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公开(公告)号:US11943554B2
公开(公告)日:2024-03-26
申请号:US17605817
申请日:2020-04-14
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Seiichi Yoneda , Yusuke Negoro , Hidetomo Kobayashi
IPC: H04N25/77 , H01L27/146 , H01L29/786 , H04N25/46 , H04N25/79
CPC classification number: H04N25/77 , H01L27/14616 , H04N25/46 , H04N25/79 , H01L29/7869
Abstract: An imaging device capable of executing image processing is provided. Analog data (image data) acquired through an imaging operation is retained in a pixel, and data obtained by multiplying the analog data by a given weight coefficient in the pixel can be extracted. The data is taken into a neural network or the like, whereby processing such as image recognition can be performed. Since an enormous amount of image data can be retained in pixels in an analog data state, processing can be performed efficiently.
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公开(公告)号:US11937007B2
公开(公告)日:2024-03-19
申请号:US17628293
申请日:2020-07-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Hiroki Inoue , Seiichi Yoneda , Yusuke Negoro , Takahiko Ishizu , Hidetomo Kobayashi
Abstract: An imaging device having a motion detecting function and an image processing function is provided. The imaging device can detect a difference between a reference frame image and a comparative frame image, and can switch from a motion detecting mode to a normal image capturing mode when a significant difference is detected. A low-frame-rate operation in the motion detecting mode can reduce power consumption. Moreover, the imaging device has an image recognition function in combination with the motion detecting function, so that switching from the motion detecting mode to the normal image capturing mode can be performed when a particular image is recognized.
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公开(公告)号:US11302736B2
公开(公告)日:2022-04-12
申请号:US16940458
申请日:2020-07-28
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Seiichi Yoneda , Yusuke Negoro
IPC: H01L29/10 , H01L27/146 , H01L23/00
Abstract: An imaging device includes a first semiconductor substrate and a second semiconductor substrate. The first semiconductor substrate includes a photoelectric conversion device and a first transistor. The second semiconductor substrate includes a second transistor, a third transistor, and a fourth transistor. One electrode of the photoelectric conversion device is electrically connected to one of a source and a drain of the first transistor. The other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor and a gate of the third transistor. One of a source and a drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor. The photoelectric conversion device and at least parts of the second transistor, the third transistor, and the fourth transistor overlap with each other.
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公开(公告)号:US10552258B2
公开(公告)日:2020-02-04
申请号:US15695182
申请日:2017-09-05
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Fumika Akasawa , Seiichi Yoneda
IPC: G06F11/00 , G06F11/10 , G02F1/1335 , G09G3/3225 , G09G3/36 , H01L27/32 , G11C11/16 , G11C11/41 , H01L27/12 , H01L29/786 , H01L51/00
Abstract: A semiconductor device that is less likely to be affected by a soft error is provided. The semiconductor device includes a first memory, a second memory, a processor that can be connected to the first memory and the second memory, and a selector for selectively connecting one of the first memory and the second memory to the processor. The probability of occurrence of a soft error of the first memory is higher than that of the second memory. When an error derived from a soft error is detected in the first memory, the selector connects the second memory to the processor. The semiconductor device can stably operate even when moved from an environment where a soft error is less likely to occur to an environment where a soft error is likely to occur.
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公开(公告)号:US10170565B2
公开(公告)日:2019-01-01
申请号:US15095324
申请日:2016-04-11
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Seiichi Yoneda
IPC: H01L29/24 , H01L29/66 , H01L27/12 , H01L27/146 , H01L29/786 , H04N5/3745 , H04N5/365
Abstract: An imaging device capable of obtaining high-quality imaging data is provided. The imaging device includes a photoelectric conversion element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, and a first capacitor. Variation in the threshold voltage of amplifier transistors can be compensated. Furthermore, the imaging device can have a difference detecting function for holding differential data between imaging data for an initial frame and imaging data for a current frame and outputting a signal corresponding to the differential data.
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公开(公告)号:US10152936B2
公开(公告)日:2018-12-11
申请号:US15596264
申请日:2017-05-16
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Takashi Nakagawa , Yoshiyuki Kurokawa , Seiichi Yoneda
IPC: G09G3/36 , G09G3/18 , G09G3/3233 , G09G3/3258
Abstract: A novel circuit, a novel display portion, a novel display system, or the like is provided. A circuit, a display portion, a display system, or the like which has low power consumption is provided. A plurality kinds of video signals are generated by division of input data and supplied to different pixel groups. Thus, for example, the plurality of video signals can be supplied individually, and the operation states of a plurality of driver circuits can be controlled individually, leading to fine-grained operation with low power consumption. Accordingly, a decoder, a display portion, or a display system having low power consumption can be provided.
