公开(公告)号：US5108951A

公开(公告)日：1992-04-28

申请号：US609883

申请日：1990-11-05

申请人： Fusen E. Chen ,  Fu-Tai Liou ,  Yih-Shung Lin ,  Girish A. Dixit ,  Che-Chia Wei

发明人： Fusen E. Chen ,  Fu-Tai Liou ,  Yih-Shung Lin ,  Girish A. Dixit ,  Che-Chia Wei

IPC分类号： H01L21/28 ,  C23C16/02 ,  C23C16/20 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532

CPC分类号： H01L21/76843 ,  C23C16/0281 ,  C23C16/20 ,  H01L21/28512 ,  H01L21/32051 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002

摘要： A method is provided for depositing aluminum thin film layers to form improved quality contacts in a semiconductor integrated circuit device. All or some of the deposition process occurs at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber.

公开(公告)号：US5057463A

公开(公告)日：1991-10-15

申请号：US486121

申请日：1990-02-28

申请人： Frank R. Bryant ,  Fu-Tai Liou

发明人： Frank R. Bryant ,  Fu-Tai Liou

IPC分类号： H01L21/316

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  Y10S148/118

摘要： A method for forming a thin oxide layer structure includes the step of first growing a dry oxide layer. A layer grown in steam and chlorine is formed next, followed by a final dry oxide layer. An anneal step in an inert gas further improves the quality of the oxide layer. The structure formed by such a process provides a layer of steam grown oxide sandwiched between two layers of oxide grown in a dry atmosphere.

摘要翻译： 形成薄氧化物层结构的方法包括首先生长干氧化物层的步骤。 接下来形成在蒸汽和氯气中生长的层，随后是最后的干燥氧化物层。 惰性气体中的退火步骤进一步提高了氧化物层的质量。 通过这种方法形成的结构提供了在干燥气氛中生长的两层氧化物之间的蒸汽生长氧化层。

公开(公告)号：US4978637A

公开(公告)日：1990-12-18

申请号：US359860

申请日：1989-05-31

申请人： Fu-Tai Liou ,  Yih-Shung Lin ,  Fusen E. Chen

发明人： Fu-Tai Liou ,  Yih-Shung Lin ,  Fusen E. Chen

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3215 ,  H01L21/336 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8238 ,  H01L23/532 ,  H01L27/06 ,  H01L27/088 ,  H01L27/092 ,  H01L27/10 ,  H01L29/78

CPC分类号： H01L29/6659 ,  H01L21/28518 ,  H01L21/32155 ,  H01L21/76895 ,  H01L23/53271 ,  H01L29/78 ,  H01L2924/0002 ,  Y10S148/015 ,  Y10S148/019 ,  Y10S148/02

摘要： A silicide layer, to improve conductivity, is formed over a first layer of polycrystalline silicon, followed by a second layer of polycrystalline silicon. This structure is then patterned to form gate regions over active areas. A layer of metal silicide is formed over the entire surface of the chip, and patterned to form local interconnect. Etching of the second metal silicide layer is stopped by the second polycrystalline silicon layer, thereby protecting the first metal silicide layer from damage.

摘要翻译： 在第一层多晶硅上形成硅化物层，以提高导电性，随后是第二层多晶硅。 然后将该结构图案化以在有效区域上形成栅极区域。 在芯片的整个表面上形成金属硅化物层，并且被图案化以形成局部互连。 通过第二多晶硅层阻止第二金属硅化物层的蚀刻，从而保护第一金属硅化物层免受损坏。

公开(公告)号：US4933304A

公开(公告)日：1990-06-12

申请号：US266796

申请日：1988-11-03

申请人： Fusen Chen ,  Yih-Shung Lin ,  Fu-Tai Liou

发明人： Fusen Chen ,  Yih-Shung Lin ,  Fu-Tai Liou

IPC分类号： H01L21/302 ,  H01L21/027 ,  H01L21/30 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/3213

CPC分类号： H01L21/0276 ,  H01L21/321 ,  Y10S148/138 ,  Y10S148/158 ,  Y10S438/952

摘要： The method for producing the surface reflectance of the metal layer during semiconductor processing includes the step of roughening the surface of a metal layer prior to forming the photoresist thereon. The roughened surface reduces reflections that can cause metal notching effects. The step of roughening the surface includes depositing a layer (34) of aluminum which is substantially thinner than the thickness of the primary metal layer by a sputtering process.

公开(公告)号：US4886764A

公开(公告)日：1989-12-12

申请号：US357666

申请日：1989-05-25

申请人： Robert O. Miller ,  Fu-Tai Liou

发明人： Robert O. Miller ,  Fu-Tai Liou

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/336

CPC分类号： H01L29/66575 ,  H01L21/28052 ,  H01L21/28518 ,  Y10S148/015 ,  Y10S148/019 ,  Y10S148/147

摘要： A process for forming a capping layer over a titanium silicide layer includes forming a layer of polysilicon (16) over a gate-oxide layer (14). A layer of titanium (18) is then formed over the poly layer (16) followed by deposition of a composite layer of tantalum silicide (20). The structure is then patterned and subjected to an annealing process to form a titanium silicide layer (22) covered by the capping layer (20) of tantalum silicide. The tantalum silicide provides a much higher oxidation resistant layer with the underlying titanium silicide providing the desirable conductive properties needed for long runs of interconnects on a semiconductor structure.

公开(公告)号：US4771014A

公开(公告)日：1988-09-13

申请号：US99144

申请日：1987-09-18

申请人： Fu-Tai Liou ,  Yu-Pin Han ,  Frank R. Bryant

发明人： Fu-Tai Liou ,  Yu-Pin Han ,  Frank R. Bryant

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L21/265 ,  H01L27/00

CPC分类号： H01L21/823878 ,  H01L27/0928

摘要： A method for making a CMOS integrated circuit device saves on masking steps by using unmasked blanket implantations at various steps of the process, such as setting the threshold voltages of the transistors, forming a lightly doped drain for the N-channel transistor, and for forming the source/drain regions of the N-type transistor.