摘要:
A resist processing method has the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) including a structural unit represented by the formula (XX), and having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, and a photo acid generator (B) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and then drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern. wherein, Ra1 represents a hydrogen atom, a halogen atom or a C1 to C3 saturated hydrocarbon group which may be substituted with a halogen atom; Ra2 represents a single bond or a divalent organic group; Ra3 represents a hydrogen atom, a C1 to C12 saturated hydrocarbon group which may be substituted with a hydroxy group etc., and Ra4 represent a C1 to C12 saturated hydrocarbon group.
摘要:
The present invention provides a chemically amplified positive resist composition comprising (A) a resin obtainable by reacting a novolak resin, a poly(hydroxystyrene) and a compound having at least two vinyl ether structures, and (B) an acid generator.
摘要:
The present invention provides a process for producing a photoresist pattern comprising the following steps (1) to (11): (1) a step of applying the first photoresist composition comprising a resin comprising a structural unit having an acid-labile group in its side chain and being itself insoluble or poorly soluble in an alkali aqueous solution but becoming soluble in an alkali aqueous solution by the action of an acid, and an acid generator, on a substrate followed by conducting drying, thereby forming the first photoresist film, (2) a step of prebaking the first photoresist film, (3) a step of exposing the prebaked first photoresist film to radiation, (4) a step of baking the exposed first photoresist film, (5) a step of developing the baked first photoresist film with the first alkaline developer, thereby forming the first photoresist pattern, (6) a step of forming a coating layer on the first photoresist pattern, (7) a step of applying the second photoresist composition on the coating layer followed by conducting drying, thereby forming the second photoresist film, (8) a step of prebaking the second photoresist film, (9) a step of exposing the prebaked second photoresist film to radiation, (10) a step of baking the exposed second photoresist film, and (11) a step of developing the baked second photoresist film with the second alkaline developer, thereby forming the second photoresist pattern.
摘要:
A compound represented by the formula (I): wherein R1 represents a hydrogen atom etc., R2 and R3 each independently represent a hydrogen atom etc., R4 represents a C1-C8 divalent hydrocarbon group, R5 represents a single bond etc., and R6 represents an unsubstituted or substituted C6-C20 aromatic hydrocarbon group, a polymer comprising a structural unit derived from the compound represented by the formula (I) and a chemically amplified positive resist composition comprising the polymer, at least one acid generator and at least one solvent.
摘要:
A chemically amplified positive resist composition comprising (A) a resin which comprises (i) a polymerization unit represented by the formula (I): (ii) a polymerization unit represented by the formula (II): and (iii) at least one polymerization unit selected from the group consisting of a polymerization unit represented by the formula (III): and a polymerization unit represented by the formula (IV): and (B) at least one acid generator.
摘要:
A chemically amplified positive resist composition comprising (A) a resin which comprises (i) a polymerization unit represented by the formula (I): wherein R7 represents a hydrogen atom etc., R8 represents a C1-C4 alkyl group, p represents an integer of 1 to 3, and q represents an integer of 0 to 2, (ii) at least one polymerization unit selected from a group consisting of a polymerization unit represented by the formula (II): wherein R1 represents a hydrogen atom etc., R2 represents a C1-C8 alkyl group and ring X represents an alicyclic hydrocarbon group, and a polymerization unit represented by the formula (IV): wherein R3 represents a hydrogen atom etc., R4 and R5 independently represents a hydrogen atom etc., R10 represents a C1-C6 alkyl group etc., and (iii) a polymerization unit represented by the formula (III): wherein R3, R4 and R5 are the same as defined above, E represents a divalent hydrocarbon group, G represents a single bond etc., Z represents a carbonyl group etc. and L represents an anthryl group etc., and (B) at least one acid generator.
摘要翻译:一种化学放大正型抗蚀剂组合物,其包含(A)树脂,其包含(i)由式(I)表示的聚合单元:其中R7表示氢原子等,R8表示C1-C4烷基,p表示整数 为1〜3,q为0〜2的整数,(ii)至少一种选自由式(II)表示的聚合单元的聚合单元:其中,R1表示氢原子等,R2 代表C1-C8烷基,X代表脂环族烃基,和由式(Ⅳ)表示的聚合单元:其中R3表示氢原子等,R4和R5独立地表示氢原子等,R10表示 C 1 -C 6烷基等,和(iii)由式(III)表示的聚合单元:其中R3,R4和R5与上述定义相同,E表示二价烃基,G表示单键等 Z表示羰基等,L r 表示蒽基等,和(B)至少一种酸发生剂。
摘要:
A monitoring system which is suitable for, for example, preventing crime for a residence, includes a plurality of terminals (31, 32, . . . ) for monitoring whether predetermined monitoring points are in a stationary state or a nonstationary state, and a central processing device (10) for controlling a setting/canceling operation of alarm operations of the terminals (31, 32, . . . ). The central processing device (10) has a communication unit that receives information related to the stationary/nonstationary states from the terminals and transmits predetermined information including commands to the terminals. Each terminal has a communication unit that transmits information related to stationary/nonstationary states to the central processing device and receives the predetermined information from the central processing device. Thus bidirectional communication can be achieved between the central processing device and the terminals. The plurality of terminals (31, 32, . . . ) may include a terminal with an emergency call unit which operates in an emergency to call or notify, and a terminal having a notification unit which indicates that notification of occurrence of nonstationay state has been accepted by a predetermined point of contact.
摘要:
The present invention provides a positive resist composition comprising a resin which itself is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid, and an acid generator, wherein the content of halogen atoms in the resin is 40% by weight or more, at least one of structural units constituting the resin is a structural unit having an alicyclic hydrocarbon skeleton, and the structural unit having an alicyclic hydrocarbon skeleton contains therein at least one group rendering the resin soluble in an alkali aqueous solution by the action of an acid, and at least one halogen atom.
摘要:
An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.
摘要:
A thermal type infrared sensing device has; a plurality of light-receiving electrodes for outputting a change of surface charge associated with a polarization that occurs in a dielectric when subjected to infrared radiation; and a plurality of compensation electrodes, corresponding one for one to plurality of light-receiving electrodes, for compensating the outputs of corresponding light-receiving electrodes, and wherein plurality of compensation electrodes are formed on a different substrate from a substrate on which plurality of light-receiving electrodes are formed.