公开(公告)号：US20100270564A1

公开(公告)日：2010-10-28

申请号：US12832469

申请日：2010-07-08

申请人： Dae Yeon Kim ,  Young Sam Park

发明人： Dae Yeon Kim ,  Young Sam Park

IPC分类号： H01L33/48

CPC分类号： H01L33/58 ,  H01L33/46

摘要： The invention relates to an LED package having a large beam angle of light emitted from an LED, simplifying a shape of a lens and an assembly process, and to a backlight unit using the same. The LED package includes a housing with a seating recess formed therein and at least one LED seated in the seating recess. The LED package also includes a lens having a predetermined sag on an upper side thereof, covering an upper part of the LED. The LED package and the backlight unit using the same can emit light uniformly without bright spots formed in an output screen, uses a simpler shaped lens with an increased beam angle, and minimizes a color mixing region to achieve miniaturization.

摘要翻译： 本发明涉及一种LED封装，其具有从LED发射的大的光束角度，简化透镜的形状和组装过程，以及使用该LED封装的背光单元。 LED封装包括壳体，其具有形成在其中的座部凹部和位于座部凹部中的至少一个LED。 LED封装还包括在其上侧具有预定凹陷的透镜，覆盖LED的上部。 LED封装和使用该LED封装的背光单元可以均匀地发光而不会在输出屏幕中形成亮点，使用具有增大的光束角的更简单形状的透镜，并且使混色区域最小化以实现小型化。

公开(公告)号：US07771081B2

公开(公告)日：2010-08-10

申请号：US12497009

申请日：2009-07-02

申请人： Dae Yeon Kim ,  Young Sam Park

发明人： Dae Yeon Kim ,  Young Sam Park

IPC分类号： F21V8/00

CPC分类号： H01L33/58 ,  H01L33/46

摘要： The invention relates to an LED package having a large beam angle of light emitted from an LED, simplifying a shape of a lens and an assembly process, and to a backlight unit using the same. The LED package includes a housing with a seating recess formed therein and at least one LED seated in the seating recess. The LED package also includes a lens having a predetermined sag on an upper side thereof, covering an upper part of the LED. The LED package and the backlight unit using the same can emit light uniformly without bright spots formed in an output screen, uses a simpler shaped lens with an increased beam angle, and minimizes a color mixing region to achieve miniaturization.

摘要翻译： 本发明涉及一种LED封装，其具有从LED发射的大的光束角度，简化透镜的形状和组装过程，以及使用该LED封装的背光单元。 LED封装包括壳体，其具有形成在其中的座部凹部和位于座部凹部中的至少一个LED。 LED封装还包括在其上侧具有预定凹陷的透镜，覆盖LED的上部。 LED封装和使用该LED封装的背光单元可以均匀地发光而不会在输出屏幕中形成亮点，使用具有增大的光束角的更简单形状的透镜，并且使混色区域最小化以实现小型化。

公开(公告)号：US08197090B2

公开(公告)日：2012-06-12

申请号：US12832469

申请日：2010-07-08

申请人： Dae Yeon Kim ,  Young Sam Park

发明人： Dae Yeon Kim ,  Young Sam Park

IPC分类号： F21V5/04

CPC分类号： H01L33/58 ,  H01L33/46

摘要： The invention relates to an LED package having a large beam angle of light emitted from an LED, simplifying a shape of a lens and an assembly process, and to a backlight unit using the same. The LED package includes a housing with a seating recess formed therein and at least one LED seated in the seating recess. The LED package also includes a lens having a predetermined sag on an upper side thereof, covering an upper part of the LED. The LED package and the backlight unit using the same can emit light uniformly without bright spots formed in an output screen, uses a simpler shaped lens with an increased beam angle, and minimizes a color mixing region to achieve miniaturization.

