image of the wafer generated by the optical inspection subsystem. The design is printed on the wafer using a reticle. In addition, the computer subsystem(s) are configured for detecting defects on the wafer based on results of the comparing.
Abstract:
The disclosure is directed to providing visual feedback for inspection algorithms and difference filters used to process test and reference images from an inspection system. A user interface may be configured for displaying information and accepting user commands. A computing system communicatively coupled to the user interface may be configured to receive at least one set of test and reference images collected by the inspection system. The computing system may be further configured to provide at least one visual representation of the test and reference images via the user interface to show effects of an inspection algorithm and/or difference filter.
Abstract:
In an optical inspection tool, an illumination aperture is opened at each of a plurality of aperture positions of an illumination pupil area one at a time across the illumination pupil area. For each aperture opening position, an incident beam is directed towards the illumination pupil area so as to selectively pass a corresponding ray bundle of the illumination beam at a corresponding set of one or more incident angles towards the sample and an output beam, which is emitted from the sample in response to the corresponding ray bundle of the incident beam impinging on the sample at the corresponding set of one or more incident angles, is detected. A defect detection characteristic for each aperture position is determined based on the output beam detected for each aperture position. An optimum aperture configuration is determined based on the determined defect detection characteristic for each aperture position.
Abstract:
Methods and systems for detecting defects on a wafer using defect-specific information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest formed on the wafer and a known DOI occurring proximate to or in the pattern of interest. The information includes an image of the target on the wafer. The method also includes searching for target candidates on the wafer or another wafer. The target candidates include the pattern of interest. The target and target candidate locations are provided to defect detection. In addition, the method includes detecting the known DOI in the target candidates by identifying potential DOI locations in images of the target candidates and applying one or more detection parameters to images of the potential DOI locations.
Abstract:
Systems and methods for determining one or more parameters of a wafer inspection process are provided. One method includes aligning optical image(s) of an alignment target to their corresponding electron beam images generated by an electron beam defect review system. The method also includes determining different local coordinate transformations for different subsets of alignment targets based on results of the aligning. In addition, the method includes determining positions of defects in wafer inspection system coordinates based on coordinates of the defects determined by the electron beam defect review system and the different local coordinate transformations corresponding to different groups of the defects into which the defects have been separated. The method further includes determining one or more parameters for an inspection process for the wafer based on defect images acquired at the determined positions by a wafer inspection system.
Abstract:
Systems and methods for classifying defects detected on a wafer are provided. One method includes detecting defects on a wafer based on output generated for the wafer by an inspection system. The method also includes determining one or more attributes for at least one of the defects based on portions of a standard reference image corresponding to the at least one of the defects. The method further includes classifying the at least one of the defects based at least in part on the one or more determined attributes.
Abstract:
Methods and systems for detecting defects on a wafer are provided. One method includes altering one or more design clips based on how the one or more design clips will appear in output generated by a wafer inspection process for a wafer. The method also includes aligning the one or more altered design clips to the output generated for the wafer during the wafer inspection process. In addition, the method includes detecting defects on the wafer based on the output aligned to the one or more altered design clips.
Abstract:
Methods and systems for detecting defects on a wafer using defect-specific and multi-channel information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest (POI) formed on the wafer and a known defect of interest (DOI) occurring proximate to or in the POI. The method also includes detecting the known DOI in target candidates by identifying potential DOI locations based on images of the target candidates acquired by a first channel of an inspection system and applying one or more detection parameters to images of the potential DOI locations acquired by a second channel of the inspection system. Therefore, the image(s) used for locating potential DOI locations and the image(s) used for detecting defects can be different.
Abstract:
The correlation of optical images with SEM images includes acquiring a full optical image of a sample by scanning the sample with an optical inspection sub-system, storing the full optical image, identifying a location of a feature-of-interest present in the full optical image with an additional sources, acquiring an SEM image of a portion of the sample that includes the feature at the identified location with a SEM tool, acquiring an optical image portion at the location identified by the additional source, the image portions including a reference structure, correlating the image portion and the SEM image based on the presence of the feature-of-interest and the reference structure in both the image portions and the SEM image, and transferring a location of the feature-of-interest in the SEM image into the coordinate system of the image portion of the full optical image to form a corrected optical image.