公开(公告)号：US06807034B2

公开(公告)日：2004-10-19

申请号：US10170802

申请日：2002-06-13

申请人： Naoya Hasegawa ,  Eiji Umetsu

发明人： Naoya Hasegawa ,  Eiji Umetsu

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3916 ,  G11B5/3954

摘要： In a CPP-type magnetic sensing element, a free magnetic layer includes at least two magnetic sublayers and an intermediate sublayer placed between the two adjacent magnetic sublayers, and thus the free magnetic layer is in a synthetic ferrimagnetic state. Since the physical thickness of the free magnetic layer can be increased and the resultant magnetic moment can be decreased, the bulk scattering effect is satisfactorily displayed and the magnetization of the free magnetic layer varies satisfactorily in response to en external magnetic field, resulting in an increase in the read output.

摘要翻译： 在CPP型磁敏元件中，自由磁性层包括至少两个磁性子层和位于两个相邻磁性子层之间的中间子层，因此自由磁性层处于合成铁磁性状态。 由于可以增加自由磁性层的物理厚度并且可以减小所得的磁矩，所以体积散射效果令人满意地显示，并且自由磁性层的磁化响应于外部磁场而令人满意地变化，导致增加 在读取输出。

公开(公告)号：US07839608B2

公开(公告)日：2010-11-23

申请号：US11623682

申请日：2007-01-16

申请人： Kazumi Kamai ,  Naoya Hasegawa ,  Eiji Umetsu ,  Kazuaki Ikarashi

发明人： Kazumi Kamai ,  Naoya Hasegawa ,  Eiji Umetsu ,  Kazuaki Ikarashi

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G01R33/098 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01L43/10

摘要： A tunnel-type magnetic detecting device is provided. The tunnel-type magnetic detecting device is capable of stably reducing the surface roughness of an insulating barrier layer, and capable of properly improving an MR effect typified by a resistance changing rate. A seed layer is formed in a laminated structure of an NiFeCr layer and an Al layer. This makes it possible to stably reduce the surface roughness of the insulating barrier layer as compared with a related art in which a seed layer is formed in a single-layer structure of an NiFeCr layer. Accordingly, according to the tunnel-type magnetic detecting device of the invention, the MR property typified by an excellent resistance changing rate (ΔR/R) can be obtained stably.

摘要翻译： 提供隧道式磁检测装置。 隧道式磁检测装置能够稳定地降低绝缘阻挡层的表面粗糙度，能够适当地提高以电阻变化率为代表的MR效应。 种子层以NiFeCr层和Al层的层叠结构形成。 与使NiFeCr层的单层结构形成种子层的现有技术相比，能够稳定地降低绝缘阻挡层的表面粗糙度。 因此，根据本发明的隧道式磁检测装置，可以稳定地获得以优异的电阻变化率（＆Dgr; R / R）为代表的MR特性。

公开(公告)号：US07800867B2

公开(公告)日：2010-09-21

申请号：US12548982

申请日：2009-08-27

申请人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

发明人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

IPC分类号： G11B5/39

CPC分类号： G11B5/3903 ,  G11B5/3163 ,  G11B5/398

摘要： A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic layer and the free magnetic layer. In the CPP giant magnetoresistive head, the pinned magnetic layer extends to the rear of the nonmagnetic layer and the free magnetic layer in the height direction, and the dimension of the pinned magnetic layer in the height direction is larger than that in the track width direction. Also, the pinned magnetic layer comprises a magnetic material having a positive magnetostriction constant or a magnetic material having high coercive force, and the end of the pinned magnetic layer is exposed at a surface facing a recording medium.