摘要翻译： 本发明涉及一种LED封装，其具有从LED发射的大的光束角度，简化透镜的形状和组装过程，以及使用该LED封装的背光单元。 LED封装包括壳体，其具有形成在其中的座部凹部和位于座部凹部中的至少一个LED。 LED封装还包括在其上侧具有预定凹陷的透镜，覆盖LED的上部。 LED封装和使用该LED封装的背光单元可以均匀地发光而不会在输出屏幕中形成亮点，使用具有增大的光束角的更简单形状的透镜，并且使混色区域最小化以实现小型化。

公开(公告)号：US07581853B2

公开(公告)日：2009-09-01

申请号：US11594756

申请日：2006-11-09

申请人： Dae Yeon Kim ,  Young Sam Park

发明人： Dae Yeon Kim ,  Young Sam Park

IPC分类号： F21V5/04

CPC分类号： H01L33/58 ,  H01L33/46

摘要： The invention relates to an LED package having a large beam angle of light emitted from an LED, simplifying a shape of a lens and an assembly process, and to a backlight unit using the same. The LED package includes a housing with a seating recess formed therein and at least one LED seated in the seating recess. The LED package also includes a lens having a predetermined sag on an upper side thereof, covering an upper part of the LED. The LED package and the backlight unit using the same can emit light uniformly without bright spots formed in an output screen, uses a simpler shaped lens with an increased beam angle, and minimizes a color mixing region to achieve miniaturization.

摘要翻译： 本发明涉及一种LED封装，其具有从LED发射的大的光束角度，简化透镜的形状和组装过程，以及使用该LED封装的背光单元。 LED封装包括壳体，其具有形成在其中的座部凹部和位于座部凹部中的至少一个LED。 LED封装还包括在其上侧具有预定凹陷的透镜，覆盖LED的上部。 LED封装和使用该LED封装的背光单元可以均匀地发光而不会在输出屏幕中形成亮点，使用具有增大的光束角的更简单形状的透镜，并且使混色区域最小化以实现小型化。

公开(公告)号：US08926114B2

公开(公告)日：2015-01-06

申请号：US13098698

申请日：2011-05-02

申请人： Jung Kyu Park ,  Young Sam Park ,  Sung A Choi ,  Jeong Eun Lim ,  Jin Mo Kim ,  Man Ki Hong ,  Tae Heon Han ,  Churl Wung Shin ,  Young Taek Kim ,  Dae Woon Hong ,  Young Geun Jun ,  Jung Kyu Kook

发明人： Jung Kyu Park ,  Young Sam Park ,  Sung A Choi ,  Jeong Eun Lim ,  Jin Mo Kim ,  Man Ki Hong ,  Tae Heon Han ,  Churl Wung Shin ,  Young Taek Kim ,  Dae Woon Hong ,  Young Geun Jun ,  Jung Kyu Kook

IPC分类号： G09F13/04 ,  G09F13/08 ,  G02B19/00 ,  G02F1/1335 ,  H01L33/58

CPC分类号： F21V11/00 ,  F21K9/60 ,  F21Y2115/10 ,  G02B19/0014 ,  G02B19/0061 ,  G02B19/0071 ,  G02F1/133603 ,  G02F1/133606 ,  H01L33/58 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A light source module, a backlight unit, a display apparatus, a television set, and an illumination apparatus are provided. The light source module includes: one or more light source units including a light emitting element emitting light when electricity is applied thereto; and an optical sheet disposed above the light source units and exhibiting bidirectional transmittance distribution function characteristics having first and second peaks at radiation angles less than 0° and greater than 0°.

摘要翻译： 提供了光源模块，背光单元，显示装置，电视机和照明装置。 光源模块包括：一个或多个光源单元，包括当向其施加电力时发光的发光元件; 以及设置在光源单元上方并且在小于0°且大于0°的辐射角处具有第一和第二峰的双向透射分布函数特性的光学片。

公开(公告)号：US20130139864A1

公开(公告)日：2013-06-06

申请号：US13611189

申请日：2012-09-12

申请人： Younghoon Hyun ,  Moon Gyu Jang ,  Young Sam Park ,  Taehyoung Zyung ,  Yil Suk Yang ,  Jong-Kee Kwon

发明人： Younghoon Hyun ,  Moon Gyu Jang ,  Young Sam Park ,  Taehyoung Zyung ,  Yil Suk Yang ,  Jong-Kee Kwon

IPC分类号： H01L35/32 ,  H01L35/14 ,  H01L35/16 ,  B82Y99/00

CPC分类号： H01L35/32 ,  B82Y30/00

摘要： Provided is a thermoelectric device including two legs having a rough side surface and a smooth side surface facing each other. Phonons may be scattered by the rough side surface, thereby decreasing thermal conductivity of the device. Flowing paths for electrons and phonons may become different form each other, because of a magnetic field induced by an electric current passing through the legs. The smooth side surface may be used for the flowing path of electrons. As a result, in the thermoelectric device, thermal conductivity can be reduced and electric conductivity can be maintained.

