公开(公告)号：US09040424B2

公开(公告)日：2015-05-26

申请号：US13416834

申请日：2012-03-09

申请人： Janos Fucsko ,  David H. Wells ,  Patrick Flynn ,  Whonchee Lee

发明人： Janos Fucsko ,  David H. Wells ,  Patrick Flynn ,  Whonchee Lee

IPC分类号： H01L21/311 ,  H01L21/306 ,  H01L21/762 ,  H01L29/66

CPC分类号： H01L21/30608 ,  H01L21/302 ,  H01L21/31116 ,  H01L21/76232 ,  H01L29/66818

摘要： A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.

摘要翻译： 单晶硅蚀刻方法包括提供其中具有至少一个沟槽的单晶硅衬底。 将单晶硅衬底暴露于底切单晶硅的各向异性蚀刻剂。 通过控制蚀刻的长度，可以产生单晶硅中的单晶硅岛或平滑的垂直壁。

公开(公告)号：US08419906B2

公开(公告)日：2013-04-16

申请号：US12234783

申请日：2008-09-22

申请人： Suresh Ramarajan ,  Whonchee Lee

发明人： Suresh Ramarajan ,  Whonchee Lee

IPC分类号： C25D17/14 ,  C25D17/12 ,  C25D17/06 ,  C25D17/00

CPC分类号： C25D17/002 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/10 ,  C25D17/12 ,  H01L21/2885

摘要： Electroplating systems that include a plurality of electrodes, a power supply operably coupled to the plurality of electrodes, a platen for bearing a substrate on which metal features are to be formed, and an electrode support are disclosed. The electrode support may be configured for suspending the electrode assembly over an upper surface of the substrate disposed on the platen in spaced relation to and in alignment with the substrate or for supporting the electrode assembly in a stationary position over the substrate when the voltage is applied across the plurality of electrodes. The electrodes may be adjacent, mutually spaced and electrically isolated and connected in series so as to be oppositely polarized when the voltage is applied thereacross or may be connected so as to have alternating polarities when the voltage is applied thereacross.

摘要翻译： 公开了包括多个电极的电镀系统，可操作地耦合到多个电极的电源，用于承载要形成金属特征的基板的压板和电极支撑件。 电极支撑件可以被配置用于将电极组件悬挂在设置在压板上的衬底的上表面上，该衬底的上表面与衬底间隔开并与之对准，或者当施加电压时，将电极组件支撑在衬底上的静止位置 跨越多个电极。 电极可以相邻，相互间隔并且电隔离并且串联连接，以便当在其上施加电压时可以相反地极化，或者可以在电压施加到其上时具有交替的极性。

公开(公告)号：US20120322263A1

公开(公告)日：2012-12-20

申请号：US13599791

申请日：2012-08-30

申请人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

发明人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

IPC分类号： H01L21/306

CPC分类号： H01L21/30608 ,  B81B2203/033 ,  B81B2203/0338 ,  B81C1/00626 ,  C30B29/06 ,  C30B33/10

摘要： A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the direction. The resulting structure includes an undercut feature when patterned in the direction.

摘要翻译： 单晶硅蚀刻方法包括提供其中具有至少一个沟槽的单晶硅衬底。 将衬底暴露于缓冲的氟化物蚀刻溶液，其在<100>方向图案化时，其将硅切割以提供横向搁板。 当沿<100>方向图案化时，所得结构包括底切特征。

公开(公告)号：US08159050B2

公开(公告)日：2012-04-17

申请号：US12687619

申请日：2010-01-14

申请人： Janos Fucsko ,  David H. Wells ,  Patrick Flynn ,  Whonchee Lee

发明人： Janos Fucsko ,  David H. Wells ,  Patrick Flynn ,  Whonchee Lee

IPC分类号： H01L29/06

CPC分类号： H01L21/30608 ,  H01L21/302 ,  H01L21/31116 ,  H01L21/76232 ,  H01L29/66818

摘要： A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.

摘要翻译： 单晶硅蚀刻方法包括提供其中具有至少一个沟槽的单晶硅衬底。 将单晶硅衬底暴露于底切单晶硅的各向异性蚀刻剂。 通过控制蚀刻的长度，可以产生单晶硅中的单晶硅岛或平滑的垂直壁。

公开(公告)号：US07973388B2

公开(公告)日：2011-07-05

申请号：US12565557

申请日：2009-09-23

申请人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

发明人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

IPC分类号： H01L29/06

CPC分类号： H01L21/30608 ,  B81B2203/033 ,  B81B2203/0338 ,  B81C1/00626 ,  C30B29/06 ,  C30B33/10

摘要： A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the direction. The resulting structure includes an undercut feature when patterned in the direction.

摘要翻译： 单晶硅蚀刻方法包括提供其中具有至少一个沟槽的单晶硅衬底。 将衬底暴露于缓冲的氟化物蚀刻溶液，其在<100>方向图案化时，其将硅切割以提供横向搁板。 当沿<100>方向图案化时，所得结构包括底切特征。

公开(公告)号：US20100109120A1

公开(公告)日：2010-05-06

申请号：US12687619

申请日：2010-01-14

申请人： Janos Fucsko ,  David H. Wells ,  Patrick Flynn ,  Whonchee Lee

发明人： Janos Fucsko ,  David H. Wells ,  Patrick Flynn ,  Whonchee Lee

IPC分类号： H01L29/06

CPC分类号： H01L21/30608 ,  H01L21/302 ,  H01L21/31116 ,  H01L21/76232 ,  H01L29/66818

摘要： A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.

