Composition for photoimaging
    61.
    发明授权
    Composition for photoimaging 失效
    光成像用组合物

    公开(公告)号:US5747223A

    公开(公告)日:1998-05-05

    申请号:US677230

    申请日:1996-07-09

    IPC分类号: G03C5/00 G03F7/038 H05K3/28

    CPC分类号: G03F7/038 H05K3/287

    摘要: An improved photoimagable cationically polymerizable epoxy based coating material is provided, that is suitable for use on a variety of substrates including epoxy-glass laminate boards cured with dicyandiamide. The material includes an epoxy resin system consisting essentially of between about 10% and about 80% by weight of a polyol resin which is a condensation product of epichlorohydrin and bisphenol A having a molecular weight of between about 40,000 and 130,000; and between about 35% and 72% by weight of an epoxidized glycidyl ether of a brominated bisphenol A having a softening point of between about 60.degree. C. and about 110.degree. C. and a molecular weight of between about 600 and 2,500. Optionally, a third resin may be added to the resin system. To this resin system is added about 0.1 to about 15 parts by weight per 100 parts of resin of a cationic photoinitiator capable of initiating polymerization of said epoxidized resin system upon exposure to actinic radiation; the system being further characterized by having an absorbance of light in the 330 to 700 nm region of less than 0.1 for a 2.0 mil thick film. Optionally a photosensitizer such as perylene and its derivatives or anthracene and its derivatives may be added.

    摘要翻译: 提供了一种改进的可光成像的可阳离子聚合的环氧基涂料,适用于各种基材,包括用双氰胺固化的环氧玻璃层压板。 该材料包括基本上由约10重量%至约80重量%的多元醇树脂组成的环氧树脂体系,多元醇树脂是分子量为约40,000至130,000的表氯醇和双酚A的缩合产物; 和约35重量%至72重量%的软化点为约60℃至约110℃,分子量为约600至2,500的溴化双酚A的环氧化缩水甘油醚。 任选地,可以向树脂体系中加入第三树脂。 向该树脂体系中添加约0.1〜约15重量份/ 100份阳离子光引发剂的树脂,其能够在暴露于光化辐射下引发所述环氧化树脂体系的聚合; 该系统的特征还在于,对于2.0密耳厚的膜,在330至700nm区域中的光的吸光度小于0.1。 任选地,可加入光敏剂如苝及其衍生物或蒽及其衍生物。

    Top imaged resists
    65.
    发明授权
    Top imaged resists 失效
    顶级成像抗皱剂

    公开(公告)号:US4810601A

    公开(公告)日:1989-03-07

    申请号:US880212

    申请日:1986-06-30

    摘要: The present invention is concerned with methods of converting a single resist layer into a multilayered resist.The upper portion of the single resist layer can be converted into a dry-etch resistant form. The conversion can be a blanket conversion of the upper portion of the resist layer or can be a patterned conversion of areas within the upper portion of the layer. A patternwise-converted resist can be oxygen plasma developed.The upper portion of the single resist layer can be patternwise converted into a chemically different composition or structure having altered absorptivity toward radiation. The difference in radiation absorptivity within the patterned upper portion of the resist enables subsequent use of blanket irradiation of the resist surface to create differences in chemical solubility between areas having the altered absorptivity toward radiation and non-altered areas. The difference in chemical solubility enables wet development of the patterned resist.

    摘要翻译: 本发明涉及将单个抗蚀剂层转化为多层抗蚀剂的方法。 单个抗蚀剂层的上部可以转化成耐干蚀刻形式。 该转换可以是抗蚀剂层的上部的覆盖转化,或者可以是层的上部内的区域的图案化转换。 图案转换的抗蚀剂可以是氧等离子体显影。 单个抗蚀剂层的上部可以被图案化地转换成具有改变的对辐射的吸收率的化学上不同的组成或结构。 在图案化的抗蚀剂上部中的辐射吸收率的差异使得随后可以使用抗蚀剂表面的毯式照射,从而在对辐射和未改变的区域具有改变的吸收率的区域之间产生化学溶解度的差异。 化学溶解度的差异使得图案化抗蚀剂的湿显影。