公开(公告)号：US20150303098A1

公开(公告)日：2015-10-22

申请号：US14686229

申请日：2015-04-14

Applicant: Soitec ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed ,  Damien Massy ,  Frederic Mazen ,  Francois Rieutord

IPC: H01L21/762 ,  H01L21/683

CPC classification number: H01L21/76254 ,  H01L21/6835 ,  H01L2221/68363 ,  H01L2221/68381

Abstract: A method for transferring a useful layer onto a support includes the following processes: formation of a fragilization plane through the implantation of light species into a first substrate in such a way as to form a useful layer between this plane and a surface of the first substrate; application of the support onto the surface of the first substrate to form an assembly to be fractured having two exposed sides; thermal fragilization treatment of the assembly to be fractured; and initiation and self-sustained propagation of a fracture wave in the first substrate along the fragilization plane. At least one of the sides of the assembly to be fractured is in close contact, over a contact zone, with an absorbent element suitable for capturing and dissipating acoustic vibrations emitted during the initiation and/or propagation of the fracture wave.

Abstract translation: 用于将有用层转移到载体上的方法包括以下过程：通过将光物质注入到第一基底中形成脆性平面，以便在该平面和第一基底的表面之间形成有用层 ; 将支撑件施加到第一基板的表面上以形成具有两个暴露侧面的要断裂的组件; 热破碎处理组件要断裂; 以及沿着脆化平面在第一衬底中的断裂波的引发和自持续传播。 待破裂的组件的至少一个侧面在接触区域上紧密接触，其中吸收单元适于捕获和消散在断裂波的起始和/或传播期间发射的声振动。

公开(公告)号：US20150231790A1

公开(公告)日：2015-08-20

申请号：US14423607

申请日：2013-09-03

Applicant: Soitec

Inventor： Didier Landru

IPC: B26D3/28 ,  B26D7/08 ,  B26D7/00

CPC classification number: B26D3/28 ,  B26D7/0006 ,  B26D7/08 ,  B26D7/088 ,  B32B38/10 ,  B32B43/006 ,  H01L21/67092 ,  Y10T156/1179 ,  Y10T156/1184 ,  Y10T156/1961 ,  Y10T156/1967

Abstract: This disclosure relates to a device for separating two substrates to be utilized in electronics, optics, optoelectronics and/or photovoltaics. The device separates the substrates at an interface, the device comprising: a holder; a member for retaining the structure, the member being mounted on the holder; a tool for separating the two substrates, also mounted on the holder; and means for moving the separating tool and/or means for moving the retaining member relative to the holder so as to bring them closer together or move them farther apart from each other, preferably over a limited range of travel. This device is noteworthy in that the separating tool comprises a leading edge that has, in cross-section, in succession from its tip or its front edge to its back, a tapered portion that is extended by a flared portion.

Abstract translation: 本公开涉及用于分离待用于电子，光学，光电子学和/或光伏的两个基板的装置。 该装置在界面处分离基板，该装置包括：保持器; 用于保持结构的构件，构件安装在保持器上; 用于分离两个基板的工具，其也安装在保持器上; 以及用于移动分离工具和/或用于相对于保持器移动保持构件的装置的装置，以使它们更靠近在一起，或者使它们彼此远离，优选地在有限的行程范围内移动。 该装置是值得注意的，因为分离工具包括从其尖端或其前边缘到其后部连续地具有横截面的前缘，锥形部分由扩口部分延伸。

公开(公告)号：US20150214098A1

公开(公告)日：2015-07-30

申请号：US14425205

申请日：2013-09-03

Applicant: Soitec

Inventor： Didier Landru

IPC: H01L21/762

CPC classification number: H01L21/76251 ,  H01L21/76254 ,  Y10T29/49822

Abstract: A process for fabrication of a structure includes assembling at least two substrates. At least one of these two substrates is intended to be used in electronics, optics, optoelectronics and/or photovoltaics. The structure includes at least two separation interfaces extending parallel to the main faces of the structure. The assembling process is carried out with a view to a separation of the structure along one interface selected from the interfaces, the separation being carried out by inserting a blade between the substrates and applying a parting force, via the blade. The interface chosen for the separation is formed so that it is more sensitive than the other interface(s) to stress corrosion. Separation occurs due to the combined action of said parting force and of a fluid capable of breaking siloxane (Si—O—Si) bonds present at the interface. A structure obtained by such a process may be separated along the chosen interface.

