公开(公告)号：US20120292730A1

公开(公告)日：2012-11-22

申请号：US13112755

申请日：2011-05-20

申请人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Wen-De Wang ,  Yueh-Chiou Lin

发明人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Wen-De Wang ,  Yueh-Chiou Lin

IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L31/0224

CPC分类号： H01L23/5226 ,  H01L21/76898 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device including a device substrate having a front side and a back side. The semiconductor device further includes an interconnect structure disposed on the front side of the device substrate, the interconnect structure having a n-number of metal layers. The semiconductor device also includes a bonding pad disposed on the back side of the device substrate, the bonding pad extending through the interconnect structure and directly contacting the nth metal layer of the n-number of metal layers.

摘要翻译： 一种半导体器件，包括具有正面和背面的器件基板。 半导体器件还包括设置在器件基板的前侧的互连结构，该互连结构具有n个金属层。 半导体器件还包括设置在器件衬底的背面上的接合焊盘，焊盘延伸穿过互连结构并直接接触n个金属层的第n个金属层。

公开(公告)号：US20120205730A1

公开(公告)日：2012-08-16

申请号：US13026994

申请日：2011-02-14

申请人： Szu-Ying Chen ,  Pao-Tung Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

发明人： Szu-Ying Chen ,  Pao-Tung Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H01L31/113 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/1461 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides an image sensor device and a method of forming the image sensor device. In an example, an image sensor device includes a substrate having a front surface and a back surface; a sensor element disposed at the front surface of the substrate, the sensor element being operable to sense radiation projected toward the back surface of the substrate; and a transparent conductive layer disposed over the back surface of the substrate, the transparent conductive layer at least partially overlying the sensor element. The transparent conductive layer is configured for being electrically coupled to a bottom portion of the sensor element.

摘要翻译： 本公开提供了一种图像传感器装置和形成图像传感器装置的方法。 在一个示例中，图像传感器装置包括具有前表面和后表面的基板; 设置在所述基板的前表面处的传感器元件，所述传感器元件可操作以感测朝向所述基板的后表面投射的辐射; 以及设置在所述基板的所述背面上方的透明导电层，所述透明导电层至少部分地覆盖所述传感器元件。 透明导电层被配置为电耦合到传感器元件的底部。

公开(公告)号：US20120038028A1

公开(公告)日：2012-02-16

申请号：US12938272

申请日：2010-11-02

申请人： Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Wen-De Wang ,  Shu-Ting Tsai

发明人： Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Wen-De Wang ,  Shu-Ting Tsai

IPC分类号： H01L23/02 ,  H01L21/71

CPC分类号： H01L21/78 ,  H01L23/3157 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/00

摘要： The present disclosure provides a method of fabricating a semiconductor device, the method including providing a substrate having a seal ring region and a circuit region, forming a first seal ring structure over the seal ring region, forming a second seal ring structure over the seal ring region and adjacent to the first seal ring structure, and forming a first passivation layer disposed over the first and second seal ring structures. A semiconductor device fabricated by such a method is also provided.

摘要翻译： 本公开提供一种制造半导体器件的方法，所述方法包括提供具有密封环区域和电路区域的衬底，在所述密封环区域上形成第一密封环结构，在所述密封环上形成第二密封环结构 并且邻近第一密封环结构，以及形成设置在第一和第二密封环结构上的第一钝化层。 还提供了通过这种方法制造的半导体器件。

公开(公告)号：US20100090304A1

公开(公告)日：2010-04-15

申请号：US12626296

申请日：2009-11-25

申请人： Jen-Cheng Liu ,  Dun-Nian Yaung ,  Chen-Cheng Kuo ,  Chen-Shien Chen ,  Shou-Gwo Wuu

发明人： Jen-Cheng Liu ,  Dun-Nian Yaung ,  Chen-Cheng Kuo ,  Chen-Shien Chen ,  Shou-Gwo Wuu

IPC分类号： H01L31/0232 ,  H01L31/18 ,  H01L21/60

CPC分类号： H01L21/76898 ,  H01L23/3171 ,  H01L23/481 ,  H01L24/12 ,  H01L27/14618 ,  H01L27/14683 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2924/01019 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/12043 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00

