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公开(公告)号：US06989327B2
公开(公告)日：2006-01-24
申请号：US10770083
申请日：2004-01-31
申请人： Manish Sharma , Thomas C. Anthony , Heon Lee
发明人： Manish Sharma , Thomas C. Anthony , Heon Lee
IPC分类号： H01L21/44
CPC分类号： H01L21/0331 , H01L21/0272 , H01L21/31144 , H01L43/12 , Y10S438/951
摘要： An aspect of the present invention is a method of forming a contact in a thin-film device. The method includes forming a liftoff stencil, depositing at least one material through the liftoff stencil, removing a portion of the liftoff stencil, forming a re-entrant profile with the remaining portion of the liftoff stencil and depositing a conductor material in contact with the at least one material on the re-entrant profile.
摘要翻译： 本发明的一个方面是在薄膜器件中形成接触的方法。 该方法包括形成剥离模板，将至少一种材料沉积通过剥离模板，去除剥离模板的一部分，与剥离模板的剩余部分形成重新进入的模型并且沉积导体材料与所述脱模模板接触。 至少一个材料在入口轮廓。
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公开(公告)号：US06906941B2
公开(公告)日：2005-06-14
申请号：US10624175
申请日：2003-07-22
申请人： Lung Tran , Thomas C. Anthony
发明人： Lung Tran , Thomas C. Anthony
CPC分类号： G11C11/16 , G11C11/1675
摘要： The invention includes a stacked magnetic memory structure. The magnetic memory structure includes a stacked magnetic memory structure. The first layer includes a first plurality of magnetic tunnel junctions. A second layer is formed adjacent to the first layer. The second layer includes a second plurality of magnetic tunnel junctions. The stacked magnetic memory structure further includes a common first group conductor connected to each of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions.
摘要翻译： 本发明包括堆叠磁存储器结构。 磁存储器结构包括堆叠磁存储器结构。 第一层包括第一多个磁性隧道结。 形成与第一层相邻的第二层。 第二层包括第二多个磁性隧道结。 层叠的磁存储器结构还包括连接到第一多个磁隧道结中的每一个和第二多个磁性隧道结的公共第一组导体。
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公开(公告)号：US06839271B1
公开(公告)日：2005-01-04
申请号：US10685618
申请日：2003-10-15
申请人： Thomas C. Anthony , Frederick A. Perner , Heon Lee
发明人： Thomas C. Anthony , Frederick A. Perner , Heon Lee
IPC分类号： H01L27/105 , G11C11/00 , G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/10 , H01L43/08
CPC分类号： G11C11/16
摘要： A magnetic memory device which comprises a magnetic memory cell that includes a magnetic material switchable between two resistive states on the application of a magnetic field. The device also comprises a wire that is connected to the magnetic memory cell and has a conductive connecting link and a conductive word or bit line which are electrically connected to each other. The connecting link is disposed between the word or bit line and the magnetic memory cell and has a thermal resistance that is larger than that of the word or bit line so as to provide a barrier for heat conduction from the magnetic memory cell to the word or bit line.
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公开(公告)号：US06819586B1
公开(公告)日：2004-11-16
申请号：US10692841
申请日：2003-10-24
IPC分类号： G11C1114
CPC分类号： G11C11/16 , G11C11/1675
摘要： An exemplary array of thermally-assisted magnetic memory structures, each of the memory structures comprises a memory cell, a write conductor contacting the memory cell, the write conductor selecting the memory cell in a first coordinate during a write operation, and a heating system contacting the memory cell. The heating system heats the memory cell during the write operation and selects the memory cell by the heating in a second coordinate.
摘要翻译： 一种热辅助磁存储器结构的示例性阵列，每个存储结构包括存储单元，与存储单元接触的写入导体，写入导体在写入操作期间以第一坐标选择存储单元，以及加热系统接触 存储单元。 加热系统在写入操作期间加热存储单元，并通过加热在第二坐标中选择存储单元。
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公开(公告)号：US06791857B2
公开(公告)日：2004-09-14
申请号：US10668442
申请日：2003-09-23
IPC分类号： G11C506
CPC分类号： G11C11/16 , H01L27/222
摘要： A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed adjacent a portion of the front surface of the write conductor, with the cladding layer terminating at spaced first and second poles adjacent the front surface of the write conductor. A data storage layer is operatively positioned adjacent the cladding layer. The distance between the poles is less than the width of the write conductor. The width of the data storage layer may be greater than or less than the distance between the poles.
