公开(公告)号：US10354708B2

公开(公告)日：2019-07-16

申请号：US15553769

申请日：2016-01-19

Applicant: SONY CORPORATION

Inventor： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11B5/39 ,  G11C11/56 ,  H01F10/32 ,  H01L27/22

Abstract: A storage device according to one embodiment of the present technology includes a magnetization fixed layer, an intermediate layer, and a storage layer. The magnetization fixed layer is configured to have magnetization in an orientation perpendicular to a film surface and a constant magnetization direction. The intermediate layer includes a non-magnetic body and is disposed on the magnetization fixed layer. The storage layer includes an outer circumferential portion and a center portion, is disposed to face the magnetization fixed layer with the intermediate layer sandwiched therebetween, and is configured to have a variable magnetization direction, the outer circumferential portion having magnetization in an orientation perpendicular to a film surface, the center portion being formed by being surrounded by the outer circumferential portion and having magnetization inclined from the orientation perpendicular to the film surface.

公开(公告)号：US20180233660A1

公开(公告)日：2018-08-16

申请号：US15933512

申请日：2018-03-23

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC: H01L43/10 ,  H01L43/08 ,  B82Y10/00 ,  H01L43/02 ,  H01L27/22 ,  B82Y25/00

CPC classification number: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

公开(公告)号：US09978933B2

公开(公告)日：2018-05-22

申请号：US15585857

申请日：2017-05-03

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC: H01L43/00 ,  H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

公开(公告)号：US09917248B2

公开(公告)日：2018-03-13

申请号：US15371863

申请日：2016-12-07

Applicant: Sony Corporation

Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane

IPC: H01L43/02 ,  H01L27/22 ,  H01L27/24 ,  H01L43/08 ,  H01L43/10 ,  G11B5/39 ,  G01R33/09 ,  G11C11/16 ,  H01L29/82

CPC classification number: H01L43/02 ,  G01R33/093 ,  G11B5/3909 ,  G11C11/16 ,  G11C11/161 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L27/228 ,  H01L27/2481 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

Abstract: A memory element including a layered structure including a memory layer having magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information stored therein, a magnetization-fixed layer having magnetization perpendicular to the film face, which becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.

公开(公告)号：US09818932B2

公开(公告)日：2017-11-14

申请号：US15031092

申请日：2014-10-20

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida

IPC: H01L43/02 ,  G11C11/16 ,  H01F10/12 ,  H01L43/08 ,  H01L43/10 ,  H01F10/32 ,  H01L27/22

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A storage element and storage devices containing the same, having a layered structure and being configured for storing information are disclosed. In one example, the storage element comprises a storage portion with a storage magnetization that is perpendicular to a film surface of the layered structure, wherein a direction of the storage magnetization is configured to change according to the information. The storage element also includes a fixed magnetization portion with reference magnetization serving as a reference to the storage magnetization, and an intermediate portion between the storage portion and the fixed magnetization portion that is made of a non-magnetic material. The fixed magnetization portion includes a laminated ferrimagnetic structure that comprises a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The fixed magnetization portion includes a first magnetic material that is an alloy or a laminated structure including Pt, Co, and Y.

公开(公告)号：US09748470B2

公开(公告)日：2017-08-29

申请号：US15233468

申请日：2016-08-10

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: G11C11/14 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  G11B5/39 ,  H01F10/32 ,  G11C11/155 ,  G11C11/16 ,  G11C11/15

CPC classification number: G11C11/161 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/15 ,  G11C11/155 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

公开(公告)号：US09728716B2

公开(公告)日：2017-08-08

申请号：US15007382

申请日：2016-01-27

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC: H01L43/00 ,  H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

公开(公告)号：US09484528B2

公开(公告)日：2016-11-01

申请号：US15095553

申请日：2016-04-11

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: H01L29/82 ,  H01L43/10 ,  H01L43/08 ,  G11C11/16

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08

Abstract: A memory element includes a layered structure: a memory layer having a magnetization direction changed depending on information, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, including a first ferromagnetic layer having a magnetization direction that is inclined from a direction perpendicular to a film face, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer and bonded to the first ferromagnetic layer via the bonding layer, having a magnetization direction that is inclined from the direction perpendicular to the film face, a magnetization-fixed layer having a fixed magnetization direction, an intermediate layer that is provided between the memory layer and the magnetization-fixed layer, and is contacted with the first ferromagnetic layer, and a cap layer that is contacted with the second ferromagnetic layer.

