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公开(公告)号：US08647442B2
公开(公告)日：2014-02-11
申请号：US13454695
申请日：2012-04-24
申请人： Yohei Yamazawa , Hiroshi Nagaike , Masashi Saito , Masanobu Honda
发明人： Yohei Yamazawa , Hiroshi Nagaike , Masashi Saito , Masanobu Honda
CPC分类号： C11D17/049 , B08B1/00 , B08B9/08 , C23C16/4401 , H01J37/32862
摘要： A cleaning substrate that can prevent a decrease in the operating rate of a substrate processing apparatus. The cleaning substrate that cleans the interior of a chamber in the substrate processing apparatus has a removal mechanism that removes foreign matter in the chamber.
摘要翻译： 一种能够防止基板处理装置的运转率降低的清洗基板。 清洁基板处理装置中的室内部的清洁基板具有去除腔室中的异物的去除机构。
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公开(公告)号：US20090241992A1
公开(公告)日：2009-10-01
申请号：US12408888
申请日：2009-03-23
申请人： Yohei Yamazawa , Hiroshi Nagaike , Masashi Saito , Masanobu Honda
发明人： Yohei Yamazawa , Hiroshi Nagaike , Masashi Saito , Masanobu Honda
CPC分类号： C11D17/049 , B08B1/00 , B08B9/08 , C23C16/4401 , H01J37/32862
摘要： A cleaning substrate that can prevent a decrease in the operating rate of a substrate processing apparatus. The cleaning substrate that cleans the interior of a chamber in the substrate processing apparatus has a removal mechanism that removes foreign matter in the chamber.
摘要翻译： 一种能够防止基板处理装置的运转率降低的清洗基板。 清洁基板处理装置中的室内部的清洁基板具有去除腔室中的异物的去除机构。
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公开(公告)号：US09627184B2
公开(公告)日：2017-04-18
申请号：US12960064
申请日：2010-12-03
CPC分类号： H01J37/32862 , H01J37/3244 , H01J37/32449
摘要： A plasma processing apparatus includes a processing chamber, in which a wafer W is plasma-processed, and a CPU controlling an operation of each component. A processing gas is introduced into the processing chamber under a first condition defined by a flow rate and a molecular weight of the processing gas, specifically based on a magnitude of a product A1 (=Q1×m1) of the flow rate Q1 and the molecular weight m1 of the processing gas, and a surface of the wafer W is physically or chemically etched. And then, a pre-purge gas which may be identical to or different from the processing gas is introduced into the processing chamber through a shower head under a second condition derived from the first condition.
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公开(公告)号：US07780786B2
公开(公告)日：2010-08-24
申请号：US10722602
申请日：2003-11-28
CPC分类号： H05H1/24 , C23C16/4404 , H01J37/32477 , Y10T428/249969 , Y10T428/24997 , Y10T428/31544 , Y10T428/31663 , Y10T428/31721
摘要： An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.
摘要翻译： 等离子体处理容器的内部构件包括基材和通过在基材的表面上热喷涂陶瓷而形成的膜。 该膜由包括选自B，Mg，Al，Si，Ca，Cr，Y，Zr，Ta，Ce和Nd中的至少一种元素的陶瓷形成。 此外，膜的至少一部分被树脂密封。
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公开(公告)号：US07651586B2
公开(公告)日：2010-01-26
申请号：US10920367
申请日：2004-08-18
申请人： Tsuyoshi Moriya , Hiroshi Nagaike
发明人： Tsuyoshi Moriya , Hiroshi Nagaike
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/32431 , C23C16/4401 , H01J2237/022
摘要： A particle removal apparatus for removing particles from a chamber of a plasma processing apparatus, wherein the chamber is connected to a gas exhaust port and a plasma of a processing gas is generated in the chamber to plasma process a substrate to be processed, includes a particle charging control member for positively charging particles generated within the chamber by positive ions of an ion sheath region formed in a region other than the vicinity of the substrate to be processed, wherein positively charged particles are discharged from the chamber via the gas exhaust port. Therefore, there is no plasma disturbance or metal contamination, and thus can be applied to a practical use.
