Plasma etching method and plasma etching unit
    61.
    发明申请
    Plasma etching method and plasma etching unit 审中-公开
    等离子体蚀刻方法和等离子体蚀刻单元

    公开(公告)号:US20050039854A1

    公开(公告)日:2005-02-24

    申请号:US10959585

    申请日:2004-10-07

    IPC分类号: H01L21/3065 C23F1/00

    摘要: The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having a silicon film and an inorganic-material film adjacent to the silicon film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the silicon film of the substrate by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.

    摘要翻译: 本发明是一种等离子体蚀刻方法,包括:将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤,基板 具有与硅膜相邻的硅膜和无机材料膜; 以及蚀刻步骤,向所述电极中的至少一个施加高频电力,以在所述一对电极之间形成高频电场,将处理气体供应到所述室中以形成所述处理气体的等离子体,以通过 电场的方法,通过等离子体选择性地等离子体蚀刻衬底的硅膜; 其中在所述蚀刻步骤中施加到所述至少一个所述电极的所述高频电力的频率为50〜150MHz。

    Deflection yoke and color cathode ray tube comprising the deflection yoke
    62.
    发明授权
    Deflection yoke and color cathode ray tube comprising the deflection yoke 失效
    偏转线圈和包括偏转线圈的彩色阴极射线管

    公开(公告)号:US5986397A

    公开(公告)日:1999-11-16

    申请号:US28224

    申请日:1998-02-23

    IPC分类号: H01J29/76

    CPC分类号: H01J29/762 H01J2229/7032

    摘要: The present invention discloses a color cathode ray tube and a deflection yoke. In accordance with the present invention the color cathode ray tube has a color cathode ray tube main body. The main body has a glass panel portion and a glass funnel portion connected to a rear part of the glass panel portion. An electron gun is located at rear part of the color cathode ray tube main body. The color cathode ray tube also has a deflection yoke. The deflection yoke has a saddle shaped horizontal deflection coil located at a rear periphery of the color cathode ray tube main body, a saddle shaped vertical deflection coil located outside the saddle shaped horizontal deflection coil, and a core located outside the saddle shaped vertical deflection coil. The center portion of the screen side flange portion of either the horizontal deflection coil or the vertical deflection coil forms a dent toward the electron gun side.

    摘要翻译: 本发明公开了一种彩色阴极射线管和偏转线圈。 根据本发明,彩色阴极射线管具有彩色阴极射线管主体。 主体具有玻璃面板部分和连接到玻璃面板部分的后部的玻璃漏斗部分。 电子枪位于彩色阴极射线管主体的后部。 彩色阴极射线管还具有偏转线圈。 偏转线圈具有位于彩色阴极射线管主体的后周边的鞍形水平偏转线圈,位于鞍形水平偏转线圈外侧的鞍形垂直偏转线圈和位于鞍形垂直偏转线圈外侧的芯 。 水平偏转线圈或垂直偏转线圈的屏幕侧凸缘部分的中心部分形成朝向电子枪侧的凹陷。

    Deflection yoke and color cathode ray tube comprising the deflection yoke
    63.
    发明授权
    Deflection yoke and color cathode ray tube comprising the deflection yoke 失效
    偏转线圈和包括偏转线圈的彩色阴极射线管

    公开(公告)号:US5982087A

    公开(公告)日:1999-11-09

    申请号:US27543

    申请日:1998-02-23

    IPC分类号: H01J29/76

    CPC分类号: H01J29/762 H01J2229/7032

    摘要: The present invention discloses a color cathode ray tube and a deflection yoke. In accordance with the present invention the color cathode ray tube has a color cathode ray tube main body. The main body has a glass panel portion and a glass funnel portion connected to a rear part of the glass panel portion. An electron gun is located at the rear part of the color cathode ray tube main body. The color cathode ray tube also has a deflection yoke. The deflection yoke has a saddle shaped horizontal deflection coil located at a rear periphery of the color cathode ray tube main body, a saddle shaped vertical deflection coil located outside the saddle shaped horizontal deflection coil, and a core located outside the saddle shaped vertical deflection coil. A screen side flange portion of the horizontal deflection coil or the vertical deflection coil form a projection toward the screen side. The surface of the screen side flange portion of the horizontal deflection coil or the vertical deflection coil opposing the glass funnel portion of the color cathode ray tube conforms to the surface of the glass funnel portion.