Abstract translation: 一种用于制造结构的方法包括组装至少两个基底。 这两个基板中的至少一个旨在用于电子，光学，光电子和/或光伏。 该结构包括平行于该结构主面延伸的至少两个分离界面。 为了沿着从界面中选择的一个界面分离结构，进行组装过程，该分离是通过在基板之间插入叶片并通过叶片施加分离力来进行的。 选择用于分离的界面形成为使其比其他界面更加敏感以应力腐蚀。 由于所述分离力和能够破坏在界面处存在的硅氧烷（Si-O-Si）键的流体的组合作用，发生分离。 通过这种处理获得的结构可以沿所选择的界面分离。

公开(公告)号：US20140357093A1

公开(公告)日：2014-12-04

申请号：US14362208

申请日：2012-12-13

Applicant: Soitec

Inventor： Didier Landru ,  Carole David ,  Ionut Radu ,  Lucianna Capello ,  Yann Sinquin

IPC: H01L21/268 ,  H01L21/324

CPC classification number: H01L21/268 ,  H01L21/02354 ,  H01L21/2007 ,  H01L21/324 ,  H01L21/428

Abstract: The invention relates to a process for stabilizing a bonding interface, located within a structure for applications in the fields of electronics, optics and/or optoelectronics and that comprises an oxide layer buried between an active layer and a receiver substrate, the bonding interface having been obtained by molecular adhesion. In accordance with the invention, the process further comprises irradiating this structure with a light energy flux provided by a laser, so that the flux, directed toward the structure, is absorbed by the energy conversion layer and converted to heat in this layer, and in that this heat diffuses into the structure toward the bonding interface, so as to thus stabilize the bonding interface.

Abstract translation: 本发明涉及一种用于稳定接合界面的方法，该接合界面位于用于电子学，光学和/或光电子学领域的结构内，并且包括掩埋在有源层和接收器衬底之间的氧化物层，所述接合界面已被 通过分子粘附获得。 根据本发明，该方法还包括用激光提供的光能通量照射该结构，使得朝向结构的通量被能量转换层吸收并在该层中被转换成热 这种热量向结合界面扩散到结构中，从而稳定接合界面。

公开(公告)号：US20250022748A1

公开(公告)日：2025-01-16

申请号：US18886782

申请日：2024-09-16

Applicant: Soitec

Inventor： Didier Landru ,  Bruno Ghyselen

IPC: H01L21/762 ,  H01L21/265 ,  H01L21/78

Abstract: A process for transferring blocks from a donor to a receiver substrate, comprises: arranging a mask facing a free surface of the donor substrate, the mask having one or more openings that expose the free surface of the donor substrate, the openings distributed according to a given pattern; forming, by ion implantation through the mask, an embrittlement plane in the donor substrate vertically in line with at least one region exposed through the mask, the embrittlement plane delimiting a respective surface region; forming a block that is raised relative to the free surface of the donor substrate localized vertically in line with each respective embrittlement plane, the block comprising the respective surface region; bonding the donor substrate to the receiver substrate via each block located at the bonding interface, after removing the mask; and detaching the donor substrate along the localized embrittlement planes to transfer blocks onto the receiver substrate.

