公开(公告)号：US20080303606A1

公开(公告)日：2008-12-11

申请号：US11760207

申请日：2007-06-08

申请人： Kai Liu ,  Robert Charles Frye

发明人： Kai Liu ,  Robert Charles Frye

IPC分类号： H03H7/42 ,  H01F7/06

CPC分类号： H03H7/42 ,  H01F17/0013 ,  H03H7/1775 ,  Y10T29/4902 ,  Y10T29/49071

摘要： A wide-band balun device includes a first metallization deposited over a substrate and oriented in a first coil. The first coil extends horizontally across the substrate while maintaining a substantially flat vertical profile. A second metallization is deposited over the substrate and oriented in a second coil. The second coil is magnetically coupled to the first coil and a portion of the second coil oriented interiorly of the first coil. A third metallization is deposited over the substrate and oriented in a third coil. The third coil is magnetically coupled to the first and second coils. A first portion of the third coil is oriented interiorly of the second coil. The third coil has a balanced port connected to the third coil between secondhand third portions of the third coil.

摘要翻译： 宽带平衡 - 不平衡转换器包括沉积在衬底上并定向在第一线圈中的第一金属化。 第一线圈水平延伸穿过衬底，同时保持基本平坦的垂直轮廓。 第二金属化沉积在衬底上并定向在第二线圈中。 第二线圈磁耦合到第一线圈，并且第二线圈的一部分定向在第一线圈的内部。 第三金属化沉积在衬底上并定向在第三线圈中。 第三线圈磁耦合到第一和第二线圈。 第三线圈的第一部分位于第二线圈的内部。 第三线圈具有在第三线圈的第二手第三部分之间连接到第三线圈的平衡端口。

公开(公告)号：US20080182387A1

公开(公告)日：2008-07-31

申请号：US11701561

申请日：2007-01-31

申请人： Tao Feng ,  Ming Sun ,  Yueh-Se Ho ,  Kai Liu

发明人： Tao Feng ,  Ming Sun ,  Yueh-Se Ho ,  Kai Liu

IPC分类号： H01L21/00

CPC分类号： H01L21/67132 ,  H01L21/288 ,  H01L21/6836 ,  H01L24/02 ,  H01L24/11 ,  H01L2221/68327 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014

摘要： A method of fabricating a semiconductor device employing electroless plating including wafer backside protection during wet processing is disclosed. The method includes the steps of laminating a wafer back side and a frame with a protective tape, applying a protective coating to a peripheral portion of the wafer and an adjoining exposed area of the protective tape, the protective coating, protective tape, and wafer forming a protected wafer assembly, curing the frame-supported protective coating, cutting the protected wafer assembly from the protective tape surrounding the protective coating, wet processing the protected wafer assembly, laminating the protected wafer assembly with a second tape, dicing the wafer, and picking up the die from the protective tape.

摘要翻译： 公开了一种在湿法处理中制造采用化学镀的半导体器件的方法，包括晶片背面保护。 该方法包括以下步骤：将晶片背面和框架与保护带层压，将保护涂层施加到晶片的周边部分以及相邻的保护带的暴露区域，保护涂层，保护带和晶片成形 保护的晶片组件，固化框架支撑的保护涂层，将保护的晶片组件从围绕保护涂层的保护带切割，湿处理受保护的晶片组件，用第二带层压受保护的晶片组件，切割晶片，以及拾取 从保护胶带上取下模具。

公开(公告)号：US20070031299A1

公开(公告)日：2007-02-08

申请号：US11404522

申请日：2006-04-14

申请人： Kai-Li Jiang ,  Kai Liu ,  Shou-Shan Fan

发明人： Kai-Li Jiang ,  Kai Liu ,  Shou-Shan Fan

IPC分类号： B01J19/00 ,  B82B3/00

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/162 ,  C01B2202/08

摘要： A device (20) for manufacturing a carbon nanotube array (10) includes a reaction chamber (220), a gas introducing tube (228), and a quartz boat (240). The reaction chamber includes a first gas inlet (222), a second gas inlet (224), and a gas outlet (226). The first gas inlet is configured for introducing a reaction gas, and the second gas inlet is configured for introducing a disturbance gas. The quartz boat is disposed in the reaction chamber. The quartz boat is used to carry a substrate (12) from/upon which the carbon nanotube array grows. The gas introducing tube is connected to the second gas inlet and to the quartz boat. The gas introducing tube is used to transport the disturbance gas introduced from the second gas inlet to the quartz boat to disturb/interrupt nanotube growth.

