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公开(公告)号：US10692521B2
公开(公告)日：2020-06-23
申请号：US16593687
申请日：2019-10-04
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
IPC: G11B5/31 , H01F10/32 , G11B5/39 , G11C11/16 , H01L43/10 , H01L43/08 , H01L43/02 , G11B5/127 , H01L23/528 , H01L27/22 , H01F10/12 , B82Y25/00
Abstract: A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.
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公开(公告)号：US10354708B2
公开(公告)日：2019-07-16
申请号：US15553769
申请日：2016-01-19
Applicant: SONY CORPORATION
Inventor： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
Abstract: A storage device according to one embodiment of the present technology includes a magnetization fixed layer, an intermediate layer, and a storage layer. The magnetization fixed layer is configured to have magnetization in an orientation perpendicular to a film surface and a constant magnetization direction. The intermediate layer includes a non-magnetic body and is disposed on the magnetization fixed layer. The storage layer includes an outer circumferential portion and a center portion, is disposed to face the magnetization fixed layer with the intermediate layer sandwiched therebetween, and is configured to have a variable magnetization direction, the outer circumferential portion having magnetization in an orientation perpendicular to a film surface, the center portion being formed by being surrounded by the outer circumferential portion and having magnetization inclined from the orientation perpendicular to the film surface.
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公开(公告)号：US20190044059A1
公开(公告)日：2019-02-07
申请号：US16156736
申请日：2018-10-10
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
CPC classification number: H01L43/10 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/329 , H01F41/325 , H01L27/228 , H01L43/02 , H01L43/08
Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.
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公开(公告)号：US20180233660A1
公开(公告)日：2018-08-16
申请号：US15933512
申请日：2018-03-23
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
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公开(公告)号：US09978933B2
公开(公告)日：2018-05-22
申请号：US15585857
申请日：2017-05-03
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
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Patent Agency Ranking
公开(公告)号：US09917248B2
公开(公告)日：2018-03-13
申请号：US15371863
申请日：2016-12-07
Applicant: Sony Corporation
Inventor： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Kazutaka Yamane
IPC: H01L43/02 , H01L27/22 , H01L27/24 , H01L43/08 , H01L43/10 , G11B5/39 , G01R33/09 , G11C11/16 , H01L29/82
CPC classification number: H01L43/02 , G01R33/093 , G11B5/3909 , G11C11/16 , G11C11/161 , H01L27/222 , H01L27/224 , H01L27/226 , H01L27/228 , H01L27/2481 , H01L29/82 , H01L43/08 , H01L43/10
Abstract: A memory element including a layered structure including a memory layer having magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information stored therein, a magnetization-fixed layer having magnetization perpendicular to the film face, which becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.
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公开(公告)号：US09818932B2
公开(公告)日：2017-11-14
申请号：US15031092
申请日：2014-10-20
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Hiroyuki Uchida
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1675 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08 , H01L43/10
Abstract: A storage element and storage devices containing the same, having a layered structure and being configured for storing information are disclosed. In one example, the storage element comprises a storage portion with a storage magnetization that is perpendicular to a film surface of the layered structure, wherein a direction of the storage magnetization is configured to change according to the information. The storage element also includes a fixed magnetization portion with reference magnetization serving as a reference to the storage magnetization, and an intermediate portion between the storage portion and the fixed magnetization portion that is made of a non-magnetic material. The fixed magnetization portion includes a laminated ferrimagnetic structure that comprises a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The fixed magnetization portion includes a first magnetic material that is an alloy or a laminated structure including Pt, Co, and Y.
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公开(公告)号：US09748470B2
公开(公告)日：2017-08-29
申请号：US15233468
申请日：2016-08-10
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
IPC: G11C11/14 , H01L43/02 , H01L43/08 , H01L27/22 , G11B5/39 , H01F10/32 , G11C11/155 , G11C11/16 , G11C11/15
CPC classification number: G11C11/161 , G11B5/3906 , G11B5/3909 , G11C11/15 , G11C11/155 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/02 , H01L43/08
Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.
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公开(公告)号：US09728716B2
公开(公告)日：2017-08-08
申请号：US15007382
申请日：2016-01-27
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
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公开(公告)号：US09484528B2
公开(公告)日：2016-11-01
申请号：US15095553
申请日：2016-04-11
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
CPC classification number: H01L43/10 , G11C11/161 , H01L27/222 , H01L27/228 , H01L29/82 , H01L43/08
Abstract: A memory element includes a layered structure: a memory layer having a magnetization direction changed depending on information, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, including a first ferromagnetic layer having a magnetization direction that is inclined from a direction perpendicular to a film face, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer and bonded to the first ferromagnetic layer via the bonding layer, having a magnetization direction that is inclined from the direction perpendicular to the film face, a magnetization-fixed layer having a fixed magnetization direction, an intermediate layer that is provided between the memory layer and the magnetization-fixed layer, and is contacted with the first ferromagnetic layer, and a cap layer that is contacted with the second ferromagnetic layer.
Abstract translation: 存储元件包括分层结构：具有根据信息改变的磁化方向的存储层，通过在分层结构的层叠方向施加电流来改变磁化方向，以将信息记录在存储层中，该信息包括第一铁磁 层，其具有从垂直于膜面的方向倾斜的磁化方向，层压在所述第一铁磁层上的接合层和层压在所述接合层上并通过所述接合层接合到所述第一铁磁性层的第二铁磁层， 从垂直于膜面的方向倾斜的磁化方向，具有固定的磁化方向的磁化固定层，设置在存储层和磁化固定层之间的中间层，并与第一铁磁体 层和与第二铁磁体接触的盖层 c层。
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