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    Thermally stable photoresists with high sensitivity
    5.
    发明授权
    Thermally stable photoresists with high sensitivity 失效
    热稳定的光致抗蚀剂具有高灵敏度

    公开(公告)号：US4939070A

    公开(公告)日：1990-07-03

    申请号：US215966

    申请日：1988-07-07

    申请人： William R. Brunsvold ,  Ming-Fea Chow ,  Willard E. Conley ,  Dale M. Crockatt ,  Jean M. J. Frechet ,  George J. Hefferon ,  Hiroshi Ito ,  Nancy E. Iwamoto ,  Carlton G. Willson

    发明人： William R. Brunsvold ,  Ming-Fea Chow ,  Willard E. Conley ,  Dale M. Crockatt ,  Jean M. J. Frechet ,  George J. Hefferon ,  Hiroshi Ito ,  Nancy E. Iwamoto ,  Carlton G. Willson

    IPC分类号： G03F7/039

    CPC分类号： G03F7/039 ,  Y10S430/143 ,  Y10S430/168

    摘要： The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160.degree. C., and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160.degree. C. to about 250.degree. C. that they remain soluble in common lithographic developers and strippers.The present invention also discloses resists comprising substituted polyvinyl benzoates which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow. These resists cannot be imaged using deep UV because they exhibit such a high degree of opacity below 280 nm; however, they are useful as the top, imaging layer in a bilayer resist process wherein the top layer acts as a mask during deep UV exposure of the bottom layer.

    摘要翻译： 本发明公开了特定的平版印刷聚合物材料和使用这些材料的方法，其中聚合物材料具有垂直于聚合物主链的酸不稳定性或光不稳定性基团。 聚合物材料对于深紫外线辐射具有足够的透明度以允许深紫外成像，可用于生产在大于约160℃的温度下具有热稳定性的抗蚀剂结构，并且当加热至约 160℃至约250℃，它们仍溶于普通的平版印刷显影剂和剥离剂。 本发明还公开了包含取代的聚乙烯基苯甲酸酯的抗蚀剂，其在成像之后，在塑性流动方面表现出意想不到的高热稳定性。 这些抗蚀剂不能使用深紫外成像，因为它们在280nm以下表现出如此高的不透明度; 然而，它们可用作双层抗蚀剂工艺中的顶部成像层，其中顶层在底层的深紫外线曝光期间用作掩模。

    Top imaged resists
    9.
    发明授权
    Top imaged resists 失效
    顶级成像抗皱剂

    公开(公告)号：US4810601A

    公开(公告)日：1989-03-07

    申请号：US880212

    申请日：1986-06-30

    申请人： Robert D. Allen ,  Kaolin N. Chiong ,  Ming-Fea Chow ,  Scott A. MacDonald ,  Jer-Ming Yang ,  Carlton G. Willson

    发明人： Robert D. Allen ,  Kaolin N. Chiong ,  Ming-Fea Chow ,  Scott A. MacDonald ,  Jer-Ming Yang ,  Carlton G. Willson

    IPC分类号： H01L21/027 ,  G03F7/038 ,  G03F7/20 ,  G03F7/26 ,  G03F7/38 ,  G03C3/00 ,  B05D3/06 ,  G03C5/00

    CPC分类号： G03F7/265 ,  G03F7/038 ,  G03F7/2022 ,  Y10S430/143 ,  Y10S430/167 ,  Y10S430/168

    摘要： The present invention is concerned with methods of converting a single resist layer into a multilayered resist.The upper portion of the single resist layer can be converted into a dry-etch resistant form. The conversion can be a blanket conversion of the upper portion of the resist layer or can be a patterned conversion of areas within the upper portion of the layer. A patternwise-converted resist can be oxygen plasma developed.The upper portion of the single resist layer can be patternwise converted into a chemically different composition or structure having altered absorptivity toward radiation. The difference in radiation absorptivity within the patterned upper portion of the resist enables subsequent use of blanket irradiation of the resist surface to create differences in chemical solubility between areas having the altered absorptivity toward radiation and non-altered areas. The difference in chemical solubility enables wet development of the patterned resist.

    摘要翻译： 本发明涉及将单个抗蚀剂层转化为多层抗蚀剂的方法。 单个抗蚀剂层的上部可以转化成耐干蚀刻形式。 该转换可以是抗蚀剂层的上部的覆盖转化，或者可以是层的上部内的区域的图案化转换。 图案转换的抗蚀剂可以是氧等离子体显影。 单个抗蚀剂层的上部可以被图案化地转换成具有改变的对辐射的吸收率的化学上不同的组成或结构。 在图案化的抗蚀剂上部中的辐射吸收率的差异使得随后可以使用抗蚀剂表面的毯式照射，从而在对辐射和未改变的区域具有改变的吸收率的区域之间产生化学溶解度的差异。 化学溶解度的差异使得图案化抗蚀剂的湿显影。

    APPARATUS FOR FABRICATING NANOSCALE PATTERNS IN LIGHT CURABLE COMPOSITIONS USING AN ELECTRIC FIELD
    10.
    发明申请
    APPARATUS FOR FABRICATING NANOSCALE PATTERNS IN LIGHT CURABLE COMPOSITIONS USING AN ELECTRIC FIELD 审中-公开
    使用电场制作光固化组合物中的纳米尺度图案的装置

    公开(公告)号：US20080305440A1

    公开(公告)日：2008-12-11

    申请号：US12052099

    申请日：2008-03-20

    申请人： Carlton G. Willson ,  Sidlgata V. Sreenivasan ,  Roger T. Bonnecaze

    发明人： Carlton G. Willson ,  Sidlgata V. Sreenivasan ,  Roger T. Bonnecaze

    IPC分类号： G03F7/20

    CPC分类号： B81C1/0046 ,  B05D1/40 ,  B05D3/067 ,  B05D3/145 ,  B29C43/003 ,  B29C2043/025 ,  B29C2043/3211 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    摘要： The present invention is directed to an apparatus for patterning a liquid on a substrate, with the apparatus including, a template having a pair of spaced-apart recessions with a protrusion disposed therebetween, with the protrusion being spaced-apart from the substrate a first distance and each of the pair of spaced-apart recessions being spaced-apart from the substrate a second distance, with the second distance being greater than the first distance; and a source of voltage in electrical communication with the template to produce an electric field between the template and the substrate, with a strength of the electrical field being inversely proportional to the first and second distances.

    摘要翻译： 本发明涉及一种用于在衬底上图案化液体的装置，其中该装置包括：具有一对间隔开的凹陷的模板，其中突出物设置在其间，突起与衬底间隔开第一距离 并且所述一对间隔开的凹部中的每一个与所述衬底间隔开第二距离，所述第二距离大于所述第一距离; 以及与模板电连通的电压源，以在模板和衬底之间产生电场，其中电场的强度与第一和第二距离成反比。