    摘要翻译: 本发明公开了一种彩色阴极射线管和偏转线圈。 根据本发明,彩色阴极射线管具有彩色阴极射线管主体。 主体具有玻璃面板部分和连接到玻璃面板部分的后部的玻璃漏斗部分。 电子枪位于彩色阴极射线管主体的后部。 彩色阴极射线管还具有偏转线圈。 偏转线圈具有位于彩色阴极射线管主体的后周边的鞍形水平偏转线圈,位于鞍形水平偏转线圈外侧的鞍形垂直偏转线圈和位于鞍形垂直偏转线圈外侧的芯 。 水平偏转线圈或垂直偏转线圈的屏幕侧凸缘部分形成朝向屏幕侧的突起。 与彩色阴极射线管的玻璃漏斗部分相对的水平偏转线圈或垂直偏转线圈的屏幕侧凸缘部分的表面符合玻璃漏斗部分的表面。

    Color cathode ray tube with decenterable magnetic body
    64.
    发明授权
    Color cathode ray tube with decenterable magnetic body 失效
    彩色阴极射线管,带有可靠的磁性体

    公开(公告)号:US5757120A

    公开(公告)日:1998-05-26

    申请号:US733402

    申请日:1996-10-18

    IPC分类号: H01J29/76 H01J29/74

    CPC分类号: H01J29/76 H01J2229/7031

    摘要: A color cathode ray tube device is provided in which the generation of the trapezoidal distortion of a rectangular raster is controlled and an off-axis misconvergence is corrected to obtain high image quality in the peripheral portion of a screen. An annular ferrite core is provided adjacently to the electron gun side end face of a ferrite core of a deflection yoke so as to b decentered radially within the predetermined range around the central axis of the deflection yoke in the tube axial direction. An asymmetric magnetic field is formed on the electron gun side of the deflection yoke by the annular ferrite core which has been decentered. Thus, the off-axis misconvergence can be corrected while controlling the generation of the trapezoidal distortion.

    摘要翻译: 提供了一种彩色阴极射线管装置,其中控制矩形光栅的梯形失真的产生,并且校正离轴失会聚以在屏幕的周边部分中获得高图像质量。 与偏转线圈的铁氧体磁心的电子枪侧端面相邻设置有环状的铁氧体磁芯,从而沿着管轴方向偏心偏转在偏转线圈的中心轴线附近的规定范围内。 通过已经偏心的环形铁氧体磁心,在偏转线圈的电子枪侧形成非对称磁场。 因此,可以在控制梯形失真的产生的同时校正离轴失会聚。

    Cathode ray tube displays having saddle-type deflecting coils
    65.
    发明授权
    Cathode ray tube displays having saddle-type deflecting coils 失效
    阴极射线管显示有鞍型偏转线圈

    公开(公告)号:US5668436A

    公开(公告)日:1997-09-16

    申请号:US692231

    申请日:1996-08-07

    摘要: A cathode ray tube display which can reduce the temperature rise of its deflection yoke, not by using either extra-fine wires or litz wires but by increasing the heat radiation of its saddle-type coils, is provided. A deflection yoke arranged in the rear periphery of a cathode ray tube display main body includes a saddle-type horizontal deflection coil, an insulating frame located outside of the saddle-type horizontal deflection coil, a saddle-type vertical deflection coil and a ferrite core located outside the insulating frame. The surface of the saddle-type horizontal deflection coil is partially exposed from the screen-side end face of the ferrite core toward the screen, and the surface area of the exposed part is predetermined to be from 100 to 298 cm.sup.2. Similarly, the exposed surface area of the saddle-type vertical deflection coil is predetermined to be from 55 to 185 cm.sup.2.

    摘要翻译: 本发明提供一种阴极射线管显示器,它可以减少其偏转线圈的温度升高,而不是通过使用超细线或绞合线,而是通过增加其鞍型线圈的散热。 布置在阴极射线管显示器主体的后周边的偏转线圈包括鞍形水平偏转线圈,位于鞍型水平偏转线圈外侧的绝缘框架,鞍形垂直偏转线圈和铁氧体磁芯 位于绝缘框架外部。 鞍型水平偏转线圈的表面部分地从铁氧体磁心的屏幕侧端面向屏幕露出,露出部分的表面面积被预先确定为100至298cm 2。 类似地,鞍型垂直偏转线圈的暴露的表面积被预先确定为55至185cm 2。

    Plasma processing method and plasma processing apparatus
    68.
    发明授权
    Plasma processing method and plasma processing apparatus 有权
    等离子体处理方法和等离子体处理装置

