公开(公告)号：US06472689B1

公开(公告)日：2002-10-29

申请号：US09677787

申请日：2000-10-02

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

摘要翻译： 这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括 低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘的氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法， 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

公开(公告)号：US06249012B1

公开(公告)日：2001-06-19

申请号：US08956950

申请日：1997-10-23

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： A semiconductor device having an n-type layer of gallium nitride that is doped with silicon and has a resistively ranging from 3×10−1 &OHgr;cm to 8×10−3 &OHgr;cm or a carrier concentration ranging from 6×1016/cm3 to 3×1018/cm3.

摘要翻译： 一种半导体器件，其具有掺杂硅的n型氮化镓层，其电阻范围为3×10 -1Ω〜8×10 -3Ω/ cm或载流子浓度为6×10 16 / cm 3〜3×10 18 / cm 3。

公开(公告)号：US5733796A

公开(公告)日：1998-03-31

申请号：US556232

申请日：1995-11-09

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L33/00 ,  H01L33/02 ,  H01L33/32 ,  H01L21/20

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： A light-emitting semiconductor device using a gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) having an i.sub.L -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a low concentration of p-type impurities. An i.sub.H -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a high concentration of p-type impurities is adjacent to the i.sub.L -layer. An n-layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of low carrier concentration is adjacent to the i.sub.L -layer. An n.sup.+ -layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of high carrier concentration doped with n-type impurities is adjacent to the n-layer.

摘要翻译： 使用具有含有低浓度p型杂质的绝缘氮化镓化合物半导体（Al x Ga 1-x N，包括x = 0）的iL层的氮化镓系化合物半导体（Al x Ga 1-x N）的发光半导体装置。 含有高浓度p型杂质的绝缘氮化镓化合物半导体（Al x Ga 1-x N，包括x = 0）的iH层与iL层相邻。 低载流子浓度的n型氮化镓化合物半导体（Al x Ga 1-x N，包括x = 0）的n层与iL层相邻。 n型氮化镓化合物半导体（Al x Ga 1-x N，包括x = 0）的n +层与n型杂质掺杂的高载流子浓度相邻。

公开(公告)号：US5583879A

公开(公告)日：1996-12-10

申请号：US423946

申请日：1995-04-19

申请人： Shiro Yamazaki ,  Norikatsu Koide ,  Katsuhide Manabe ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Shiro Yamazaki ,  Norikatsu Koide ,  Katsuhide Manabe ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01S5/30 ,  H01S5/323 ,  H01S3/18 ,  H01L3/00

CPC分类号： H01S5/32341 ,  H01S5/3086

摘要： A gallium nitride group compound semiconductor laser diode (10) satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1 comprises by a double hetero-junction structure sandwiching an active layer (5) between layers (4, 6) having wider band gaps than the active layer (5). The active layer (5) may comprise magnesium (Mg) doped p-type conductive gallium nitride group compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1 . In another embodiment, the active layer (5) is doped with silicon (Si).

摘要翻译： 满足式（Al x Ga 1-x）y In 1-y N，包括0≤x≤1且0≤y≤1的氮化镓族化合物半导体激光二极管（10） 在具有比活性层（5）更宽的带隙的层（4,6）之间夹着有源层（5）的结结构结构。 有源层（5）可以包括满足式（Al x Ga 1-x）y In 1-y N的包含镁（Mg）的p型导电氮化镓族化合物半导体，包括0≤x≤1和0≤ y

公开(公告)号：US5094684A

公开(公告)日：1992-03-10

申请号：US554986

申请日：1990-07-17

申请人： Takafumi Shida ,  Hideo Arabori ,  Takeo Watanabe ,  Shiro Yamazaki ,  Hiroyasu Shinkawa

发明人： Takafumi Shida ,  Hideo Arabori ,  Takeo Watanabe ,  Shiro Yamazaki ,  Hiroyasu Shinkawa

IPC分类号： A01N43/653 ,  C07C65/21 ,  C07C67/14 ,  C07C69/734 ,  C07C235/42 ,  C07D249/10 ,  C07D263/42 ,  C07D263/48

CPC分类号： C07C65/21 ,  A01N43/653 ,  C07D249/10 ,  C07D263/48

摘要： Disclosed herein is a derivative of 1,5-diphenyl-1H-1,2,4-triazole-3-carboxamide represented by the following formula (I): ##STR1## wherein R represents an alkyl group of 2 to 10 carbon atoms, which is substituted by fluorine atom(s), and X represents a hydrogen atom or a fluorine atom, a process for producing the derivative and herbicidal compositions containing the derivative of 1,5-diphenyl-1H-1,2,4-triazole-3-carboxamide as an active ingredient.

