MOLD RELEASE COMPOSITION AND SURFACE PROTECTIVE FILM
    61.
    发明申请
    MOLD RELEASE COMPOSITION AND SURFACE PROTECTIVE FILM 审中-公开
    模具释放组合物和表面保护膜

    公开(公告)号:US20120034456A1

    公开(公告)日:2012-02-09

    申请号:US13265169

    申请日:2010-04-16

    IPC分类号: C08K5/5415 B32B9/00

    摘要: Provided are a mold release composition, with which it is possible to form a transparent coating on the surface of which a photoresist cannot readily stick, and a surface protective film having a coating constituted by a cured product thereof. The mold release composition can include a binder resin, silicone oil and a metal alkoxide hydrolyzate. A content of the metal alkoxide hydrolyzate can be 50 to 500 parts by weight with respect to 100 parts by weight of the binder resin. The metal alkoxide can consist of or include tetraethoxysilane or tetramethoxysilane. The surface protective film can be obtained by forming a coating of the cured product of the mold release composition on a substrate.

    摘要翻译: 提供了一种脱模组合物,其可以在其表面上形成光致抗蚀剂不易于粘附的透明涂层,以及具有由其固化产物构成的涂层的表面保护膜。 脱模组合物可以包括粘合剂树脂,硅油和金属醇盐水解产物。 相对于100重量份的粘合剂树脂,金属醇盐水解物的含量可以为50〜500重量份。 金属醇盐可以由四乙氧基硅烷或四甲氧基硅烷组成或包括四乙氧基硅烷。 表面保护膜可以通过在基材上形成脱模剂组合物的固化物的涂层来获得。

    Spectrometric analyzing device and spectrometric analyzing method
    62.
    发明授权
    Spectrometric analyzing device and spectrometric analyzing method 有权
    光谱分析装置和光谱分析方法

    公开(公告)号:US08094308B2

    公开(公告)日:2012-01-10

    申请号:US12310865

    申请日:2007-12-21

    申请人: Takeshi Hasegawa

    发明人: Takeshi Hasegawa

    IPC分类号: G01J4/00

    摘要: A spectrometric analyzing device is capable of analyzing a thin film with high accuracy by using light having an arbitrary wavelength, such as not only infrared light but also visible light, ultraviolet light and X-ray, and using whatever refractive index of a supporting member of the thin film. A spectrometric analyzing device comprises a light source (1), a polarizing filter (2), a detection unit (3), a regression operation unit (4) and an absorbance spectrum calculation unit (5). The light source (1) emits light at n different angles of incidence (θn) to a measurement portion. The polarizing filter (2) shields an s-polarized component. The detection unit (3) detects transmitted spectra (S). The regression operation unit (4) uses the transmitted spectra (S) and a mixing ratio (R) to obtain an in-plane mode spectrum (sip) and an out-of-plane mode spectrum (sop) through a regression analysis. The absorbance spectrum calculation unit (5) calculates an in-plane mode absorbance spectrum (Aip) and an out-of-plane mode absorbance spectrum (Aop) of the thin film, based on the results from a state in which the thin film is on the supporting member and a state in which no thin film is on the supporting member.

    摘要翻译: 光谱分析装置能够通过使用具有任意波长的光,例如不仅具有红外光,还包括可见光,紫外光和X射线,并且使用任何波长的光的任何折射率,能够高精度地分析薄膜 薄膜。 光谱分析装置包括光源(1),偏振滤光器(2),检测单元(3),回归运算单元(4)和吸收光谱计算单元(5)。 光源(1)以不同的入射角(& n; n)发射光到测量部分。 偏振滤光器(2)屏蔽s偏振分量。 检测单元(3)检测发送光谱(S)。 回归运算单元(4)使用透射光谱(S)和混合比(R),通过回归分析获得平面内模式谱(sip)和平面外模式谱(sop)。 吸光度光谱计算单元(5)根据薄膜为(1)的状态的结果,计算出薄膜的面内模式吸收光谱(Aip)和平面外模式吸收光谱(Aop) 在支撑构件上并且在支撑构件上没有薄膜的状态。

    Heat treatment jig and heat treatment method for silicon wafer
    63.
    发明授权
    Heat treatment jig and heat treatment method for silicon wafer 有权
    硅片热处理夹具及热处理方法

    公开(公告)号:US08026182B2

    公开(公告)日:2011-09-27

    申请号:US12339118

    申请日:2008-12-19

    IPC分类号: H01L21/302

    摘要: In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all the support projections under the silicon wafer are positioned on a same circle within a region where a radial distance from the center is defined by 85 to 99.5% of the wafer radius, and the support arms form an angle of 120° with each other about the center. With this jig and method, free depth of a dislocation generated from a pin position can be controlled deeper than a device formation region, and a widest slip-free region where the surface is free from slip dislocation is obtained.

