公开(公告)号：US20180261643A1

公开(公告)日：2018-09-13

申请号：US15981577

申请日：2018-05-16

Applicant: Sony Corporation

Inventor： Toshifumi Wakano

IPC: H01L27/146 ,  H04N5/3745

Abstract: There is provided a solid-state image sensor including a semiconductor substrate in which a plurality of pixels are arranged, and a wiring layer stacked on the semiconductor substrate and formed in such a manner that a plurality of conductor layers having a plurality of wirings are buried in an insulation film. In the wiring layer, wirings connected to the pixels are formed of two conductor layers.

公开(公告)号：US10075659B2

公开(公告)日：2018-09-11

申请号：US15119499

申请日：2015-02-20

Applicant: SONY CORPORATION

Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Otake

IPC: H04N5/357 ,  H04N5/374 ,  H04N5/3745 ,  H01L27/146 ,  H04N5/378

CPC classification number: H04N5/357 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14641 ,  H04N5/3745 ,  H04N5/37457 ,  H04N5/378

Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.

公开(公告)号：US09865643B2

公开(公告)日：2018-01-09

申请号：US15630032

申请日：2017-06-22

Applicant: Sony Corporation

Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Tanaka ,  Yusuke Otake

IPC: H01L31/00 ,  H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14641 ,  H04N5/37457

Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency.In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.

公开(公告)号：US09865633B2

公开(公告)日：2018-01-09

申请号：US14619587

申请日：2015-02-11

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Toshifumi Wakano ,  Ken Koseki

IPC: H04N5/378 ,  H01L27/146 ,  H04N5/365 ,  H04N5/357 ,  H04N5/3745 ,  H04N5/374

CPC classification number: H01L27/14612 ,  H01L27/14643 ,  H04N5/357 ,  H04N5/3658 ,  H04N5/3741 ,  H04N5/3742 ,  H04N5/3745 ,  H04N5/37455 ,  H04N5/37457 ,  H04N5/378

Abstract: A solid-state imaging device in which the potential of a signal line, which is obtained before a pixel has an operating period, is fixed to an intermediate potential between a first power-supply potential and a second power-supply potential.

公开(公告)号：US09679932B2

公开(公告)日：2017-06-13

申请号：US14993851

申请日：2016-01-12

Applicant: Sony Corporation

Inventor： Nanako Kato ,  Toshifumi Wakano

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.

公开(公告)号：US20170110503A1

公开(公告)日：2017-04-20

申请号：US15395538

申请日：2016-12-30

Applicant: Sony Corporation

Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Tanaka ,  Yusuke Otake

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14641 ,  H04N5/37457

Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency.In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.

公开(公告)号：US20160065875A1

公开(公告)日：2016-03-03

申请号：US14934826

申请日：2015-11-06

Applicant: Sony Corporation

Inventor： Toshifumi Wakano ,  Fumihiko Koga

IPC: H04N5/378

CPC classification number: H01L27/14612 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14656 ,  H01L27/14812 ,  H01L27/14887 ,  H04N5/357 ,  H04N5/374 ,  H04N5/378

Abstract: Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.

公开(公告)号：US09029925B2

公开(公告)日：2015-05-12

申请号：US14087295

申请日：2013-11-22

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Toshifumi Wakano ,  Ken Koseki

IPC: H01L27/146 ,  H04N5/357 ,  H04N5/365 ,  H04N5/378

CPC classification number: H01L27/14612 ,  H01L27/14643 ,  H04N5/357 ,  H04N5/3658 ,  H04N5/3741 ,  H04N5/3742 ,  H04N5/3745 ,  H04N5/37455 ,  H04N5/37457 ,  H04N5/378

Abstract: A solid-state imaging device in which the potential of a signal line, which is obtained before a pixel has an operating period, is fixed to an intermediate potential between a first power-supply potential and a second power-supply potential.

Abstract translation: 一种固态成像装置，其中在像素具有操作周期之前获得的信号线的电位固定在第一电源电位和第二电源电位之间的中间电位。

公开(公告)号：US20150009384A1

公开(公告)日：2015-01-08

申请号：US14495450

申请日：2014-09-24

Applicant: Sony Corporation

Inventor： Toshifumi Wakano ,  Fumihiko Koga

IPC: H04N5/374

CPC classification number: H01L27/14612 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14656 ,  H01L27/14812 ,  H01L27/14887 ,  H04N5/357 ,  H04N5/374 ,  H04N5/378

Abstract: Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.

公开(公告)号：US08885083B2

公开(公告)日：2014-11-11

申请号：US14148372

申请日：2014-01-06

Applicant: Sony Corporation

Inventor： Toshifumi Wakano ,  Fumihiko Koga

IPC: H04N3/14 ,  H01L27/146 ,  H04N5/374

CPC classification number: H01L27/14612 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14656 ,  H01L27/14812 ,  H01L27/14887 ,  H04N5/357 ,  H04N5/374 ,  H04N5/378

Abstract: Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.

Abstract translation: 本发明提供一种固态成像装置，其特征在于，包括：像素分配单元以阵列形状配置的像素部分，并且由多个光电转换部分共用除了转移晶体管的另一个像素晶体管组; 传送布线，其连接到像素共享单元的传输晶体管的传输栅电极并且被设置为沿着从顶平面看的在水平方向上延伸并且在垂直方向上平行; 以及平行布线，其被设置为与像素共享单元中的必要的传输布线相邻并且被设置为与顶面平行地与传输布线平行，其中用于抑制电位变化的电压 的传输栅电极被提供给并行布线。