摘要:
The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having a silicon film and an inorganic-material film adjacent to the silicon film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the silicon film of the substrate by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
摘要:
The present invention discloses a color cathode ray tube and a deflection yoke. In accordance with the present invention the color cathode ray tube has a color cathode ray tube main body. The main body has a glass panel portion and a glass funnel portion connected to a rear part of the glass panel portion. An electron gun is located at rear part of the color cathode ray tube main body. The color cathode ray tube also has a deflection yoke. The deflection yoke has a saddle shaped horizontal deflection coil located at a rear periphery of the color cathode ray tube main body, a saddle shaped vertical deflection coil located outside the saddle shaped horizontal deflection coil, and a core located outside the saddle shaped vertical deflection coil. The center portion of the screen side flange portion of either the horizontal deflection coil or the vertical deflection coil forms a dent toward the electron gun side.
摘要:
The present invention discloses a color cathode ray tube and a deflection yoke. In accordance with the present invention the color cathode ray tube has a color cathode ray tube main body. The main body has a glass panel portion and a glass funnel portion connected to a rear part of the glass panel portion. An electron gun is located at the rear part of the color cathode ray tube main body. The color cathode ray tube also has a deflection yoke. The deflection yoke has a saddle shaped horizontal deflection coil located at a rear periphery of the color cathode ray tube main body, a saddle shaped vertical deflection coil located outside the saddle shaped horizontal deflection coil, and a core located outside the saddle shaped vertical deflection coil. A screen side flange portion of the horizontal deflection coil or the vertical deflection coil form a projection toward the screen side. The surface of the screen side flange portion of the horizontal deflection coil or the vertical deflection coil opposing the glass funnel portion of the color cathode ray tube conforms to the surface of the glass funnel portion.
摘要:
A color cathode ray tube device is provided in which the generation of the trapezoidal distortion of a rectangular raster is controlled and an off-axis misconvergence is corrected to obtain high image quality in the peripheral portion of a screen. An annular ferrite core is provided adjacently to the electron gun side end face of a ferrite core of a deflection yoke so as to b decentered radially within the predetermined range around the central axis of the deflection yoke in the tube axial direction. An asymmetric magnetic field is formed on the electron gun side of the deflection yoke by the annular ferrite core which has been decentered. Thus, the off-axis misconvergence can be corrected while controlling the generation of the trapezoidal distortion.
摘要:
A cathode ray tube display which can reduce the temperature rise of its deflection yoke, not by using either extra-fine wires or litz wires but by increasing the heat radiation of its saddle-type coils, is provided. A deflection yoke arranged in the rear periphery of a cathode ray tube display main body includes a saddle-type horizontal deflection coil, an insulating frame located outside of the saddle-type horizontal deflection coil, a saddle-type vertical deflection coil and a ferrite core located outside the insulating frame. The surface of the saddle-type horizontal deflection coil is partially exposed from the screen-side end face of the ferrite core toward the screen, and the surface area of the exposed part is predetermined to be from 100 to 298 cm.sup.2. Similarly, the exposed surface area of the saddle-type vertical deflection coil is predetermined to be from 55 to 185 cm.sup.2.
摘要:
An actuator for a magnetic disk device causes movement of a magnetic head in the radial direction of a rotating magnetic disk. Although this magnetic head is floated above the magnetic disk by a stream of air induced by the rotation of the magnetic disk at a high speed, an excessively high velocity of the air stream causes excessive vibrations of a soft gimbal resiliently supporting the magnetic head. In the actuator of the present invention, a head arm supporting the magnetic head through the gimbal is formed with a wind-breaking projection preventing direct impingement of the air stream against the gimbal and magnetic head, thereby minimizing vibrations of the gimbal and magnetic head.
摘要:
A cleaning substrate that can prevent a decrease in the operating rate of a substrate processing apparatus. The cleaning substrate that cleans the interior of a chamber in the substrate processing apparatus has a removal mechanism that removes foreign matter in the chamber.
摘要:
A plasma processing apparatus for generating a plasma in a plasma processing space in a processing chamber and plasma-processing a target object includes a plasma-exciting high frequency power supply for applying a plasma-exciting high frequency power. Further, the plasma processing apparatus includes at least one of a potential-controlling high frequency power supply for applying a potential-controlling high frequency power having a frequency lower than that of the plasma-exciting high frequency power and a DC power supply for applying a DC voltage; and a mounting table for mounting thereon a target object. Furthermore, the plasma processing apparatus includes an auxiliary electrode, provided at a position outer side of the target object mounted on the mounting table while facing the mounting table, connected to at least one of the potential-controlling high frequency power supply and the DC power supply.
摘要:
A plasma processing apparatus includes a vacuum evacuable processing chamber, a first electrode divided into an outer electrode and an inner electrode, a second electrode, a first and a second high frequency power application unit for applying to the second electrode a first and a second high frequency power having a relatively high frequency and a relatively low frequency, respectively, a first and a second DC voltage application circuit apply a DC voltage to the outer and the inner electrode, respectively, and a processing gas supply unit. A space between the first electrode and the second electrode serves as a plasma generation space, and frequency-impedance characteristics of the outer electrode are set such that the impedance increases at the frequency of the second high frequency power and decreases at the frequency of the first high frequency power as the DC voltage applied to the outer electrode increases.
摘要:
In a dry etching method, a silicon substrate is mounted on an electrode arranged in a processing chamber; a plasma is generated by discharging an etching gas in the processing chamber; a radio frequency power for attracting ions from the plasma is supplied to the electrode; and the silicon substrate is etched by the plasma. A pressure inside the processing chamber is set as 1 mTorr to 100 mTorr, and the etching is carried out while satisfying the following equation: yM≧2.84*10−3x+0.28, where yM is a power density of the radio frequency power per unit area of the electrode and x is the pressure inside the processing chamber.