    摘要翻译: 在这种用于硅晶片的热处理夹具和方法中,将硅晶片安装在设置在三个支撑臂上的支撑突起上进行热处理,其具有从支撑框架向中心突出的中间间隔。 此时,硅晶片下面的所有支撑突起都位于与中心的径向距离限定晶片半径的85至99.5%的区域内的相同的圆上,并且支撑臂形成120°的角度 彼此围绕中心。 利用这种夹具和方法,可以将从销位置产生的位错的自由深度控制得比装置形成区域更深,并且获得表面没有滑移位错的最宽的无滑动区域。

    NETWORK GAME SYSTEM, GAME MACHINE, GAME MACHINE CONTROL METHOD, AND INFORMATION STORAGE MEDIUM
    65.
    发明申请
    NETWORK GAME SYSTEM, GAME MACHINE, GAME MACHINE CONTROL METHOD, AND INFORMATION STORAGE MEDIUM 失效
    网络游戏系统,游戏机,游戏机控制方法和信息存储介质

    公开(公告)号:US20090270171A1

    公开(公告)日:2009-10-29

    申请号:US12093807

    申请日:2006-11-07

    IPC分类号: A63F9/24

    摘要: Provided is a network game system for providing a game played by players of game machines by operating at least one of the game machines as a server, in which: the game machine to be operated as a server can be appropriately selected; a measuring unit (22) of each of the game machines (12) measures a time required to exchange predetermined data between the game machine (12) and another game machine (12) of the game machines (12); and a server determining unit (28) determines at least one of the game machines (12) as the game machine (12) to be operated as the server according to the results of the measurement by the measuring units (22) of the game machines (12).

    摘要翻译: 提供了一种网络游戏系统,用于通过将至少一个游戏机作为服务器来提供游戏机的玩家玩的游戏,其中可以适当地选择要作为服务器操作的游戏机; 每个游戏机(12)的测量单元(22)测量在游戏机(12)和游戏机(12)的另一游戏机(12)之间交换预定数据所需的时间; 并且服务器确定单元(28)根据游戏机的测量单元(22)根据测量结果将游戏机(12)中的至少一个确定为要作为服务器操作的游戏机(12) (12)。

    Heat treatment jig and heat treatment method for silicon wafer
    66.
    发明授权
    Heat treatment jig and heat treatment method for silicon wafer 有权
    硅片热处理夹具及热处理方法

    公开(公告)号:US07481888B2

    公开(公告)日:2009-01-27

    申请号:US10551695

    申请日:2004-03-30

    IPC分类号: C23C16/00

    摘要: In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all the support projections under the silicon wafer are positioned on a same circle within a region where a radial distance from the center is defined by 85 to 99.5% of the wafer radius, and the support arms form an angle of 120° with each other about the center. With this jig and method, free depth of a dislocation generated from a pin position can be controlled deeper than a device formation region, and a widest slip-free region where the surface is free from slip dislocation is obtained.

    摘要翻译: 在这种用于硅晶片的热处理夹具和方法中,将硅晶片安装在设置在三个支撑臂上的支撑突起上进行热处理,其具有从支撑框架向中心突出的中间间隔。 此时,硅晶片下面的所有支撑突起都位于与中心的径向距离限定晶片半径的85至99.5%的区域内的相同的圆上,并且支撑臂形成120°的角度 彼此围绕中心。 利用这种夹具和方法,可以将从销位置产生的位错的自由深度控制得比装置形成区域更深,并且获得表面没有滑移位错的最宽的无滑动区域。

    Apparatus and method for producing soap cake
    70.
    发明授权
    Apparatus and method for producing soap cake 失效
    皂饼生产方法及装置

    公开(公告)号:US07326379B2

    公开(公告)日:2008-02-05

    申请号:US10391628

    申请日:2003-03-20

    IPC分类号: B29C45/00 C11D13/16

    CPC分类号: C11D13/16

    摘要: An apparatus for producing a soap cake comprising a mold which has a cavity of prescribed shape, a feed passage for feeding molten soap to the cavity, and means for pushing molten soap remaining in the feed passage at the time of feeding molten soap to the cavity to remove molten soap remaining in the feed passage. One end of the feed passage is a gate, in which a gate pin for shutting the connection between a feed port and the cavity is slidably provided. As the gate pin advances, molten soap remaining in the feed passage is removed in the step of feeding molten soap to the cavity.

    摘要翻译: 一种用于生产皂饼的装置,包括具有规定形状的空腔的模具,用于将熔融皂送入空腔的进料通道,以及在将熔融皂送入空腔时将残留在进料通道中的熔融肥料推入的装置 以除去残留在进料通道中的熔融肥皂。 供给通道的一端是闸门,其中可滑动地设置用于关闭进料口和空腔之间的连接的闸销。 当浇口销前进时,在将熔融皂送入空腔的步骤中,残留在进料通道中的熔融肥皂被去除。