公开(公告)号：US12198983B2

公开(公告)日：2025-01-14

申请号：US17756615

申请日：2020-10-26

Applicant: Soitec

Inventor： Ionut Radu ,  Hugo Biard ,  Christophe Maleville ,  Eric Guiot ,  Didier Landru

IPC: H01L21/78 ,  C23C16/32 ,  C30B25/20 ,  C30B29/36 ,  C30B31/22 ,  C30B33/10 ,  H01L21/02

Abstract: A method of producing a composite structure comprising a thin layer of monocrystalline silicon carbide arranged on a carrier substrate of silicon carbide comprises: a) a step of provision of an initial substrate of monocrystalline silicon carbide, b) a step of epitaxial growth of a donor layer of monocrystalline silicon carbide on the initial substrate, to form a donor substrate, c) a step of ion implantation of light species into the donor layer, to form a buried brittle plane delimiting the thin layer, d) a step of formation of a carrier substrate of silicon carbide on the free surface of the donor layer, comprising a deposition at a temperature of between 400° C. and 1100° C., e) a step of separation along the buried brittle plane, to form the composite structure and the remainder of the donor substrate, and f) a step of chemical-mechanical treatment(s) of the composite structure.

公开(公告)号：US12165900B2

公开(公告)日：2024-12-10

申请号：US18359807

申请日：2023-07-26

Applicant: Soitec

Inventor： Marcel Broekaart ,  Ionut Radu ,  Didier Landru

IPC: H01L21/683 ,  H01L21/48 ,  H01L21/762

Abstract: The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.

公开(公告)号：US20240147864A1

公开(公告)日：2024-05-02

申请号：US18403485

申请日：2024-01-03

Applicant: Soitec

Inventor： Didier Landru

IPC: H10N30/073 ,  H03H9/02 ,  H10N30/00 ,  H10N30/50 ,  H10N30/88

CPC classification number: H10N30/073 ,  H03H9/02574 ,  H10N30/10513 ,  H10N30/508 ,  H10N30/88

Abstract: A hybrid structure and a method for manufacturing a hybrid structure comprising an effective layer of piezoelectric material having an effective thickness and disposed on a supporting substrate having a substrate thickness and a thermal expansion coefficient lower than that of the effective layer includes: a) a step of providing a bonded structure comprising a piezoelectric material donor substrate and the supporting substrate, b) a first step of thinning the donor substrate to form a thinned layer having an intermediate thickness and disposed on the supporting substrate, the assembly forming a thinned structure; c) a step of heat treating the thinned structure at an annealing temperature; and d) a second step, after step c), of thinning the thinned layer to form the effective layer. The method also comprises, prior to step b), a step a′) of determining a range of intermediate thicknesses that prevent the thinned structure from being damaged during step c).

公开(公告)号：US11930710B2

公开(公告)日：2024-03-12

申请号：US17663569

申请日：2022-05-16

Applicant: Soitec

Inventor： Didier Landru

IPC: H10N30/073 ,  H03H9/02 ,  H10N30/00 ,  H10N30/50 ,  H10N30/88

CPC classification number: H10N30/073 ,  H03H9/02574 ,  H10N30/10513 ,  H10N30/508 ,  H10N30/88

Abstract: A hybrid structure and a method for manufacturing a hybrid structure comprising an effective layer of piezoelectric material having an effective thickness and disposed on a supporting substrate having a substrate thickness and a thermal expansion coefficient lower than that of the effective layer includes: a) a step of providing a bonded structure comprising a piezoelectric material donor substrate and the supporting substrate, b) a first step of thinning the donor substrate to form a thinned layer having an intermediate thickness and disposed on the supporting substrate, the assembly forming a thinned structure; c) a step of heat treating the thinned structure at an annealing temperature; and d) a second step, after step c), of thinning the thinned layer to form the effective layer. The method also comprises, prior to step b), a step a′) of determining a range of intermediate thicknesses that prevent the thinned structure from being damaged during step c).

公开(公告)号：US20240021461A1

公开(公告)日：2024-01-18

申请号：US18359807

申请日：2023-07-26

Applicant: Soitec

Inventor： Marcel Broekaart ,  Ionut Radu ,  Didier Landru

IPC: H01L21/683 ,  H01L21/48 ,  H01L21/762

CPC classification number: H01L21/6835 ,  H01L21/4803 ,  H01L21/76251 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2221/6835

Abstract: The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.