公开(公告)号：US20050169044A1

公开(公告)日：2005-08-04

申请号：US11070379

申请日：2005-03-03

申请人： Keiji Hosotani

发明人： Keiji Hosotani

IPC分类号： G11C11/15 ,  F16K25/00 ,  G11C11/00 ,  G11C11/02 ,  H01L21/8246 ,  H01L27/00 ,  H01L27/22 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L27/224

摘要： A magnetic memory device includes a first wiring layer which runs in the first direction, a memory element which is arranged above the first wiring layer, second wiring layers which are arranged on the memory element and run in a second direction different from the first direction, and a first magnetic shield layer which is formed on the side surface of each second wiring layer and formed around the side surface of the memory element.

摘要翻译： 磁存储器件包括沿第一方向延伸的第一布线层，布置在第一布线层上方的存储元件，布置在存储元件上并沿与第一方向不同的第二方向延伸的第二布线层， 以及第一磁屏蔽层，其形成在每个第二布线层的侧表面上并围绕存储元件的侧表面形成。

公开(公告)号：US06914810B2

公开(公告)日：2005-07-05

申请号：US10895841

申请日：2004-07-22

申请人： Keiji Hosotani

发明人： Keiji Hosotani

IPC分类号： G11C11/14 ,  G11C11/15 ,  G11C11/56 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/5607 ,  H01L27/224

摘要： A magnetic memory device includes magneto resistive elements which are laminated in each cell with easy axes of magnetization set in different directions, each magneto resistive elements having at least two resistance values, and first and second wirings which sandwich the magneto resistive elements and are arranged to extend in different directions from each other.

摘要翻译： 一种磁存储器件包括磁阻元件，该电阻元件层叠在每个单元中，具有沿不同方向设置的易磁化磁化轴，每个磁阻元件具有至少两个电阻值，以及夹着电阻元件的第一和第二布线， 相互不同的方向延伸。

公开(公告)号：US06914284B2

公开(公告)日：2005-07-05

申请号：US10722514

申请日：2003-11-28

申请人： Kentaro Nakajima ,  Keiji Hosotani

发明人： Kentaro Nakajima ,  Keiji Hosotani

IPC分类号： H01L27/105 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/76 ,  H01L31/062 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/12 ,  B82Y10/00 ,  H01L27/222 ,  H01L27/228

摘要： A magnetic memory device includes a first interconnection which runs in a first direction, a second interconnection which runs in a second direction different from the first direction, a magnetoresistive element which is arranged at the intersection of and between the first and second interconnections, and a metal layer which is connected to the magnetoresistive element and has a side surface that partially coincides with a side surface of the magnetoresistive element.

摘要翻译： 磁存储器件包括沿第一方向延伸的第一互连，沿与第一方向不同的第二方向延伸的第二互连;布置在第一和第二互连之间的交叉点处的磁阻元件，以及 金属层，其连接到磁阻元件并具有与磁阻元件的侧表面部分重合的侧表面。

公开(公告)号：US06829162B2

公开(公告)日：2004-12-07

申请号：US10316911

申请日：2002-12-12

申请人： Keiji Hosotani

发明人： Keiji Hosotani

IPC分类号： G11C1115

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/5607 ,  H01L27/224

摘要： A magnetic memory device includes magneto resistive elements which are laminated in each cell with easy axes of magnetization set in different directions, each magneto resistive elements having at least two resistance values, and first and second wirings which sandwich the magneto resistive elements and are arranged to extend in different directions from each other.

摘要翻译： 一种磁存储器件包括磁阻元件，该电阻元件层叠在每个单元中，具有沿不同方向设置的易磁化磁化轴，每个磁阻元件具有至少两个电阻值，以及夹着电阻元件的第一和第二布线， 相互不同的方向延伸。

公开(公告)号：US6051859A

公开(公告)日：2000-04-18

申请号：US8491

申请日：1998-01-16

申请人： Keiji Hosotani ,  Yusuke Kohyama

发明人： Keiji Hosotani ,  Yusuke Kohyama

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10852 ,  H01L28/82 ,  H01L28/55 ,  H01L28/90

摘要： Provided is a semiconductor device and a method of manufacturing the semiconductor device having a stacked type capacitor excellent in storage capacity, breakdown voltage and reliability. A storage node electrode (Ru) of the stacked-type capacitor is formed on a contact hole of the underlying insulating film by the steps of forming the side wall of the contact hole diagonally at a taper angle within the range of 90 to 110.degree., forming a storage node electrode on the inner wall surface of the contact hole, filling SOG in the contact hole, etching off the Ru film on the insulating film using SOG as a mask, and etching off the Ru film formed on the upper peripheral region of the inner wall in the depth direction of the contact hole. Thereafter, the dielectric film of the stacked-type capacitor formed of a (Ba, Sr) TiO.sub.3 thin film is formed on the Ru storage node electrode. In this manner, it is possible to obtain a stack-type capacitor having a drastically-improved step coverage and a high breakdown voltage. In addition, it is easy to reduce the distance between adjacent Ru storage node electrodes within a resolution limit of lithography, compared to the conventional method.

摘要翻译： 提供一种半导体器件和制造具有存储容量，击穿电压和可靠性优异的堆叠型电容器的半导体器件的方法。 层叠型电容器的存储节点电极（Ru）通过以下步骤形成在下面的绝缘膜的接触孔上：将接触孔的侧壁对角地成90度到110度的锥角， 在接触孔的内壁表面上形成存储节点电极，在接触孔中填充SOG，使用SOG作为掩模蚀刻绝缘膜上的Ru膜，并且蚀刻形成在上部周边区域上的Ru膜 接触孔深度方向的内壁。 此后，在Ru储存节点电极上形成由（Ba，Sr）TiO 3薄膜形成的层叠型电容器的电介质膜。 以这种方式，可以获得具有急剧改善的台阶覆盖和高击穿电压的堆叠型电容器。 此外，与常规方法相比，在光刻的分辨率极限内容易地减小相邻Ru存储节点电极之间的距离。