摘要翻译： 一种用于从等离子体处理装置的室中除去颗粒的颗粒去除装置，其中所述室连接到排气口，并且在所述室中产生处理气体的等离子体，以等离子体处理待处理的基板，包括颗粒 充电控制构件，用于通过形成在除被处理基板附近的区域中的离子鞘区域的正离子正向地对室内产生的颗粒进行充电，其中带正电的颗粒经由排气口从室排出。 因此，没有等离子体干扰或金属污染，因此可以应用于实际应用。
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公开(公告)号：US20060210469A1
公开(公告)日：2006-09-21
申请号：US11376162
申请日：2006-03-16
摘要： A method for removing water molecules from a vacuum chamber for carrying out a process on a target object in vacuum includes the steps of introducing into the vacuum chamber a water molecule removal gas including at least a reduction gas which reduces the water molecules to produce hydrogen molecules and a halogen-based gas which reacts with the produced hydrogen molecules to produce acid, exhausting gases in the vacuum chamber measuring an amount of water molecules present inside the vacuum chamber, and determining whether or not the measured amount of water molecules is greater than or equal to a threshold value, wherein if the measured amount of water molecules is greater than or equal to the threshold value, the water molecule removal gas is introduced into the vacuum chamber in the introducing step.
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7.发明授权Substrate processing apparatus, program for performing operation and control method thereof, and computer readable storage medium storing the program 有权衬底处理装置，用于执行其操作和控制方法的程序以及存储程序的计算机可读存储介质公开(公告)号：US08172949B2
公开(公告)日：2012-05-08
申请号：US12718699
申请日：2010-03-05
申请人： Tomoyuki Kudo , Jun Ozawa , Hiroshi Nakamura , Kazunori Kazama , Tsuyoshi Moriya , Hiroyuki Nakayama , Hiroshi Nagaike
发明人： Tomoyuki Kudo , Jun Ozawa , Hiroshi Nakamura , Kazunori Kazama , Tsuyoshi Moriya , Hiroyuki Nakayama , Hiroshi Nagaike
IPC分类号： C23C16/00 , C23F1/00 , B65G21/677 , H01L21/306
CPC分类号： H01L21/67201 , H01L21/67017 , H01L21/67253 , H01L21/67748 , Y10S414/135 , Y10S414/139
摘要： A computer readable storage medium storing a program for performing an operation method of a substrate processing apparatus is provided. The operation method includes the steps of introducing a nonreactive gas into the vacuum preparation chamber before the gate valve is opened while the substrate is transferred between the vacuum preparation chamber of the vacuum processing unit and the transfer unit, stopping introducing the nonreactive gas when an inner pressure of the vacuum preparation chamber becomes same as an atmospheric pressure, starting an evacuation process of the corrosive gas in the vacuum preparation chamber and then opening to atmosphere performed by letting the vacuum preparation chamber communicate with an atmosphere, and opening the gate valve after the step of opening to atmosphere.
摘要翻译： 提供一种存储用于执行基板处理装置的操作方法的程序的计算机可读存储介质。 操作方法包括以下步骤：在基板在真空处理单元的真空处理室和转印单元的真空准备室之间转移时，在闸阀打开之前将非反应性气体引入真空准备室中，当内部 真空制备室的压力与大气压力相同，开始真空制备室中的腐蚀性气体的抽空处理，然后通过使真空制备室与大气连通而进入大气，并在该真空制备室之后打开闸阀 向大气开放的一步。
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公开(公告)号：US08052798B2
公开(公告)日：2011-11-08
申请号：US12632559
申请日：2009-12-07
申请人： Tsuyoshi Moriya , Hiroshi Nagaike
发明人： Tsuyoshi Moriya , Hiroshi Nagaike
IPC分类号： B08B6/00
CPC分类号： H01J37/32431 , C23C16/4401 , H01J2237/022
摘要： A particle removal apparatus for removing particles from a chamber of a plasma processing apparatus, wherein the chamber is connected to a gas exhaust port and a plasma of a processing gas is generated in the chamber to plasma process a substrate to be processed, includes a particle charging control member for positively charging particles generated within the chamber by positive ions of an ion sheath region formed in a region other than the vicinity of the substrate to be processed, wherein positively charged particles are discharged from the chamber via the gas exhaust port. Therefore, there is no plasma disturbance or metal contamination, and thus can be applied to a practical use.