摘要翻译： CPP巨磁阻头包括下屏蔽层和上屏蔽层，以及设置在上屏蔽层和下屏蔽层之间的巨磁阻元件，包括钉扎磁性层，自由磁性层和设置在被钉扎的磁性层和自由磁性层之间的非磁性层 层。 在CPP巨磁阻磁头中，被钉扎的磁性层在高度方向上延伸到非磁性层的后部和自由磁性层，并且被钉扎的磁性层在高度方向上的尺寸大于轨道宽度方向上的尺寸 。 此外，钉扎磁性层包括具有正的磁致伸缩常数的磁性材料或具有高矫顽力的磁性材料，并且被钉扎的磁性层的端部在面向记录介质的表面上暴露。

公开(公告)号：US07397639B2

公开(公告)日：2008-07-08

申请号：US11194090

申请日：2005-07-28

申请人： Tomohiro Yamashita ,  Naoya Hasegawa ,  Eiji Umetsu ,  Ryo Nakabayashi ,  Akira Takahashi

发明人： Tomohiro Yamashita ,  Naoya Hasegawa ,  Eiji Umetsu ,  Ryo Nakabayashi ,  Akira Takahashi

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3945

摘要： A magnetic detecting element, which can suppress change in output asymmetry even if the magnetization direction of a pinned magnetic layer is changed 180°, is provided. The magnetic-film-thickness of a second free magnetic layer is increased so as to be greater than that of a first free magnetic layer and offset the torque applied to the second free magnetic layer with that applied to the first free magnetic layer when the sensing current magnetic field occurs. Thus, change in the magnetization direction of the free magnetic layer before and after a sensing current is applied in the magnetic detecting element can be suppressed. The orthogonal state between the free magnetic layer and the pinned magnetic layer is maintained even when a sensing current in the same direction as that before the occurrence is applied in the magnetic detecting element wherein pin inversion occurred, and the output asymmetry is maintained suitably.

摘要翻译： 即使磁性层的磁化方向为180°，也能够抑制输出不对称的变化的磁性检测元件。 第二自由磁性层的磁膜厚度增加到大于第一自由磁性层的磁膜厚度，并且当施加到第一自由磁性层时，施加到第二自由磁性层上的扭矩偏移到第一自由磁性层 发生电流磁场。 因此，可以抑制在磁检测元件中施加感测电流之前和之后的自由磁性层的磁化方向的变化。 即使当在发生针反转的磁检测元件中施加与发生前相同的方向的感测电流时，也保持自由磁性层和被钉扎磁性层之间的正交状态，并且适当地保持输出不对称性。

公开(公告)号：US20080024120A1

公开(公告)日：2008-01-31

申请号：US11679083

申请日：2007-02-26

申请人： Shinichi Sasaki ,  Kiyoshi Sato ,  Naoya Hasegawa ,  Yoshito Sasaki ,  Eiji Umetsu

发明人： Shinichi Sasaki ,  Kiyoshi Sato ,  Naoya Hasegawa ,  Yoshito Sasaki ,  Eiji Umetsu

IPC分类号： G01B7/30

CPC分类号： H04M1/0245 ,  B82Y25/00 ,  G01R33/07 ,  G01R33/093 ,  H04M2250/12

摘要： A magnetic sensor uses a magnetoresistance element which can be driven in a stable manner with a dipole irrespective of a polarity of an external magnetic field. A resistance value R of first magnetoresistance elements varies, and a resistance value of second magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H1 in the positive direction. A resistance value R of second magnetoresistance elements varies and a resistance value of first magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H2 in the negative direction. Accordingly, the magnetic sensor can be driven in a stable manner with a dipole irrespective of the polarity of the external magnetic field.