摘要翻译： 提供一种热电装置，其包括具有粗糙侧表面和彼此面对的平滑侧表面的两个腿。 声子可能被粗糙的侧面散射，从而降低了装置的热导率。 电子和声子的流动路径可能由于由通过腿部的电流引起的磁场而彼此不同。 光滑的侧面可以用于电子的流动路径。 结果，在热电装置中，可以降低导热性并且可以保持导电性。

公开(公告)号：US07920413B2

公开(公告)日：2011-04-05

申请号：US12040137

申请日：2008-02-29

申请人： Byoung-Gon Yu ,  Byung-Do Yang ,  Seung-Yun Lee ,  Sung-Min Yoon ,  Young Sam Park ,  Nam Yeal Lee

发明人： Byoung-Gon Yu ,  Byung-Do Yang ,  Seung-Yun Lee ,  Sung-Min Yoon ,  Young Sam Park ,  Nam Yeal Lee

IPC分类号： G11C11/00

CPC分类号： G11C7/1006 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/0069 ,  G11C2013/0076 ,  G11C2211/5647

摘要： Provided are an apparatus and method for writing data to a phase-change random access memory (PRAM) by using writing power calculation and data inversion functions, and more particularly, an apparatus and method for writing data which can minimize power consumption by calculating the power consumed while input original data or inverted data is written to a PRAM and storing the data consuming less power. A PRAM consumes a significant amount of power in order to store data in a memory cell since a large electric current is required to flow for a long period of time. According to the present invention, since the PRAM consumes different amounts of power when writing data with a value of 0 and data with a value of 1, the power consumed when input original data is stored and the power consumed when the input original data is inverted and stored are compared to each other, the data with a smaller power consumption is stored when the data is written to the PRAM as a word unit, and thus the power consumption of the PRAM can be reduced.

摘要翻译： 提供了一种通过使用写入功率计算和数据反转功能将数据写入相变随机存取存储器（PRAM）的装置和方法，更具体地，涉及一种用于写入数据的装置和方法，该装置和方法可通过计算功率来最小化功耗 在输入原始数据或反相数据被写入PRAM并存储消耗较少功率的数据时消耗。 由于需要大电流长时间流动，所以PRAM消耗大量的功率以便将数据存储在存储单元中。 根据本发明，由于在写入值为0的数据和值为1的数据时，PRAM消耗不同的功率量，所以当输入原始数据被存储时消耗的功率和当输入的原始数据被反相时消耗的功率 并将其进行存储，将数据作为字单元写入PRAM时，存储具有较小功耗的数据，从而能够降低PRAM的功耗。

公开(公告)号：US07911227B2

公开(公告)日：2011-03-22

申请号：US12633731

申请日：2009-12-08

申请人： Byoung Gon Yu ,  Yong-Joo Kim ,  Sung Min Yoon ,  Seung-Yun Lee ,  Young Sam Park ,  Soonwon Jung

发明人： Byoung Gon Yu ,  Yong-Joo Kim ,  Sung Min Yoon ,  Seung-Yun Lee ,  Young Sam Park ,  Soonwon Jung

IPC分类号： G06F7/38 ,  H03K19/173

CPC分类号： H03K19/17784 ,  H03K19/17728 ,  H03K19/17792

摘要： Provided is a programmable logic block of a field-programmable gate array (FPGA). The programmable logic block includes a pull-up access transistor connected to a power source, an up-phase-change memory device connected to the pull-up access transistor, a down-phase-change memory device connected to the up-phase-change memory device, an output terminal between the up-phase-change memory device and the down-phase-change memory device, and a pull-down access transistor connected to the down-phase-change memory device and a ground. The resistance values of the up-phase-change memory device and the down-phase-change memory device are individually programmed.

