COMMUNICATION VIA A MEMORY INTERFACE
    62.
    发明申请
    COMMUNICATION VIA A MEMORY INTERFACE 审中-公开
    通过记忆接口通信

    公开(公告)号:US20150324309A1

    公开(公告)日:2015-11-12

    申请号:US14806788

    申请日:2015-07-23

    Applicant: Rambus Inc.

    Abstract: A memory space of a module connected to a memory controller via a memory interface may be used as a command buffer. Commands received by the module via the command buffer are executed by the module. The memory controller may write to the command buffer out-of-order. The memory controller may delay or eliminate writes to the command buffer. Tags associated with commands are used to specify the order commands are executed. A status buffer in the memory space of the module is used to communicate whether commands have been received or executed. Information received via the status buffer can be used as a basis for a determination to re-send commands to the command buffer.

    Abstract translation: 通过存储器接口连接到存储器控制器的模块的存储器空间可以用作命令缓冲器。 模块通过命令缓冲区接收的命令由模块执行。 存储器控制器可以无序地写入命令缓冲器。 存储器控制器可能会延迟或消除对命令缓冲区的写入。 与命令关联的标签用于指定执行顺序命令。 模块的存储空间中的状态缓冲区用于通信是否接收或执行了命令。 通过状态缓冲器接收的信息可以用作确定将命令重新发送到命令缓冲区的基础。

    CALIBRATION PROTOCOL FOR COMMAND AND ADDRESS BUS VOLTAGE REFERENCE IN LOW-SWING SINGLE-ENDED SIGNALING
    63.
    发明申请
    CALIBRATION PROTOCOL FOR COMMAND AND ADDRESS BUS VOLTAGE REFERENCE IN LOW-SWING SINGLE-ENDED SIGNALING 有权
    用于命令和地址的校准协议低电平单端信号中的总线电压参考

    公开(公告)号:US20140149618A1

    公开(公告)日:2014-05-29

    申请号:US14080724

    申请日:2013-11-14

    Applicant: Rambus Inc.

    CPC classification number: G06F13/1668 Y02D10/14

    Abstract: A single-ended receiver is coupled to an input-output (I/O) pin of a command and address (CA) bus. The receiver is configurable with dual-mode I/O support to operate the CA bus in a low-swing mode and a high-swing mode. The receiver is configurable to receive a first command on the I/O pin while in the high-swing mode, initiate calibration of the slave device to operate in the low-swing mode in response to the first command, switch the slave device to operate in the low-swing mode while the CA bus remains active, and to receive a second command on the I/O pin while in the low-swing mode.

    Abstract translation: 单端接收器耦合到命令和地址(CA)总线的输入 - 输出(I / O)引脚。 接收器可配置双模式I / O支持,以低速摆幅模式和高摆幅模式操作CA总线。 接收器可配置为在高摆幅模式下在I / O引脚上接收第一个命令,响应于第一个命令启动从设备的低速摆动模式的校准,将从设备切换到操作状态 在低速摆动模式下,CA总线保持激活状态,并在低回转模式下在I / O引脚上接收第二个命令。

    Memory with Alternative Command Interfaces
    64.
    发明申请
    Memory with Alternative Command Interfaces 有权
    内存与替代命令接口

    公开(公告)号:US20140052934A1

    公开(公告)日:2014-02-20

    申请号:US13952530

    申请日:2013-07-26

    Applicant: Rambus Inc.

    Abstract: A memory device or module selects between alternative command ports. Memory systems with memory modules incorporating such memory devices support point-to-point connectivity and efficient interconnect usage for different numbers of modules. The memory devices and modules can be of programmable data widths. Devices on the same module can be configured select different command ports to facilitate memory threading. Modules can likewise be configured to select different command ports for the same purpose.

    Abstract translation: 存储器件或模块在可选命令端口之间进行选择。 具有内存模块的内存系统包含这种内存设备,可支持点对点连接和不同数量模块的高效互连使用。 存储器件和模块可以是可编程的数据宽度。 同一模块上的设备可以配置为选择不同的命令端口,以便于内存线程化。 模块同样可以配置为为同一目的选择不同的命令端口。

    FLASH MEMORY DEVICE HAVING A CALIBRATION MODE

    公开(公告)号:US20250036581A1

    公开(公告)日:2025-01-30

    申请号:US18770876

    申请日:2024-07-12

    Applicant: Rambus Inc.