公开(公告)号：US4820334A

公开(公告)日：1989-04-11

申请号：US918111

申请日：1986-10-14

申请人： Takafumi Shida ,  Shiro Yamazaki ,  Hiroyasu Shinkawa

发明人： Takafumi Shida ,  Shiro Yamazaki ,  Hiroyasu Shinkawa

IPC分类号： A01N43/653 ,  C07D249/10 ,  C07D263/48

CPC分类号： C07D263/48 ,  A01N43/653 ,  C07D249/10

摘要： A 1,2,4-triazole-3-carboxamide compound represented by the formula (I): ##STR1## wherein R represents a straight-chain or branched-chain saturated (C.sub.2 -C.sub.10)alkyl group which is unsubstituted or substituted by fluorine atom(s); a cyclic saturated (C.sub.3 -C.sub.10)alkyl group which is unsubstituted or substituted by fluorine atom(s); a straight-chain, branched-chain or cyclic unsaturated (C.sub.3 -C.sub.10)-alkyl group which is unsubstituted or substituted by fluorine atom(s); a group represented by the formula (II): ##STR2## wherein R.sup.1 represents a halogen atom, a (C.sub.1 -C.sub.3)alkyl group, a (C.sub.1 -C.sub.3)alkoxy group or a fluorine-substituted (C.sub.1 -C.sub.3)alkyl group, m is an integer of from 0 to 5 and n is 0 or 1; a straight-chain or branched-chain saturated (C.sub.1 -C.sub.8)alkoxy(C.sub.2 14 C.sub.10)alkyl group; a straight-chain or branched-chain unsaturated (C.sub.1 -C.sub.8)alkoxy(C.sub.2 -C.sub.10)alkyl group; a phenoxy(C.sub.2 -C.sub.6)alkyl group; an aralkoxy(C.sub.2 1-C.sub.6)alkyl group; a phenoxy(C.sub.2 -C.sub.6)alkyl group having phenyl group(s) substituted by halogen atom(s) or (C.sub.1 -C.sub.3)alkyl group(s); an aralkoxy(C.sub.2 -C.sub.6)alkyl group having phenyl group(s) substituted by halogen atom(s) or (C.sub.1 -C.sub.3)alkyl group(s); a [(C.sub.1 -C.sub.8)alkoxy(C.sub.2 -C.sub.10)alkoxy](C.sub.2 -C.sub.10)alkyl group; or a group represented by the formula (III): ##STR3## wherein p is an integer of from 1 to 8, a process for producing the same compound, and a herbicidal composition containing the 1,2,4-triazole-3-carboxamide compound as an active ingredient.

摘要翻译： 由式（I）表示的1,2,4-三唑-3-甲酰胺化合物：其中R表示未取代的直链或支链饱和（C 2 -C 10）烷基， 被氟原子取代; 未被取代或被氟原子取代的环状饱和（C 3 -C 10）烷基; 未被取代或被氟原子取代的直链，支链或环状不饱和（C 3 -C 10） - 烷基; 式（II）表示的基团：其中R1表示卤素原子，（C1-C3）烷基，（C1-C3）烷氧基或氟取代的（C1-C3） 烷基，m为0〜5的整数，n为0或1; 直链或支链饱和（C1-C8）烷氧基（C214 C10）烷基; 直链或支链不饱和（C1-C8）烷氧基（C2-C10）烷基; 苯氧基（C 2 -C 6）烷基; 芳烷氧基（C 21 -C 6）烷基; 具有被卤素原子或（C1-C3）烷基取代的苯基的苯氧基（C2-C6）烷基; 具有被卤素原子或（C1-C3）烷基取代的苯基的芳烷氧基（C2-C6）烷基; [（C 1 -C 8）烷氧基（C 2 -C 10）烷氧基]（C 2 -C 10）烷基; 或由式（III）表示的基团：其中p是1至8的整数，其中相同化合物的制备方法和含有1,2,4-三唑-2-酮的除草组合物， 3-甲酰胺化合物作为活性成分。