摘要翻译： 用于磁存储单元的写线结构包括写入导体，其具有面向存储单元的前表面，后表面和两个侧表面。 包覆层邻近写入导体的前表面的一部分设置，其中包层终止于与写入导体的前表面相邻的间隔开的第一和第二极。 数据存储层可操作地定位在包层附近。 极之间的距离小于写导体的宽度。 数据存储层的宽度可以大于或小于极之间的距离。
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公开(公告)号：US06661688B2
公开(公告)日：2003-12-09
申请号：US10005423
申请日：2001-12-05
IPC分类号： G11C506
CPC分类号： G11C11/16 , H01L27/222
摘要： A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed adjacent a portion of the front surface of the write conductor, with the cladding layer terminating at spaced first and second poles adjacent the front surface of the write conductor. A data storage layer is operatively positioned adjacent the cladding layer. The distance between the poles is less than the width of the write conductor. The width of the data storage layer may be greater than or less than the distance between the poles.
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公开(公告)号：US06611039B2
公开(公告)日：2003-08-26
申请号：US09964770
申请日：2001-09-28
申请人： Thomas C. Anthony
发明人： Thomas C. Anthony
IPC分类号： H01L2900
CPC分类号： H01L23/5252 , H01L21/76838 , H01L21/76877 , H01L23/5226 , H01L23/5256 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： Vertically oriented nano-circuits including fuses and resistors allow for significant densities to be achieved. The vertically oriented nano-circuits can be fabricated using standard known processes such as Damascene, wet etching, reactive etching, etc. Thus little additional capital expenditure is required other than to acquire present state-of-the-art equipment. Devices using these vertically oriented nano-circuits are also inexpensive to manufacture.
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公开(公告)号：US06475812B2
公开(公告)日：2002-11-05
申请号：US09802650
申请日：2001-03-09
IPC分类号： H01L2100
CPC分类号： H01L27/222 , B82Y10/00 , G11C11/16
摘要： A method for cladding two or three sides of a top conductor for a magnetic memory device in ferromagnetic material includes forming a trench with side walls in a coating layer above the memory device. A first ferromagnetic material is deposited along the side walls of the trench. Any ferromagnetic material in a bottom of the trench can be removed. A conductor material is deposited in the trench over the memory device. A second ferromagnetic material is deposited over the conductor material in the trench to form a cladding of the ferromagnetic material around three side of the conductor.
摘要翻译： 用于包覆铁磁材料中的磁存储器件的顶部导体的两侧或三侧的方法包括在存储器件上方的涂层中形成具有侧壁的沟槽。 第一铁磁材料沿沟槽的侧壁沉积。 可以去除沟槽底部的任何铁磁材料。 导体材料沉积在存储器件上的沟槽中。 第二铁磁材料沉积在沟槽中的导体材料上，以形成围绕导体三侧的铁磁材料的包层。
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69.发明授权Memory device having memory cells with magnetic tunnel junction and tunnel junction in series 失效具有存储单元的存储器件，其具有磁性隧道结和隧道结公开(公告)号：US06473337B1
公开(公告)日：2002-10-29
申请号：US09983404
申请日：2001-10-24
申请人： Lung T. Tran , Manish Sharma , Thomas C. Anthony
发明人： Lung T. Tran , Manish Sharma , Thomas C. Anthony
IPC分类号： G11C1115
CPC分类号： H01L27/222 , G11C11/15
摘要： A memory device includes dual tunnel junction memory cells having a magnetic tunnel junction in series with a tunnel junction. The magnetic tunnel junction can be changed from a first resistance state to a second resistance state during a write operation. The magnetic tunnel junction can have a differing resistance-voltage characteristic than the tunnel junction, and the differing resistance-voltage characteristics allow the magnetic tunnel junction to be blown without blowing the tunnel junction during a write operation. The change in resistance state of the magnetic tunnel junction changes the resistance of the selected memory cell, which is detectable during a read operation.
摘要翻译： 存储器件包括双隧道结存储器单元，其具有与隧道结串联的磁性隧道结。 在写入操作期间，磁性隧道结可以从第一电阻状态改变到第二电阻状态。 磁性隧道结可以具有与隧道结不同的电阻 - 电压特性，并且不同的电阻 - 电压特性允许磁性隧道结在写入操作期间不会吹动隧道结而被吹动。 磁性隧道结的电阻状态的改变改变了所选择的存储单元的电阻，这在读取操作期间是可检测的。
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公开(公告)号：US06456525B1
公开(公告)日：2002-09-24
申请号：US09663752
申请日：2000-09-15
IPC分类号： G11C1114
CPC分类号： H01L27/222 , G11C11/16 , G11C13/0004
摘要： A data storage device includes a resistive cross point array of memory cells. Each memory cell includes a memory element and a resistive element connected in series with the memory element. The resistive elements substantially attenuate any sneak path currents flowing through shorted memory elements during read operations. The data storage device may be a Magnetic Random Access Memory (“MRAM”) device.
摘要翻译： 数据存储装置包括存储单元的电阻交叉点阵列。 每个存储单元包括与存储元件串联连接的存储元件和电阻元件。 电阻元件在读取操作期间基本上衰减流过短路存储器元件的任何潜行路径电流。 数据存储装置可以是磁随机存取存储器（“MRAM”）装置。
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