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公开(公告)号:US10043833B2
公开(公告)日:2018-08-07
申请号:US15293488
申请日:2016-10-14
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Seiichi Yoneda , Takuro Ohmaru
IPC: H01L27/08 , H01L27/12 , H01L29/78 , H01L27/06 , H01L29/786 , H01L29/04 , H01L27/088
Abstract: A semiconductor device includes a first transistor which includes a first gate electrode below its oxide semiconductor layer and a second gate electrode above its oxide semiconductor layer, and a second transistor which includes a first gate electrode above its oxide semiconductor layer and a second gate electrode below its oxide semiconductor layer and is provided so as to at least partly overlap with the first transistor. In the semiconductor device, a conductive film serving as the second gate electrode of the first transistor and the second gate electrode of the second transistor is shared between the first transistor and the second transistor. Note that the second gate electrode not only controls the threshold voltages (Vth) of the first transistor and the second transistor but also has an effect of reducing interference of an electric field applied from respective first gate electrodes of the first transistor and the second transistor.
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公开(公告)号:US09569713B2
公开(公告)日:2017-02-14
申请号:US14920161
申请日:2015-10-22
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Seiichi Yoneda , Yukio Maehashi
IPC: G06K19/06 , G06K19/07 , G06K19/077 , G06K19/073
CPC classification number: G06K19/0716 , G06K19/0702 , G06K19/073 , G06K19/07707
Abstract: To provide a semiconductor device that is capable of displaying data even when a radio signal is not supplied. The semiconductor device includes an antenna, a battery, a sensor, a nonvolatile memory, a first circuit, and a second circuit. Power supplied from the antenna is converted into first power via the first circuit. The battery stores the first power and supplies second power. The sensor performs sensing with the second power. The nonvolatile memory stores analog data acquired by the sensor. The second power is used to store the analog data. The second circuit converts the analog data into digital data with the use of the first power. The nonvolatile memory preferably includes an oxide semiconductor transistor.
Abstract translation: 提供即使在不提供无线电信号的情况下也能够显示数据的半导体器件。 半导体器件包括天线,电池,传感器,非易失性存储器,第一电路和第二电路。 从天线供电的电源经由第一电路转换为第一电源。 电池存储第一个电源并提供第二个电源。 传感器用第二个电源进行感测。 非易失性存储器存储由传感器获取的模拟数据。 第二个电源用于存储模拟数据。 第二个电路通过使用第一个电源将模拟数据转换成数字数据。 非易失性存储器优选地包括氧化物半导体晶体管。
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公开(公告)号:US20140325171A1
公开(公告)日:2014-10-30
申请号:US14259534
申请日:2014-04-23
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Seiichi Yoneda
IPC: G06F11/14
CPC classification number: G06F11/141 , G06F11/1441 , G11C14/0063
Abstract: The amount of data to be backed up and recovered is reduced when supply of power to a semiconductor device is stopped and restarted. A backup need determination circuit provided in the semiconductor device reads the kind of instruction decoded by a decoder and determines whether data needs to be backed up from a volatile register to a nonvolatile register. With a structure according to one embodiment of the present invention, it is possible to select necessary data from data used for operation in a logic circuit before the power supply is stopped and after the power supply is restarted. Data that is necessary after the power supply is restarted can be backed up from the volatile register to the nonvolatile register before the power supply is stopped. Data that is unnecessary is not backed up from the volatile register to the nonvolatile register before the power supply is stopped.
Abstract translation: 当停止并重新启动向半导体器件供电时,要备份和恢复的数据量减少。 设置在半导体器件中的备用需求确定电路读取由解码器解码的指令种类,并确定数据是否需要从易失性寄存器备份到非易失性寄存器。 利用根据本发明的一个实施例的结构,可以在电源停止之前和在电源重新启动之后,在逻辑电路中用于操作的数据中选择必要的数据。 在电源停止之前,电源重启后所需的数据可以从易失性寄存器备份到非易失性寄存器。 在电源停止之前,不需要的数据不会从易失性寄存器备份到非易失性寄存器。
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公开(公告)号:US20140003146A1
公开(公告)日:2014-01-02
申请号:US13923696
申请日:2013-06-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Seiichi Yoneda , Atsuo Isobe , Yuji Iwaki , Koichiro Kamata , Yasuyuki Takahashi , Masumi Nomura
IPC: G11C16/30
CPC classification number: G11C16/30 , G06F1/3203 , G06F1/3275 , G11C7/106 , G11C7/1087 , G11C7/20 , G11C2207/2227 , Y02D10/13 , Y02D10/14
Abstract: A signal processing circuit that consumes less power by stop of supply of power for a short time. In a storage element, before supply of power is stopped, data in a first storage circuit is stored to a second storage circuit, and the data is read from the second storage circuit and a verification circuit can determine whether or not the data in the second storage circuit matches the data in the first storage circuit. After supply of power is restarted, the data in the second storage circuit is stored to the first storage circuit, and the verification circuit can determine whether or not the data in the second storage circuit matches the data in the first storage circuit. In such a manner, verification can be performed without requiring a time for verification.
Abstract translation: 信号处理电路通过在短时间内停止供电而消耗较少的功率。 在存储元件中,在停止供电之前,将第一存储电路中的数据存储到第二存储电路,并且从第二存储电路读取数据,并且验证电路可以确定第二存储电路中的数据 存储电路与第一存储电路中的数据匹配。 在重新开始供电之后,第二存储电路中的数据被存储到第一存储电路,并且验证电路可以确定第二存储电路中的数据是否与第一存储电路中的数据匹配。 以这种方式,可以执行验证,而不需要验证时间。
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