公开(公告)号：US20180102377A1

公开(公告)日：2018-04-12

申请号：US15486434

申请日：2017-04-13

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Abderrezak Marzaki

IPC: H01L27/11524 ,  H01L29/06 ,  H01L27/06

CPC classification number: H01L27/11524 ,  H01L21/823481 ,  H01L27/0629 ,  H01L27/11531 ,  H01L29/0649 ,  H01L29/66181 ,  H01L29/945

Abstract: A well of a first conductivity type is insulated from a substrate of the same first conductivity type by a structure of a triple well type. The structure includes a trench having an electrically conductive central part enclosed in an insulating sheath. The trench supports a first electrode of a decoupling capacitor, with a second electrode provided by the well.

公开(公告)号：US09472413B2

公开(公告)日：2016-10-18

申请号：US14451161

申请日：2014-08-04

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Yoann Goasduff ,  Abderrezak Marzaki

IPC: H01L21/302 ,  H01L21/76 ,  H01L21/308 ,  H01L21/266 ,  H01L21/033

CPC classification number: H01L21/3086 ,  H01L21/0337 ,  H01L21/266 ,  H01L21/3081 ,  H01L21/3085

Abstract: At least one projecting block is formed in an element. The projecting block is then covered with a first cover layer so as to form a concave ridge self-aligned with the projecting block and having its concavity face towards the projecting block. A first trench is then formed in the ridge in a manner that is self-aligned with both the ridge and the projecting block. The first trench extends to a depth which reaches the projecting block. The projecting block is etched using the ridge and first trench as an etching mask to form a second trench in the projecting block that is self-aligned with the first trench. A pattern is thus produced by the second trench and unetched parts of the projecting block which delimit the second trench.

Abstract translation: 在元件中形成至少一个突出块。 突出的块然后被第一覆盖层覆盖，以形成与突出块自对准的凹脊，并且其凹面朝向突出块。 然后以与脊和突出块两者自对准的方式在脊中形成第一沟槽。 第一沟槽延伸到到达突出块的深度。 使用脊和第一沟槽蚀刻突出块作为蚀刻掩模，以在与第一沟槽自对准的突出块中形成第二沟槽。 因此，通过限定第二沟槽的突出块的第二沟槽和未蚀刻部分产生图案。

公开(公告)号：US20140138814A1

公开(公告)日：2014-05-22

申请号：US14049910

申请日：2013-10-09

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： Abderrezak Marzaki ,  Yoann Goasduff ,  Virginie Bidal ,  Pascal Fornara

IPC: H01L23/482 ,  H01L21/48

CPC classification number: G01V7/04 ,  B81B3/001 ,  B81B2201/018 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0361 ,  B81B2203/04 ,  B81C1/00111 ,  H01H9/02 ,  H01H37/04 ,  H01H37/32 ,  H01H37/42 ,  H01H61/013 ,  H01L21/32139 ,  H01L28/82 ,  H01L28/88 ,  H01L29/4238

Abstract: A method for producing an integrated circuit pointed element is disclosed. An element has a projection with a concave part directing its concavity towards the element. The element includes a first etchable material. A zone is formed around the concave part of the element. The zone includes a second material that is less rapidly etchable than the first material for a particular etchant. The first material and the second material are etched with the particular etchant to form an open crater in the concave part and thus to form a pointed region of the element.

Abstract translation: 公开了一种用于制造集成电路尖锐元件的方法。 元件具有突出部，其凹部朝向元件引导其凹面。 元件包括第一可蚀刻材料。 围绕元件的凹部形成区域。 该区域包括与用于特定蚀刻剂的第一材料不太可蚀刻的第二材料。 用特定的蚀刻剂蚀刻第一材料和第二材料，以在凹部中形成开放的凹坑，从而形成元件的尖锐区域。