摘要翻译： 提供了现场可编程门阵列（FPGA）的可编程逻辑块。 可编程逻辑块包括连接到电源的上拉访问晶体管，连接到上拉存取晶体管的上变相存储器件，连接到上变相存储晶体管的下变相存储器件 存储器件，上变相存储器件和下变相存储器件之间的输出端子以及连接到下变相存储器件和地的下拉存取晶体管。 上变相存储器件和下变相存储器件的电阻值被单独编程。

公开(公告)号：US07884347B2

公开(公告)日：2011-02-08

申请号：US12425152

申请日：2009-04-16

申请人： Sung Min Yoon ,  Byoung Gon Yu ,  Soon Won Jung ,  Seung Yun Lee ,  Young Sam Park ,  Joon Suk Lee

发明人： Sung Min Yoon ,  Byoung Gon Yu ,  Soon Won Jung ,  Seung Yun Lee ,  Young Sam Park ,  Joon Suk Lee

IPC分类号： H01L29/06

CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1683

摘要： A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer. The main operating region functioning as a memory operating region is formed of a Ge2Sb2+xTe5 phase-change material to ensure the stability of a memory operation, and simultaneously, the subsidiary regions formed of a Ge2Sb2Te5 phase-change material are disposed respectively on and under the Ge2Sb2+xTe5 main operating region to prevent leakage of thermal energy through an electrode, thereby reducing power consumption.

摘要翻译： 提供了相变材料层具有不同组成的多层结构的相变存储器件及其制造方法。 相变存储器件包括形成在基板上的第一电极层，形成在第一电极层上的加热电极层，形成在加热器电极层上并具有部分地暴露加热器电极层的孔的绝缘层， 形成为填充孔并且部分地接触加热器电极层的改变材料层和形成在相变材料层上的第二电极层。 作为存储器工作区域的主要工作区域由Ge2Sb2 + xTe5相变材料形成，以确保存储器操作的稳定性，同时由Ge2Sb2Te5相变材料形成的辅助区域分别设置在其上 Ge2Sb2 + xTe5主要工作区域，以防止热能通过电极泄漏，从而降低功耗。

公开(公告)号：US20080135825A1

公开(公告)日：2008-06-12

申请号：US11936503

申请日：2007-11-07

申请人： Seung Yun Lee ,  Sung Min Yoon ,  Nam-Yeal Lee ,  Young Sam Park ,  Byoung Gon Yu

发明人： Seung Yun Lee ,  Sung Min Yoon ,  Nam-Yeal Lee ,  Young Sam Park ,  Byoung Gon Yu

IPC分类号： H01L47/00 ,  H01L21/8239

CPC分类号： H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1666

摘要： Provided are a phase-change memory device and a method of fabricating the same. The phase-change memory device includes a transistor disposed on a semiconductor substrate and including a gate electrode and first and second impurity regions disposed on both sides of the gate electrode; a bit line electrically connected to the first impurity region; and a phase-change resistor electrically connected to the second impurity region, wherein the phase-change resistor includes: a lower electrode formed of a doped SiGe layer; a phase-change layer contacting the lower electrode; and an upper electrode connected to the phase-change layer. The lower electrode is formed of the doped SiGe layer, which has a high resistivity and a low thermal conductivity, thereby reducing a reset current and the power consumption of the entire phase-change memory device.

摘要翻译： 提供了一种相变存储器件及其制造方法。 相变存储器件包括设置在半导体衬底上的晶体管，包括栅电极和设置在栅电极两侧的第一和第二杂质区; 电连接到第一杂质区的位线; 以及电连接到所述第二杂质区的相变电阻器，其中所述相变电阻器包括：由掺杂的SiGe层形成的下电极; 与下电极接触的相变层; 以及连接到所述相变层的上电极。 下电极由掺杂的SiGe层形成，其具有高电阻率和低热导率，从而降低整个相变存储器件的复位电流和功耗。