    Abstract: A method of operation of a flash integrated circuit (IC) memory device is described. The flash IC memory device has an array of memory cells and an interface to receive control, address and data signals using an internal reference voltage. The method includes, at boot-up, initializing the internal reference voltage to a default voltage. At boot-up, the interface is operable to receive, using the internal reference voltage, signals having a first voltage swing at a first signaling frequency. The method includes receiving a first command that specifies calibration of the interface during a calibration mode. The calibration mode is used to calibrate the interface to operate at a second signaling frequency and receive signals having a second voltage swing. The second voltage swing is smaller than the first voltage swing and the second signaling frequency is higher than the first signaling frequency.

    Energy-Efficient Error-Correction-Detection Storage

    公开(公告)号:US20240411640A1

    公开(公告)日:2024-12-12

    申请号:US18757268

    申请日:2024-06-27

    Applicant: Rambus Inc.

    Abstract: A memory system employs an addressing scheme to logically divide rows of memory cells into separate contiguous regions, one for data storage and another for error detection and correction (EDC) codes corresponding to that data. Data and corresponding EDC codes are stored in the same row of the same bank. Accessing data and corresponding EDC code in the same row of the same bank advantageously saves power and avoids bank conflicts. The addressing scheme partitions the memory without requiring the requesting processor to have an understanding of the memory partition.

    DRAM INTERFACE MODE WITH INTERRUPTIBLE INTERNAL TRANSFER OPERATION

    公开(公告)号:US20240152470A1

    公开(公告)日:2024-05-09

    申请号:US18388994

    申请日:2023-11-13

    Applicant: Rambus Inc.

    Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) memory device is disclosed. The memory device includes an array of storage cells and command interface circuitry to receive an internal transfer command. In response to the internal transfer command, transfer logic reads data from a first portion of the array of storage cells, transfers the data as on-chip transfer data, and writes the on-chip transfer data to a second portion of the array of storage cells. In response to the command interface circuitry receiving an interrupt command, the transfer logic pauses the internal transfer operation, and carries out an unrelated memory access operation involving at least the first portion of the array of storage cells or the second portion of the array of storage cells.

    Flash memory device having a calibration mode

    公开(公告)号:US11829308B2

    公开(公告)日:2023-11-28

    申请号:US18082446

    申请日:2022-12-15

    Applicant: Rambus Inc.

    CPC classification number: G06F13/1668 Y02D10/00

    Abstract: A method of operation of a flash integrated circuit (IC) memory device is described. The flash IC memory device has an array of memory cells and an interface to receive control, address and data signals using an internal reference voltage. The method includes, at boot-up, initializing the internal reference voltage to a default voltage. At boot-up, the interface is operable to receive, using the internal reference voltage, signals having a first voltage swing at a first signaling frequency. The method includes receiving a first command that specifies calibration of the interface during a calibration mode. The calibration mode is used to calibrate the interface to operate at a second signaling frequency and receive signals having a second voltage swing. The second voltage swing is smaller than the first voltage swing and the second signaling frequency is higher than the first signaling frequency.

    DRAM interface mode with interruptible internal transfer operation

    公开(公告)号:US11829307B2

    公开(公告)日:2023-11-28

    申请号:US17568645

    申请日:2022-01-04

    Applicant: Rambus Inc.

    Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) memory device is disclosed. The memory device includes an array of storage cells and command interface circuitry to receive an internal transfer command. In response to the internal transfer command, transfer logic reads data from a first portion of the array of storage cells, transfers the data as on-chip transfer data, and writes the on-chip transfer data to a second portion of the array of storage cells. In response to the command interface circuitry receiving an interrupt command, the transfer logic pauses the internal transfer operation, and carries out an unrelated memory access operation involving at least the first portion of the array of storage cells or the second portion of the array of storage cells.

Patent Agency Ranking