公开(公告)号：US4071633A

公开(公告)日：1978-01-31

申请号：US772131

申请日：1977-02-25

申请人： Katsumichi Aoki ,  Susumu Shimizu ,  Keigo Satake ,  Shiro Yamazaki ,  Nobuo Hatakeyama

发明人： Katsumichi Aoki ,  Susumu Shimizu ,  Keigo Satake ,  Shiro Yamazaki ,  Nobuo Hatakeyama

IPC分类号： A01N37/28 ,  C07C67/00 ,  C07C241/00 ,  C07C243/38 ,  A01N9/20 ,  C07C103/82

CPC分类号： C07C243/38

摘要： Novel N-trichloroacetyl-N'-chlorobenzoylhydrazine derivatives, having the following formula: ##STR1## WHERE N STANDS FOR 1 OR 2, AND ESPECIALLY ADAPTED FOR USE AS FUNGICIDAL AGENT FOR AGRICULTURAL USE, AND PROCESS FOR MANUFACTURING SAME.

摘要翻译： 新型的N-三氯乙酰基-N'-氯苯甲酰肼衍生物，具有下列结构式：其中N为1或2的化合物，特别适用于农业用途的杀真菌剂及其制备方法。

公开(公告)号：US4007279A

公开(公告)日：1977-02-08

申请号：US544895

申请日：1975-01-28

申请人： Takaaki Ohtsuka ,  Keigo Satake ,  Shiro Yamazaki ,  Takeo Watanabe

发明人： Takaaki Ohtsuka ,  Keigo Satake ,  Shiro Yamazaki ,  Takeo Watanabe

IPC分类号： C07D339/08

CPC分类号： C07D339/08

摘要： A fungicidal compound having a general structure corresponding to a member selected from the group of 2,3-dicyano-5,6-dihydro-p-dithiin and its 5-alkyl derivatives, as expressed by the following general formula: ##STR1## wherein R stands for H or an alkyl radical of C.sub.1 - C.sub.6.

摘要翻译： 具有对应于选自2,3-二氰基-5,6-二氢 - 对 - 二硫杂及其5-烷基衍生物的成员的一般结构的杀真菌化合物，由以下通式表示：其中 R代表H或C1-C6的烷基。

公开(公告)号：US07112243B2

公开(公告)日：2006-09-26

申请号：US10200586

申请日：2002-07-23

申请人： Masayoshi Koike ,  Shiro Yamazaki

发明人： Masayoshi Koike ,  Shiro Yamazaki

IPC分类号： C30B29/38 ,  H01L21/36

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262

摘要： The present invention provides a method for producing a Group III nitride compound semiconductor, which method permits only minimal reaction of the semiconductor with a hetero-substrate during epitaxial growth and induces no cracks in the Group III nitride compound semiconductor even when the semiconductor is cooled to room temperature. The method includes a buffer layer formation step for forming a gas-etchable buffer layer on the hetero-substrate, and a semiconductor formation step for epitaxially growing the Group III nitride compound semiconductor on the buffer layer through a vapor phase growth method, wherein at least a portion of the buffer layer is gas-etched during or after the semiconductor formation step.

摘要翻译： 本发明提供了一种制造III族氮化物化合物半导体的方法，该方法在外延生长期间仅允许半导体与异质衬底的反应最小，并且即使当半导体被冷却到第三族氮化物半导体时也不引起裂纹 室内温度。 该方法包括用于在异质衬底上形成气体可蚀刻缓冲层的缓冲层形成步骤，以及用于通过气相生长法在缓冲层上外延生长III族氮化物半导体的半导体形成步骤，其中至少 在半导体形成步骤期间或之后，缓冲层的一部分被气蚀刻。

公开(公告)号：US06472690B1

公开(公告)日：2002-10-29

申请号：US09677789

申请日：2000-10-02

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

摘要翻译： 这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括 低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘的氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法， 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。