摘要翻译： 单晶硅蚀刻方法包括提供其中具有至少一个沟槽的单晶硅衬底。 将单晶硅衬底暴露于底切单晶硅的各向异性蚀刻剂。 通过控制蚀刻的长度，可以产生单晶硅中的单晶硅岛或平滑的垂直壁。

公开(公告)号：US07628932B2

公开(公告)日：2009-12-08

申请号：US11445718

申请日：2006-06-02

申请人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

发明人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

IPC分类号： H01L21/302

CPC分类号： H01L21/30608 ,  B81B2203/033 ,  B81B2203/0338 ,  B81C1/00626 ,  C30B29/06 ,  C30B33/10

摘要： A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the direction. The resulting structure includes an undercut feature when patterned in the direction.

摘要翻译： 单晶硅蚀刻方法包括提供其中具有至少一个沟槽的单晶硅衬底。 将衬底暴露于缓冲的氟化物蚀刻溶液，其在<100>方向图案化时，其将硅切割以提供横向搁板。 当沿<100>方向图案化时，所得结构包括底切特征。

公开(公告)号：US07604729B2

公开(公告)日：2009-10-20

申请号：US11585740

申请日：2006-10-23

申请人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

发明人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

IPC分类号： C25F3/16 ,  C25F7/00

CPC分类号： B24B37/12 ,  B23H3/00 ,  B23H3/02 ,  B23H5/08 ,  B24B37/046 ,  B24B37/30 ,  C25F3/14 ,  C25F7/00

摘要： Methods and apparatuses for selectively removing conductive materials from a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from an electrode pair that includes a first electrode and a second electrode spaced apart from the first electrode. An electrolytic liquid can be directed through a first flow passage to an interface region between the microelectronic substrate and the electrode pair. A varying electrical signal can be passed through the electrode pair and the electrolytic liquid to remove conductive material from the microelectronic substrate. The electrolytic liquid can be removed through a second flow passage proximate to the first flow passage and the electrode pair.

摘要翻译： 用于从微电子衬底选择性去除导电材料的方法和装置。 根据本发明的实施例的方法包括将微电子基板定位在靠近并与电极对间隔开的位置，电极对包括第一电极和与第一电极间隔开的第二电极。 电解液可以通过第一流动通道引导到微电子衬底和电极对之间的界面区域。 可以将变化的电信号通过电极对和电解液体以从微电子衬底去除导电材料。 可以通过靠近第一流动通道和电极对的第二流动通道去除电解液体。

公开(公告)号：US07588677B2

公开(公告)日：2009-09-15

申请号：US11451723

申请日：2006-06-12

申请人： Whonchee Lee ,  Scott G. Meikle ,  Scott E. Moore ,  Trung T. Doan

发明人： Whonchee Lee ,  Scott G. Meikle ,  Scott E. Moore ,  Trung T. Doan

IPC分类号： B23H5/06

CPC分类号： C25F7/00 ,  B23H5/08 ,  B24B37/042 ,  B24B37/046 ,  B24B37/20 ,  H01L21/32125

摘要： A method and apparatus for removing conductive material from a microelectronic substrate. In one embodiment, the method can include engaging a microelectronic substrate with a polishing surface of a polishing pad, electrically coupling a conductive material of the microelectronic substrate to a source of electrical potential, and oxidizing at least a portion of the conductive material by passing an electrical current through the conductive material from the source of electrical potential. For example, the method can include positioning first and second electrodes apart from a face surface of the microelectronic substrate and disposing an electrolytic fluid between the face surface and the electrodes with the electrodes in fluid communication with the electrolytic fluid. The method can further include removing the portion of conductive material from the microelectronic substrate by moving at least one of the microelectronic and the polishing pad relative to the other. Accordingly, metals such as platinum can be anisotropically removed from the microelectronic substrate. The characteristics of the metal removal can be controlled by controlling the characteristics of the electrical signal applied to the microelectronic substrate, and the characteristics of a liquid disposed between the microelectronic substrate and the polishing pad.

公开(公告)号：US07524410B2

公开(公告)日：2009-04-28

申请号：US10923441

申请日：2004-08-20

申请人： Whonchee Lee ,  Scott E. Moore ,  Brian A. Vaartstra

发明人： Whonchee Lee ,  Scott E. Moore ,  Brian A. Vaartstra

IPC分类号： C25F3/16 ,  C25F7/00 ,  C25D17/00

CPC分类号： B23H5/08 ,  B23H3/00 ,  B23H5/06 ,  B24B37/042 ,  C25F7/00

摘要： A method and apparatus for removing conductive material from a microelectronic substrate is disclosed. One method includes disposing an electrolytic liquid between a conductive material of a substrate and at least one electrode, with the electrolytic liquid having about 80% water or less. The substrate can be contacted with a polishing pad material, and the conductive material can be electrically coupled to a source of varying electrical signals via the electrolytic liquid and the electrode. The method can further include applying a varying electrical signal to the conductive material, moving at least one of the polishing pad material and the substrate relative to the other, and removing at least a portion of the conductive material while the electrolytic liquid is adjacent to the conductive material. By limiting/controlling the amount of water in the electrolytic liquid, an embodiment of the method can remove the conductive material with a reduced downforce.

摘要翻译： 公开了一种用于从微电子衬底去除导电材料的方法和装置。 一种方法包括在基板的导电材料和至少一个电极之间设置电解液，电解液具有约80％的水或更少的水。 衬底可以与抛光垫材料接触，并且导电材料可以经由电解液和电极电耦合到具有变化的电信号的源。 该方法可以进一步包括向导电材料施加变化的电信号，相对于另一个移动抛光垫材料和衬底中的至少一个，以及在电解液邻近该导电材料的同时移除至少一部分导电材料 导电材料。 通过限制/控制电解液中的水量，该方法的一个实施例可以以降低的下压力去除导电材料。