摘要翻译： 一种用于从等离子体处理装置的室中除去颗粒的颗粒去除装置，其中所述室连接到排气口，并且在所述室中产生处理气体的等离子体，以等离子体处理待处理的基板，包括颗粒 充电控制构件，用于通过形成在除被处理基板附近的区域中的离子鞘区域的正离子正向地对室内产生的颗粒进行充电，其中带正电的颗粒经由排气口从室排出。 因此，没有等离子体干扰或金属污染，因此可以应用于实际应用。
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9.发明授权公开(公告)号：US08043971B2
公开(公告)日：2011-10-25
申请号：US12340256
申请日：2008-12-19
IPC分类号： H01L21/302
CPC分类号： H01J37/32642 , H01J37/32706 , H01L21/67069
摘要： [Problem to be Solved] In a plasma processing apparatus for executing a process using plasma, promoting the sharing of an apparatus in executing a plurality of different processes and plasma states amongst apparatuses in executing same processes in a plurality of apparatuses are provided.[Solution] A ring member formed of an insulating material is disposed to surround a to-be-treated substrate in a processing vessel and an electrode is installed in the ring member for adjusting a plasma sheath region. For example, a first DC voltage is applied to the electrode when a first process is performed on the to-be-treated substrate and a second DC voltage is applied to the electrode when a second process is performed on the to-be-treated substrate. In this case, the plasma state can be matched by applying an appropriate DC voltage according to each process or each apparatus executing the same process. Therefore, the sharing of an apparatus can be promoted and the plasma state can be readily adjusted.
摘要翻译： [待解决的问题]在用于执行使用等离子体的处理的等离子体处理装置中，提供了在执行多个装置中的相同处理的装置中执行多个不同处理和等离子体状态的共享的装置。 [解决方案]由绝缘材料形成的环形构件设置成围绕处理容器中的待处理衬底，并且电极安装在用于调整等离子体鞘区域的环构件中。 例如，当在待处理的基板上执行第一工艺时，将第一直流电压施加到电极，并且当对待处理的基板执行第二工艺时，向电极施加第二直流电压 。 在这种情况下，可以通过根据每个处理或执行相同处理的每个装置施加适当的DC电压来匹配等离子体状态。 因此，可以促进装置的共享，并且可以容易地调整等离子体状态。
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公开(公告)号：US20110216318A1
公开(公告)日：2011-09-08
申请号：US13036152
申请日：2011-02-28
申请人： Hiroshi Nagaike
发明人： Hiroshi Nagaike
IPC分类号： G01N21/00
CPC分类号： G01N21/00
摘要： There is provided a particle number measurement method capable of accurately measuring the number of particles generated by a specific factor. When the number of particles is measured by irradiating laser beam 25 into a main exhaust line 16 via a glass window 24, receiving lights (L1 and L2) scattered from particles (P1 and P2) crossing with the laser beam 25 by a photodetector 21, and calculating the number of particles based on the received scattered light, static particles P2 are considered as contaminants attached to the glass window 24 and the number of static particles P2 is subtracted from the measured number of particles within the main exhaust line 16.
摘要翻译： 提供了能够精确地测定由特定因子产生的粒子数的粒子数测定方法。 当通过玻璃窗24将激光束25照射到主排气管线16中来测量粒子的数量时，接收到由激光束25与光电检测器21交叉的颗粒（P1和P2）散射的光（L1和L2） 并且基于接收到的散射光计算颗粒数，静态颗粒P2被认为是附着到玻璃窗24的污染物，并且从主排气管线16内的测量的颗粒数量中减去静态颗粒P2的数量。
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