Abstract translation: 存储元件包括分层结构：具有根据信息改变的磁化方向的存储层，通过在分层结构的层叠方向施加电流来改变磁化方向，以将信息记录在存储层中，该信息包括第一铁磁 层，其具有从垂直于膜面的方向倾斜的磁化方向，层压在所述第一铁磁层上的接合层和层压在所述接合层上并通过所述接合层接合到所述第一铁磁性层的第二铁磁层， 从垂直于膜面的方向倾斜的磁化方向，具有固定的磁化方向的磁化固定层，设置在存储层和磁化固定层之间的中间层，并与第一铁磁体 层和与第二铁磁体接触的盖层 c层。

公开(公告)号：US09478731B2

公开(公告)日：2016-10-25

申请号：US14430065

申请日：2013-08-22

Applicant: Sony Corporation

Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane

IPC: H01L43/08 ,  H01L43/10 ,  G11B5/39 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16

CPC classification number: G11C11/161 ,  G11B5/3909 ,  G11C2213/35 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Provided is a storage cell that makes it possible to improve TMR characteristics, a storage device and a magnetic head that include the storage cell. The storage cell includes a layer structure including a storage layer in which a direction of magnetization is varied in correspondence with information, a magnetization pinned layer having magnetization that is perpendicular to a film surface and serves as a reference of information stored in the storage layer, and an intermediate layer that is provided between the storage layer and the magnetization pinned layer and is made of a nonmagnetic body. Carbon is inserted in the intermediate layer, and feeding a current in a laminating direction of the layer structure allows the direction of magnetization in the storage layer to be varied, to allow information to be recorded in the storage layer.

Abstract translation: 提供一种能够提高TMR特性的存储单元，包括存储单元的存储装置和磁头。 存储单元包括：层结构，其包括存储层，其中磁化方向与信息相对应地变化，磁化固定层具有垂直于膜表面的磁化，并且用作存储在存储层中的信息的参考; 以及设置在所述存储层和所述磁化被钉扎层之间并由非磁性体制成的中间层。 将碳插入中间层，并且沿着层结构的层叠方向供给电流允许存储层中的磁化方向改变，以便将信息记录在存储层中。

公开(公告)号：US09343657B2

公开(公告)日：2016-05-17

申请号：US14429230

申请日：2013-08-09

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: H01L43/08 ,  G11B5/39 ,  G11C11/16 ,  H01L43/10 ,  H01F10/32 ,  H01L43/02 ,  B82Y25/00 ,  H01L27/22 ,  H01F10/12

CPC classification number: G11B5/3146 ,  B82Y25/00 ,  G11B5/1278 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L23/528 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: There is provided a storage element including a layered construction including a storage layer that has magnetization perpendicular to a surface of the storage layer and whose direction of magnetization is changed corresponding to information, a pinned magnetization layer that has magnetization perpendicular to a surface of the pinned magnetization layer and serves as a standard for information stored in the storage layer, and an insulating layer that is composed of a non-magnetic material and is provided between the storage layer and the pinned magnetization layer.

Abstract translation: 提供了一种存储元件，其包括层叠结构，其包括存储层，该存储层具有垂直于存储层的表面的磁化强度，并且其磁化方向根据信息而改变;具有垂直于固定的表面的磁化的钉扎磁化层 并且用作存储在存储层中的信息的标准，以及由非磁性材料构成并设置在存储层和被钉扎磁化层之间的绝缘层。