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    STACKED IMAGE SENSOR WITH INTERCONNECTS MADE OF DOPED SEMICONDUCTOR MATERIAL
    62.
    发明申请
    STACKED IMAGE SENSOR WITH INTERCONNECTS MADE OF DOPED SEMICONDUCTOR MATERIAL 审中-公开

    公开(公告)号：US20180158860A1

    公开(公告)日：2018-06-07

    申请号：US15366958

    申请日：2016-12-01

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy

    IPC: H01L27/146 ,  H01L23/532 ,  H01L29/49

    CPC classification number: H01L27/14636 ,  H01L23/53271 ,  H01L27/14614 ,  H01L27/14634 ,  H01L27/14689

    Abstract: An image sensor includes a first semiconductor substrate supporting a photodiode and a source region of a transfer transistor. A first interconnect level on the first semiconductor substrate includes an interconnection dielectric layer on the first semiconductor substrate and interconnect line layers over the interconnection dielectric layer. A second semiconductor substrate that supports readout transistors is mounted over the first semiconductor substrate and first interconnect level. The first interconnect level further includes a first doped semiconductor material electrical connection in physical and electrical contact with the source region in the first semiconductor substrate that passes through the interconnection dielectric layer and the interconnect line layers to electrically connect to at least one transistor of the readout transistors.

    Contact trench between stacked semiconductor substrates
    63.
    发明授权
    Contact trench between stacked semiconductor substrates 有权

    公开(公告)号：US09941200B1

    公开(公告)日：2018-04-10

    申请号：US15275619

    申请日：2016-09-26

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy

    IPC: H01L23/52 ,  H01L25/065 ,  H01L23/522

    CPC classification number: H01L23/5226 ,  H01L25/0657

    Abstract: A first semiconductor substrate layer supports a first transistor including a first source-drain formed by a doped region of the substrate layer. A second semiconductor substrate layer supports a second transistor including a second source-drain formed by a doped region of the substrate layer. The second semiconductor substrate layer is stacked over the first semiconductor substrate layer and separated therefrom by an insulating layer. A metal wiring extends from an electrical contact with the doped region for the first source-drain, through the insulating layer and passing through an electrical isolation structure in the second semiconductor substrate layer to make an electrical contact with the doped region for the second source-drain. The electrical isolation structure is formed by one of a trench isolation or the doped region of the second source-drain itself. The isolation structure has a thickness equal to a thickness of the second semiconductor substrate layer.

    IMAGE SENSOR
    64.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20170221946A1

    公开(公告)日：2017-08-03

    申请号：US15488691

    申请日：2017-04-17

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy ,  Philippe Are

    IPC: H01L27/146 ,  H01L27/148

    CPC classification number: H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14812

    Abstract: An image sensor includes a control circuit and pixels. Each pixel includes: a photosensitive area, a substantially rectangular storage area adjacent to the photosensitive area, and a read area. First and second insulated vertical electrodes electrically connected to each other are positioned opposite each other and delimit the storage area. The first electrode extends between the storage area and the photosensitive area. The second electrode includes a bent extension opposite a first end of the first electrode, with the storage area emerging onto the photosensitive area on the side of the first end. The control circuit operates to apply a first voltage to the first and second electrodes to perform a charge transfer, and a second voltage to block charge transfer.

    IMAGE SENSOR
    65.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20170125474A1

    公开(公告)日：2017-05-04

    申请号：US15136569

    申请日：2016-04-22

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy ,  Philippe Are

    IPC: H01L27/146

    CPC classification number: H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14812

    Abstract: An image sensor including a control circuit and a plurality of pixels, each pixel including: a photosensitive area, a substantially rectangular storage area adjacent to the photosensitive area, and a read area; first and second insulated vertical electrodes electrically connected to each other, opposite each other, and delimiting the storage area, the first electrode extending between the storage area and the photosensitive area, the second electrode including a bent extension opposite a first end of the first electrode, the storage area emerging onto the photosensitive area on the side of the first end, the control circuit being capable of applying a first voltage to the first and second electrodes to perform a charge transfer, and a second voltage to block said transfer.

