公开(公告)号：US20140048801A1

公开(公告)日：2014-02-20

申请号：US14064294

申请日：2013-10-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yusuke Nonaka ,  Takatsugu Omata ,  Tatsuya Honda ,  Akiharu Miyanaga ,  Hiroki Ohara

IPC: H01L29/786 ,  H01L29/26

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/263 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/7869

Abstract: A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved. For improvement of the reliability of the transistor, a buffer layer is provided between a drain electrode layer (or a source electrode layer) and an oxide semiconductor layer such that the end portion of the buffer layer is beyond the side surface of the drain electrode layer (or the source electrode layer) when seen in a cross section, whereby the buffer layer can relieve the concentration of electric field. The buffer layer is a single layer or a stacked layer including a plurality of layers, and includes, for example, an In—Ga—Zn—O film containing nitrogen, an In—Sn—O film containing nitrogen, an In—Sn—O film containing SiOx, or the like.

Abstract translation: 提供具有新颖结构的半导体器件或半导体器件的制造方法。 例如，提高了以高电压或大电流驱动的晶体管的可靠性。 为了提高晶体管的可靠性，在漏电极层（或源极电极层）和氧化物半导体层之间设置缓冲层，使得缓冲层的端部超出漏电极层的侧面 （或源电极层），从而缓冲层能够缓和电场的集中。 缓冲层是包含多个层的单层或层叠层，例如包含氮的In-Ga-Zn-O膜，含有氮的In-Sn-O膜，In-Sn-O系膜， O膜等。

公开(公告)号：US11672136B2

公开(公告)日：2023-06-06

申请号：US17178417

申请日：2021-02-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Nobuharu Ohsawa ,  Yusuke Nonaka ,  Takahiro Ishisone ,  Satoshi Seo ,  Takuya Kawata

IPC: H10K50/13 ,  H10K50/11 ,  H10K59/32 ,  H10K50/12 ,  H10K50/15 ,  H10K50/16 ,  H10K85/30 ,  H10K101/00 ,  H10K85/60 ,  H10K102/00

CPC classification number: H10K50/131 ,  H10K50/11 ,  H10K50/121 ,  H10K50/15 ,  H10K50/16 ,  H10K59/32 ,  H10K85/342 ,  H10K85/611 ,  H10K85/615 ,  H10K85/622 ,  H10K85/626 ,  H10K85/633 ,  H10K85/636 ,  H10K85/654 ,  H10K85/6572 ,  H10K85/6576 ,  H10K2101/10 ,  H10K2101/27 ,  H10K2101/90 ,  H10K2102/351

Abstract: An object of one embodiment of the present invention is to provide a multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance, a separation layer containing a substance having a hole-transport property and a substance having an electron-transport property, and a second light-emitting layer containing two kinds of organic compounds that form an exciplex and a substance that can convert triplet excitation energy into luminescence. Note that a light-emitting element in which light emitted from the first light-emitting layer has an emission spectrum peak on the shorter wavelength side than an emission spectrum peak of the second light-emitting layer is more effective.

公开(公告)号：US11211467B2

公开(公告)日：2021-12-28

申请号：US16755208

申请日：2018-10-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tomoki Hiramatsu ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Shota Sambonsuge ,  Yasumasa Yamane ,  Yuta Endo

IPC: H01L29/51 ,  H01L21/8238

Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first insulator; a first oxide provided over the first insulator; a second oxide provided over the first oxide; a first conductor and a second conductor provided apart from each other over the second oxide; a third oxide provided over the second oxide, the first conductor, and the second conductor; a second insulating film provided over the third oxide; and a third conductor provided over the second oxide with the third oxide and the second insulating film positioned therebetween. The third oxide contains a metal element and nitrogen, and the metal element is bonded to nitrogen.

