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    Method and apparatus for process control in semiconductor manufacture
    61.
    发明授权
    Method and apparatus for process control in semiconductor manufacture 有权
    半导体制造中过程控制的方法和装置

    公开(公告)号：US06806971B2

    公开(公告)日：2004-10-19

    申请号：US10155236

    申请日：2002-05-28

    Applicant: Moshe Finarov

    Inventor： Moshe Finarov

    IPC: G01B1108

    CPC classification number: G01B11/00 ,  G01B11/0616

    Abstract: An optical system is presented for use in a measurement system for measuring in patterned structures, which is particularly useful controlling processing of the structure progressing on a production line. The system comprises an illuminator unit producing illuminating light to be directed to the structure to produce returned light, a detector unit comprising an imaging detector and a spectrophotometer detector, and a light directing assembly. The light directing assembly defines first and second optical paths for the light propagation. The optical elements accommodated in the first optical path affect the light to provide a relatively small measuring area of the structure's plane. The second optical path is located outside the first optical path, the light propagation through the second optical path providing a relatively large measuring area, as compared to that of the first optical path.

    Abstract translation: 光学系统被呈现用于在图案化结构中进行测量的测量系统中，这对于控制在生产线上进行的结构的处理特别有用。 该系统包括产生被引导到结构以产生返回光的照明光的照明器单元，包括成像检测器和分光光度计检测器的检测器单元以及光导组件。 光引导组件限定用于光传播的第一和第二光路。 容纳在第一光路中的光学元件影响光以提供结构平面的相对小的测量区域。 与第一光路相比，第二光路位于第一光路的外侧，通过第二光路的光传播提供相对大的测量区域。

    Monitoring apparatus and method particularly useful in photolithographically processing substrates
    63.
    发明授权
    Monitoring apparatus and method particularly useful in photolithographically processing substrates 有权
    监控设备和方法特别适用于光刻处理基板

    公开(公告)号：US06166801A

    公开(公告)日：2000-12-26

    申请号：US184727

    申请日：1998-11-02

    Applicant: Giora Dishon ,  Moshe Finarov ,  Yoel Cohen ,  Zvi Nirel

    Inventor： Giora Dishon ,  Moshe Finarov ,  Yoel Cohen ,  Zvi Nirel

    IPC: G03F7/20 ,  G03B27/32 ,  G01B9/02 ,  H01L21/66

    CPC classification number: G03F7/70633 ,  G03F7/70675 ,  G03F7/7075 ,  Y10S414/135

    Abstract: Apparatus for processing substrates according to a predetermined photolithography process includes a loading station in which the substrates are loaded, a coating station in which the substrates are coated with a photoresist material, an exposing station in which the photoresist coating is exposed to light through a mask having a predetermined pattern to produce a latent image of the mask on the photoresist coating, a developing station in which the latent image is developed, an unloading station in which the substrates are unloaded and a monitoring station for monitoring the substrates with respect to predetermined parameters of said photolithography process before reaching the unloading station.

    Abstract translation: 用于根据预定的光刻工艺处理衬底的设备包括其中装载衬底的装载站，其中衬底涂覆有光致抗蚀剂材料的涂覆站，其中光致抗蚀剂涂层通过掩模暴露于光的曝光站 具有预定图案以在光致抗蚀剂涂层上产生掩模的潜像，其中潜像显影的显影站，卸载基板的卸载站和用于相对于预定参数监测基板的监控站 的光刻工艺。

    Vacuum UV based optical measuring method and system
    66.
    发明授权
    Vacuum UV based optical measuring method and system 有权

    公开(公告)号：US08552394B2

    公开(公告)日：2013-10-08

    申请号：US12358548

    申请日：2009-01-23

    Applicant: Moshe Finarov

    Inventor： Moshe Finarov

    IPC: G01J1/04

    CPC classification number: G01N21/211 ,  G01N21/01 ,  G01N2201/023

    Abstract: A method and system are presented for use in optical processing of an article by VUV radiation. The method comprises: localizing incident VUV radiation propagation from an optical head assembly towards a processing site on the article outside the optical head assembly and localizing reflected VUV radiation propagation from said processing site towards the optical head assembly by localizing a medium, non-absorbing with respect to VUV radiation, in within the light propagation path in the vicinity of said site outside the optical head assembly. The level of the medium is controlled by measuring the reflected VUV radiation.

    Method and system for measuring patterned structures
    67.
    发明授权
    Method and system for measuring patterned structures 有权

    公开(公告)号：US08531678B2

    公开(公告)日：2013-09-10

    申请号：US13235986

    申请日：2011-09-19

    Applicant: Moshe Finarov ,  Boaz Brill

    Inventor： Moshe Finarov ,  Boaz Brill

    IPC: G01B11/14

    CPC classification number: G01B11/24 ,  G01B9/02087 ,  G01J3/45 ,  G01N21/21 ,  H01L22/12 ,  H01L22/20

    Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.

    Lateral shift measurement using an optical technique
    68.
    发明授权
    Lateral shift measurement using an optical technique 有权

    公开(公告)号：US08363219B2

    公开(公告)日：2013-01-29

    申请号：US12775883

    申请日：2010-05-07

    Applicant: Boaz Brill ,  Moshe Finarov ,  David Schiener

    Inventor： Boaz Brill ,  Moshe Finarov ,  David Schiener

    IPC: G01B11/00 ,  H01L23/544 ,  H01L21/76

    CPC classification number: G03F7/70633 ,  G01B11/14 ,  G01B11/27 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  H01L22/12

    Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements include at least two measurements with different polarization states of incident light, each measurement including illuminating the measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between the diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.

    Two dimensional beam deflector
    69.
    再颁专利
    Two dimensional beam deflector 有权
    二维光束偏转器

    公开(公告)号：USRE41906E1

    公开(公告)日：2010-11-02

    申请号：US12053285

    申请日：2008-03-21

    Applicant: Moshe Finarov

    Inventor： Moshe Finarov

    IPC: G01B11/06 ,  G03F7/20

    CPC classification number: G01B11/065

    Abstract: A two dimensional beam deflector is disclosed which deflects beams from multiple optical assemblies. The input of beams of the multiple optical assemblies follow parallel optical paths until deflection to a wafer. An ellipsometer using a two-dimensional beam deflector is also disclosed.

    Abstract translation: 公开了一种二维光束偏转器，其偏转来自多个光学组件的光束。 多个光学组件的光束的输入遵循平行光路，直到偏转到晶片。 还公开了使用二维光束偏转器的椭偏仪。

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