    PHOTODIODE INSULATION STRUCTURE
    67.
    发明申请
    PHOTODIODE INSULATION STRUCTURE 有权
    光电绝缘结构

    公开(公告)号：US20150279878A1

    公开(公告)日：2015-10-01

    申请号：US14644795

    申请日：2015-03-11

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Nayera Ahmed ,  Francois Roy

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14698

    Abstract: A structure of insulation between photodiodes formed in a doped semiconductor layer of a first conductivity type extending on a doped semiconductor substrate of the second conductivity type, the insulating structure including a trench crossing the semiconductor layer, the trench walls being coated with an insulating layer, the trench being filled with a conductive material and being surrounded with a P-doped area, more heavily doped than the semiconductor layer.

    Abstract translation: 在第二导电类型的掺杂半导体衬底上延伸的第一导电类型的掺杂半导体层中形成的光电二极管之间的绝缘结构，所述绝缘结构包括与半导体层交叉的沟槽，所述沟壁涂覆有绝缘层， 该沟槽被一个导电材料填充并且被比该半导体层更重掺杂的P掺杂区包围。

    PHOTOSENSITIVE CELL OF AN IMAGE SENSOR
    69.
    发明申请
    PHOTOSENSITIVE CELL OF AN IMAGE SENSOR 审中-公开
    图像传感器的感光细胞

    公开(公告)号：US20150021668A1

    公开(公告)日：2015-01-22

    申请号：US14335565

    申请日：2014-07-18

    Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy ,  Julien Michelot ,  Pascale Mazoyer

    IPC: H01L27/146 ,  H01L27/148

    CPC classification number: H01L27/14616 ,  H01L27/14689 ,  H01L27/14806

    Abstract: An image sensor cell formed inside and on top of a substrate of a first conductivity type includes: a storage region of the second conductivity type; a read region of the second conductivity type; a transfer region located between the storage region and the read region; and a transfer gate topping the transfer region and which does not or does not totally top the storage region. The transfer region comprises a first area of the first conductivity type in the vicinity of the storage region, and a second area of the second conductivity type extending between the first area and the read region.

    Abstract translation: 在第一导电类型的衬底内部和之上形成的图像传感器单元包括：第二导电类型的存储区域; 第二导电类型的读取区域; 位于所述存储区域和所述读取区域之间的传送区域; 以及转移栅极顶部转移区域，并且不会或不完全顶部存储区域。 传送区域包括在存储区域附近的第一导电类型的第一区域和在第一区域和读取区域之间延伸的第二导电类型的第二区域。

    DUAL CONVERSION GAIN IMAGE SENSOR CELL
    70.
    发明申请
    DUAL CONVERSION GAIN IMAGE SENSOR CELL 有权
    双转换增益图像传感器单元

    公开(公告)号：US20150021459A1

    公开(公告)日：2015-01-22

    申请号：US14335095

    申请日：2014-07-18

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy

    IPC: H01L31/103 ,  H01L27/146 ,  H04N5/378

    CPC classification number: H01L31/103 ,  H01L27/14612 ,  H01L27/14643 ,  H04N5/378

    Abstract: An image sensor cell formed inside and on top of a substrate of a first conductivity type, including: a read region of the second conductivity type; and, adjacent to the read region, a storage region of the first conductivity type topped with a first insulated gate electrode. The first electrode is arranged to receive, in a first operating mode, a first voltage causing the inversion of the conductivity type of the storage region, so that the storage region behaves as an extension of the read region, and, in a second operating mode, a second voltage causing no inversion of the storage region.

    Abstract translation: 在第一导电类型的衬底的内部和顶部形成的图像传感器单元，包括：第二导电类型的读取区域; 并且与读取区域相邻的第一导电类型的存储区域顶上第一绝缘栅电极。 第一电极被布置成在第一操作模式下接收导致存储区域的导电类型的反转的第一电压，使得存储区域表现为读取区域的延伸，并且在第二操作模式 ，不会导致存储区域的反转的第二电压。

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