摘要翻译： 用于制造碳纳米管阵列（10）的装置（20）包括反应室（220），气体导入管（228）和石英舟（240）。 反应室包括第一气体入口（222），第二气体入口（224）和气体出口（226）。 第一气体入口构造成用于引入反应气体，并且第二气体入口构造成用于引入扰动气体。 石英舟设置在反应室中。 石英舟用于承载碳纳米管阵列生长的基底（12）。 气体导入管连接到第二气体入口和石英舟。 气体导入管用于将从第二气体入口引入的干扰气体输送到石英舟，以扰乱/中断纳米管生长。

公开(公告)号：US07144562B2

公开(公告)日：2006-12-05

申请号：US10718491

申请日：2003-11-19

申请人： Kai Liu ,  Peter Klavins ,  Limin Zhao

发明人： Kai Liu ,  Peter Klavins ,  Limin Zhao

IPC分类号： C01B35/00

CPC分类号： H01L39/24 ,  C01B32/907 ,  C04B35/56 ,  C04B35/563 ,  C04B35/65 ,  C04B35/653 ,  C04B2235/40 ,  C04B2235/421 ,  C04B2235/425 ,  C04B2235/661 ,  C04B2235/761 ,  C04B2235/767 ,  C04B2235/79

摘要： Methods are described for synthesizing stoichiometric LiBC and hole doped Li1-xBC (lithium borocarbide) according to heating processes, such as by both an arc-melting method and a sealed tantalum ampoule method. The arc-melting method requires forming a pellet of uniformly-mixed elemental lithium, boron, and graphite and subjecting it to an arc-melt process sufficient to trigger a self-propagating exothermic reaction. Alternatively, the titanium ampoule method requires sealing uniformly-mixed elemental lithium, boron, and graphite (Li—B—C) in a tantalum ampoule; and heating under sufficient temperature for a sufficient period of time. Hole-doped Li1-xBC (0≦x≦0.37) can then be produced, such as through vacuum de-intercalation from the LiBC. According to the present invention, the hexagonal crystal lattice remains largely intact, with only slight decreases in lattice parameters upon hole-doping. The samples are intrinsically diamagnetic and are semiconducting in the 2 K to 300 K range studied.

摘要翻译： 描述了根据加热过程，例如通过电弧熔化法和密封的钽安瓿法合成化学计量的LiBC和掺杂锂的Li 1-x BC（硼氢化锂）的方法。 电弧熔化法需要形成均匀混合的元素锂，硼和石墨的颗粒，并使其经受足够的电弧熔融过程以引发自扩散的放热反应。 或者，钛安瓿方法需要在钽安瓿中密封均匀混合的元素锂，硼和石墨（Li-B-C）; 并在足够的温度下加热足够的时间。 然后可以产生孔掺杂的Li 1-x BC（0 <= x <= 0.37），例如通过来自LiBC的真空去插入。 根据本发明，六方晶格晶体基本保持完好，空穴掺杂时晶格参数仅略微降低。 样品本质上是抗磁性的，并且在所研究的2K至300K范围内是半导体的。

公开(公告)号：US20060209876A1

公开(公告)日：2006-09-21

申请号：US11343397

申请日：2006-01-31

申请人： Kai Liu ,  Carl Wang ,  Arty Chandra ,  Jin Wang

发明人： Kai Liu ,  Carl Wang ,  Arty Chandra ,  Jin Wang

IPC分类号： H04L12/413

CPC分类号： H04W16/28 ,  H04B7/0695

摘要： An access point receives uplink transmissions from client stations using directional antenna beams. The directional antenna beams are generated by an antenna array. The different directional antenna beams are assigned beam identification numbers, and a preferred antenna beam is selected for each client station. The client stations in the different antenna beam regions initiate their uplink transmissions using assigned backoff slots within the contention window. The access point selects the preferred directional antenna beam corresponding to the directional antenna beams assigned to the backoff slots.

摘要翻译： 接入点使用定向天线波束从客户端站接收上行链路传输。 定向天线波束由天线阵列产生。 不同的定向天线波束被分配波束识别号，并且为每个客户站选择优选的天线波束。 不同天线波束区域中的客户站在竞争窗口内使用分配的退避时隙来发起其上行链路传输。 接入点选择对应于分配给退避时隙的定向天线波束的优选定向天线波束。

