公开(公告)号：US4947682A

公开(公告)日：1990-08-14

申请号：US322790

申请日：1989-03-13

申请人： Roger N. Anderson ,  Colin F. Williams

发明人： Roger N. Anderson ,  Colin F. Williams

IPC分类号： E21B47/06 ,  G01N25/18 ,  G01V9/00

CPC分类号： E21B47/065 ,  G01N25/18 ,  G01V9/005

摘要： Oil and gas horizons in a wellbore are located by establishing from thermal logs thermal gradients for successive intervals free of drilling-induced thermal disturbances, identifying the mineral abundances surrounding the wellbore at each of said intervals, establishing ideal thermal conductivities for said mineral abundances based on assumptions that sand-rich formations have high thermal conductivities and are water-bearing and that shale-rich formations have low conductivities, determining an ideal heat flow at each interval by multiplying the thermal gradient at such interval by the ideal thermal conductivity of the mineral abundances at the interval, determining the average ideal heat flow for all of the intervals, and identifying the zones of the wellbore exhibiting anomalous ideal heat flows that are higher than the average heat flow.

摘要翻译： 井眼中的石油和天然气视野是通过从热原子热梯度建立连续的间隔，没有钻孔引起的热扰动，识别在每个间隔周围的井筒周围的矿物质丰度，建立基于以上的矿物丰度的理想热导率 富砂地层具有高导热性并且是含水的，并且富含页岩的地层具有低电导率的假设，通过将这种间隔的热梯度乘以矿物质丰度的理想热导率来确定每个间隔处的理想热流 以间隔确定所有间隔的平均理想热流，并且识别出高于平均热流的异常理想热流的井眼区域。

公开(公告)号：US4920918A

公开(公告)日：1990-05-01

申请号：US339784

申请日：1989-04-18

申请人： David V. Adams ,  Roger N. Anderson ,  Thomas E. Deacon

发明人： David V. Adams ,  Roger N. Anderson ,  Thomas E. Deacon

IPC分类号： F27B17/00 ,  C23C16/44 ,  C23C16/48 ,  H01L21/205 ,  H01L21/22 ,  H01L21/31 ,  H01L21/324

CPC分类号： C23C16/481 ,  C23C16/44

摘要： A thermal reactor system for semiconductor processing incorporates a reaction vessel with a rectangular quartz tube with reinforcing parallel quartz gussets. The gussets enable sub-ambient pressure processing, while the rectangular tube maximizes reactant gas flow uniformity over a wafer being processed. The gussets facilitate effective cooling, while minimally impairing heating of the wafer by allowing minimal wall thickness. The thermal reactor system further includes a gas source for supplying reactant gas and an exhaust handling system for removing spent gases from and establishing a reduced pressure within the reaction vessel. An array of infrared lamps is used to radiate energy through the quartz tube; the lamps are arranged in a staggered relation relative to the quartz gussets to minimize shadowing. In addition, other non-cylindrical gusseted vessel geometries are disclosed which provide for improved sub-ambient pressure thermal processing of semiconductor wafers.

公开(公告)号：US4400411A

公开(公告)日：1983-08-23

申请号：US399568

申请日：1982-07-19

申请人： Han-Tzong Yuan ,  Roger N. Anderson

发明人： Han-Tzong Yuan ,  Roger N. Anderson

IPC分类号： H01L21/20 ,  H01L21/762 ,  B05D5/12 ,  B44C1/22 ,  C03C15/00 ,  H01L7/36

CPC分类号： H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/76294 ,  Y10S148/026 ,  Y10S148/05

摘要： A process of forming silicon epitaxial refilled pockets in a thick oxide layer, three to five micrometers thick, on a substrate. Pockets are selectively formed in the thick oxide layer by plasma etching. The pockets are filled using a silicon tetrachloride source.

摘要翻译： 在衬底上形成三至五微米厚的厚氧化物层中形成硅外延填充袋的工艺。 通过等离子体蚀刻在厚氧化物层中选择性地形成口袋。 使用四氯化硅源填充口袋。