公开(公告)号：US11195758B2

公开(公告)日：2021-12-07

申请号：US16643195

申请日：2018-08-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toshihiko Takeuchi ,  Tsutomu Murakawa ,  Hiroki Komagata ,  Daisuke Matsubayashi ,  Noritaka Ishihara ,  Yusuke Nonaka

IPC: H01L27/088 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/108 ,  H01L29/786

Abstract: A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided.
The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

公开(公告)号：US10930873B2

公开(公告)日：2021-02-23

申请号：US16454296

申请日：2019-06-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Nobuharu Ohsawa ,  Yusuke Nonaka ,  Takahiro Ishisone ,  Satoshi Seo ,  Takuya Kawata

IPC: H01L51/50 ,  H01L27/32 ,  H01L51/00

Abstract: An object of one embodiment of the present invention is to provide a multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance, a separation layer containing a substance having a hole-transport property and a substance having an electron-transport property, and a second light-emitting layer containing two kinds of organic compounds that form an exciplex and a substance that can convert triplet excitation energy into luminescence. Note that a light-emitting element in which light emitted from the first light-emitting layer has an emission spectrum peak on the shorter wavelength side than an emission spectrum peak of the second light-emitting layer is more effective.

公开(公告)号：US10916663B2

公开(公告)日：2021-02-09

申请号：US16021490

申请日：2018-06-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Hiroki Ohara ,  Tatsuya Honda ,  Takatsugu Omata ,  Yusuke Nonaka ,  Masahiro Takahashi ,  Akiharu Miyanaga

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/10 ,  H01L29/24

Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.

公开(公告)号：US10439005B2

公开(公告)日：2019-10-08

申请号：US15341053

申请日：2016-11-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro Ishisone ,  Satoshi Seo ,  Yusuke Nonaka ,  Nobuharu Ohsawa

IPC: H01L51/50 ,  H01L51/52 ,  H01L27/32 ,  H01L51/00

Abstract: A multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application is provided. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance and a second light-emitting layer containing two kinds of organic compounds and a substance that can convert triplet excitation energy into luminescence. Note that light emitted from the first light-emitting layer has an emission peak on the shorter wavelength side than light emitted from the second light-emitting layer.

公开(公告)号：US10374186B2

公开(公告)日：2019-08-06

申请号：US15983223

申请日：2018-05-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Nobuharu Ohsawa ,  Yusuke Nonaka ,  Takahiro Ishisone ,  Satoshi Seo ,  Takuya Kawata

IPC: H01L51/50 ,  H01L27/32 ,  H01L51/00

Abstract: An object of one embodiment of the present invention is to provide a multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance, a separation layer containing a substance having a hole-transport property and a substance having an electron-transport property, and a second light-emitting layer containing two kinds of organic compounds that form an exciplex and a substance that can convert triplet excitation energy into luminescence. Note that a light-emitting element in which light emitted from the first light-emitting layer has an emission spectrum peak on the shorter wavelength side than an emission spectrum peak of the second light-emitting layer is more effective.

公开(公告)号：US10290744B2

公开(公告)日：2019-05-14

申请号：US15422945

申请日：2017-02-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Honda ,  Masashi Tsubuku ,  Yusuke Nonaka ,  Takashi Shimazu ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L29/51 ,  G02F1/1333 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/1343 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L27/32

Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

公开(公告)号：US10153346B2

公开(公告)日：2018-12-11

申请号：US15079156

申请日：2016-03-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Yusuke Nonaka ,  Hiroshi Kanemura

IPC: H01L29/24 ,  H01L29/04 ,  H01L29/786 ,  H01L21/02 ,  H01L27/12

Abstract: To manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor. An oxide semiconductor film is deposited by a sputtering method with the use of a polycrystalline sputtering target. In that case, partial pressure of water in a deposition chamber before or in the deposition is set to be lower than or equal to 10−3 Pa, preferably lower than or equal to 10−4 Pa, more preferably lower than or equal to 10−5 Pa. Thus, a dense oxide semiconductor film is obtained. The density of the oxide semiconductor film is higher than 6.0 g/cm3 and lower than 6.375 g/cm3.