摘要： The present disclosure provides a method of making an integrated circuit (IC). The method includes forming an electric device on a front side of a substrate; forming a top metal pad on the front side of the substrate, the top metal pad being coupled to the electric device; forming a passivation layer on the front side of the substrate, the top metal pad being embedded in the passivation layer; forming an opening in the passivation layer, exposing the top metal pad; forming a deep trench in the substrate; filling a conductive material in the deep trench and the opening, resulting in a though-wafer via (TWV) feature in the deep trench and a pad-TWV feature in the opening, where the top metal pad being connected to the TWV feature through the pad-TWV feature; and applying a polishing process to remove excessive conductive material, forming a substantially planar surface.

摘要翻译： 本公开提供了制造集成电路（IC）的方法。 该方法包括在基板的正面上形成电子装置; 在所述基板的前侧形成顶部金属焊盘，所述顶部金属焊盘联接到所述电气装置; 在所述基板的正面上形成钝化层，所述顶部金属焊盘嵌入所述钝化层中; 在钝化层中形成开口，暴露顶部金属垫; 在衬底中形成深沟槽; 在深沟槽和开口中填充导电材料，导致深沟槽中的贯穿晶片通孔（TWV）特征和开口中的焊盘TWV特征，其中顶部金属焊盘通过该沟槽连接到TWV特征 pad-TWV功能; 以及施加抛光工艺以去除过量的导电材料，形成基本平坦的表面。

公开(公告)号：US09455288B2

公开(公告)日：2016-09-27

申请号：US13476785

申请日：2012-05-21

申请人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Jeng-Shyan Lin ,  Wen-De Wang

发明人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Jeng-Shyan Lin ,  Wen-De Wang

IPC分类号： H01L31/0232 ,  H01L27/146

CPC分类号： H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464

摘要： A semiconductor device includes a substrate including a pixel region incorporating a photodiode, a grid disposed over the substrate and having walls defining a cavity vertically aligned with the pixel region, and a color filter material disposed in the cavity between the walls of the grid.

摘要翻译： 半导体器件包括：衬底，其包括并入有光电二极管的像素区域，设置在衬底上的栅格，并且具有限定与像素区域垂直对准的空腔的壁;以及布置在栅格壁之间的空腔中的滤色器材料。

公开(公告)号：US09406711B2

公开(公告)日：2016-08-02

申请号：US13524757

申请日：2012-06-15

申请人： Szu-Ying Chen ,  Tzu-Jui Wang ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Ping-Yin Liu ,  Lan-Lin Chao

发明人： Szu-Ying Chen ,  Tzu-Jui Wang ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Ping-Yin Liu ,  Lan-Lin Chao

IPC分类号： H01L31/00 ,  H01L27/146

CPC分类号： H01L27/14634 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469

摘要： A backside illuminated image sensor comprises a photodiode and a first transistor located in a first substrate, wherein the first transistor is electrically coupled to the photodiode. The backside illuminated image sensor further comprises a plurality of logic circuits formed in a second substrate, wherein the second substrate is stacked on the first substrate and the logic circuit are coupled to the first transistor through a plurality of bonding pads.

摘要翻译： 背面照明图像传感器包括光电二极管和位于第一衬底中的第一晶体管，其中第一晶体管电耦合到光电二极管。 背面照明图像传感器还包括形成在第二基板中的多个逻辑电路，其中第二基板堆叠在第一基板上，并且逻辑电路通过多个接合焊盘耦合到第一晶体管。

公开(公告)号：US09379093B2

公开(公告)日：2016-06-28

申请号：US13457637

申请日：2012-04-27

申请人： Szu-Ying Chen ,  Ping-Yin Liu ,  Calvin Yi-Ping Chao ,  Tzu-Jui Wang ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Lan-Lin Chao

发明人： Szu-Ying Chen ,  Ping-Yin Liu ,  Calvin Yi-Ping Chao ,  Tzu-Jui Wang ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Lan-Lin Chao

