摘要:
A method and an apparatus for determining the influencing of the state of polarization of optical radiation by an optical system under test, wherein radiation with a defined entrance state of polarization is directed onto the optical system, the exit-side state of polarization is measured, and the influencing of the state of polarization is determined by the optical system with the aid of evaluation of the exit state of polarization with reference to the entrance state of polarization. An analyser arrangement which can be used for this purpose is also disclosed. The method and the apparatus are used, e.g., to determine the influencing of the state of polarization of optical radiation by an optical imaging system of prescribable aperture, the determination being performed in a pupil-resolved fashion.
摘要:
A numerical optimizing method serves to reduce harmful effects caused by intrinsic birefringence in lenses of a fluoride crystal material of cubic crystal structure in an objective, particularly a projection objective for a microlithography system. Under the optimizing method, an optimizing function which takes at least one birefringence-related image aberration into account is minimized. The birefringence-related image aberration is determined from a calculation for a light ray passing through the fluoride crystal lenses. To the extent that the birefringence-related image aberration is a function of parameters of the light ray, it depends only on geometric parameters of the light ray. The numerical optimizing method is used to produce objectives in which an optical retardation as well as an asymmetry of the optical retardation are corrected. The lenses are arranged in homogeneous groups, where each homogeneous group is corrected for the optical retardation asymmetry.
摘要:
An optical system, particularly an illumination system, of a microlithographic projection exposure apparatus contains at least one plane reflecting surface for folding the beam path. The at least one reflecting surface is arranged with respect to an optical axis of the optical system such that the intensity ratio between two mutually perpendicular polarization directions is at least substantially preserved for an axially parallel light ray deviated by the at least one reflecting surface. In accordance with a second aspect, the at least one reflecting surface is arranged such that a maximum effect on the polarization of the projection light is achieved, so as to be able to compensate for polarization dependencies which occur in other components of the illumination system.
摘要:
A mask (20) for use in a microlithographic projection exposure apparatus (10) has a support (28) on which a pattern of opaque structures (32) is applied. The intermediate spaces (36, 36′) remaining between the structures (32c) are filled with a liquid or solid dielectric material (38, 38′). This increases the polarisation dependency of the diffraction efficiency, so that the mask can be used as a polarizer.
摘要:
The invention relates to a method for measuring structures on masks (1) for photolithography, wherein firstly the mask (1) is mounted on a spatially movable platform (2). The position of the platform (2) is controlled in this case. The structure on the mask (1) is illuminated with illumination light from an illumination light source which emits coherent light. The light coming from the mask (1) is imaged onto a detection device (6) by an imaging optical unit (4) and detected. The detected signals are evaluated in an evaluation device (7) and the positions and dimensions of the structures are determined. The invention also relates to an apparatus by which these method steps, in particular, can be carried out. In this case, the accuracy of the position and dimension determination is increased by the properties of the illumination light being coordinated with the structure to be measured. For this purpose, the illumination device (3, 3′) has setting means for coordinating the properties of the illumination light with the structure to be measured.
摘要:
The disclosure relates to an optical system of a microlithographic projection exposure apparatus and to a microlithographic exposure method. An optical system of a microlithographic projection exposure apparatus includes an image rotator, which is arranged in the optical system such that light impinging on the image rotator is at least partially polarized. The image rotator rotates, for light impinging on the image rotator, both the intensity distribution and the polarization distribution of through a given angle of rotation.
摘要:
An illumination system for a microlithographic projection exposure apparatus includes an EUV light source which generates an emission beam of linearly polarized EUV illumination light. An illumination optics guides the emission beam along an optical axis which causes an illumination field in a reticle plane to be illuminated by the emission beam. The illumination system also includes an illumination subunit of the illumination system. The illumination subunit includes at least the EUV light source and a polarization setting device for setting a defined polarization of the EUV emission beam of the illumination subunit.
摘要:
An optical system, such as an illumination device or a projection objective of a microlithographic projection exposure apparatus, is disclosed. The optical system can include a polarization compensator which has at least one polarization-modifying partial element. The optical system can also include a manipulator by which the position of the at least one partial element can be altered. At least one operating mode of the optical system can be set in which the intensity, over a region which belongs to a plane perpendicular to the optical axis and which can be illuminated with light from the light source, does not exceed 20% of the maximum intensity in the plane, and the manipulator is arranged in the region.
摘要:
The disclosure relates to an optical apparatus including a light source that emits light in the form of light pulses having a pulse frequency, and including at least one optical element. The disclosure also relates to a projection exposure machine including a pulsed light source and a projection objective, and to a method for modifying the imaging behavior of such an apparatus, such as in a projection exposure machine.
摘要:
A projection objective for microlithography includes at least one optical assembly with optical elements which are disposed between an object plane and an image plane. The optical assembly includes at least one optical terminal element, which is disposed close to the image plane. A first immersion liquid is disposed on the image oriented surface of the optical terminal element. A second immersion liquid is disposed on the object oriented surface of the optical terminal element. The object oriented surface includes a first surface section for the imaging light to enter into the terminal element, and the image oriented surface includes a second surface portion for the imaging light to exit from the terminal element.