摘要翻译： 磁传感器使用磁阻元件，其可以与外部磁场的极性无关地以偶极子稳定地驱动。 第一磁阻元件的电阻值R变化，第二磁阻元件的电阻值不随外部磁场H 1的正方向的磁场强度的变化而变化。 第二磁阻元件的电阻值R变化，并且第一磁阻元件的电阻值不随外部磁场H 2在负方向上的磁场强度的变化而变化。 因此，无论外部磁场的极性如何，都可以用偶极子稳定地驱动磁传感器。

公开(公告)号：US07220499B2

公开(公告)日：2007-05-22

申请号：US10823484

申请日：2004-04-13

申请人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

发明人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3218 ,  H01F10/3263 ,  H01F10/3272 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/1171 ,  Y10T428/1193

摘要： A CPP giant magnetoresistive head includes lower and upper shield layers with a predetermined distance therebetween, and a giant magnetoresistive element (GMR) including pinned and free magnetic layers disposed between the upper and lower shield layers with a nonmagnetic layer interposed between the pinned and free magnetic layers. A current flows perpendicularly to the film plane of the GMR. The magnetoresistive head further includes an antiferromagnetic layer (an insulating AF of Ni—O or α-Fe2O3) provided in the rear of the GMR in a height direction to make contact with the upper or lower surface of a rear portion of the pinned magnetic layer which extends in the height direction, and an exchange coupling magnetic field is produced at the interface with the upper or lower surface, so that the magnetization direction of the pinned magnetic layer is pinned by the exchange coupling magnetic field in the height direction.

摘要翻译： CPP巨磁阻头包括其间具有预定距离的下屏蔽层和上屏蔽层，以及包括固定和自由磁性层的巨磁阻元件（GMR），其设置在上屏蔽层和下屏蔽层之间，其中非磁性层插入在固定和自由磁性层之间 层。 A电流垂直于GMR的膜平面流动。 磁阻头还包括设置在GMR后部的反铁磁层（Ni-O或α-Fe 2 O 3 3 3的绝缘AF），其高度方向为 与在高度方向上延伸的被钉扎磁性层的后部的上表面或下表面接触，并且在与上表面或下表面的界面处产生交换耦合磁场，使得固定的磁化方向 磁性层被高度方向的交换耦合磁场固定。

公开(公告)号：US07005201B2

公开(公告)日：2006-02-28

申请号：US10655939

申请日：2003-09-05

申请人： Naoya Hasegawa ,  Eiji Umetsu

发明人： Naoya Hasegawa ,  Eiji Umetsu

IPC分类号： G11B5/127 ,  G11B5/39

CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/0016 ,  G11B2005/3996 ,  Y10T428/1129 ,  Y10T428/1143 ,  Y10T428/1171 ,  Y10T428/1193

摘要： In a magnetic detecting element, second ferromagnetic layers are deposited on respective second antiferromagnetic layers. The magnetization direction of the second ferromagnetic layers is antiparallel to that of first ferromagnetic layers. A static magnetic field generated by a surface magnetic charge at the internal side surfaces of the first ferromagnetic layers is absorbed by the second ferromagnetic layers. Thus, it becomes hard that the static magnetic field from the first ferromagnetic layers enters the central portion of a free magnetic layer. Consequently, the central portion of the free magnetic layer can maintain its single magnetic domain state, and, thus, the hysteresis can be reduced and the Barkhausen noise is suppressed.

摘要翻译： 在磁检测元件中，第二铁磁层沉积在相应的第二反铁磁层上。 第二铁磁层的磁化方向与第一铁磁层的磁化方向反平行。 由第一铁磁层的内侧表面处的表面磁荷产生的静磁场被第二铁磁层吸收。 因此，来自第一铁磁层的静磁场进入自由磁性层的中心部变得困难。 因此，自由磁性层的中心部分可以保持其单个磁畴状态，因此可以减小滞后并抑制巴克豪森噪声。

