公开(公告)号：US06778751B2

公开(公告)日：2004-08-17

申请号：US09817058

申请日：2001-03-27

Applicant: Hitoshi Tada ,  Kazuhisa Takagi

Inventor： Hitoshi Tada ,  Kazuhisa Takagi

IPC: G02B610

CPC classification number: G02F1/025 ,  G02F2201/063 ,  G02F2201/12 ,  G02F2202/42

Abstract: An optical waveguide ridge has a side with a flat portion extending uniformly from a top of the ridge to a surface of a semiconductor substrate, the flat portion being in contact with an exposed surface of the substrate. A p-type electrode extends from the top of the optical waveguide ridge downward in contact with a dielectric film on the flat portion of the optical waveguide ridge. The p-type electrode further extends over the dielectric film onto the exposed surface of the semiconductor substrate where an end of the electrode is a bonding pad.

Abstract translation: 光波导脊具有从脊的顶部到半导体基板的表面均匀延伸的平坦部分的一侧，平坦部分与基板的暴露表面接触。 p型电极从光波导脊的顶部向下延伸，与光波导脊的平坦部分上的电介质膜接触。 p型电极进一步在电介质膜上延伸到半导体衬底的露出表面上，其中电极的端部是焊盘。

公开(公告)号：US06277663B1

公开(公告)日：2001-08-21

申请号：US09395956

申请日：1999-09-14

Applicant: Keisuke Matsumoto ,  Kazuhisa Takagi ,  Tohru Takiguchi

Inventor： Keisuke Matsumoto ,  Kazuhisa Takagi ,  Tohru Takiguchi

IPC: H01L2100

CPC classification number: H01S5/227 ,  H01S5/2077 ,  H01S5/2081 ,  H01S5/2086 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2275

Abstract: A semiconductor laser diode includes a mesa having a width on a semiconductor substrate and aligned with a direction of resonance, a current blocking layer formed by selective growth on both sides of the mesa and having a first embedded layer and a second embedded layer covering the first embedded layer.

Abstract translation: 半导体激光二极管包括在半导体衬底上具有宽度并与谐振方向对准的台面，通过在台面两侧选择生长而形成的电流阻挡层，并具有第一嵌入层和覆盖第一嵌入层的第二嵌入层 嵌入层。

公开(公告)号：US06226310B1

公开(公告)日：2001-05-01

申请号：US09032784

申请日：1998-03-02

Applicant: Kazuhisa Takagi ,  Hitoshi Tada

Inventor： Kazuhisa Takagi ,  Hitoshi Tada

IPC: H01S319

CPC classification number: H01S5/0265 ,  H01S5/0425 ,  H01S5/10 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/2275

Abstract: A semiconductor optical device includes a semiconductor laser region for producing laser light and having a first optical waveguide mesa structure including a first active layer and a diffraction grating, and first current blocking layers adjacent to opposite sides; a light modulator region for modulating the laser light and having a second optical waveguide mesa structure continuous with the first optical waveguide mesa structure and including a second active layer, and second current blocking layers adjacent to opposite sides; and a window region for propagating the laser light modulated by the light modulator region and having a mesa-shaped window structure continuous with the second optical waveguide mesa structure, the mesa width of the window structure being larger than the mesa width of the second optical waveguide mesa structure. The light is prevented from leaking from the window and reaching the interface of the window structure and a burying layer adjacent to the window structure. The laser light is not reflected at the interface of the window structure and the buried layer. The shape of the beam of laser light emitted from the window structure is not distorted, resulting in a satisfactory connection to an optical system.

Abstract translation: 半导体光学器件包括用于产生激光的半导体激光器区域，并具有包括第一有源层和衍射光栅的第一光波导台面结构以及与相对侧相邻的第一电流阻挡层; 用于调制激光并具有与第一光波导台面结构连续并包括第二有源层的第二光波导台面结构的光调制器区域和与相对侧相邻的第二电流阻挡层; 以及窗口区域，用于传播由所述光调制器区域调制的激光，并且具有与所述第二光波导台面结构连续的台面形窗口结构，所述窗口结构的台面宽度大于所述第二光波导的台面宽度 台面结构。 防止光从窗口泄漏并到达窗口结构的界面和与窗户结构相邻的掩埋层。 激光在窗口结构和埋层的界面处不被反射。 从窗结构发射的激光束的形状不变形，导致与光学系统的良好连接。

公开(公告)号：US5781578A

公开(公告)日：1998-07-14

申请号：US735080

申请日：1996-10-18

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: H01S5/00 ,  G02F1/01 ,  G02F1/015 ,  H01S5/026 ,  H01S5/042 ,  H01S5/068 ,  H01S3/096

CPC classification number: G02F1/0121 ,  H01S5/0427 ,  G02F1/015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/0265

Abstract: An optical semiconductor device includes a semiconductor laser diode having a first electrode for receiving a current for driving the laser diode, and a grounding electrode; a modulator for modulating light emitted from the semiconductor laser diode, the modulator having a second electrode for receiving a current for driving the modulator, and a grounding electrode connected to the grounding electrode of the semiconductor laser diode; a first resistor having a terminal connected to the first electrode of the laser diode; a second resistor connected between the second electrode of the modulator and the grounding electrode of the modulator; and a third resistor having a first terminal connected to the grounding electrode of the modulator and a grounded second terminal. Therefore, the laser diode driving current can be made larger when the modulator absorbs the laser light than when the modulator does not absorb the laser light, so that the oscillating wavelength is shortened, resulting in an inexpensive optical semiconductor device that hardly degrades optical pulse transmission performance.

Abstract translation: 光学半导体器件包括具有用于接收用于驱动激光二极管的电流的第一电极的半导体激光二极管和接地电极; 用于调制从半导体激光二极管发射的光的调制器，具有用于接收用于驱动调制器的电流的第二电极的调制器和连接到半导体激光二极管的接地电极的接地电极; 第一电阻器，其具有连接到激光二极管的第一电极的端子; 连接在调制器的第二电极和调制器的接地电极之间的第二电阻器; 以及具有连接到调制器的接地电极的第一端子和接地的第二端子的第三电阻器。 因此，当调制器吸收激光时，激光二极管的驱动电流可以比调制器不吸收激光时的激光二极管驱动电流更大，从而使振荡波长缩短，从而导致廉价的光学半导体器件几乎不降低光脉冲传输 性能。