公开(公告)号：USD935565S1

公开(公告)日：2021-11-09

申请号：US29715510

申请日：2019-12-03

申请人： Kai Liu

设计人： Kai Liu

公开(公告)号：USD870833S1

公开(公告)日：2019-12-24

申请号：US29660708

申请日：2018-08-22

申请人： Kai Liu

设计人： Kai Liu

公开(公告)号：US10513049B2

公开(公告)日：2019-12-24

申请号：US14414651

申请日：2014-11-02

申请人： Kai Liu

发明人： Kai Liu

IPC分类号： B28B11/24 ,  B01J3/04 ,  F22B1/00 ,  F22B33/18 ,  F24S90/00 ,  F24S10/40 ,  A61L2/07

摘要： The present invention discloses a pump-type autoclave system and a providing method for steam and pressure thereof, wherein the pump-type autoclave system comprises an autoclave, a steam providing device and a compressor, said steam providing device comprises a water storage container and a heating device used for heating said water storage container, said water storage container, the compressor and the autoclave are connected through a pipeline to form a closed loop, an inlet of the compressor is connected with a steam output port of the water storage container, an outlet of the compressor is connected to a steam input port of the autoclave, and a condensate water drain outlet of the autoclave is connected to the water storage container. The present invention uses the compressor to depressurize an intermediate-low temperature water source to obtain steam, and the steam is pumped into the autoclave and condensed to release heat to obtain corresponding temperature and pressure. Since the present invention fully utilizes a great amount of low-cost intermediate-low temperature heat sources obtained from natural, industrial or living waste heat to provide needed high temperature, steam and pressure to the autoclave system, the energy is saved.

公开(公告)号：US09571489B2

公开(公告)日：2017-02-14

申请号：US13209212

申请日：2011-08-12

申请人： Nobukazu Sugiyama ,  Kai Liu ,  Ludovic Douillet ,  Lobrenzo Wingo

发明人： Nobukazu Sugiyama ,  Kai Liu ,  Ludovic Douillet ,  Lobrenzo Wingo

IPC分类号： H04L29/06 ,  G06F21/57

CPC分类号： H04L63/0853 ,  G06F21/572 ,  H04L63/083 ,  H04L63/168

摘要： According to one embodiment of the invention, a method for secured execution of commands is described. Initially, a second electronic device authenticates a first electronic device and registers the first electronic device as a trusted device. Thereafter, up receipt of a message with one or more embedded commands, such commands are executed without any pre-established communication protocol if the message is from the registered first electronic device.

摘要翻译： 根据本发明的一个实施例，描述了用于安全执行命令的方法。 最初，第二电子设备认证第一电子设备并将第一电子设备注册为可信设备。 此后，如果消息来自注册的第一电子设备，则在没有任何预先建立的通信协议的情况下执行具有一个或多个嵌入式命令的消息的接收，这样的命令被执行。

公开(公告)号：US20150102425A1

公开(公告)日：2015-04-16

申请号：US14052711

申请日：2013-10-12

申请人： Ming Sun ,  Kai Liu ,  Xiao Tian Zhang ,  Yueh Se Ho ,  Leeshawn Luo

发明人： Ming Sun ,  Kai Liu ,  Xiao Tian Zhang ,  Yueh Se Ho ,  Leeshawn Luo

IPC分类号： H01L23/495 ,  H01L29/78 ,  H01L29/66 ,  H01L23/00

CPC分类号： H01L23/49562 ,  H01L23/492 ,  H01L23/4928 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/97 ,  H01L29/66477 ,  H01L29/78 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/83205 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/83895 ,  H01L2224/97 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2924/014

摘要： A power device package for containing, protecting and providing electrical contacts for a power transistor includes a top and bottom lead frames for directly no-bump attaching to the power transistor. The power transistor is attached to the bottom lead frame as a flip-chip with a source contact and a gate contact directly no-bumping attaching to the bottom lead frame. The power transistor has a bottom drain contact attaching to the top lead frame. The top lead frame further includes an extension for providing a bottom drain electrode substantially on a same side with the bottom lead frame. In a preferred embodiment, the power device package further includes a joint layer between device metal of source, gate or drain and top or bottom lead frame, through applying ultrasonic energy.

摘要翻译： 用于容纳，保护和提供用于功率晶体管的电触头的功率器件封装包括用于直接不连接到功率晶体管的顶部和底部引线框架。 功率晶体管作为具有源极接触的倒装芯片附接到底部引线框架，并且栅极接触件直接地不连接到底部引线框架上。 功率晶体管具有附接到顶部引线框架的底部漏极接触。 顶部引线框架还包括用于提供与底部引线框架基本上在同一侧上的底部漏极电极的延伸部分。 在优选实施例中，功率器件封装还包括通过施加超声波能量的源极，栅极或漏极以及顶部或底部引线框架的器件金属之间的接合层。