    公开(公告)号:US08545671B2

    公开(公告)日:2013-10-01

    申请号:US13076907

    申请日:2011-03-31

    申请人: Masanobu Honda

    发明人: Masanobu Honda

    IPC分类号: C23F1/00 H01L21/306 C23C16/00

    摘要: A plasma processing apparatus for generating a plasma in a plasma processing space in a processing chamber and plasma-processing a target object includes a plasma-exciting high frequency power supply for applying a plasma-exciting high frequency power. Further, the plasma processing apparatus includes at least one of a potential-controlling high frequency power supply for applying a potential-controlling high frequency power having a frequency lower than that of the plasma-exciting high frequency power and a DC power supply for applying a DC voltage; and a mounting table for mounting thereon a target object. Furthermore, the plasma processing apparatus includes an auxiliary electrode, provided at a position outer side of the target object mounted on the mounting table while facing the mounting table, connected to at least one of the potential-controlling high frequency power supply and the DC power supply.

    摘要翻译: 一种用于在处理室中的等离子体处理空间中产生等离子体并等离子体处理目标物体的等离子体处理装置包括用于施加等离子体激发高频功率的等离子体激发高频电源。 此外,等离子体处理装置包括用于施加频率低于等离子体激发高频功率的电位控制高频电力的电位控制高频电源和用于施加等离子体激发高频电力的直流电源中的至少一个 直流电压; 以及用于在其上安装目标物体的安装台。 此外,等离子体处理装置包括辅助电极,其设置在安装在安装台上的目标物体的位于外部的面对安装台的位置,与至少一个电位控制高频电源和DC电力 供应。

    Plasma processing apparatus and method, and storage medium
    69.
    发明授权
    Plasma processing apparatus and method, and storage medium 有权
    等离子体处理装置和方法以及存储介质

    公开(公告)号:US08440050B2

    公开(公告)日:2013-05-14

    申请号:US12372156

    申请日:2009-02-17

    IPC分类号: C23F1/00 H01L21/306 G06F19/00

    摘要: A plasma processing apparatus includes a vacuum evacuable processing chamber, a first electrode divided into an outer electrode and an inner electrode, a second electrode, a first and a second high frequency power application unit for applying to the second electrode a first and a second high frequency power having a relatively high frequency and a relatively low frequency, respectively, a first and a second DC voltage application circuit apply a DC voltage to the outer and the inner electrode, respectively, and a processing gas supply unit. A space between the first electrode and the second electrode serves as a plasma generation space, and frequency-impedance characteristics of the outer electrode are set such that the impedance increases at the frequency of the second high frequency power and decreases at the frequency of the first high frequency power as the DC voltage applied to the outer electrode increases.

    摘要翻译: 等离子体处理装置包括真空排气处理室,分为外部电极和内部电极的第一电极,第二电极,第一和第二高频电力施加单元,用于向第二电极施加第一和第二高电平 第一和第二直流电压施加电路分别对外电极和内电极分别施加直流电压和处理气体供给单元。 第一电极和第二电极之间的空间用作等离子体产生空间,外部电极的频率阻抗特性被设定为使得阻抗在第二高频功率的频率下增加,并且在第一 随着施加到外部电极的DC电压的增加,高频功率增加。

    Dry etching method
    70.
    发明授权
    Dry etching method 有权
    干蚀刻法

    公开(公告)号:US08293655B2

    公开(公告)日:2012-10-23

    申请号:US12558379

    申请日:2009-09-11

    IPC分类号: H01L21/302

    摘要: In a dry etching method, a silicon substrate is mounted on an electrode arranged in a processing chamber; a plasma is generated by discharging an etching gas in the processing chamber; a radio frequency power for attracting ions from the plasma is supplied to the electrode; and the silicon substrate is etched by the plasma. A pressure inside the processing chamber is set as 1 mTorr to 100 mTorr, and the etching is carried out while satisfying the following equation: yM≧2.84*10−3x+0.28, where yM is a power density of the radio frequency power per unit area of the electrode and x is the pressure inside the processing chamber.

    摘要翻译: 在干蚀刻方法中,将硅基板安装在布置在处理室中的电极上; 通过在处理室中排出蚀刻气体而产生等离子体; 将用于从等离子体吸引离子的射频功率供给到电极; 并且通过等离子体蚀刻硅衬底。 处理室内的压力设定为1mTorr至100mTorr,并且在满足以下等式的同时执行蚀刻:yM≥2.84×10-3×+ 0.28,其中yM是每单位的射频功率的功率密度 电极的面积,x是处理室内的压力。