公开(公告)号：US20050280954A1

公开(公告)日：2005-12-22

申请号：US11156678

申请日：2005-06-20

申请人： Naoya Hasegawa ,  Masamichi Saito ,  Eiji Umetsu

发明人： Naoya Hasegawa ,  Masamichi Saito ,  Eiji Umetsu

IPC分类号： G01R33/09 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetic sensing device is presented that has a multilayer material with a pinned magnetic layer, a nonmagnetic material layer, and a free magnetic layer. The pinned magnetic layer is a composite with a nonmagnetic intermediate layer and magnetic thin-film layers separated from each other by the nonmagnetic intermediate layer. A first nonmagnetic magnetostriction-enhancing layer is on the pinned magnetic layer and contacts a first thin-film layer placed farthest from the nonmagnetic material layer. At least one of the magnetic thin-film layers has a composite structure with a second nonmagnetic magnetostriction-enhancing layer and magnetic layers separated from each other by the second magnetostriction-enhancing layer. All of the magnetic layers are magnetized in the same direction antiparallel to the adjacent magnetic thin-film layer. At least some crystals of the first and second magnetostriction-enhancing layers and the first thin-film layer/magnetic layers are epitaxial or heteroepitaxial.

摘要翻译： 本发明提供一种具有多层材料的磁感测装置，其具有钉扎磁性层，非磁性材料层和自由磁性层。 钉扎磁性层是具有非磁性中间层和通过非磁性中间层彼此分离的磁性薄膜层的复合材料。 第一非磁性磁致伸缩增强层位于被钉扎的磁性层上，并接触放置在最远离非磁性材料层的第一薄膜层。 磁性薄膜层中的至少一个具有与第二非磁致伸缩增强层和由第二磁致伸缩增强层彼此分离的磁性层的复合结构。 所有的磁性层在与相邻的磁性薄膜层反平行的相同方向被磁化。 第一和第二磁致伸缩增强层和第一薄膜层/磁性层的至少一些晶体是外延或异质外延的。

公开(公告)号：US06921587B2

公开(公告)日：2005-07-26

申请号：US10603986

申请日：2003-06-24

申请人： Naoya Hasegawa ,  Eiji Umetsu

发明人： Naoya Hasegawa ,  Eiji Umetsu

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01L43/08 ,  H01L43/12 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T428/1143 ,  Y10T428/12986 ,  Y10T428/24479

摘要： Disclosed are a CPP magnetic sensing element employing the exchange bias method in which a sensing current is prevented from expanding in the track width direction in the multilayer film while the magnetization of the free magnetic layer is controlled properly, side reading is effectively prevented, and read output is improved, and a method for fabricating the same. First insulating layers are disposed at both sides in the track width direction of a multilayer film, a second free magnetic layer is disposed over the multilayer film and the first insulating layers, and second antiferromagnetic layers are disposed on both side regions of the second free magnetic layer.

摘要翻译： 公开了一种使用交换偏置方法的CPP磁感应元件，其中防止在多层膜中的磁道宽度方向上扩大感测电流，同时自由磁性层的磁化得到适当的控制，有效地防止了侧读 输出改善，及其制造方法。 第一绝缘层设置在多层膜的轨道宽度方向的两侧，第二自由磁性层设置在多层膜和第一绝缘层上，第二反铁磁层设置在第二自由磁体的两侧区域 层。

公开(公告)号：US06901652B2

公开(公告)日：2005-06-07

申请号：US10193675

申请日：2002-07-11

申请人： Naoya Hasegawa ,  Eiji Umetsu

发明人： Naoya Hasegawa ,  Eiji Umetsu

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/12 ,  H01F3/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A method for manufacturing magnetic sensing elements for use in magnetic sensors and hard disks. A ferromagnetic layer and a second antiferromagnetic layer are deposited on a nonmagnetic layer having a uniform thickness. The second antiferromagnetic layer is milled to form an indent. The resulting magnetic sensing element has a free magnetic layer reliably set in a single-magnetic-domain state in the track width direction.

摘要翻译： 一种用于制造用于磁传感器和硬盘的磁感应元件的方法。 铁磁层和第二反铁磁层沉积在具有均匀厚度的非磁性层上。 第二反铁磁层被研磨以形成凹口。 所得到的磁传感元件具有在磁道宽度方向上可靠地设定为单磁畴状态的自由磁性层。