IPC分类号： H01L27/00 ,  H01L25/16 ,  H01L27/146

摘要： Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a sensor device with an application specific integrated circuit (ASIC) are disclosed. According to an embodiment, a sensor device may be bonded together face-to-face with an ASIC without using a carrier wafer, where corresponding bond pads of the sensor are aligned with bond pads of the ASIC and bonded together, in a one-to-one fashion. A column of pixels of the sensor may share a bond bad connected by a shared inter-metal line. The bond pads may be of different sizes and configured in different rows to be disjoint from each other. Additional dummy pads may be added to increase the bonding between the sensor and the ASIC.

公开(公告)号：US09224770B2

公开(公告)日：2015-12-29

申请号：US13457301

申请日：2012-04-26

申请人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Shuang-Ji Tsai

发明人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Shuang-Ji Tsai

IPC分类号： H01L31/0203 ,  H01L27/146

CPC分类号： H01L27/14685 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14689

摘要： A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first photosensitive diode and a second color filter is formed over a second photosensitive diode, and a gap is formed between the first color filter and the second color filter. The gap will serve to reflect light that otherwise would have crossed from the first color filter to the second color filter, thereby reducing cross-talk between the first photosensitive diode and the second photosensitive diode. A reflective grid may also be formed between the first photosensitive diode and the second photosensitive diode in order to assist in the reflection and further reduce the amount of cross-talk.

摘要翻译： 提供了一种用于减少感光二极管之间串扰的系统和方法。 在一个实施例中，在第一感光二极管上形成第一滤色器，并且在第二感光二极管上形成第二滤色器，并且在第一滤色器和第二滤色器之间形成间隙。 间隙将用于反射否则将从第一滤色器过渡到第二滤色器的光，从而减少第一光敏二极管和第二感光二极管之间的串扰。 也可以在第一感光二极管和第二感光二极管之间形成反射栅格，以帮助反射并进一步减少串扰量。

公开(公告)号：US08987855B2

公开(公告)日：2015-03-24

申请号：US13198057

申请日：2011-08-04

申请人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Shuang-Ji Tsai ,  Yueh-Chiou Lin

发明人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Shuang-Ji Tsai ,  Yueh-Chiou Lin

IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L31/02

CPC分类号： H01L27/14687 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

摘要： An image sensor device includes a semiconductor substrate having a front side and a backside. A first dielectric layer is on the front side of the semiconductor substrate. A metal pad is in the first dielectric layer. A second dielectric layer is over the first dielectric layer and on the front side of the semiconductor substrate. An opening penetrates through the semiconductor substrate from the backside of the semiconductor substrate, wherein the opening includes a first portion extending to expose a portion of the metal pad and a second portion extending to expose a portion of the second dielectric layer. A metal layer is formed in the first portion and the second portion of the opening.

公开(公告)号：US20140042298A1

公开(公告)日：2014-02-13

申请号：US13571099

申请日：2012-08-09

申请人： Meng-Hsun Wan ,  Szu-Ying Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

发明人： Meng-Hsun Wan ,  Szu-Ying Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L27/148

CPC分类号： H01L27/14634 ,  H01L27/1464 ,  H01L27/1469

摘要： A device includes an image sensor chip having an image sensor therein. A read-out chip is underlying and bonded to the image sensor chip, wherein the read-out chip includes a logic device selected from the group consisting essentially of a reset transistor, a source follower, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit. A peripheral circuit chip is underlying and bonded to the read-out chip, wherein the peripheral circuit chip includes a logic circuit.

摘要翻译： 一种装置包括其中具有图像传感器的图像传感器芯片。 读出芯片是底层的并且结合到图像传感器芯片上，其中读出芯片包括从基本上由复位晶体管，源极跟随器，行选择器及其组合组成的组中选择的逻辑器件。 逻辑器件和图像传感器彼此电耦合，并且是相同像素单元的部分。 外围电路芯片在下面并与读出的芯片结合，其中外围电路芯片包括一个逻辑电路。